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Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.
Experimental characteristics of monolithic InAlAs/InGaAs HEMT mixers are presented together with a theoretical analysis. Experiments at W-band show a maximum conversion gain of 0.9 dB with 2 dBm of LO power level. This is the first demonstration of a monolithic HEMT mixer with conversion gain at W-band. The conversion gain dependence on LO power, RF frequency and gate bias is measured and compared with the theoretical predictions. Good agreement between the theory and experiment could be found.
Monolithic optoelectronic integrated circuit converts multiplexed digital optical signals into electrical signals, separates, and distributes them to intended destinations. Developed to deliver phase and amplitude commands to monolithic microwave integrated circuits (MMIC's) at elements of millimeter-wave phased-array antenna from single optical fiber driven by external array controller. Also used in distribution of high-data-rate optical communications in local-area networks (LAN's). Notable features include options for optical or electrical clock inputs; outputs for raw data, addresses, and instructions for diagnosis; and optical-signal-detection circuit used to reduce power consumption by 80 percent between data-transmission times. Chip fabricated by processes available at many major semiconductor foundries. Distribution of digital signals in aircraft, automobiles, and ships potential application.
Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.
This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.
Ultrasonic velocity/time-of-flight imaging that uses back surface reflections to gauge volumetric material quality is highly suited for quantitative characterization of microstructural gradients including those due to pore fraction, density, fiber fraction, and chemical composition variations. However, a weakness of conventional pulse-echo ultrasonic velocity/time-of-flight imaging is that the image shows the effects of thickness as well as microstructural variations unless the part is uniformly thick. This limits this imaging method's usefulness in practical applications. Prior studies have described a pulse-echo time-of-flight-based ultrasonic imaging method that requires using a single transducer in combination with a reflector plate placed behind samples that eliminates the effect of thickness variation in the image. In those studies, this method was successful at isolating ultrasonic variations due to material microstructure in plate-like samples of silicon nitride, metal matrix composite, and polymer matrix composite. In this study, the method is engineered for inspection of more complex-shaped structures-those having (hollow) tubular/curved geometry. The experimental inspection technique and results are described as applied to (1) monolithic mullite ceramic and polymer matrix composite 'proof-of-concept' tubular structures that contain machined patches of various depths and (2) as-manufactured monolithic silicon nitride ceramic and silicon carbide/silicon carbide composite tubular structures that might be used in 'real world' applications.
The aqueous phase oxidation of acetic acid, used as a model compound for the treatment of CELSS (Controlled Ecological Life Support System) waste, was carried out in the monolith froth reactor which utilizes two-phase flow in the monolith channels. The catalytic oxidation of acetic acid was carried out over a Pt/Al2O3 catalyst at temperatures and pressures below the critical point of water. The effect of externally controllable parameters (temperature, liquid flow rate, distributor plate orifice size, pitch, and catalyst distance from the distributor plate) on the rate of acetic acid oxidation was investigated. Results indicate reaction rate increased with increasing temperature and exhibited a maximum with respect to liquid flow rate. The apparent activation energy calculated from reaction rate data was 99.7 kJ/mol. This value is similar to values reported for the oxidation of acetic acid in other systems and is comparable to intrinsic values calculated for oxidation reactions. The kinetic data were modeled using simple power law kinetics. The effect of "froth" feed system characteristics was also investigated. Results indicate that the reaction rate exhibits a maximum with respect to distributor plate orifice size, pitch, and catalyst distance from the distributor plate. Fundamental results obtained were used to extrapolate where the complete removal of acetic acid would be obtained and for the design and operation of a full scale CELSS treatment system.
The aqueous phase oxidation of acetic acid, used as a model compound for the treatment of CELSS (Controlled Ecological Life Support System) waste, was carried out in the monolith froth reactor which utilizes two-phase flow in the monolith channels. The catalytic oxidation of acetic acid was carried out over a Pt/Al2O3 catalyst, prepared at The University of Tulsa, at temperatures and pressures below the critical point of water. The effect of externally controllable parameters (temperature, liquid flow rate, distributor plate orifice size, pitch, and catalyst distance from the distributor plate) on the rate of acetic acid oxidation was investigated. Results indicate reaction rate increased with increasing temperature and exhibited a maximum with respect to liquid flow rate. The apparent activation energy calculated from reaction rate data was 99.7 kJ/mol. This value is similar to values reported for the oxidation of acetic acid in other systems and is comparable to intrinsic values calculated for oxidation reactions. The kinetic data were modeled using simple power law kinetics. The effect of "froth" feed system characteristics was also investigated. Results indicate that the reaction rate exhibits a maximum with respect to distributor plate orifice size, pitch, and catalyst distance from the distributor plate. Fundamental results obtained were used to extrapolate where the complete removal of acetic acid would be obtained and for the design and operation of a full scale CELSS treatment system.
A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.
A monolithic W-band three-stage Low Noise Amplifiers (LNA) based on 0.1 um pseudomorphic InAlAs/InGaAs/InP (High Electron Mobility Transistors (HEMTs) has been developed. this LNA demonstrated a noise figure of 4.3 dB and an associated small signal gain of 19 dB at 100 GHz with a low dc power consumption of 20 mW. This is the best reported monolithic W-band LNA performance using InP-based HEMT technology and demonstrates the potential of InP HEMT technology for higher millimeter-wave applications.
The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.
Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.
With recent increased industry and government interest in rocket grade hydrogen peroxide as a viable propellant, significant effort has been expended to improve on earlier developments. This effort has been predominately centered in improving heterogeneous. typically catalyst beds; and homogeneous catalysts, which are typically solutions of catalytic substances. Heterogeneous catalyst beds have traditionally consisted of compressed wire screens plated with a catalytic substance, usually silver, and were used m many RCS applications (X-1, Mercury, and Centaur for example). Aerojet has devised a heterogeneous catalyst design that is monolithic (single piece), extremely compact, and has pressure drops equal to or less than traditional screen beds. The design consists of a bonded stack of very thin, photoetched metal plates, silver coated. This design leads to a high surface area per unit volume and precise flow area, resulting in high, stable, and repeatable performance. Very high throughputs have been demonstrated with 90% hydrogen peroxide. (0.60 lbm/s/sq in at 1775-175 psia) with no flooding of the catalyst bed. Bed life of over 900 seconds has also been demonstrated at throughputs of 0.60 lbm/s/sq in across varying chamber pressures. The monolithic design also exhibits good starting performance, short break-in periods, and will easily scale to various sizes.
There is strong interest in the development of silicon carbide-based monolithic ceramic and composite materials and components for demanding, high-temperature applications. Thorough characterization of material properties, including high-temperature testing under simulated or actual operating conditions, is a high priority for programs involved in developing these silicon carbide- (SiC) based materials and components. Members of the Sensors and Electronics Technology Branch at the NASA Lewis Research Center are developing minimally intrusive methods of measuring the properties (such as the surface temperature, strain, and heat flux characteristics) of components and subelements that are being tested or operated in hostile, high-temperature environments. Their primary goal is to instrument the test article or operating component with durable sensors that have a minimal effect on test conditions such as the gas flow across the surface of the item and the material response (including the through-thickness conduction of heat). Therefore, the main thrust of their work has been the development of thin-film sensors (e.g., thermocouples or strain gauges) for use on various advanced material test articles, including SiC/SiC composite components. There was a need for a better method of securing sensor lead wires on SiC-based components and subelements that would be tested at temperatures to 1000 C (or higher), to enhance the durability of the overall minimally intrusive sensor system. To address this need, Lewis researchers devised an alternative approach for positioning the sensor lead wires (which are connected to the thin-film sensors) on SiC or SiC/SiC components. A reaction-forming method of joining was used to strongly bond hoop-shaped monolithic SiC and SiC/SiC composite attachments of various sizes to both flat and curved surfaces of SiC/SiC composite subelements (see the photos). This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed at Lewis for the joining of SiC-based ceramics and fiber-reinforced composites.
Solid oxide fuel cell systems used in the aerospace or commercial aviation environment require a compact, light-weight and highly durable catalytic fuel processor. The fuel processing method considered here is an autothermal reforming (ATR) step. The ATR converts Jet-A fuel by a reaction with steam and air forming hydrogen (H2) and carbon monoxide (CO) to be used for production of electrical power in the fuel cell. This paper addresses the first phase of an experimental catalyst screening study, looking at the relative effectiveness of several monolith catalyst types when operating with untreated Jet-A fuel. Six monolith catalyst materials were selected for preliminary evaluation and experimental bench-scale screening in a small 0.05 kWe micro-reactor test apparatus. These tests were conducted to assess relative catalyst performance under atmospheric pressure ATR conditions and processing Jet-A fuel at a steam-to-carbon ratio of 3.5, a value higher than anticipated to be run in an optimized system. The average reformer efficiencies for the six catalysts tested ranged from 75 to 83 percent at a constant gas-hourly space velocity of 12,000 hr 1. The corresponding hydrocarbon conversion efficiency varied from 86 to 95 percent during experiments run at reaction temperatures between 750 to 830 C. Based on the results of the short-duration 100 hr tests reported herein, two of the highest performing catalysts were selected for further evaluation in a follow-on 1000 hr life durability study in Phase II.
The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of approx.1 eV. For the last several years, research has been conducted by a number of organizations to develop approx.1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) approx.1- eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1- eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm2) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.
ATLAST-8 is an 8-meter monolithic UV/optical/NIR space observatory to be placed in orbit at Sun-Earth L2 by NASA's planned Ares V cargo launch vehicle. The ATLAST-8 will yield fundamental astronomical breakthroughs. The mission concept utilizes two enabling technologies: planned Ares-V launch vehicle (scheduled for 2019) and autonomous rendezvous and docking (AR&D). The unprecedented Ares-V payload and mass capacity enables the use of a massive, monolithic, thin-meniscus primary mirror - similar to a VLT or Subaru. Furthermore, it enables simple robust design rules to mitigate cost, schedule and performance risk. AR&D enables on-orbit servicing, extending mission life and enhancing science return.
We demonstrate an organic photovoltaic cell with a monolithic tandem structure in parallel connection. Transparent multiwalled carbon nanotube sheets are used as an interlayer anode electrode for this parallel tandem. The characteristics of front and back cells are measured independently. The short circuit current density of the parallel tandem cell is larger than the currents of each individual cell. The wavelength dependence of photocurrent for the parallel tandem cell shows the superposition spectrum of the two spectral sensitivities of the front and back cells. The monolithic three-electrode photovoltaic cell indeed operates as a parallel tandem with improved efficiency.