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DOE OSTI2020

Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures

We report Au-free, Ti/Al/Ta ohmic contact on the AlGaN/AlN/GaN heterostructure using low annealing temperature is studied in this paper. With SiCl 4 plasma treatment at the recess-etched contact region, a low contact resistance of 0.52 Ω mm and a low sheet resistance of 373 Ω/sq are achieved after annealing at 550 °C for 30 s. The low annealing temperature also leads to better surface morphology. Furthermore, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) are fabricated with the 550 °C, 30 s annealed Ti/Al/Ta ohmic contacts, and a maximum transconductance of 123 mS/mm and a maximum drain current of 510 mA/mm are obtained for a gate length of 4 μm. Based on Silvaco's Atlas device simulation framework, a scaled-down device with a short gate length of 1 μm would produce a maximum drain current density of 815 mA/mm. It indicates that the direct current performance of the HEMTs with the ohmic metal proposed in this work is considerably better than that with Au-based ohmic contact.

42 ENGINEERING↗

DOE OSTI2024

First demonstration of 30 eVee ionization energy resolution with RICOCHET germanium cryogenic bolometers

The future RICOCHET experiment aims to search for new physics in the electroweak sector by measuring the Coherent Elastic Neutrino-Nucleus Scattering process from reactor antineutrinos with high precision down to the sub-100 eV nuclear recoil energy range. While the RICOCHET collaboration is currently building the experimental setup at the reactor site, it is also finalizing the cryogenic detector arrays that will be integrated into the cryostat at the Institut Laue Langevin in early 2024. In this paper, we report on recent progress from the Ge cryogenic detector technology, called the CryoCube. More specifically, we present the first demonstration of a 30 eVee (electron equivalent) baseline ionization resolution (RMS) achieved with an early design of the detector assembly and its dedicated High Electron Mobility Transistor (HEMT) based front-end electronics with a total input capacitance of about 40 pF. This represents an order of magnitude improvement over the best ionization resolutions obtained on similar phonon-and-ionization germanium cryogenic detectors from the EDELWEISS and SuperCDMS dark matter experiments, and a factor of three improvement compared to the first fully-cryogenic HEMT-based preamplifier coupled to a CDMS-II germanium detector with a total input capacitance of 250 pF. Additionally, we discuss the implications of these results in the context of the future RICOCHET experiment and its expected background mitigation performance.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2020

( Invited ) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests

Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.

42 ENGINEERING↗

DOE OSTI2022

Radiation-Hardened GaN-Based Wireless Communications Architectures for Terrestrial Nuclear Reactor Sensing and Instrumentation

Wireless technologies have become increasingly common in applications, ranging from close proximity inductive communication links in medical devices to short-range Bluetooth and WiFi communications and longer-range cellular communications. Nonetheless, these technologies are unsuitable for use in or around nuclear reactors due to the extreme radiation and temperatures inherent in these environments and their associated significant degradative effects on electronics hardware. However, recent work in wide bandgap– based electronics has shown promise for gallium nitride (GaN) as an emerging technology for the realization of practical wireless communications systems for use in harsh environments. This report presents initial progress on the development of wireless communications architectures designed specifically for nuclear reactor application, based on inherently radiation-hardened (rad-hard) GaN technology. Prior work on rad-hard analog communications topologies is reviewed, and several digital modulation and encoding schemes that utilize GaN-based electronics devices are newly proposed for application in reactor environments. Continuous-time and discrete-time system simulations were performed, and results are presented for the preliminary transmitter and receiver designs, respectively. In addition, an overview of a software-defined radio testbed, designed for communications protocol development, is provided. Future work will focus on implementing candidate radiation-resistant wireless architectures using a research AlGaN/GaN high electron mobility transistor (HEMT) integrated circuit process, which is available at the Ohio State University, and irradiation studies will be carried out to assess the true potential of this technology for reactor application.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

NASA NTRS1986

Analysis of optically controlled microwave/millimeter wave device structures

The light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor bandgap for GaAs MESFET, InP MESFET, Al0.3Ga0.7As/GaAs high electron mobility transistor (HEMT) and GaAs permeable base transistor (PBT) were analytically obtained. The GaAs PBT and GaAs MESFET have much higher sensitivity than InP MESFET. The Al0.3Ga0.7As/GaAs HEMT is observed to have the highest sensitivity. Variation in device parasitics due to optical illumination and its effect on the cutoff frequencies f sub T and f sub max are also investigated.

Simons, R. N.↗

NASA NTRS1986

Analysis of optically controlled microwave/millimeter-wave device structures

Simons, Rainee N.↗

NASA NTRS1987

Low-noise cryogenic transmission line

New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.

Norris, D.↗

NASA NTRS1988

X-band system performance of the very large array

The Very Large Array (VLA) is being equipped to receive telemetry from Voyager 2 during the Neptune encounter in 1989. Cryogenically cooled amplifiers are being installed on each of the 27 antennas. These amplifiers are currently a mix of field effect transistors (FETs) and high electron mobility transistors (HEMTs) and exhibit zenith system temperatures that range from 30 to 52 K. The system temperatures and aperture efficiencies determined during the past year are summarized. The nominal values of the noise diode calibration are compared with derived values made under the assumption of a uniform atmosphere over the array. Gain values are determined from observations of unresolved radio sources whose flux densities are well known. The tests suggest that the completed VLA will have a ratio of gain to system temperature that is approximately 4.4 dB above that of a single 64 m antenna of the Deep Space Network.

Ulvestad, J. S.↗

NASA NTRS1988

Ultra-low-noise cryogenic high-electron-mobility transistors

Quarter-micrometer gate-length high-electron-mobility transistors (HEMTs) for cryogenic low-noise application with very low light sensitivity have been developed. At room temperature, these exhibit a noise figure of 0.4 dB with associated gain of 15 dB at 8 GHz. At a temperature of 12.5 K the minimum noise temperature of 5.3 +/- 1.5 K has been measured at 8.5 GHz, which is the best noise performance observed to date for any microwave transistors. The results clearly demonstrate the potential for low-temperature low-noise applications.

Duh, K. H. George↗

NASA NTRS1989

Optically-Controlled Microwave Devices And Circuits

NASA Technical Memorandum discusses physical basis and dc and microwave characteristics of optically-controlled microwave devices described in literature. Emphasis on responses of GaAs/GaAlAs high-electron-mobility transistors (HEMT's) and GaAs metal/semiconductor field-effect transistors (MESFET's) to light. Devices used to detect radio-frequency modulation of optical signals, to control gains of amplifiers, and to provide injection locking of oscillators.

Bhasin, Kul B.↗

NASA NTRS1989

The 32-GHz performance of the DSS-14 70-meter antenna: 1989 configuration

The results of preliminary 32 GHz calibrations of the 70 meter antenna at Goldstone are presented. Measurements were done between March and July 1989 using Virgo A and Venus as the primary efficiency calibrators. The flux densites of theses radio sources at 32 GHz are not known with high accuracy, but were extrapolated from calibrated data at lower frequencies. The measured value of efficiency (0.35) agreed closely with the predicted value (0.32), and the results are very repeatable. Flux densities of secondary sources used in the observations were subsequently derived. These measurements were performed using a beamswitching radiometer that employed an uncooled high-electron mobility transistor (HEMT) low-noise amplifier. This system was installed primarily to determine the performance of the antenna in its 1989 configuration, but the experience will also aid in successful future calibration of the Deep Space Network (DSN) at this frequency.

Gatti, M. S.↗

NASA NTRS1991

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Pavlidis, Dimitris↗

NASA NTRS1993

Wide-bandwidth high-resolution search for extraterrestrial intelligence

Research accomplished during the third 6-month period is summarized. Research covered the following: dual-horn antenna performance; high electron mobility transistors (HEMT) low-noise amplifiers; downconverters; fast Fourier transform (FFT) array; and backend 'feature recognizer' array.

Horowitz, Paul↗

NASA NTRS1991

DC and small-signal physical models for the AlGaAs/GaAs high electron mobility transistor

Analytical and numerical models are developed for the microwave small-signal performance, such as transconductance, gate-to-source capacitance, current gain cut-off frequency and the optimum cut-off frequency of the AlGaAs/GaAs High Electron Mobility Transistor (HEMT), in both normal and compressed transconductance regions. The validated I-V characteristics and the small-signal performances of four HeMT's are presented.

Sarker, J. C.↗

NASA NTRS1993

Cryogenic, low-noise high electron mobility transistor amplifiers for the Deep Space Network

The rapid advances recently achieved by cryogenically cooled high electron mobility transistor (HEMT) low-noise amplifiers (LNA's) in the 1- to 10-GHz range are making them extremely competitive with maser amplifiers. In order to address future spacecraft navigation, telemetry, radar, and radio science needs, the Deep Space Network is investing both maser and HEMT amplifiers for its Ka-band (32-GHz) downlink capability. This article describes the current state cryogenic HEMT LNA development at Ka-band for the DSN. Noise performance results at S-band (2.3 GHz) and X-band (8.5 GHz) for HEMT's and masers are included for completeness.

Bautista, J. J.↗

NASA NTRS1994

Cryogenic probe station for use in automated microwave and noise figure measurements

A cryogenic measurement system capable of performing on-wafer RF testing of semiconductor devices and circuits has been developed. This 'CryoProbe Station' can wafer-probe devices and circuits at cryogenic temperatures, thus eliminating the need for wire bonds. The system operates under vacuum created by a sorption pump. It uses an open cycle cooling system that can be cooled with either liquid nitrogen or liquid helium. Presently, it can reach temperatures, as low as 80 K and 37 K for each of the coolants, respectively. The temperature can be raised using a heater and it is stabilized to within 0.2 K by use of a temperature controller. The CryoProbe Station features a 1 by 2 inch stage that can hold large circuits and calibration standards simultaneously. The system is used with a Hewlett Packard 8510C Automatic Network Analyzer (ANA) to obtain S-parameter data over the frequency range 0.045-26.5 GHz. S-parameter data on HEMT (high electron mobility transistors) devices has been obtained with this station. With the use of DEEMBED software from NIST, detailed transmission line studies have been performed. Although the CryoProbe Station is designed for frequencies up to 26.5 GHz, useful transmission line data has been obtained for frequencies as high as 40 GHz. The CryoProbe station has also been used with the ATN noise figure measurement system to perform automatic, temperature dependent noise figure measurements.

Taub, Susan R.↗

NASA NTRS2002

Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Wollack, Edward J.↗

NASA NTRS2002

Cryogenically Cooled Field Effect Transistors for Low-Noise Systems

Wollack, Edward J.↗