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DOE OSTI2023

Quantifying Optical Loss of High-Voltage Degradation Modes in PV Modules Using Spectral Analysis [Slides]

The direct current bias for photovoltaic (PV) modules interconnected in series-strings may include both high voltage negative ("HV-") and positive ("HV+") polarity with respect to the electrical ground. Multiple degradation modes, resulting in quantifiable optical loss, were found to occur during HV-/HV+ sequential stress, including: corrosion of the external glass surface, encapsulant delamination (at its interfaces with the glass and the PV cell), internal haze formation (resulting from a chemical interaction between the glass and the encapsulant), corrosion and migration of the gridlines, and corrosion of the silicon nitride (SixNy) antireflective coating on the cell. The effects of these separate modes were examined using monolithic (e.g., glass or PV cell) and laminated-coupon (glass/encapsulant/glass or glass/encapsulant/cell/encapsulant/backsheet) specimens. Characterizations during and after unbiased accelerated testing at 85 degrees C/85% relative humidity included: spectrophotometry, optical microscopy, electron microscopy, and ellipsometry. For some module components (i.e., the glass and the SixNy coating), the optical performance was determined through iterative analysis of empirical measurements. Concentrating on just their spectral effect, a novel model was then developed to estimate the transfer of light to the PV cell and the return of light from the PV module with simultaneous degradation mechanisms, which was compared to a mini-module previously subjected to HV-/HV+ stress. The model suggests one-third of the current loss observed for the mini-module can be attributed to the optical degradation of the packaging materials. The dominant degradation modes include encapsulant delamination and corrosion of the SixNy coating. Recommendations are given so that the optical model may be improved relative to accelerated testing and validated relative to field aging.

14 SOLAR ENERGY↗

DOE OSTI2024

Oxygen vacancy migration and impact on high voltage DC polarization in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3

Electrical polarization and defect transport are examined in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3 , an attractive capacitor material for high power electronics. Oxygen vacancies are suggested to be the majority charge carrier at or below 250°C with a grain conduction hopping activation energy of 0.97 eV and 0.92 eV for thermally stimulated depolarization current (TSDC) and impedance spectroscopy measurements, respectively. At higher temperature, thermally generated electronic conduction with an activation energy of 1.6 eV is dominant. Significant oxygen vacancy concentration is indicated (up to ~1%) due to cation vacancy formation (i.e., acceptor defects) from observed Bi (and likely Zn) volatility. Oxygen vacancy diffusivity is estimated to be 10 -12.8 cm 2 /s at 250°C. Low diffusivity and high activation energies are indicative of significant defect interactions. Dipolar oxygen vacancy defects are also indicated, with an activation energy of 0.59 eV from TSDC measurements. In conclusion, the large oxygen vacancy content leads to a short lifetime during high voltage (30 kV/cm), high temperature (250°C) direct current (DC) electrical measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

Wide bandgap optical switch circuit breaker for controlling propagation of current therethrough a wide bandgap optical device

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Voss, Lars F.↗

DOE OSTI2023

High Power Density Cost-Effective MVDC Aircraft Cable

To make the power density of electric aircraft closer to conventional aircraft, an electric power system (EPS) with high power delivery and low system mass is necessary. As an essential component of aircraft EPS, cables are necessary to transmit power from one node to another. Virginia Tech will design high-power density, cost-effective ±5 kV cables for twin-aisle all-electric aircraft. Innovations include conductors with increased current-carrying capacity and a multilayer, multifunctional insulation system made of exceptionally high thermal conductivity materials. Designed for DC voltage, the new insulator will allow fewer partial discharge events and provide improved electromagnetic interference protection.

42 ENGINEERING↗

DOE OSTI2022

Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation

To employ graphene’s rapid conduction in 2D devices, a heterostructure with a broad bandgap dielectric that is free of traps is required. Within this paradigm, h-BN is a good candidate because of its graphene-like structure and ultrawide bandgap. We show how to make such a heterostructure by irradiating alternating layers of a-C and a-BN film with a nanosecond excimer laser, melting and zone-refining constituent layers in the process. With Raman spectroscopy and ToF-SIMS analyses, we demonstrate this localized zone-refining into phase-pure h-BN and rGO films with distinct Raman vibrational modes and SIMS profile flattening after laser irradiation. Furthermore, in comparing laser-irradiated rGO-Si MS and rGO/h-BN/Si MIS diodes, the MIS diodes exhibit an increased turn-on voltage (4.4 V) and low leakage current. The MIS diode I-V characteristics reveal direct tunneling conduction under low bias and Fowler-Nordheim tunneling in the high-voltage regime, turning the MIS diode ON with improved rectification and current flow. This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.

2D materials↗

DOE OSTI2020

Analysis of High Frequency AC Link Isolated Three Port Resonant Converter for UAV Applications

A high frequency AC link isolated three port semi-bridgeless resonant converter is analyzed for unmanned aerial vehicle (UAV) applications in this study. The proposed topology is established by replacing rectifier lover diodes with synchronous switches. A phase shifted pulse width modulation (PS-PWM) technique adjusts bi-directional power flow between ports. Proposed control technique provides high efficiency by reducing switching losses with zero voltage switching (ZVS) and zero current switching (ZCS) in a wide power range regulation. Compared to integrated PWM converters in a bi-directional mode, the proposed topology reduces the number of converter stages and allows centralized control at high operating frequency. Theoretical and experimental results demonstrate the feasibility and effectiveness of the proposed converter at a full power of 500 W in laboratory conditions.

Asa, Erdem↗

DOE OSTI2024

Power Layout Design of a GaN HEMTs-Based High-Power High-Efficiency Three-Level ANPC Inverter for 800 V DC Bus System

Multiple commutation paths exist for switching devices in a three-level active neutral point clamped (3L-ANPC) inverter operation based on the selected switching state and current direction. In addition, the capacitive coupling path of the nonswitching device is a key design aspect for enabling high voltage and high current operation of gallium nitride (GaN) switches in 3L-ANPC topology. A comprehensive study of the switching transient events of inner, outer, and clamping devices of 3L-ANPC is presented in this article. The commutation mechanisms for worst-case transient voltage overshoots (TVOs) are identified. A simplified equivalent circuit model is presented to determine the design criteria for the power layout structure's parasitic inductances. A power layout strategy satisfying the design criteria is then proposed using an insulated metal substrate power printed circuit board (PCB) to enable efficient high-power operation. The proposed design minimizes the commutation and capacitive coupling path inductances to 6 nH and 11.5 nH, respectively. This enables the fast switching operation of GaN HEMTs at 800 V dc, 36 A with a low TVO of 31% verified through experimental three-level double pulse test results. Experimental evaluation of a three-phase 3L-ANPC hardware prototype based on the proposed power layout shows 99% efficiency at 800 V, 9.5 kVA and 50 kHz switching frequency. The proposed design achieves a low case-to-ambient thermal resistance of 2.3 °C/W.

42 ENGINEERING↗

DOE OSTI2020

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

In this work, a high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μ m-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. Furthermore, the turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

42 ENGINEERING↗

DOE OSTI2022

Wide bandgap optical switch circuit breaker

Voss, Lars F.↗

DOE OSTI2022

Record >10 MV/cm mesa breakdown fields in Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors on native AlN substrates

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3 μm separation possess a record-high breakdown field strength of ~11.5 MV/cm for an undoped Al 0.6 Ga 0.4 N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9 μm are 850 and 1500 V, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Exploring solvation structure and transport behavior for rational design of advanced electrolytes for next generation of lithium batteries

The efficacy of electrolytes significantly affects battery performance, leading to the development of several strategies to enhance them. Despite this, the understanding of solvation structure remains inadequate. It is imperative to understand the structure–property–performance relationship of electrolytes using diverse techniques. Here, this review explores the recent advancements in electrolyte design strategies for high capacity, high-voltage, wide-temperature, fast-charging, and safe applications. To begin, the current state-of-the-art electrolyte design directions are comprehensively reviewed. Subsequently, advanced techniques and computational methods used to understand the solvation structure are discussed. Additionally, the importance of high-throughput screening and advanced computation of electrolytes with the help of machine learning is emphasized. Finally, future horizons for studying electrolytes are proposed, aimed at improving battery performance and promoting their application in various fields by enhancing the microscopic understanding of electrolytes.

25 ENERGY STORAGE↗

DOE OSTI2020

EMP-Resilient Electric Grid Transformer Analysis

The response of a high - voltage (HV) transformer to fast rise time voltages, such as that from a electromagnetic pulse (EMP) can result in interruption of power distribution and possibly system failure. To help identify these potential occurrences, it is necessary to develop a transformer model that not only captures the input/output response of the transformer but also the internal behavior. The model constructed should cover the frequency band of interest while capturing the internal physical and electrical characteristics. This broad-band, high-fidelity model would enable the prediction of unwanted effects through simulation. A proposed modeling scheme for a HV transformer is described in Part 1 of this report. Part 2 of this report details assessments of internal voltage and electrical field holdoff testing of transformer insulation dielectric breakdown, including comparison of low frequency (DC/60 Hz) holdoff to rise times characteristic of lightning (1 s) and EMP E1 transients (10 - 30 ns). This initial project is a path toward establishing electrical grid transformer failure criteria for EMP voltage transients. We developed modeling methods and measured breakdown electrical field statistical distributions for direct current, 60 Hz, lightning and EMP characteristic voltage rise times. Methods of nanosecond-scale capacitive discharge unit high voltage source development, suggestions for derating of 60 Hz insulation maximum electrical fields for EMP nanosecond pulse voltage withstand rating, and potential methods for increasing transformer resilience to such fast rise time pulses are described.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2023

Towards Improved Decision Making for the Smarter Grid: Geomagnetic Disturbance Implicit Modeling Uncertainty Quantification

Geomagnetic disturbances can greatly disrupt the power grid operation. This is caused by low-frequency changes in the earth’s magnetic field, which upon interaction with the deep earth conductivity induces a changing electric field at the earth’s surface. This in turn induces quasi-direct currents which have the potential to cause protective devices to operate, widespread damage to high-voltage transformers, or voltage collapse due to induced reactive power losses. While these impacts have been known since the 1940s, only recently have standards for GMD response been implemented. Because these standards are heavily based on models, it is important to understand when it is appropriate to make certain modeling assumptions. In this work, implicit modeling uncertainty is quantified for the purpose of enhanced decision making for disturbance impact mitigation. Considering electromagnetic models, modeling assumptions of non-uniform grounding, imbalanced operation, transformer saturation, and geomagnetically induced currents, voltage estimation values are analyzed. Statistical characteristics of modeling uncertainty are obtained by analysis of synthetically generated data. Results statistically characterize geomagnetic disturbances modeling uncertainty, providing an important tool for impact mitigation.

grid analysis↗

DOE OSTI2023

Aligned carbon fibers-carbon nanotube-polymer-based composite as lithium-ion battery current collector

High energy density demand is pushing the development of high-voltage cathode materials, which necessitates improved electrochemical stability of other battery components such as binders, electrolytes, and current collectors. Current collectors are considered to be an inactive component but still play an essential role. In this study, a metal-free composite film containing directionally aligned carbon fiber (CF), carbon nanotube (CNT), and polymer (P) was developed to replace aluminum foil as a cathode current collector, which relies on forming an Al 2 O 3 layer to ensure electrochemical stability at high voltage. Here, each component in the new cathode current collector played a functional role. The CNTs provided uniform current densities, and CFs improved the electronic conductivity and mechanical strength of the composite material. The polymer enhanced the adhesion of the cathode coating with the current collector and provided an impervious support to the cathode materials. The CF-CNT-P composite demonstrated excellent electrochemical and thermal stability. Cathodes coated on the CF-CNT-P composite exhibited lower charge transfer resistance, improved rate capability, and improved cyclic stability compared with the cathodes deposited on conventional aluminum foil. Additionally, the composite current collector was lighter (1.81 mg/cm 2 and 15 µm thick) than the commonly used aluminum foil (4.35 mg/cm2 and 15 µm thick), which can increase the cell energy density. Additionally, the CF-CNT-P did not need to be separated from the cathode coating during recycling and can be burnt out with binder, simplifying the recycling process.

25 ENERGY STORAGE↗

DOE OSTI2025

EVSE Characterization: V2G EVSE Comparison

As part of the U.S. Department of Energy EVs@Scale consortium Next-Generation Profiles project, results and analysis from the characterization of high-power conductive and wireless charging infrastructure are presented. This characterization is conducted over a wide range of direct current (DC) current and DC voltage operation for nominal test conditions and off-nominal test conditions. Test plans and procedures were developed to define the test configurations and requirements, measurement parameters, and test procedures used throughout testing. Results from a 2024 study conducted on electric vehicle supply equipment (EVSE) characterization by the Idaho National Laboratory (INL) include two bi-directional vehicle-to-grid (V2G) capable EVSEs. These EVSE are referred to as V2G-EVSE9 and V2G-EVSE10. Laboratory testing is conducted at nominal test conditions to characterize the power transfer capabilities, efficiency, power factor, and other power quality metrics of the two DC EVSEs capable of V2G bi-directional power transfer. Results from testing show the performance is consistent for V2G-EVSE9 and V2G-EVSE10 when comparing charging to discharging performance, except for V2G-EVSE10 for power transfer when operating above 70% of the rated DC current. V2G-EVSE10 efficiency is >98% while charging and <91% while discharging at the same operating conditions, near maximum-rated current, at 300VDC. In contrast, V2G-EVSE9 results are consistent for charging and discharging. This EVSE is nearly 96% efficient while charging or discharging when operating over 50% of rated AC power. V2G EVSE performance is also characterized during off-nominal AC grid conditions involving AC voltage deviation (426 VAC to 518 VAC), AC frequency deviation of +2% (58.8 Hz to 61.2 Hz), and AC voltage harmonics injection. Many test conditions have little-to-no impact on performance characteristics of the two EVSEs; however, there are a few notable findings with significant power transfer capability impacts. AC voltage harmonics injection resulted in negative impacts on power quality attributes for both EVSEs, but with no impact on power transfer capability. Off-nominal AC voltage and frequency conditions resulted in unstable or lack of power transfer capability for both EVSEs. V2G-EVSE9 is unable to transfer power when AC voltage is >300V L-N. V2G-EVSE10 is unable to transfer power when AC frequency deviation exceeds +0.8%. V2G energy management system transient response and latency are quantified during laboratory testing. V2G-EVSE9 and V2G-EVSE10 utilize cloud-based V2G energy management systems that command the power transfer level between the EVSE and EV. The latency and response characteristics of the entire systems (web-based user interface, V2G energy management system, cellular communications, and EVSE response) are quantified through laboratory testing for V2G-EVSE9 and V2G-EVSE10. V2G-EVSE9 latency ranges from 0.8 to 1.8 seconds, whereas V2G-EVSE10 latency ranges from 3.4 to 8.8 seconds. The ramp rate to a change in power transfer request also differs between the two EVSEs. V2G-EVSE10 ramp rate ranges from 50% to -250% of rated AC power per second, whereas V2G-EVSE9 rate ranges from 95% to -95% of rated AC power per second. At the highest rate of change in power transfer, V2G-EVSE10 can change from full charge power to full discharge power in less than one second. The V2G EVSE characterization presented in this report provides valuable insights and results for use by numerous entities. This includes modeling and simulation organizations, decision makers, fleet planning, industry stakeholders, and many others involved with the development and deployment of electrified transportation technologies. Additional high-power DC chargers, bidirectional chargers, and inductive power transfer EVSE characterization results are anticipated from additional EVSE brands and models, which will be detailed in future publications in support of the U.S. Department of Energy EVs@Scale consortium Next-Gen Profiles project.

25 ENERGY STORAGE↗

DOE OSTI2024

Optical and photoelectric properties of surface barrier diodes based on n- Hg3In2Te6 crystals

The high radiation resistance of Hg3In2Te6 (MIT) single crystals to large doses of ionizing radiation makes devices quite attractive. Such a feature of the crystal structure has not only important advantages, but also causes serious technological difficulties in doping and controlling the specific resistance within the required limits and type of conductivity of single crystals. These technological difficulties create serious problems when creating structures with a potential barrier, especially with a p-n junction. At the moment, there are no publications on the creation of a p-n junction based on MIT. The only alternative is to create a potential barrier such as a Schottky diode or a metal-dielectric-semiconductor structure. This limits the use of MIT to produce, for example, rectifier diodes that can operate at relatively high reverse bias voltages. The typical resistivity of single crystals of MIT of n-type conductivity, which are used for the manufacture of diodes and photodiodes, is approximately equal to ρ≈103-104 Ω×cm. Such a specific resistance leads to a relatively large resistance of the neutral part of the single crystal, which in turn limits the direct currents of the rectifier diodes and significantly limits an important parameter of photodiodes - the dynamic range of the watt-ampere characteristic. This problem arises from the relatively high series resistance of the substrate. For rectifier diodes, this relatively large series resistance leads to a significant forward bias voltage drop, which reduces both the rectification factor and the amount of rectified current. We have already created diodes and photodiodes on Cr/MIT/Cr single crystals with a specific resistance of ρ≈103-104 Ω×cm. The diodes had relatively small dark currents but had the disadvantage of a relatively large specific resistance of the substrate, which we have already discussed above [1,2,3].

Sklyarchuk, V.↗

DOE OSTI2024

Experimental Validation of a Modular All-Electric Power Take-Off Topology for Wave Energy Converter Enabling Marine Renewable Energy Interconnection

Power electronic converters are an enabling technology for the emerging marine energy applications, such as using ocean waves to produce electricity. This paper outlines the power take-off system and its key components used in a wave energy converter offering modularity and scalability to generate power efficiently. The proposed power take-off system was implemented based on a modular multilevel converter and could be deployed to convert any alternating current electrical energy to a different alternating current for interconnection to grid or non-grid applications. Examples of widespread deployment are supplying electricity to coastal communities or producing clean drinking water. The analysis using both the simulation tests and laboratory experiments verified the design objectives and basic functionality of the developed power take-off system. An acceptable response using a field programmable gate array-based controlled laboratory testbench was achieved, complying with guidelines specified in the prevalent industry standards. Seamless operation during steady-state and transients for the studied wave energy converter was achieved as supported by the obtained results. The key findings of this work were experimentally examined under different load conditions, direct current bus voltage fluctuations, and generator speed–torque regulation. The ability of the power take-off system to generate high-power quality of the waveforms, e.g., against adhering to the IEEE 519-2022 standard for total harmonic distortion limits, is also confirmed.

Engineering↗

DOE OSTI2024

ARC-SAFE: Accelerated Response semiconducting Contactors and Surge Attenuation For DC Electrical systems (Final Scientific/Technical Report)

The landscape of power transmission and distribution is quickly evolving as more power conversion is done through power electronics and transmitted or distributed at medium voltage direct current (MVDC). As power electronics tend to store less energy and be less resilient to faults than conventional power transformers, a reliable and fast protection against faults is critical to protect power electronics (PE) based infrastructure, especially for medium- and high-voltage applications. This motivates the development of PE based protection circuits to replace slower contemporary electromechanical breakers. In this project a novel PE based MVDC circuit breaker is developed; the new design is comprised of 1) a normally-on leg made of commercially-available, cascaded SiC junction field effect transistors (JFETs) with a passive balancing network, and 2) a normally-off leg based on an optically-triggered gallium nitride (GaN) photoconductive semiconductor switch (PCSS). The normally-off leg was designed to be quickly turned on, to divert current to an auxiliary dissipative circuit, as the normally-on leg is turned off. This approach, using solid-state devices, was selected for a high-performance, fast-switching operation for the DC circuit breaker as compared to approaches that use slower mechanical switches. To be practical, the circuit breaker must have low conduction loss (low Ron) in the normally-on leg and fast coordinated triggering of the normally-off leg to avoid damage from inductive flyback, which could be considerable for long lengths of cable.

24 POWER TRANSMISSION AND DISTRIBUTION↗