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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

High-Throughput Uniformity and Defect Monitoring in Low-Temperature Electrolysis Porous Transport Layers Using X-Ray Radiography

Effective quality control (QC) for manufacturing proton exchange membrane water electrolysis (PEMWE) components is critical to enabling widespread adoption of the technology for hydrogen generation. This study investigates X-ray radiography as a novel, high-throughput, potentially in-line QC technique for detecting defects and assessing material property distributions in titanium-based porous transport layers (PTLs) which constitute a crucial component of low temperature PEMWE stacks. We obtain radiographs of a set of fifteen PTLs and model their absorbance of the broadband radiation as a second-order polynomial to account for the non-monoenergetic radiation source used in this study. The resulting model serves as a basis for predicting the areal density and porosity distributions of the PTLs. We find radiography successful in detecting multiple instances of defects, including holes/depressions, cracks, and excess material on the surface or in the pores of the material, demonstrating its potential as a robust in-line QC tool for PTL manufacturing.

08 HYDROGEN↗
NASA NTRS2005

Application of Hilbert-Huang Transform for Improved Defect Detection in Terahertz NDE of Shuttle Tiles

Terahertz NDE is being examined as a method to inspect the adhesive bond-line of Space Shuttle tiles for defects. Terahertz signals are generated and detected, using optical excitation of biased semiconductors with femtosecond laser pulses. Shuttle tile samples were manufactured with defects that included repair regions unbond regions, and other conditions that occur in Shuttle structures. These samples were inspected with a commercial terahertz NDE system that scanned a tile and generated a data set of RF signals. The signals were post processed to generate C-scan type images that are typically seen in ultrasonic NDE. To improve defect visualization the Hilbert-Huang Transform, a transform that decomposes a signal into oscillating components called intrinsic mode functions, was applied to test signals identified as being in and out of the defect regions and then on a complete data set. As expected with this transform, the results showed that the decomposed low-order modes correspond to signal noise while the high-order modes correspond to low frequency oscillations in the signal and mid-order modes correspond to local signal oscillations. The local oscillations compare well with various reflection interfaces and the defect locations in the original signal.

Anastasi, Robert F.↗
NASA NTRS2018

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗
NASA NTRS2018

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗
NASA NTRS1985

Inexpensive Eddy-Current Standard

Radial crack replicas serve as evaluation standards. Technique entails intimately joining two pieces of appropriate aluminum alloy stock and centering drilled hole through and along interface. Bore surface of hole presents two vertical stock interface lines 180 degrees apart. These lines serve as radial crack defect replicas during eddy-current technique setup and verification.

Berry, Robert F., Jr.↗
NASA NTRS2000

Homologous recombination as a potential target for caffeine radiosensitization in mammalian cells: reduced caffeine radiosensitization in XRCC2 and XRCC3 mutants

The radiosensitizing effect of caffeine has been associated with the disruption of multiple DNA damage-responsive cell cycle checkpoints, but several lines of evidence also implicate inhibition of DNA repair. The role of DNA repair inhibition in caffeine radiosensitization remains uncharacterized, and it is unknown which repair process, or lesion, is affected. We show that a radiosensitive cell line, mutant for the RAD51 homolog XRCC2 and defective in homologous recombination repair (HRR), displays significantly diminished caffeine radiosensitization that can be restored by expression of XRCC2. Despite the reduced radiosensitization, caffeine effectively abrogates checkpoints in S and G2 phases in XRCC2 mutant cells indicating that checkpoint abrogation is not sufficient for radiosensitization. Another radiosensitive line, mutant for XRCC3 and defective in HRR, similarly shows reduced caffeine radiosensitization. On the other hand, a radiosensitive mutant (irs-20) of DNA-PKcs with a defect in non-homologous end-joining (NHEJ) is radiosensitized by caffeine to an extent comparable to wild-type cells. In addition, rejoining of radiation-induced DNA DSBs, that mainly reflects NHEJ, remains unaffected by caffeine in XRCC2 and XRCC3 mutants, or their wild-type counterparts. These observations suggest that caffeine targets steps in HRR but not in NHEJ and that abrogation of checkpoint response is not sufficient to explain radiosensitization. Indeed, immortalized fibroblasts from AT patients show caffeine radiosensitization despite the checkpoint defects associated with ATM mutation. We propose that caffeine radiosensitization is mediated by inhibition of stages in DNA DSB repair requiring HRR and that checkpoint disruption contributes by allowing these DSBs to transit into irreparable states. Thus, checkpoints may contribute to genomic stability by promoting error-free HRR.

NASA Discipline Radiation Health↗
NASA NTRS1971

Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Johnson, E. S.↗
NASA NTRS2001

Friction pull plug welding: top hat plug design

Friction Pull Plug Welding is a solid state repair process for defects up to one inch in length, only requiring single sided tooling, or outside skin line (OSL), for preferred usage on flight hardware. The most prevalent defect associated with Friction Pull Plug Welding (FPPW) was a top side or inside skin line (ISL) lack of bonding. Bonding was not achieved at this location due to the reduction in both frictional heat and welding pressure between the plug and plate at the end of the weld. Thus, in order to eliminate the weld defects and increase the plug strength at the plug `top` a small `hat` section is added to the pull plug for added frictional heating and pressure.

Coletta, Edmond R.↗
NASA NTRS2002

Friction pull plug welding: top hat plug design

Friction Pull Plug Welding is a solid state repair process for defects up to one inch in length, only requiring single sided tooling, or outside skin line (OSL), for preferred usage on flight hardware. The most prevalent defect associated with Friction Pull Plug Welding (FPPW) was a top side or inside skin line (ISL) lack of bonding. Bonding was not achieved at this location due to the reduction in both frictional heat and welding pressure between the plug and plate at the end of the weld. Thus, in order to eliminate the weld defects and increase the plug strength at the plug `top` a small `hat` section is added to the pull plug for added frictional heating and pressure.

Coletta, Edmond R.↗
NASA NTRS1992

Giant suppression of flux-flow resistivity in heavy-ion irradiated Tl2Ba2Ca2Cu3O10 films - Influence of linear defects on vortex transport

A large shift of the onset of flux-flow resistivity and the irreversibility line H(irr)(T) to higher temperatures is observed in Tl2Ba2Ca2Cu3O10 films containing linear defects created by Ag(+21) ion irradiation. The H(irr)(T), which has a characteristic L shape in highly anisotropic Tl and Bi based cuprates, becomes more like that of YBa2Cu3O7 in the presence of these defects. The Jc at 77 K also shows a large increase as a result of flux localization at the defects. The transport data indicate that in the H-T plane above H(irr)(T) of the unirradiated material, an ensemble of unoccupied defects is required for effective pinning of each flux line in the system.

Budhani, R. C.↗
NASA NTRS1994

Chromosomal damage observed in first postirradiation metaphases of repair-proficient and -deficient cell lines

Investigation of radiation induced damage in mutant strains of mammalian cells which show a defect in the rejoining of DNA double strand breaks provides an unique opportunity to examine the role of double strand breaks and the mechanisms of double strand break rejoining in the production of chromosome aberrations. This is particularly important, because there is increasing evidence that the DNA double strand break is the major lesion responsible for the formation of chromosome aberrations. To address this issue, we studied the induction of chromosome aberrations in xrs-5 cells, an x-ray sensitive strain of a Chinese hamster ovary cell line, which shows a defect in the rejoining of double strand breaks and their wild-type parent CHO-cells. Because radiosensitivity depends strongly on cellular age, the experiments were performed with synchronous cells.

Ritter, S.↗
NASA NTRS1980

Ion-implanted laser annealed silicon solar cells

Development of low cost solar cells fabrication technology is being sponsored by NASA JPL as part of the Low Cost Solar Array Project (LSA). In conformance to Project requirements ion implantation and laser annealing were evaluated as junction formation techniques offering low cost-high throughput potential. Properties of cells fabricated utilizing this technology were analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicated the laser annealed substrates to be damage free and electrically active. Similar analysis of ion implanted furnace annealed substrates revealed the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibited improved spectral response and conversion efficiency in comparison to furnace annealed cells. An economic projection for LSA indicates a potential for considerable savings from laser annealing technology.

Katzeff, J. S.↗
NASA NTRS1981

Application of laser annealing to solar cell junction formation

The possibility of using high-energy Q-switched Nd:glass lasers to form pn junctions in solar cells by annealing ion-implanted substrates is investigated. The properties of laser annealed cells are analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicate the laser annealed substrates to be damage-free and electrically active. Similar reference analysis of ion-implanted furnace-annealed substrates reveals the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibit excellent conversion efficiency. It is noted that additional improvements are anticipated once the anneal parameters for a back surface field are optimized.

Katzeff, J. S.↗
DOE OSTI2026

Engineering Assembly Kinetics and Line Roughness in Solvent Vapor-Annealed Block Copolymer/Homopolymer Blends

Block copolymer (BCP) directed self-assembly (DSA) is a promising route to enhance lithography resolution by multiplying nanopattern density and reducing feature roughness. Eliminating kinetically trapped self-assembly defects requires fast self-assembly. However, acceleration strategies like solvent vapor annealing or homopolymer blending broaden domain interfaces, implying a trade-off in increased feature roughness. In this work, we experimentally investigate this apparent dilemma between self-assembly kinetics and line roughness for solvent vapor-annealed thin films of a lamellar poly(styrene-block-2-vinylpyridine) (PS-b-P2VP) BCP blended with PS and P2VP homopolymers. Binary blends with PS or P2VP homopolymers and ternary blends incorporating both in equal weight fractions were solvent vapor annealed using acetone, a near-neutral solvent for PS and P2VP, followed by P2VP-selective vapor-phase infiltration with alumina (AlOx) and polymer etching. Binary blends with P2VP exhibit a modest kinetic enhancement but also higher line-edge and -width roughness due to the increased frequency of P2VP protrusions and bridge defects in the alumina line patterns. In contrast, binary blends with PS self-assemble noticeably faster, while domain asymmetry from the added PS homopolymer reduces roughness by curbing the number of alumina protrusions and bridge defects. Ternary blends maintain DSA line patterns across a wider composition window and, at higher homopolymer loadings, reduce roughness at length scales near the lamellar period, consistent with a reduced impact of intradomain compositional fluctuations. These findings provide important insights for codesigning blend compositions and process flows to achieve high-resolution, defect free patterns with minimal roughness through BCP DSA.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1993

Weld joint concepts for on-orbit repair of Space Station Freedom fluid system tube assemblies

Because Space Station Freedom (SSF) is an independent satellite, not depending upon another spacecraft for power, attitude control, or thermal regulation, it has a variety of tubular, fluid-carrying assemblies on-board. The systems of interest in this analysis provide breathing air (oxygen and nitrogen), a working fluid (two-phase anhydrous ammonia) for thermal control, and a monopropellant (hydrazine) for station reboost. The tube assemblies run both internally and externally with respect to the habitats. They are found in up to 50 ft. continuous lengths constructed of mostly AISI 316L stainless steel tubing, but also including some Inconel 625 nickel-iron and Monel 400 nickel-copper alloy tubing. The outer diameters (OD) of the tubes range from 0.25-1.25 inches, and the wall thickness between 0.028-.095 inches. The system operational pressures range from 377 psi (for the thermal control system) to 3400 psi (for the high pressure oxygen and nitrogen supply lines in the ECLSS). SSF is designed for a fifteen to thirty year mission. It is likely that the tubular assemblies (TA's) will sustain damage or fail during this lifetime such that they require repair or replacement. The nature of the damage will be combinations of punctures, chips, scratches, and creases and may be cosmetic or actually leaking. The causes of these hypothetical problems are postulated to be: (1) faulty or fatigued fluid joints--both QD's and butt-welds; (2) micro-meteoroid impacts; (3) collison with another man-made object; and (4) over-pressure strain or burst (system origin). While the current NASA baseline may be to temporarily patch the lines by clamping metal c-sections over the defect, and then perform high pressure injection of a sealing compound, it is clear that permanent repair of the line(s) is necessary. This permanent repair could be to replace the entire TA in the segment, or perhaps the segment itself, both alternatives being extremely expensive and risky. The former would likely require extensive EVA to release TA clamps and pose great risk to other engineering subsystems, and the latter would require major de-servicing of the Station.

Jolly, Steven D.↗
DOE OSTI2024

EXPERIMENTAL VALIDATION OF THEORETICAL BURST STRENGTH SOLUTION FOR DEFECT-FREE THICK-WALLED PIPES

The burst pressure of line pipes is an important strength property required in pipeline design and integrity management. Historically, the Barlow formula in conjunction with the ultimate tensile stress (UTS) of pipeline steels were utilized to estimate the burst strength of line pipes. However, the Barlow formula did not consider the plastic flow effect for ductile steels and is applicable only to thin-walled pipes. In 2006, the present author proposed a new multiaxial plastic yield theory and obtained a theoretical Zhu-Leis solution of burst strength for defect-free thin-walled pipes in term of UTS and strain hardening exponent n of pipeline steels. The Zhu-Leis solution has been validated by various burst test data for thin-walled pipelines for a wide range of steel grades from Grade B to X120. Recently, the present author extended the Zhu-Leis theory of plasticity to thick-walled pipes and obtained the Zhu-Leis solution of burst pressure for thick-walled pipes. The proposed burst pressure solution is applicable to both thin and thick-walled pipes. To experimentally validate the proposed theoretical burst pressure solution, this paper obtains a set of burst test data for three thick-walled pipes in Grade B carbon steel with a nominal diameter of 2.375 inches and three nominal wall thicknesses, resulting in D/t = 15.4, 10.9, 6.9. Through comparisons, these burst data validate the theoretical burst pressure solution for thick-walled pipes. Moreover, two additional burst test datasets collected from literature for thin and thick-walled pipes further validate the proposed burst pressure solution for both thin and thick-walled pipes.

Zhu, Xiankui↗
DOE OSTI2026

Data for Expression of a Bacterial Trehalose 6-Phosphate Synthase Gene otsA in Camelina sativa Seeds Promotes the Channelling of Carbon Towards Oil Accumulation

Improving seed oil yield is essential for developing Camelina sativa as a sustainable biofuel crop. Fatty acid synthesis depends on the production of acetyl-CoA from photosynthetically derived sugars. Trehalose 6-phosphate (T6P), a proxy for sucrose availability, can link sugar status to plant growth and development. Synthesised by trehalose 6-phosphate synthase (TPS) from UDP-glucose and glucose-6-phosphate, T6P plays a regulatory role in metabolism. Our previous studies on Arabidopsis transgenic lines constitutively expressing the E. coli otsA (encoding TPS) showed increased T6P levels and seed triacylglycerol, along with stunted growth. In the present study we express otsA in camelina under the control of a seed-specific Phaseolin promoter. Seeds of the resulting transgenic lines accumulated high levels of T6P, and a 15%–20% increase in total fatty acids and triacylglycerol compared to wild-type. Molecular analysis showed the transgenic seeds had reduced SnRK1 activity, elevated WRI1 protein levels, and increased the levels of WRI1 and its target genes, along with enhanced rates of fatty acid synthesis that increased seed weights relative to wild type. Notably, the increase in oil did not affect seed protein levels but did reduce the soluble metabolite fraction. Crucially, seed-specific expression of otsA mitigated the growth defects associated with constitutive otsA expression, and the transgenic lines showed normal seed development and germination. These findings demonstrate that targeted T6P modulation via seed-specific otsA expression is an effective metabolic engineering strategy to boost oil production in camelina and potentially in other oilseed crops and bioenergy crops such as energycane, sorghum and miscanthus.

Lipids↗