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NASA NTRS2003

Crystallization Physics in Biomacromolecular Systems

The crystals are built of molecules of protein, nucleic acid and their complexes, like viruses, approx. 5x10(exp 3)+ 3x10(exp 6) Da in weight and 2 + 20 nm in effective diameter. This size strongly exceeds action range of molecular forces and makes a big difference with inorganic crystals. Intermolecular contacts form patches on the biomacromolecular surface. Each patch may occupy only a small percent of the whole surface and vary from polymorph to polymorph of the same protein. Thus, under different conditions (pH, solution chemistry, temperature, any area on the macromolecular surface may form a contact. The crystal Young moduli, E approx. equals 0.1 + 0.5 GPa are more than 10 times lower than that of inorganics and the biomolecules themselves. Water within biocrystals (30-70%) is unable to flow unless typical deformation time is longer than approx. 10(exp -5)s. This explains the discrepancy between light scattering and static measurements of E. Nucleation and Growth requires typically concentrations exceeding the equilibrium ones up to 100 times - because of the new size scale results in 10 - 10(exp 3) times lower kinetic coefficients than that needed for inorganic solution growth. All phenomena observed in the latter occur with protein crystallization and are even better studied by AFM. Crystals are typically facetted. Among unexpected findings of general significance are - net molecular exchange flux at kinks is much lower than that expected from supersaturation, steps with low (< approx. 10(exp -2)) kink density at steps follow Gibbs-Thomson law only at very low supersaturations, step segment growth rate may be independent of step energy. Crystal perfection is a must of biocrystallization to achieve the major goal to find 3-D atomic structure of biomacromolecules by x-ray diffraction. Poor diffraction resolution (> 3Angstrom) makes crystallization a bottleneck for structural biology. All defects typical of small molecule crystals are found in biocrystals, but the defects responsible for poor resolution are not identified. Conformational changes are one of them. Biocrystallization in microgravity reportedly results in 20% cases of better crystals. The mechanism of how lack of convection can do this is still not clear. Lower supersaturation, self-purification &om preferentially trapped homologous impurities and step bunching are viable hypotheses.

Chernov, A. A.↗

NASA NTRS1989

Delayed Shutters For Dual-Beam Molecular Epitaxy

System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

Grunthaner, Frank J.↗

NASA NTRS1981

Study of radiation induced deep-level defects and annealing effects in the proton irradiated AlGaAs-GaAs solar cells

The radiation induced deep-level defects and the recombination parameters in the proton irradiated AlGaAs-GaAs p-n junction solar cells were investigated over a wide range of proton energies (from 50 KeV to 10 MeV) and proton fluences (from 10 to the 10th to 10 to the 13th P/sq cm), using DLTS, I-V, C-V, and SEM-EMIC measurement techniques. The measurements were used to determine the defect and recombination parameters such as defect density and energy level, carrier lifetimes, and the hole diffusion lengths in the GaAs LPE layers. Results show that a good correlation was obtained between the measured defect parameters and the dark recombination current as well as the performance parameters of the solar cells. The most damages to the cell were produced by the 200 KeV protons. In addition, the effects of low temperatures (200 to 400 C) thermal annealing on the deep-level defects and the dark current of the 200 KeV proton irradiated samples were examined.

Li, S. S.↗

NASA NTRS2002

Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

nanotechnology DLTS optical properties pn diodes q↗

NASA NTRSDate not supplied

Fault Detection and Performance Monitoring of Propellers in Electric UAV

Unmanned aerial vehicles (UAVs) are used in various industries such as agriculture and logistics, to name but a few, where their applications are beyond basic mapping, surveillance, and photography. In near future, UAVs are expected to be used in package delivery service and larger electric vertical takeoff and landing vehicles will be employed for urban air mobility applications (air taxi). Thus, several electric propulsion systems will enter the low-altitude airspace with frequent take offs and landings. To achieve state-of-the-art safety standards under such high traffic density, UAVs will require in-time fault detection and performance monitoring of critical powertrain components. This work focuses on propeller blade performance and damage detection in electric UAVs. Propellers are the fastest moving component in an UAV; even a minor defect in the propeller blades could cause performance deterioration, with consequent challenges in flying through the planned trajectory or adhere to the safety requirements of the operation. Monitoring and updating aerodynamic efficiency of each rotor would therefore enable the detection of off-nominal propeller conditions thus magnifying the state-awareness of powertrain monitoring systems based on the acquired electrical signals. We use an extended Kalman filter-based parameter estimation algorithm that incorporates time history responses from UAV powertrain in conjunction with a full powertrain system model. Propeller fault detection is achieved by incorporating the aerodynamic parameters of propeller into the powertrain model. The proposed technique is successfully validated with numerical simulations.

Unmanned aerial vehicles↗

NASA NTRS2000

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

Su, Ching-Hua↗

NASA NTRS2002

Durability Issues for the Protection of Materials from Atomic Oxygen Attack in Low Earth Orbit

Low Earth orbital atomic oxygen is capable of eroding most polymeric materials typically used on spacecraft. Solar array blankets, thermal control polymers, and carbon fiber matrix composites are readily oxidized to become thinner and less capable of supporting the loads imposed upon them. Protective coatings have been developed that are durable to atomic oxygen to prevent oxidative erosion of the underlying polymers. However, the details of the surface roughness, coating defect density, and coating configuration can play a significant role as to whether or not the coating provides long duration atomic oxygen protection. Identical coatings on different surface roughness surfaces can have drastically different durability results. Examples and analysis of the causes of resultant differences in atomic oxygen protection are presented. Implications based on in-space experiences, ground laboratory testing, and computational modeling indicate that thin film vacuum-deposited aluminum protective coatings offer much less atomic oxygen protection than sputter-deposited silicon dioxide coatings.

Banks, Bruce↗

NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗

NASA NTRS1984

Process Research of Polycrystalline Silicon Material (PROPSM)

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Culik, J. S.↗

NASA NTRS1986

Process-induced defects in solar cell silicon

The microstructure of as-grown and processed, edge-defined film-fed grown, silicon ribbons was studied in order to identify the basic mechanisms responsible for the change of the as-grown defect structure during processing at elevated temperatures. The short heat treatment required to diffuse the p-n junction was sufficient to cause heterogeneous precipitation of impurity atoms, particularly transition metals. In addition, an elastic recovery of the ribbon occurred by dislocation glide, resulting in the formation of a polygonizationlike structure of subboundaries in the base. Mechanisms are suggested by which twin boundaries, acting as dislocation obstacles, can concentrate the relatively low average dislocation densities typical of edge-defined film-fed grown ribbons (10 to the 4th to 10 to the 8th/sq cm) to values which are sufficient to induce the formation of subgrainlike boundary structures.

Gleichmann, R.↗

NASA NTRS1996

The growth of low band-gap InAs on (111)B GaAs substrates

Growth on the (111)B orientation exhibits a number of advantageous properties as compared to the (100) during the early stages of strained-layer epitaxy. In accordance with a developing model of nucleation and growth, we have deposited thin (60 A - 2500 A), fully relaxed InAs films on (111)B GaAs substrates. Although thicker InAs films are subject to the formation of twin defects common to epitaxy on the (111)B orientation, appropriate control of the growth parameters can greatly minimize their density. Using this knowledge base, InAs films up to 2 microns in thickness with improved morphology and structural quality have been grown on (111)B GaAs substrates.

Welser, Roger E.↗

NASA NTRS1995

The Growth of Low Band-Gap InAs on (111)B GaAs Substrates

Weiser, R. E.↗

NASA NTRS2011

The Role of Water in the Stability of Cratonic Keels

Cratons are typically underlain by large, deep, and old lithospheric keels (to greater than 200 km depth, greater than 2.5 Ga old) projecting into the asthenosphere (e.g., Jordan, 1978; Richardson et al., 1984). This has mystified Earth scientists as the dynamic and relatively hot asthenosphere should have eroded away these keels over time (e.g., Sleep, 2003; O'Neill et al., 2008; Karato, 2010). Three key factors have been invoked to explain cratonic root survival: 1) Low density makes the cratonic mantle buoyant (e.g., Poudjom Djomani et al., 2001). 2) Low temperatures (e.g., Pollack, 1986; Boyd, 1987), and 3) low water contents (e.g., Pollack, 1986), would make cratonic roots mechanically strong. Here we address the mechanism of the longevity of continental mantle lithosphere by focusing on the water parameter. Although nominally anhydrous , olivine, pyroxene and garnet can accommodate trace amounts of water in the form of H bonded to structural O in mineral defects (e.g., Bell and Rossman, 1992). Olivine softens by orders of magnitude if water (1-1000 ppm H2O) is added to its structure (e.g., Mackwell et al., 1985). Our recent work has placed constraints on the distribution of water measured in peridotite minerals in the cratonic root beneath the Kaapvaal in southern Africa (Peslier et al., 2010). At P greater than 5 GPa, the water contents of pyroxene remain relatively constant while those of olivine systematically decrease from 50 to less than 10 ppm H2O at 6.4 GPa. We hypothesized that at P greater than 6.4 GPa, i.e. at the bottom of the cratonic lithosphere, olivines are essentially dry (greater than 10 ppm H2O). As olivine likely controls the rheology of the mantle, we calculated that the dry olivines could be responsible for a contrast in viscosity between cratonic lithosphere and surrounding asthenosphere large enough to explain the resistance of cratonic root to asthenospheric delamination.

Peslier, Anne H.↗

NASA NTRS1989

Improved defect analysis of Gallium Arsenide solar cells using image enhancement

A new technique has been developed to capture, digitize, and enhance the image of light emission from a forward biased direct bandgap solar cell. Since the forward biased light emission from a direct bandgap solar cell has been shown to display both qualitative and quantitative information about the solar cell's performance and its defects, signal processing techniques can be applied to the light emission images to identify and analyze shunt diodes. Shunt diodes are of particular importance because they have been found to be the type of defect which is likely to cause failure in a GaAs solar cell. The presence of a shunt diode can be detected from the light emission by using a photodetector to measure the quantity of light emitted at various current densities. However, to analyze how the shunt diodes affect the quality of the solar cell the pattern of the light emission must be studied. With the use of image enhancement routines, the light emission can be studied at low light emission levels where shunt diode effects are dominant.

Kilmer, Louis C.↗

NASA NTRS1983

Technical and investigative support for high density digital satellite recording systems

Recent results of dropout measurements and defect analysis conducted on one reel of Ampex 721 which was submitted for evaluation by the manufacturer are described. The results or status of other tape evaluation activities are also reviewed. Several changes in test interpretations and applications are recommended. In some cases, deficiencies in test methods or equipment became apparent during continued work on this project and other IITRI tape evaluation projects. Techniques and equipment for future tasks such as tape qualification are also recommended and discussed. Project effort and expenditures were kept at a relatively low level. This rate provided added development time and experience with the IITRI Dropout Measurement System, which is approaching its potential as a computer based dropout analysis tool. Another benefit is the expanded data base on critical parameters that can be achieved from tests on different tape types and lots as they become available. More consideration and effort was directed toward identification of critical parameters, development of meaningful repeatable test procedures, and tape procurement strategy.

Schultz, R. A.↗

NASA NTRS2002

Influence of Cooling Channel Geometry on the Thermal Response in Silicon Nitride Plates Studied

Engine manufacturers are continually attempting to improve the performance and efficiency of internal combustion engines. Usually they raise the operating temperature or reduce the cooling air requirement for the hot section turbine components. However, the success of these attempts depends on finding materials that are lightweight, are strong, and can withstand high temperatures. Ceramics are among the top candidate materials considered for such harsh applications. They hold low-density, high-temperature strength, and thermal conductivity, and they are undergoing investigation as potential materials for replacing nickel-base alloys and superalloys that are currently used for engine hot-section components. Ceramic structures can withstand higher operating temperatures and a harsh combustion environment. In addition, their low densities relative to metals help reduce component mass. The long-term objectives of the High Temperature Propulsion Components (HOTPC) Project are to develop manufacturing technology, thermal and environmental barrier coatings (TBC/EBC), and the analytical modeling capability to predict thermomechanical stresses in minimally cooled silicon nitride turbine nozzle vanes under simulated engine conditions. Two- and three-dimensional finite element analyses with TBC were conducted at the NASA Glenn Research Center. Nondestructive evaluation was used to determine processing defects. The study included conducting preliminary parametric analytical runs of heat transfer and stress analyses under steady-state conditions to demonstrate the feasibility of using cooled Si3N4 parts for turbine applications. The influence of cooling-channel shapes (such as circular, square, and ascending-order cooling channels) on cooling efficiency and thermal stresses was investigated. Temperature distributions were generated for all cases considered under both cooling and no-cooling conditions, with air being the cooling medium. The table shows the magnitude of the maximum and minimum temperature obtained for the plates under air cooling. Each channel's cross-sectional shape delivered a different temperature; however, the two-dimensional analyses for circular and square or equal-side rectangular holes produced close results. Moreover, the model of the panel with ascending order cooling channels experienced the lowest temperature. A difference of near 260 C was found among the three cooling-hole configurations investigated. The ascending-order cooling channels arrangement showed superior performance by attaining the lowest temperature (1077 C) in comparison to the circular (1379 C) and square (1343 C) channels for the same cooling-hole size. This indicates that the panel with ascending-order cooling channels is the most suitable configuration regardless of the complexity involved in its manufacture. More details pertaining to this study are reported.

Abdul-Aziz, Ali↗

NASA NTRS2002

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗

NASA NTRS1999

Gravitational Effects on the Morphology and Kinetics of Photodeposition of Polydiacetylene Thin Films From Monomer Solutions

The goal of this proposed work is to study gravitational effects on the photodeposition of polydiacetylene thin films from monomer solutions onto transparent substrates. Polydiacetylenes have been an extensively studied class of organic polymers because they exhibit many unusual and interesting properties, including electrical conductivity and optical nonlinearity. Their long polymeric chains render polydiacetylenes readily conducive to thin film formation, which is necessary for many applications. These applications require thin polydiacetylene films possessing uniform thicknesses, high purity, minimal inhomogeneities and defects (such as scattering centers), etc. Also, understanding and controlling the microstructure and morphology of the films is important for optimizing their electronic and optical properties. The lack of techniques for processing polydiacetylenes into such films has been the primary limitation to their commercial use. We have recently discovered a novel method for the formation of polydiacetylene thin films using photo-deposition from monomer solutions onto transparent substrates with UV light. This technique is very simple to carry out, and can yield films with superior quality to those produced by conventional methods. Furthermore, these films exhibit good third-order properties and are capable of waveguiding. We have been actively studying the chemistry of diacetylene polymerization in solution and the photo-deposition of polydiacetylene thin films from solution. It is well-known that gravitational factors such as buoyancy-driven convection and sedimentation can affect chemical and mass transport processes in solution. One important aspect of polydiacetylene thin film photodeposition in solution, relevant to microgravity science, is that heat generated by absorption of UV radiation induces thermal density gradients that under the influence of gravity, can cause fluid flows (buoyancy-driven convection). Additionally, changes in the chemical composition of the solution during polymerization may cause solutal convection. These fluid flows affect transport of material to and from the film surface and thereby affect the kinetics of the growth process. This manifests itself in the morphology of the resulting films; films grown under the influence of convection tend to have less uniform thicknesses, and can possess greater inhomogeneities and defects. Specifically, polydiacetylene films photodeposited from solution, when viewed under a microscope, exhibit very small particles of solid polymer which get transported by convection from the bulk solution to the surface of the growing film and become embedded. Even when carried out under conditions designed to minimize unstable density gradients (i.e., irradiating the solution from the top), some fluid flow still takes place (particles remain present in the films). It is also possible that defect nucleation may be occurring within the films or on the surface of the substrate; this, too, can be affected by convection (as is the case with crystal growth). Hence films grown in 1-g will, at best, still possess some defects. The objective of this proposal is to investigate, both in 1-g and in low-g, the effects of gravitational factors (primarily convection) on the dynamics of these processes, and on the quality, morphology, and properties of the films obtained.

Paley, Mark S.↗