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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures

Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal/ferromagnet bilayer systems. We observe the USMR in Pt/α-Fe 2 ⁢O 3 bilayers where the α-Fe 2 ⁢O 3 is an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creation and annihilation of AFM magnons by spin orbit torque due to the thermal random field. However, unlike its ferromagnetic counterpart, theoretical modeling reveals that the USMR in Pt/α-Fe 2 ⁢O 3 is determined by the antiferromagtic magnon number with a non-monotonic field dependence. In conclusion, our findings extend the generality of the USMR which pave the ways for the highly sensitive detection of AFM spin state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler Pt 1 - x Au x LuSb

We report that topological materials often exhibit remarkably linear nonsaturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically nontrivial states in the emergence of such a behavior has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers, we controllably tune the LMR behavior in Pt 1-x Au x LuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise gives rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semimetallic bulk band structure, as is the case in multifunctional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Hysteresis Reduction in Tunneling Magnetoresistive Sensor With AC Modulation Magnetic Field

A simple and practical AC modulation method to reduce the hysteresis in tunneling magnetoresistive sensor is demonstrated. It is shown that with a suitable AC modulation magnetic field that is applied along the sensing direction of TMR sensor, the hysteresis in the sensor can be reduced to a negligible level. And depending on the amplitude of the modulation field, the sensitivity and the dynamic range of the TMR sensor can be tuned to meet practical requirements in specific applications. Here, the influence of the modulation on the noise of TMR sensor is also studied.

42 ENGINEERING↗
NASA NTRS1999

Giant Magnetoresistive (GMR) Sensor Microelectromechanical System (MEMS) Device

The measurement of acceleration has been accomplished using several technologies in high-reliability applications such as guidance control, detonation, and shock/vibration measurement. Electromechanical, piezoelectric, piezoresistive, and capacitive acceleration sensors are available and the literature pertinent to giant magnetoresistive sensors (GMR) for the above applications are scanty.

acceleration MEMS GMR giant magnetoresistive senso↗
DOE OSTI2020

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. In this work, the magnetic and electronic properties of CrSBr are reported, an air-stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, T N = 132 ± 1 K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is Δ E = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin-based electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Pseudotunnel Magnetoresistance in Twisted van der Waals Fe 3 GeTe 2 Homojunctions

Abstract Twistronics, a novel engineering approach involving the alignment of van der Waals (vdW) integrated two‐dimensional materials at specific angles, has recently attracted significant attention. Novel nontrivial phenomena have been demonstrated in twisted vdW junctions (the so‐called magic angle), such as unconventional superconductivity, topological phases, and magnetism. However, there have been only few reports on integrated vdW layers with large twist angles θ t , such as twisted interfacial Josephson junctions using high‐temperature superconductors. Herein, vdW homojunctions of the thin‐magnetic flakes, Fe 3 GeTe 2 (FGT), with large θ t ranging from 0° to 90°, without inserting any tunnel barriers are assembled. Nevertheless, these vdW homojunctions exhibit tunnel‐magnetoresistance (TMR) like behavior (pseudo‐TMR (PTMR) effect) with the ratios highly sensitive to the θ t values, revealing that the vdW gap at the junction interface between the twisted FGT layers behaves like a tunnel barrier and the θ t serves a control parameter for PTMR by drastically varying magnitudes of the lattice‐mismatch and the subsequent appearance of antiferromagnetic (AFM) spin alignment. First‐principles calculations considering vacuum gaps indicate strong dependence of TMR on the θ t driven by the sixfold screw rotational symmetry of bulk FGT. The present homojunctions hold promise as a platform for novel AFM spin‐dependent phenomena and spintronic applications.

Obata, Reiji [Faculty of Science and Engineering A↗
DOE OSTI2026

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

Resolving sub-10 nm spin switching and the associated terahertz (THz) electrodynamics during the colossal magnetoresistance (CMR) transition is a definitive frontier in reaching the fundamental spatial, temporal, and energy-dissipation limits of spin-electronics. Yet, simultaneous control of high magnetic field, cryogenic environment, and nanometer resolution has remained an elusive benchmark for THz nanoscopy, leaving the local THz dynamics of these transitions largely unexplored. Here, we overcome these limitations by utilizing a custom-built cryogenic magneto-THz scattering-type scanning near-field optical microscopy (cm-THz-sSNOM) to resolve the near-field THz spectroscopic evolution of the magnetic field-driven CMR transition in a manganite single crystal. Our measurements provide a nanoscale visualization of the THz conductivity, capturing the moment that magnetic-field-induced spin switching triggers the transition from an antiferromagnetic insulator to a ferromagnetic metal. An ellipsoidal near-field model reveals a multi-scale transition initiated by 1–2 nm isolated spin-flip sites at low magnetic fields, which coalesce into ∼15 nm conducting regions as the threshold field is approached. These results provide an nano-THz view of CMR switching, establishing an analysis framework for mapping spin–charge–lattice–orbit–coupled dynamics at spatial scales that transcend the nominal sSNOM resolution.

Haeuser, Samuel [Iowa State University, Ames, IA (↗
DOE OSTI2022

Surface magnetic anisotropy-mediated spin Hall magnetoresistance and spin Seebeck effects in a YIG/Pt heterostructure

The role of magnon-phonon coupling in the low-temperature behavior of the spin Seebeck effect (SSE) in YIG/Pt has been puzzling for more than a decade. Here, to elucidate the origin of the anomalous peak around 80 K, we investigate the temperature evolution of SSE, spin Hall magnetoresistance (SMR), and magnetic anisotropy in the same YIG/Pt heterostructure. We find that these effects, along with magnetic damping, show the peaks at the same temperature (~80 K). This simultaneous occurrence, where no heat is applied in the case of SMR, rules out the phonon-magnon drag related origin of SSE in the YIG/Pt system. We further show that the intrinsic surface anisotropy behavior in YIG is responsible for controlling the SSE, SMR, and magnetic damping in the YIG/Pt structure. Our findings not only help to understand these effects fundamentally but also provide an effective way for improving them by manipulating the surface magnetic anisotropy for spin caloritronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Fermi surface origin of the low-temperature magnetoresistance anomaly

Magnetoresistance (MR) at a fixed field can demonstrate a non-monotonic temperature dependence—an anomaly—in many systems, including low-dimensional chalcogenides, spin- and charge-density-wave metals, and topological semimetals. These systems are often low-carrier-density compensated metals, and the physics are expected to be quasi-classical. Nevertheless, the MR anomaly also exists in the highly conductive metals Cr, Mo, and W for both linear and quadratic field dependence, with their non-saturation attributed to either open orbit or electron-hole compensation. We argue that quantum transport across sharp Fermi surface arcs, but not necessarily the full cyclotron orbit, governs this MR anomaly, thereby accounting for the profound effects of disorder. In Cr, an overlay exists between three temperature dependences: MR at a constant high field, linear MR at a low field, and Shubnikov-de Haas (SdH) oscillations of the smallest orbit. In Mo, the MR anomaly extends beyond the temperature of its SdH oscillations but disappears before Kohler’s scaling reemerges.

Feng, Yejun [Okinawa Institute of Science and Tech↗
DOE OSTI2026

Unveiling field-transverse spin anisotropy in the spin liquid candidate α-RuCl3 via spin Hall magnetoresistance

α-RuCl3 has emerged as a possible candidate for a quantum spin liquid (QSL) that promises exotic quasiparticles relevant for fault-tolerant quantum computation. Here, we report spin-sensitive transport measurements using a proximal spin Hall metal, platinum (Pt), to probe magnetic moments in the insulator α-RuCl3. We observe spin Hall magnetoresistance (SMR), where both the transverse and longitudinal resistivities exhibit angular oscillations between the in-plane magnetic field and the current, driven by the interplay between the spin Hall effect in Pt and local magnetic moments in α-RuCl3. These oscillations occur from 1.5 to 18 T, covering the zigzag antiferromagnetic, putative QSL, and supposedly partially field-polarized phases. The phase of the SMR oscillations suggests that the local moments, whether static or fluctuating, develop spin anisotropy with a quantization axis in-plane and largely transverse to the magnetic field across all fields from 1.5 to 18 T. Temperature dependence indicates that the spin anisotropy operates at an energy scale similar to that of the reported QSL signatures in α-RuCl3.

Idzuchi, Hiroshi [Tohoku University, Japan]↗
DOE OSTI2021

Antiferromagnetic Order and Linear Magnetoresistance in Fe-Substituted Shandite Co 3 In 2 S 2

Co 3 In 2 S 2 is a shandite phase closely related to the ferromagnetic Weyl semimetal Co 3 Sn 2 S 2 and contains Co atoms on an ideal kagome net. Elemental substitutions in Co 3 Sn 2 S 2 have been shown to invariably suppress its magnetism, and it remains a rare example of a shandite phase with magnetic order. Here, we report a new magnetic shandite compound discovered by substituting Fe into Co 3 In 2 S 2 . Single crystals of (Co 1–x Fe x ) 3 In 2 S 2 were grown, and neutron diffraction, ac and dc magnetization, and heat capacity measurements reveal long-range antiferromagnetic order with an interesting noncollinear structure and transition temperatures from 11 to 17 K. Partially substituting Fe for Co was inspired by calculated electronic structures, which suggest that Co 3 In 2 S 2 is near a magnetic instability and shows a peak in the density of states that can be approached by hole doping. While the focus of the present work is primarily on magnetism, there is a nodal ring below the Fermi energy in Co 3 In 2 S 2 that may also provide interest from a topological perspective. Potentially related to this, we find large, linear, nonsaturating magnetoresistance in this compound. Furthermore, this work expands the scope of magnetic topological materials among shandites and motivates similar chemical manipulation studies to reveal hidden magnetic instabilities in this important family and other topological systems.

36 MATERIALS SCIENCE↗
DOE OSTI2022

SrV 0.3 Fe 0.7 O 2.8 : A Vacancy-Ordered Fe-Based Perovskite Exhibiting Room-Temperature Magnetoresistance

We report room-temperature (RT) magnetoresistance (MR) in a novel Fe-based perovskite, SrV 0.3 Fe 0.7 O 2.8 . This compound contains ordered oxygen vacancies in every fifth primitive perovskite (111)p plane, leading to a layered structure consisting of triple-octahedral and double-tetrahedral layers. Along with the oxygen vacancies, the transition-metal ions are also ordered: the octahedral sites are occupied by 100% of Fe ions, while the tetrahedral sites are occupied by 25% of Fe ions and 75% of V ions. As a result, SrV 0.3 Fe 0.7 O 2.8 forms a magnetically striped lattice in which the octahedral layers with 100% of magnetic Fe ions are separated by the diluted magnetic layer. Finally, the compound exhibits weak ferromagnetism and shows a large negative MR (-5% at 3 T) at RT, despite the small saturation moment (0.4 μB/Fe atom). Thus, this type of layered compound is promising for further large MR by an increase of magnetization through chemical substitution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Pressure-Induced Metal-like Transport and Magnetoresistance in a Au 2+ –Au 3+ Halide Perovskite

The Cs 4 Au II Au III 2 Cl 12 perovskite (1), featuring AuCl 4 trimers separated by vacancies, enables the first high-pressure study of Au 2+/3+ mixed-valence. Our computational analysis of the gold frontier orbitals suggests that the Au 2+ →Au 3+ intervalence charge transfer (IVCT) occurs across the vacancies. Computational structures indicate that these vacancies rapidly shrink with pressure and the Au 2+ and Au 3+ coordination spheres become very similar at the phase transition to nearly cubic symmetry at ca. 15 GPa─enabling facile IVCT. Although the activation energy of conductivity of 0.73(4) meV and far-infrared absorption indicate a small but nonzero bandgap, ambient thermal energy drives the IVCT, affording metallic properties: prominent infrared reflectivity and transport values of 10 2 S·cm –1 . This prompted us to perform the first high-pressure studies of magnetoresistance (MR) and Hall effect in halide perovskites. At 16 GPa, the MR increases by 9.3% at 2 K and 9 T; this value is maintained up to 27 GPa, when a local distortion drives electronic localization. By globally fitting the MR and Hall resistance to a two-carrier model we quantify how the carrier densities and mobilities evolve with pressure. Thus, metal-like transport and MR in 1 is driven by a pressure-induced transition from localized to partially delocalized mixed-valence.

Deschene, Christina R. [Stanford University, CA (U↗