Results for “high voltage breakdown” — Page 5

NASA NTRS1991

High-voltage 6H-SiC p-n junction diodes

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

Matus, L. G.↗

NASA NTRS2008

A SEP Mission to Jupiter Using the Stretched Lens Array

As space exploration continues to be a primary focus of NASA, solar electric propulsion (SEP) becomes a forerunner in the mode of transportation to reach other planets in our solar system. Several critical issues emerge as potential barriers to this approach such as reducing solar array radiation damage, operating the array at high voltage (>300 V) for extended times for Hall or ion thrusters, and designing an array that will be resistant to micrometeoroid impacts and the differing environmental conditions as the vehicle travels further into space. It is also of great importance to produce an array that is light weight to preserve payload mass fraction and to do this at a cost that is lower than today's arrays. This paper will describe progress on an array that meets all these requirements and will detail its use in a solar electric mission to Jupiter. From 1998-2001, NASA flew the Deep Space 1 mission that validated the use of ion propulsion for extended space missions. This highly successful two-year mission also used a novel SCARLET solar array that concentrated sunlight eight-fold onto small area solar cells. This array performed flawlessly and within 2% of its projected performance over the entire mission. That design has evolved into the Stretched Lens Array (SLA) shown in figure 1. The primary difference between SCARLET and the SLA is that no additional glass cover is used over the silicone lens. This has led to significant mass, cost and complexity reductions. The module shown in figure 1 is the latest version of the design. This design leads to a specific power exceeding 300 W/kg at voltages exceeding 300 V. In addition, this module has been tested to voltages over 1000 V while under hypervelocity particle impact in a plasma environment with no arcing. Furthermore array segments are under test for corona breakdown that can become a critical issue for long term, high voltage missions.

Brandhorst, Henry W.↗

NASA NTRS2012

Gas Composition Sensing Using Carbon Nanotube Arrays

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.

Li, Jing↗

NASA NTRS1998

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗

NASA NTRS1998

Obtaining Solutions to Radiation-And Plasma Induced FAilure Modes From Physics

A number of performance-limiting spacecraft problems will be qualitatively discussed: Spacecraft Charging, Deep Dielectric Charging, Solar Cell Arcing, Antenna Sparking, High Voltage Power Shorts, Radiation-induced Defects in Semiconductors, and Degradation of Electronic Devices.

Radiation Plasma Arcing high voltage static charge↗

NASA NTRS1972

Dielectric breakdown in a dilute plasma: A 20 kilovolt limited study

A dielectric breakdown study was made of several materials proposed for high-voltage (16-kV) use on solar-cell arrays at space conditions. The tests were made in an argon plasma whose electron density and temperature approximately simulated conditions at an altitude of 300 km. The maximum voltage used was 20 kV. The results indicate that the breakdown voltages of the materials tested are larger than those quoted in the literature for dielectric between two metal electrodes.

Mckinzie, D. J., Jr.↗

NASA NTRS1977

Measurement of insulation integrity of IUE camera tube facsimiles by partial discharges method and diffusion of gases through various silicone rubbers

Several dummy tubes imitating the IUE Camera System design were encapsulated with Solithane 2, Conathane EN-11, Green and Black Hysols and SMRD 432. Various flaws were purposefully placed in some of these. Partial discharge testing in vacuum under direct voltage conditions was carried once a week for 12 weeks, 15 kv dc being applied during normal working hours for 40 hours duration per week. None of the units showed much damage during this time judging by the P.D. energy histograms. A more complete mathematical presentation is given on diffusion and permeation than previously. Measurements of diffusion constants for various silicone rubbers are carried out by the Time-Lag method and compared to other determinations in the literature. Calculations of the time required for diffusion through a thick wall are demonstrated in the long time approximation and for dimensions pertaining to void and wall sizes of a delamination problem in the LANDSAT-C vidicon tubes. An actual delaminated LANDSAT-C tube and some facsimiles are immersed in vacuum for long periods and tested for catastrophic breakdown due to diffusion of gas, by application of high voltage.

Bever, R. S.↗

NASA NTRS1996

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Neudeck, Philip G.↗

NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗

NASA NTRS1966

Electrical discharges at altitudes between 70,000 and 250,000 feet

Measurements of electrical discharges caused by corona, glow discharges, and voltage breakdown under conditions encountered in aerospace vehicles operating within high altitudes

Dunbar, W. G.↗

NASA NTRS1981

Kilovolt vacuum feed through is less noisy

Electrical feedthrough connects both low-voltage and high-voltage signals between cryogenic environment and "outside world." Developed for cooled germanium gamma-ray detector, feedthrough has especially low capacitance and low sensitivity to microphonic noise. Its high-voltage lead is free of corona discharge and electrical breakdown to at least 5 kV.

Howell, L. D.↗

NASA NTRS2018

Lightweight, Durable, and Multifunctional Electrical Insulation Material Systems for High Voltage Applications

Newly developed multilayer structures of well-known polymer insulation materials significantly improved dielectric breakdown voltage, VB, or dielectric strength, K, if well-bonded, when compared to those of single material insulations or the commercial SOA systems, such as Teflon-Kapton-Teflon (TKT), at the same overall thickness. To date, the greatest improvement of the new structures from a few candidate materials, including various types of Kapton PIs and PFA or PET as bond layer (BL), was about 61% higher than that of the Kapton PI alone films, 40.1 vs. 24.9 kV, which was translated to 86.3% decrease in insulation thickness, thus significant volume and weight reduction of the final system. However, it was of interest to note that most improvements of the multilayer structures occurred at thicker overall thicknesses, above ~ 0.15 mm. Extensive analyses also showed that K of the multilayer structures increased with (i) decreasing individual layer thickness regardless of material type, (ii) increasing total accumulated thickness of PI or overall PI/BL ratio, and (iii) increasing number of interface or total number of layers, but only above the aforementioned overall thickness limit. Increases in VB of the multilayer structures were directly correlated with damage evolution and failure mode. With further material-design-process optimizations of the multilayer structures, it was expected to achieve other multifunctionalities, such as high partial discharge (PD) resistance, improved durability, EMI shielding, and high thermal dissipation in addition to high dielectric strength. These new structures can be used in various high voltage and high temperature applications, such as future hybrid or all electric aircraft wiring and power transmission as well as many other non-aerospace high power cables, electronic parts and components, printed circuit board, and so forth. The multilayer insulation system can be easily processed and manufactured with various conductor types via calendaring, compression-molding, stamping, laminating, vacuum-bagging and autoclaving, or 3D printing, even for complex 3-D components. Based on their unique structural configurations and potential capabilities, the new insulation system was identified as micro-multilayer multifunctional electrical insulation (MMEI). Patent application of the MMEI concept and current design configurations was filed for a 1-year provisional application (OAI-58834, Serial No.: 62/659,234), pending conversion to a U.S. utility application. This paper presents details of the MMEI structures, their dielectric performance analyses, potential mechanisms, and commercial scaleup feasibility assessment.

Electric aircrafts↗

NASA NTRS2018

Lightweight, Durable, and Multifunctional Electrical Insulation Material Systems for High Voltage Applications

Newly developed multilayer structures of well-known polymer insulation materials significantly improved dielectric breakdown voltage, VB, or dielectric strength, K, if well-bonded, when compared to those of single material insulations or the commercial SOA systems, such as Teflon-Kapton-Teflon (TKT), at the same overall thickness. To date, the greatest improvement of the new structures from a few candidate materials, including various types of Kapton PIs and PFA or PET as bond layer (BL), was about 61% higher than that of the Kapton PI alone films, 40.1 vs. 24.9 kV, which was translated to 86.3% decrease in insulation thickness, thus significant volume and weight reduction of the final system. However, it was of interest to note that most improvements of the multilayer structures occurred at thicker overall thicknesses, above ~ 0.15 mm. Extensive analyses also showed that K of the multilayer structures increased with (i) decreasing individual layer thickness regardless of material type, (ii) increasing total accumulated thickness of PI or overall PI/BL ratio, and (iii) increasing number of interface or total number of layers, but only above the aforementioned overall thickness limit. Increases in VB of the multilayer structures were directly correlated with damage evolution and failure mode. With further material-design-process optimizations of the multilayer structures, it was expected to achieve other multifunctionalities, such as high partial discharge (PD) resistance, improved durability, EMI shielding, and high thermal dissipation in addition to high dielectric strength. These new structures can be used in various high voltage and high temperature applications, such as future hybrid or all electric aircraft wiring and power transmission as well as many other non-aerospace high power cables, electronic parts and components, printed circuit board, and so forth. The multilayer insulation system can be easily processed and manufactured with various conductor types via calendaring, compression-molding, stamping, laminating, vacuum-bagging and autoclaving, or 3D printing, even for complex 3-D components. Based on their unique structural configurations and potential capabilities, the new insulation system was identified as micro-multilayer multifunctional electrical insulation (MMEI). Patent application of the MMEI concept and current design configurations was filed for a 1-year provisional application (OAI-58834, Serial No.: 62/659,234), pending conversion to a U.S. utility application. This paper presents details of the MMEI structures, their dielectric performance analyses, potential mechanisms, and commercial scaleup feasibility assessment.

Multifunctional↗

NASA NTRS2000

Transverse Magnetic Field Propellant Isolator

An alternative high voltage isolator for electric propulsion and ground-based ion source applications has been designed and tested. This design employs a transverse magnetic field that increases the breakdown voltage. The design can greatly enhance the operating range of laboratory isolators used for high voltage applications.

Foster, John E.↗

NASA NTRS1977

Inert gas thrusters

Inert gases, particularly argon and xenon, are of interest as possible alternatives to the usual electric thruster propellants of mercury and cesium. Hollow cathode data were obtained for a wide range of operating conditions. Some test conditions gave plasma coupling voltages at or below the sputtering threshold, hence should permit long operating lifetimes. All observations of hollow cathode operation were consistent with a single theory of operation, in which a significant amount of the total electron emission is from localized areas within the orifice. This mode of emission is also supported by scanning electron microscope photographs that indicate local temperatures at or near the melting temperature of the tungsten tip. Experimental hollow cathode performance was correlated for two orifice diameters, three inert gas propellants, and a range of flow rates for each propellant. The basic theory for the production of doubly ionized argon and xenon was completed. Experimental measurements of the doubly ionized fraction agree with theory within about plus or minus 20 percent. High voltage isolators were studied for the propellant feed line. The breakdown voltage per segment ranged from 300 to over 500 V with argon.

Kaufman, H. R.↗

NASA NTRS1985

Dielectric material in the space environment

The irradiation encountered in space environments causes high insulation materials to discharge, either through electrical breakdown or surface voltage effect mechanisms. Attention is presently given to polymers which, serving as 'leaky' insulators, avoid this problem by means of conduction mechanisms that are acceptable in space applications. The class of conductive polymers encompasses polyvinylcarbazole, polyacrylonitrile, Kapton, and polythiazil. A testing procedure useful in the qualification of such polymers is outlined.

Frederickson, A. R.↗

NASA NTRS1990

Current collection by a spherical high voltage probe: Electron trapping and collective processes

The author summarizes the results of theoretical studies of the interaction of an uninsulated, spherical, high voltage (10's of KV positive) probe with the ionospheric environment. The focus of this effort was the phenomenon of electron trapping and its implications for breakdown processes (collisional regime) and the current-voltage relationship governing current collection (collisionless regime) in space-based pulsed power systems with high voltage components exposed to space, e.g., the SPEAR I experiment.

Palmadesso, Peter J.↗

NASA NTRS2010

Physical and Electrical Characterization of Aluminum Polymer Capacitors

Conductive polymer aluminum capacitor (PA capacitor) is an evolution of traditional wet electrolyte aluminum capacitors by replacing liquid electrolyte with a solid, highly conductive polymer. On the other hand, the cathode construction in polymer aluminum capacitors with coating of carbon and silver epoxy for terminal connection is more like a combination of the technique that solid tantalum capacitor utilizes. This evolution and combination result in the development of several competing capacitor construction technologies in manufacturing polymer aluminum capacitors. The driving force of this research on characterization of polymer aluminum capacitors is the rapid progress in IC technology. With the microprocessor speeds exceeding a gigahertz and CPU current demands of 80 amps and more, the demand for capacitors with higher peak current and faster repetition rates bring conducting polymer capacitors to the center o( focus. This is because this type of capacitors has been known for its ultra-low ESR and high capacitance. Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were obtained and tested. The construction analysis of the capacitors revealed three different constructions: conventional rolled foil, the multilayer stacking V-shape, and a dual-layer sandwich structure. The capacitor structure and its impact on the electrical characteristics has been revealed and evaluated. A destructive test with massive current over stress to fail the polymer aluminum capacitors reveals that all polymer aluminum capacitors failed in a benign mode without ignition, combustion, or any other catastrophic failures. The extraordinary low ESR (as low as 3 mOMEGA), superior frequency independence reported for polymer aluminum capacitors have been confirmed. For the applications of polymer aluminum capacitors in space programs, a thermal vacuum cycle test was performed. The results, as expected, show no impact on the electrical characteristics of the capacitors. The breakdown voltage of polymer capacitors has been evaluated using a steady step surge test. Initial results show the uniform distribution in the breakdown voltage for polymer aluminum capacitors. Polymer aluminum capacitors with a combination of very high capacitance, extraordinary low ESR, excellent frequency stability, and non-ignite benign failure mode make it a niche fit in space applications for both today and future. Polymer capacitors are apparently also the best substitutes of the currently used MnO2-based tantalum capacitors in the low voltage range. However, some critical aspects are still to be addressed in the next phase of the investigation for PA capacitors. These include the long term reliability test of 125 C dry life and 85 C/85%RH humidity, the failure mechanism and de-rating, the radiation tolerance, and the high temperature performance. All of the above requires the continuous NEPP funding and support.

Liu, David (Donghang)↗