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At least 91 records · Page 5

Microwave sensor for ice detection

A microwave technique has been developed for detecting ice build-up on the wing surfaces of commercial airliners and highway bridges. A microstrip patch antenna serves as the sensor, with changes in the resonant frequency and impedance being dependent upon the overlying layers of ice, water and glycol mixtures. The antenna sensor is conformably mounted on the wing. The depth and dielectric constants of the layers are measured by comparing the complex resonant admittance with a calibrated standard. An initial breadboard unit has been built and tested. Additional development is now underway. Another commercial application is in the robotics field of remote sensing of coal seam thickness.

Arndt, G. D.↗

Microwave Sensor for Ice Detection

A microwave technique has been developed for detecting ice build-up on the wing surfaces of commercial airliners and highway bridges. A microstrip patch antenna serves as the sensor, with changes in the resonant frequency and impedance being dependent upon the overlying layers of ice, water, and glycol mixtures. The antenna sensor is conformably mounted on the wing. The depth and dielectric constants of the layers are measured by comparing the complex resonant admittance with a calibrated standard. An initial breadboard unit has been built and tested. Additional development is now underway.

Arndt, G. D.↗

Design, Fabrication, and Testing of a TiN Ti TiN Trilayer KID Array for 3mm CMB Observations

Kinetic inductance detectors (KIDs) are a promising technology for astronomical observations over a wide range of wavelengths in the mm and sub-mm regime. Simple fabrication, in as little as one lithographic layer, and passive frequency-domain multiplexing, with readout of up to 1000 pixels on a single line with a single cold amplifier, make KIDs an attractive solution for high-pixel-count detector arrays. We are developing an array that optimizes KIDs for optical frequencies near 100GHz to expand their usefulness in mm-wave applications, with a particular focus on CMBB-mode measurement efforts in association with the QUBIC telescope. We have designed, fabricated, and tested a 20-pixel prototype array using a simple quasi lumped microstrip design and pulsed DC reactive magnetron-sputtered TiNTiTiN trilayer resonators, optimized for detecting 100GHz (3mm) signals. Here we present a discussion of design considerations for the array, as well as preliminary detector characterization measurements and results from a study of TiN trilayer properties.

passive frequency-domain multiplexing↗

Low-Loss Microstrip Transmission Line Fabricated with Improved Liftoff Process

The µ-Spec integrated spectrometer operating at ~500 GHz, employs thin film superconducting Nb microstrip transmission lines deposited directly on a thin (450 nm) single-crystal silicon dielectric. This single-crystal silicon layer is chosen as the dielectric layer due to its low intrinsic loss, with the goal of achieving both high- efficiency and precise phase control in a compact spectrometer architecture. To avoid roughening or etching through the thin single-crystal silicon dielectric a liftoff technique was developed for patterning these microstrip transmission lines and ground plane structures. This two- layer liftoff process was designed for use with sputter deposition and resulted in a US patent. Although this original technique provided precise control of linewidth, results of initial prototype spectrometer devices and separate diagnostic co-planer waveguide resonator devices showed that unexpected loss was being introduced due to the lift-off process. This extra loss was believed to be due to the “tails” (thin tapered regions) at the edge of the metal traces resulting from the sputtering process, as well as an amorphous oxide layer at the Nb-Si interface. We have since demonstrated an improved lift-off technique, which provides a clean metal-Si interface and removes the loss-inducing tails by a two-step selective etching method. This results in a decrease in microwave loss by more than an order of magnitude when measured in co-planar waveguide microwave resonator structures. We present these microwave test results and also SEM and TEM images of the microstrip interfaces and edge profiles before and after application of the improved process.

Hess, Larry A.↗

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.

Siegel, Peter↗

Multimaterial Aerosol Jet Printed Magnetic Nanocomposites for Microwave Circuits

Here this article demonstrates the process and characterization of additively manufactured polymer-matrix magnetic nanocomposites. These nanocomposites are composed of nickel-zinc ferrite (Ni 0.5 Zn 0.5 Fe 2 O 4 ) nanoparticles in a polyimide matrix. These materials are printed using multimaterial aerosol jet printing where aerosols of nickel-zinc ferrite and polyimide inks are mixed in place to fabricate structures with nonunity relative permeability. To characterize these materials, we use energy-dispersive X-ray spectroscopy to estimate the content of ferrite in the composite, fitted simulation models, and ring resonator measurements to estimate the permeability. In fully aerosol jet printed 1-mm 2 inductors, we demonstrate an increase in inductance density of 40% in a 4.5-turn microstrip spiral inductor using this printed composite. These fully printed inductors demonstrate an inductance density of 4.2-nH/mm 2 . EDS analysis shows films with 18 wt.% Ni 0.5 Zn 0.5 Fe 2 O 4 . Finally, we show microstrip transmission lines on printed composite compared to the same on polyimide subjected to a dc magnetic bias, displaying a magnetic resonance behavior.

42 ENGINEERING↗

A Compact Dual-Band Bowtie Antenna for RF and ISM bands Operation

Traditionally, bowtie antennas have been known to exhibit wide impedance characteristics, omnidirectional radiation patterns, and linear polarization. There is a broad range of applications from medical imaging, archaeological survey, and Ground Penetrating Radar (GPR) to trackers and sensor networks where wideband bowtie antenna designs are required for their operations. Broadening the bandwidth of bowtie antenna requires widening the flare angle of the bowtie arms, which consequently results in a large surface area that may not be suitable for space-constrained applications. Moreover, drawback attributes of the wideband bowtie designs feature inconsistent radiation pattern across the bandwidth and low signal-to-noise (SNR) ratios. As it is known, the SNR would be improved in dual- or multi-band antennas due to their reduced bandwidth. To this end, dual-band/multi-band antennas are preferred over wideband antennas in applications where more than a single frequency of interest is present. Previously, a two-port double-dipole elements was reported, whose arms were orthogonally interleaved to facilitate operation in both the standard WLAN frequency bands (J. M. Steyn and et. al, Progress in Electromagnetic Research, Vol. – 10 pp. 151-161). Even though the antenna is not very compact it does exhibit good cross-polarization, moderate gain in both frequency bands. Another dual-band bowtie antenna which excites two bands using a single transmission line was reported (Wen Chao Zheng and et. al, IEEE Trans. Antennas propag., 2014). The design was compact and did not need multi-port feeding network. In this paper, a dual-band compact bowtie antenna operating at 900 MHz (RF band) and 2.45 GHz (ISM band) using a single excitation port is introduced. It is printed on a 1.54mm thick dielectric substrate (εr = 3.38). The antenna consists of two sets of bowtie arms, a microstrip transmission line to feed the bowtie arms, and a ground plane acting as a reflector to partially reduce the back radiation. One of the bowtie arms of each frequency is printed on the top layer and the other arm, which is mirror imaged, is printed on the bottom layer of the substrate. The length of the bowtie controls the resonance frequency of the antenna and the flare angle controls the bandwidth of the antenna. The microstrip transmission line, connected to a 50 Ω SMA probe, feeds the bowtie antenna. The compact antenna can be used for both RF and ISM band applications. The bowtie arms at the lower frequency band are miniaturized by elongating their electrical lengths. The influence of miniaturizing the bowtie arms and the supporting partial ground plane is observed in the reduced peak gain and degraded front-to-back ratio. These are partly neutralized using four quarter-wave choke-slots in the ground plane with two on each side of the feeding transmission line. The proposed antenna is numerically investigated and finalized by the finite-element based full-wave EM solver, ANSYS HFSS. The miniaturization has reduced the ground plane size by ~45% and the arms size by ~41%. In addition to the size reduction benefits, the antenna shows reasonable peak gain and front-to-back ratio in both the bands. The corresponding results will be presented and discussed at the conference.

Saininad Naik↗

[Activities of the Department of Electrical Engineering, Howard University]

Theoretical derivations, computer analysis and test data are provided to demonstrate that the cavity model is a feasible one to analyze thin-substrate, rectangular-patch microstrip antennas. Seven separate antennas were tested. Most of the antennas were designed to resonate at L-band frequencies (1-2 GHz). One antenna was designed to resonate at an S-band (2-4 GHz) frequency of 2.025 GHz. All dielectric substrates were made of Duroid, and were of varying thicknesses and relative dielectric constant values. Theoretical derivations to calculate radiated free space electromagnetic fields and antenna input impedance were performed. MATHEMATICA 2.2 software was used to generate Smith Chart input impedance plots, normalized relative power radiation plots and to perform other numerical manipulations. Network Analyzer tests were used to verify the data from the computer programming (such as input impedance and VSWR). Finally, tests were performed in an anechoic chamber to measure receive-mode polar power patterns in the E and H planes. Agreement between computer analysis and test data is presented. The antenna with the thickest substrate (e(sub r) = 2.33,62 mils thick) showed the worst match to theoretical impedance data. This is anticipated due to the fact that the cavity model generally loses accuracy when the dielectric substrate thickness exceeds 5% of the antenna's free space wavelength. A method of reducing computer execution time for impedance calculations is also presented.

Yalamanchili, Raj C.↗

Multimode Broad-Band Patch Antennas

Microstrip patch antennas of a proposed type would be tunable over broad wavelength ranges. These antennas would be attractive for use in a variety of microwave communication systems in which there are requirements for transmission and/or reception at multiple, widely separated frequencies. Prior efforts to construct tunable microstrip patch antennas have involved integration of microstrip circuitry with, variously, ferrite films with magneticfield tuning, solid-state electronic tuning devices, or piezoelectric tuning actuators. Those efforts have been somewhat successful, but have yielded tuning ranges of 20 percent and smaller much smaller than needed in typical practical cases. Like prior microstrip patch antennas (both tunable and non-tunable), the proposed antennas would have instantaneous bandwidths of about 1 percent of their nominal or resonance frequencies. However, these would be tunable over much broader frequency ranges as much as several octaves, depending on specific designs. They could be fabricated relatively simply and inexpensively by use of conventional photolithography, and without need for integration with solid-state electronic or piezoelectric control devices. An antenna as proposed (see figure) would include a microstrip patch radiating element on a thin ferroelectric film on a semiconductor substrate with a ground-plane conductor on the underside of the substrate. The ferroelectric film could be, for example, SrTiO3 with a thickness of the order of 1 or 2 micrometers.

Romanofsky, Robert R.↗

Considerations for millimeter wave printed antennas

Calculated data are presented on the performance of printed antenna elements on substrates which may be electrically thick, as would be the case for printed antennas at millimeter wave frequencies. Printed dipoles and microstrip patch antennas on polytetrafluoroethylene (PTFE), quartz, and gallium arsenide substrates are considered. Data are given for resonant length, resonant resistance, bandwidth, loss due to surface waves, loss due to dielectric heating, and mutual coupling. Also presented is an optimization procedure for maximizing or minimizing power launched into surface waves from a multielement printed antenna array. The data are calculated by a moment method solution.

Pozar, D. M.↗

Scattering from a microstrip patch

A solution to the problem of plane wave scattering by a rectangular microstrip patch on a grounded dielectric substrate is presented. The model does not include the microstrip feed, and thus doe not include the so-called 'antenna mode' component of the scattering. The solution begins by formulating an electric field integral equation for the surface current density on the microstrip patch. The integral equation is solved using the method of moments. Computed data for the patch radar cross section (RCS) is found to be in close agreement with measurements over a broad frequency range. The microstrip RCS versus frequency consists of a number of large peaks which are identified as impedance or pattern factor resonance peaks.

Newman, Edward H.↗

A 311-GHz Fundamental Oscillator Using InP HBT Technology

This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller amount of feedback than the common-emitter design, therefore preserving device gain, and was chosen for the oscillator design. The submillimeter-wave region offers several advantages for sensors and communication systems, such as high resolution and all-weather imaging due to the short-wavelength, and improved communication speeds by access to greater frequency bandwidth. This oscillator circuit is a prototype of the first HBT oscillator operating above 300 GHz. Additional development is necessary to increase the output power of the circuit for radar and imaging applications.

Gaier, Todd↗

Tunable Microwave Components for Ku- and K-Band Satellite Communications

The use of conductor/ferroelectric/dielectric thin film multilayer structures for frequency and phase agile components at frequencies at and above the Ku-band will be discussed. Among these components are edge coupled filters, microstripline ring resonators, and phase shifters. These structures were implemented using SrTiO3 (STO) ferroelectric thin films, with gold or YBa2Cu3O7-d (YBCO) high temperature superconducting (HTS) microstrip fines deposited by laser ablation on LaAlO3 (LAO) substrates. The performance of these structures in terms of tunability, operating temperature, frequency, and dc bias will be presented. Because of their small size, light weight, and low loss, these tunable microwave components are being studied very intensely at NASA as well as the commercial communication industry. An assessment of the progress made so far, and the issues yet to be solved for the successful integration of these components into the aforementioned communication systems will be presented.

Miranada, F. A.↗

Using Superconducting Thin Films in Microwave Lines

High temperature superconductors(HTS) and microwaves devices form the ideal partnership. The application of superconductors in microwave devices, components and systems allows the reduction in size, power consumption and insertion loss. The surface resistance of high-Tc superconductors has been found to be two orders of magnitude lower than normal conducting copper materials. The reduction in size and power requirements, which together both lead to a reduction in system mass, coupled with reasonably accessible operating temperatures, suggest that HTS microwave components should find ready application in satellite communications systems. At present, multi- channeling communication networks demand filters with narrow bandwidth in order to allow the available RF frequency spectrum to be partitioned into small frequency bands, -and possible variation of dielectric constant from substrate to substrate is undesirable. Microwave multiplexers demand the fabrication of two identical filters in each channel. Thus, the filter with tuning function is preferable. Tunable filters are the critical component for phased array antennas in order to electronically steer the radiated beam. To fabricate a tunable filter that uses an electric field for operation, one would like a material that provides a large change on dielectric constant for a given electric field, yet has a relatively low tangent in order to minimize the insertion loss of the device. Ferroelectrics have been the materials of choice. Their large dielectric constant sufficiently increases the coupling between microwave resonators and its dependence on electric field provides timability. Development of technology promises to diminish tangent loss. The use of thin ferroelectric films sufficiently decreases insertion losses keeping considerable potential for applications. NASA Lewis Research Center is the one of the leading centers in investigation of superconductors/ferroelectric tunable components for microwave devices. A large number of possible microwave devices were fabricated and tested on the basis of thin film multilayer superconductor-ferroelectric structures. In major cases the systems with edge-coupling scheme were investigated. Dr. Genkin has recently focused on the new potentialities which implements the using of thin ferroelectric films in filters fabricated with end-coupled microstrip lines. Numerical modeling shows that these systems have large potential for application in tunable narrow- and wide-bandpass filters in the frequency range 10-20 GHz. The phase shifter with end-coupled resonant sections was fabricated and tested. Experimental results show large tunability, particular in low voltages. The possible optimization of this structure promises to improve the obtained result and to reach the low level of insertion losses.

Genkin, Varery↗

Novel Micro Strip-to-Waveguide Feed Employing a Double-Y Junction

Previous micro strip -to -waveguide transitions either required a hermetically sealed waveguide configuration, or a balun that needed to be tuned according to the frequency band of interest. In this design, the balun is realized using a double -Y junction to transition from microstrip to coplanar strip feeding a quasi-Yagi dipole array (see figure). The length of the feed (Lf) extending into the waveguide is 15.54 mm. The length of the ground plane below the ULTRALAM substrate is 7.75 mm. The lengths L1 , L2, and L3 are 8.50 mm, 4.38 mm, and 2.14 mm, respectively. These lengths were computed via a preliminary optimization aimed at improving the return loss at the band edges. The waveguide feed was designed to excite the TE10 mode in a WR-90 waveguide, and to operate over the recommended frequencies of 8.2 to 12.4 GHz. The feed employs a Rogers 6010 substrate (dielectric constant Er approx. equals 10.2) bonded with a Rogers ULTRALAM substrate (Er approx. equals 2.5). The ULTRALAM substrate serves to provide mechanical strength for 6010 substrate, and to mitigate loses due to parasitic modes (the ground plane is etched on the bottom of this layer due to the topology of the double -Y balun). The double-Y balun transitioning from an unbalanced microstrip line to a balanced coplanar strip (CPS) line does not provide inherent impedance transformation; hence, Klopfenstein impedance tapers were synthesized to transition from 50 to 77 Ohms in the microstrip section and from 77 to 110 Ohms in the CPS section. At the balun junction, the CPS stub lengths were chosen such that the X/ 8 resonance is pushed outside the bandwidth of operation. Also, the smallest allowable conductor width and gap spacing were chosen to meet acceptable manufacturing tolerances.

Venkatesan, Jaikrishina↗

Measurement of Dielectric Loss in Silicon Nitride at Centimeter and Millimeter Wavelengths

This work presents a suite of measurement techniques for characterizing the dielectric loss tangent across a wide frequency range from similar to 1 GHz to 150 GHz using the same test chip. In the first method, we fit data from a microwave resonator at different temperatures to a model that captures the two-level system (TLS) response to extract and characterize both the real and imaginary components of the dielectric loss. The inverse of the internal quality factor is a second measure of the overall loss of the resonator, where TLS loss through the dielectric material is typically the dominant source. The third technique is a differential optical measurement at 150 GHz. The same antenna feeds two microstrip lines with different lengths that terminate in two microwave kinetic inductance detectors (MKIDs). The difference in the detector response is used to estimate the loss per unit length of the microstrip line. Our results suggest a larger loss for SiNx at 150 GHz of tan delta similar to 4 x 10(-3) compared to 2.0 x 10(-3) and greater than or similar to 1 x 10(-3) measured at similar to 1 GHz using the other two methods. These measurement techniques can be applied to other dielectrics by adjusting the microstrip lengths to provide enough optical efficiency contrast and other mm/sub-mm frequency ranges by tuning the antenna and feedhorn accordingly.

Dielectrics loss↗

High Performance Circularly Polarized Microstrip Antenna

A microstrip antenna for radiating circularly polarized electromagnetic waves comprising a cluster array of at least four microstrip radiator elements, each of which is provided with dual orthogonal coplanar feeds in phase quadrature relation achieved by connection to an asymmetric T-junction power divider impedance notched at resonance. The dual fed circularly polarized reference element is positioned with its axis at a 45 deg angle with respect to the unit cell axis. The other three dual fed elements in the unit cell are positioned and fed with a coplanar feed structure with sequential rotation and phasing to enhance the axial ratio and impedance matching performance over a wide bandwidth. The centers of the radiator elements are disposed at the corners of a square with each side of a length d in the range of 0.7 to 0.9 times the free space wavelength of the antenna radiation and the radiator elements reside in a square unit cell area of sides equal to 2d and thereby permit the array to be used as a phased array antenna for electronic scanning and is realizable in a high temperature superconducting thin film material for high efficiency.

Bondyopadhyay, Probir K.↗

On-chip Broadband Load Calibrators for Characterizing Transition-Edge Sensor Bolometers

We describe the design and fabrication of on-chip broadband load calibrators for element-by- element and full circuit characterization of transition-edge sensor (TES) bolometers for cosmic microwave background (CMB) polarimetry. Fabricated in a 4 X 4 grid on a 100 mm silicon wafer, the chips allow systematic testing of individual detector circuit elements without the need for an external blackbody source. This in-situ testing approach provides rapid and efficient characterization of various pixel designs in order to optimize the optical efficiency and control of systematic effects of the detectors. In this work, we demonstrate the on-chip calibrators on the Cosmology Large Angular Scale Surveyor (CLASS) W-band pixels. In particular, we investigate the loss on microstrip transmission lines and measure the performance of various designs of TESs, magic-tees, via-less crossovers, and signal terminations. We also test a filter-bank spectrometer with eight resonators spanning 80 – 105 GHz to characterize the spectral response of circuit elements across the detector bandwidth.

Sumit Dahal↗