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Effect of Networking Density on the Patterning Performance of Molecular Layer Deposited Alucone Electron Beam/EUV Resists
One of the main barriers to continued device scaling in the era of extreme ultraviolet (EUV) lithography is the need for improved photoresist chemistries to address challenges such as poor EUV sensitivity, inadequate etch resistance, and pattern collapse. Metal-organic photoresists are a promising class of materials that can address many of these challenges, and among them, resists deposited via hybrid molecular layer deposition (MLD) have attracted interest for their unique advantages in thickness control, chemical homogeneity, and compatibility with vacuum processing. However, despite many successful demonstrations of patterning, little is known about how the molecular design of hybrid MLD resists affects their lithographic performance. In this work, we study the effect of the network structure, a common feature among all hybrid MLD resists, via a series of aluminum alkoxide ("alucone") negative tone resists with varying networking density. Their patterning mechanism is investigated via electron beam lithography (EBL)─a common proxy for EUV─and compared to their EUV-induced reactions studied via flood exposure and in situ characterization. In conclusion, we show that the resist with the least networking density demonstrates the best sensitivity and resolution, with the ability to resolve dense line/space gratings as small as 14 nm half pitch via EBL.
Photonic ring resonator notch filters for astronomical OH line suppression
Photonic ring resonator arrays used as notch filters are a promising novel solution to improve the signal-to-noise ratio of ground-based astronomical observations by suppressing OH emission lines in the near-infrared (NIR) wavelength range (0.9-2.5 μm). We aim to fabricate a series of ring resonators connected by a waveguide, each with its resonance wavelength and full-width-half-maximum (FWHM) matched with one of the OH emission lines. The fundamental structure of ring resonator-based notch filters is a ring resonator evanescently coupled to a waveguide. Due to the optical loss of the ring resonator, the transmission of light through the waveguide will be suppressed at the resonance wavelength of the ring resonator. The degree of suppression can be controlled by varying the coupling strength between the waveguide and the ring resonator, while the resonance wavelength can be controlled by the geometry and size of the ring. However, since a single ring resonator has multiple modes each with a different wavelength separated by its free spectral range (FSR), the additional suppression at other wavelengths may undermine the signal. Therefore, the ideal FSR off the ring resonators needs to be larger than the measurement window. For this application, we aim the FSR to be 1 larger than 30 nm . Our initial measurement results revealed two major challenges for this application. First, the FSR of the ring resonators is limited by the bending loss of ring resonators. In a standard 220 nm silicon-on-insulator material platform, the FSR of ring resonators cannot exceed 30 nm; Second, due to the wafer thickness variation and fabrication inaccuracy, the achievable accuracy in the resonance wavelength of a fabricated single ring resonator is only ~1.5 nm. In this work, we report our novel solutions to the above two challenges. For the first one, we have developed a novel structure based on the Vernier effect to greatly raise the FSR of ring resonators. Serially coupled Vernier ring structures is a typical approach to increase the FSR without encountering bending loss, but it requires restrictive matching of the coupling and optical loss of the rings and any imperfect matching can result in even noisier signals. On the contrary, our structure, as shown in shown in Fig. 1, does not require the restrictive matching. The signals of two output ports in our structure marked in Fig. 1 will be added together to form the final output signal, and Fig. 2 shows the finite-difference time-domain (FDTD) simulation results of the final output signal. As can be seen, the FSR of the entire structure is well-beyond 60 nm with little noise at other wavelengths. For the second one, we have developed an easy-to-implement method to permanently tune the resonance wavelengths of ring resonators within 0.1 nm accuracy. The tuning mechanism is based on the property of hydrogen silsesquioxane (HSQ) resist. As a negative tone electron beam resist, HSQ upon exposure will cross-link and eventually form SiO2. The refractive 2 index of HSQ resist and formed SiO2 are slightly different , enabling the tuning. By having a thin layer of HSQ resist on top of ring resonator structures followed by SiO2 cladding, the resonance wavelengths of ring resonators can be post-tuned Advances in Optical Astronomical Instrumentation 2019, edited by Simon Ellis, Céline d'Orgeville, Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 23 Sep 2020 Terms of Use: https://www.spiedigitallibrary.org/terms-of-use through electron beam exposure. We have found that, within 5 nm tuning range, the resonance wavelength shift and dosage applied obeys a linear relationship. So a simple calibration beforehand can result in resonance wavelength tuning within 0.1 nm accuracy. The transmission spectra of a 3-ring device before and after tuning is shown in Fig. 3.
Spontaneous Symmetry–Breaking of Nonequilibrium Steady–States Caused by Nonlinear Electrical Transport
Negative differential resistance (NDR) in certain materials has been attributed to spontaneous emergence of symmetry-breaking electrical current density localization from a previously homogeneous distribution, which is postulated to occur due to the nonequilibrium thermodynamic force of minimization of entropy production. However, this phenomenon has not been quantitatively predicted based on intrinsic material properties and an applied electrical stimulus. Herein an instability criterion is derived for localization of current density and temperature from a thermal fluctuation in a parallel conductor model of a thin film that is subject to Newton's law of cooling. The conditions for steady–state electro-thermal localization is predicted, verifying a decrease in entropy production upon localization. Electro-thermal localization accompanied by a decrease of entropy production is confirmed in a multiphysics simulation of current flow in a thin film. The instability criterion predicts conditions for spontaneous current density localization, relating symmetry breaking fundamentally to dynamical instability via Local Activity theory.
Electrically‐Driven Metal‐Insulator Transitions Emerging from Localizing Current Density and Temperature
Negative differential resistance (NDR) is a key electronic response enabling two‐terminal artificial neurons that can be achieved through different physical phenomena, including phase‐homogeneous current density and temperature (electro‐thermal) localizations and spatially‐localized metal‐insulator phase transitions (MITs). These two effects have been observed to occur sequentially in select electrically‐biased transition metal oxides. However, it is unknown why and under what conditions localizing behaviors precede MITs, particularly as a function of device length scale. To this end, the interplay between phase‐homogeneous electro‐thermal localizations and MITs is investigated in a 3D multiphysics simulation of a lateral thin film device, using the material properties of the prototype MIT material VO 2 . These findings demonstrate that the MIT is nucleated through dynamically localizing current density and temperature. A critical device width (≈0.7 µm in this study) is identified, below which both the electrically‐induced electro‐thermal and phase inhomogeneities cease to appear. It is demonstrated that the formation of spatial inhomogeneities directly relates to device dimensions, and demonstrate the decoupling of NDR from the MIT through device scaling relationships. These results provide insight into the material phenomena underlying the material's electrical responses, clarifying conditions under which spatial inhomogeneities form in electrically‐biased MIT materials.
Development of LpxH Inhibitors Chelating the Active Site Dimanganese Metal Cluster of LpxH
Abstract Despite the widespread emergence of multidrug‐resistant nosocomial Gram‐negative bacterial infections and the major public health threat it brings, no new class of antibiotics for Gram‐negative pathogens has been approved over the past five decades. Therefore, there is an urgent medical need for developing effective novel antibiotics against multidrug‐resistant Gram‐negative pathogens by targeting previously unexploited pathways in these bacteria. To fulfill this crucial need, we have been investigating a series of sulfonyl piperazine compounds targeting LpxH, a dimanganese‐containing UDP‐2,3‐diacylglucosamine hydrolase in the lipid A biosynthetic pathway, as novel antibiotics against clinically important Gram‐negative pathogens. Inspired by a detailed structural analysis of our previous LpxH inhibitors in complex with K. pneumoniae LpxH ( Kp LpxH), here we report the development and structural validation of the first‐in‐class sulfonyl piperazine LpxH inhibitors, JH‐LPH‐45 ( 8 ) and JH‐LPH‐50 ( 13 ), that achieve chelation of the active site dimanganese cluster of Kp LpxH. The chelation of the dimanganese cluster significantly improves the potency of JH‐LPH‐45 ( 8 ) and JH‐LPH‐50 ( 13 ). We expect that further optimization of these proof‐of‐concept dimanganese‐chelating LpxH inhibitors will ultimately lead to the development of more potent LpxH inhibitors for targeting multidrug‐resistant Gram‐negative pathogens.
Solutions Network Formulation Report. Using NASA Sensors to Perform Crop Type Assessment for Monitoring Insect Resistance in Corn
The EPA (U.S. Environmental Protection Agency) is tasked to monitor for insect pest resistance to transgenic crops. Several models have been developed to understand the resistance properties of insects. The Population Genetics Simulator model is used in the EPA PIRDSS (Pest Infestation and Resistance Decision Support System). The EPA Office of Pesticide Programs uses the DSS to help understand the potential for insect pest resistance development and the likelihood that insect pest resistance will negatively affect transgenic corn. Once the DSS identifies areas of concern, crews are deployed to collect insect pest samples, which are tested to identify whether they have developed resistance to the toxins in transgenic corn pesticides. In this candidate solution, VIIRS (Visible/Infrared Imager/Radiometer Suite) vegetation index products will be used to build hypertemporal layerstacks for crop type and phenology assessment. The current phenology attribute is determined by using the current time of year to index the expected growth stage of the crop. VIIRS might provide more accurate crop type assessment and also might give a better estimate on the crop growth stage.
Forest Structural Complexity and Biomass Predict First-Year Carbon Cycling Responses to Disturbance
The pre-disturbance vegetation characteristics that predict carbon (C) cycling responses to disturbance are not well known. To address this gap, we initiated the Forest Resilience Threshold Experiment, a manipulative study in which more than 3600 trees were stem girdled to achieve replicated factorial combinations of four levels (control, 45, 65, and 85% gross defoliation) of disturbance severity and two disturbance types (targeting upper or lower canopy strata). Applying a standardized stability framework in which initial C cycling resistance to disturbance was calculated as the first-year natural log response ratio of disturbance and control treatments, we investigated to what extent pre-disturbance levels of species diversity, aboveground woody biomass, leaf area index, and canopy rugosity—a measure of structural complexity—predict the initial responses of subcanopy light-saturated leaf CO 2 assimilation (A sat ), aboveground wood NPP (ANPP w ), and soil respiration (R s ) to phloem-disrupting disturbance. In the year following stem girdling, we found that above-ground C cycling processes, A sat and ANPP w , were highly resistant to increases in disturbance severity, while Rs resistance declined as severity increased. Disturbance type had no effect on first-year resistance. Pre-disturbance aboveground woody biomass, and canopy rugosity were positive predictors of ANPP w resistance and, conversely, negatively related to R s resistance. Subcanopy A sat resistance was not related to pre-disturbance vegetation characteristics. Stability of C uptake processes along with R s declines suggest the net C sink was sustained in the initial months following disturbance. Therefore, we conclude that biomass and complexity are significant, but not universal, predictors of initial C cycling resistance to disturbance. Moreover, our findings highlight the utility of standardized stability measures when comparing functional responses to disturbance.
Transverse barrier formation by electrical triggering of a metal-to-insulator transition
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.
Hydrodynamic and Ballistic Transport over Large Length Scales in GaAs/AlGaAs
We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs heterostructure. We evince the existence of collective transport phenomena in both regimes and demonstrate that negative nonlocal resistances and current vortices are not exclusive to only the hydrodynamic regime. Here, the combined experiments and simulations highlight the importance of device design, measurement schemes, and one-to-one modeling of experimental devices to demarcate various transport regimes.
Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films
Abstract Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration into filaments, volatile devices utilize a reversible phase change that returns to a ground state in the absence of applied stimulus. In these devices, Joule heating triggers the IMT and changes the bulk resistivity rather than influencing conduction through defects, as in previous studies. This volatile resistive switching behavior has previous been leveraged in niobium and vanadium oxides, but not in rare-earth nickelates, despite their tunable transition temperatures. This study demonstrates an electrically driven IMT in the prototypical rare-earth nickelate, NdNiO 3 , in large area devices. While previous work examining the electrically-driven IMT in NdNiO 3 suggests defect-dominated conduction, this study shows clear s-type negative differential resistance (NDR) consistent with temperature-dependent resistivity measurements. The NDR peak-to-valley voltage scales linearly with temperature as expected for conductivity pathways dominated by bulk IMT behavior. Unlike other transition metal oxides, which are modeled using the insulator-metal phase fraction as the internal state variable, a thermoelectric model with temperature as the internal state variable is found to more accurately describe the current–voltage characteristic of NdNiO 3 volatile memristors. Overall, we report the synthesis, fabrication, and characterization of NdNiO 3 volatile memristors with resistivity dominated by bulk-like IMT behavior which is scalable and not dependent upon oxygen vacancy migration or defect mediated conduction pathways.
In Situ Analysis of Electron-Induced Chemical Transformations in Vapor-Phase-Synthesized Al-Based Inorganic–Organic Hybrid Thin Films for EUV Resist Platform
The rapid advancement and stringent requirements of extreme ultraviolet (EUV) lithography technology necessitate the development of advanced photoresist systems for next-generation microelectronics. Recent studies have demonstrated that inorganic-based hybrid photoresists offer notable improvements in EUV sensitivity, etch resistance, and greater insusceptibility to pattern collapse compared to their purely organic counterparts. However, variations in the synthesis/coating approaches and chemistry of inorganic–organic photoresists can result in distinct exposure mechanisms. In this work, an Al-based hybrid thin film resist system synthesized via molecular (atomic) layer deposition (MLD or MALD) is explored, focusing on its electron-beam and EUV patterning mechanisms. The Al-based hybrid thin films are deposited using trimethylaluminum (TMA) and the organic precursor hydroquinone, exhibiting a saturated growth rate within the temperature range of 150–200°C. In diluted tetramethylammonium hydroxide (TMAH)-based developer solutions, the electron-irradiated Al-based hybrid thin film system behaves as a negative tone resist, achieving a sensitivity of 10.4 mC/cm 2 at 0.1 kV electron beam lithography (EBL). Chemical changes induced by electron exposure are also analyzed in this study using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and a unique infrared spectroscopy setup, revealing the potential cross-linking pathways. To further correlate the electron-induced chemical transformations with those mediated by EUV irradiations, a combination of X-ray photoemission electron microscopy/low-energy electron microscopy (XPEEM/LEEM) system is also employed. In conclusion, this study provides critical insights into the mechanisms underlying solubility switching and contributes to the design of advanced resist materials for EUV lithography.
Plasma rotation and diamagnetic drift effects on the resistive wall modes in the negative triangularity tokamaks
Abstract It was found previously that the negative triangularity (NT) configuration is more MHD-unstable for low n modes than the positive triangularity (PT) case, although the situation is reversed for intermediate n modes and the NT configuration becomes more stable for intermediate n modes ( n = 3 − 10 ) (Zheng et al 2021 Nucl. Fusion 61 116014). Here, n is the toroidal mode number. In this work, we extend the studies to include the rotation effects, as well as the diamagnetic drift effects, to see how the resistive wall modes (RWMs) in the NT configuration are affected as compared with the PT configuration. This is particularly motivated by noting that the wall interface with the plasma is quite different between the NT and PT configurations. It affects the plasma rotation and diamagnetic drift effects on the low n RWM. We consider the DIII-D-NT-experiment equilibrium reconstructed by the EFIT code. Based on the equilibrium g-file, the extended equilibria are constructed with the VMEC code by varying the beta values while keeping the pressure and poloidal current flux profiles basically unchanged. The bootstrap current contribution to the equilibria is taken into account with the Sauter formula. The MHD stability is then computed using the AEGIS code with the rotation and diamagnetic drift effects taken into account. We found that, although the NT configuration is less stable for n = 1 MHD modes, the rotation and diamagnetic drift stabilization effects on RWMs are more effective in the NT configuration than in the PT one. Note that even in the PT case, the stabilization of RWMs by the rotation and kinetic effects is critical. Because the low-n RWMs in the regular NT case are more unstable, the rotation and diamagnetic drift stabilization effects found in this research are important for the NT tokamak concept.
Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography
Extreme ultraviolet (EUV) lithography enables unprecedented resolution in semiconductor patterning but faces critical challenges in developing resist materials that achieve high-precision at economically viable throughput. Directed self-assembly (DSA) of block copolymers (BCPs) offers a promising solution for pattern rectification by leveraging thermodynamically determined domain structures to decouple BCP pattern quality from the imperfect original lithographic pattern. This prospective presents an overview of recent progress on the EUV + DSA strategy, covering advances in BCP material design, processing, metrology, and pattern transfer. We highlight recent advances in high-χ BCPs with perpendicular orientation and domain spacings compatible with EUV dimensions, leveraging A-b-(B-r-C) architectures. We also discuss progress in chemical pre-pattern fabrication using both positive- and negative tone resists, along with processing strategies to minimize defects and roughness based on BCP thermodynamics and assembly kinetics. We further examine metrology platforms for characterizing the thermodynamics of BCP materials and quantifying the size and shape of BCP domains. Lastly, we review pattern transfer strategies for generating functional inorganic masks suitable for semiconductor manufacturing. Together, these advances highlight the potential of DSA to complement EUV lithography, offering a pathway to address critical challenges in achieving high-precision patterning for the semiconductor industry.
Reduced Stochastic Resistive Switching in Organic-Inorganic Hybrid Memristors by Vapor-Phase Infiltration
We report resistive random-access memory (RRAM) is promising for next-generation data storage and non-von Neumann computing hardware. However, tuning device switching characteristics and particularly, controlling their stochastic variation remain as critical challenges. Here, new organic-inorganic hybrid RRAM media are reported whose bipolar switching characteristics and stochasticity can be controlled by vapor-phase infiltration (VPI), an ex situ hybridization technique derived from atomic layer deposition. Hybrid RRAMs based on AlO x -infiltrated SU-8 feature facile tunability of device switching voltages, off-state current, and on-off ratio by adjusting the amount of infiltrated AlO x in the hybrid. Furthermore, a significant reduction in the stochastic, cycle-to-cycle variations of switching parameters is enabled by AlO x infiltration, driven by the infiltration-induced changes in mechanical, dielectric, and chemical properties of organic medium and their influence on the dimension and formation characteristics of conductive filaments. Finally, multi-level analog switching potentially useful for neuromorphic applications are demonstrated, along with direct, one-step device patterning exploiting the negative-tone resist feature of SU-8. With the demonstrated control over switching characteristics and stochastic variation, combined with analog switching and one-step patterning capabilities, the results not only present a novel hybrid medium for RRAM applications but also showcase the utility of VPI for developing new, high-performance hybrid RRAM devices.
Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series
Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.
Lightning radiometry in visible and infrared bands
Calibrated measurements of lightning optical emissions are critical for both quantifying the impacts of lightning in our atmosphere and devising detection instruments with sufficient dynamic range capable of yielding close to 100% detection efficiency. However, to date, there is only a limited number of investigations that have attempted to take such calibrated measurements. Here, in this work, we report the power radiated by lightning in both visible and infrared bands, assuming isotropic emission, and accounting for atmospheric absorption. More precisely, we report peak radiated power and total radiated energy in the combined visible plus near-infrared range (VNIR, 0.34–1.1 μm), around the H α line (652–667 nm), and for the 2–2.5 μm infrared band. The estimated peak power and total energy radiated by negative cloud-to-ground return strokes in the VNIR range is 130 MW and 20 kJ, respectively. Additionally, we detected peak radiated powers of 12 and 0.19 MW in the H α and infrared bands, respectively. We cross-reference the optical data set with peak current reported by a lightning detection network. The resulting trend is that optical power emitted around the H α line scales with peak return stroke current according to a power law with exponent equal to 1.25. This trend, which should be approximately true across the entire visible spectrum, can be attributed to the plasma negative differential resistance of the lightning return stroke channel. We conclude by discussing the challenges in performing calibrated measurements of lightning optical power in different bands and comparing the results with previously-collected data with different experimental setups, observation conditions, and calibration methods.
Molecular characterization of the outer membrane of Pseudomonas aeruginosa
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