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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.↗
NASA NTRS1992

Josephson effect gain and noise in SIS mixers

Superconducting tunnel diode (SIS) mixers are used for radio astronomy from 100 to 500 GHz. They are being considered for NASA spaceborne astronomy at frequencies near 1000 GHz. Measurements of gain and noise in SIS mixers at 230 and 492 GHz are reported. Relatively high gain and noise associated with Josephson currents are measured that have not been previously reported. These measurements show that Josephson currents are increasingly important as operating frequencies are raised. The techniques used to make these measurements are discussed. Measurements made with hot and cold black-bodies are shown to be inaccurate at high frequencies.

Wengler, Michael J.↗
NASA NTRS1977

Detection of upper atmospheric constituents using submillimeter wave /SMMW/ heterodyne radiometry

Submillimeter wave heterodyne radiometry has been applied to the detection and sounding of upper atmospheric constituents. The use of room-temperature Schottky-diode mixers for the receivers has yielded measurements of 70,000 K noise temperature. Coupling losses into the diode and matching of the IF output limit are observed to limit noise temperature. The technique is evaluated by calculating spectra with assumed temperature and constituent profiles. Vertical integrations are made with a multilayer atmosphere and the direct summation of absorption coefficients for the individual spectral lines is used. Results are presented for tangent path parameters for a mid-latitude summer model and the fractional parts of upper atmospheric constituents as a function of altitude.

Mcavoy, N.↗
NASA NTRS1980

Tunable diode laser heterodyne radiometer measurement of atmospheric absorption of solar radiation

A tunable infrared heterodyne radiometer (TIHR) which uses a diode laser as the local oscillator is described as well as methods for the evaluation of the excess noise characteristics of the tunable diode laser. Preliminary atmospheric absorption data taken with the TIHR are presented and show the capability of the TIHR for making the highest resolution atmospheric measurements to date.

Harward, C. N.↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1973

Methods of measurement for semiconductor materials, process control, and devices

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1987

Optical communication with semiconductor laser diodes

A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

Davidson, F.↗
NASA NTRS2006

Cryogenic Pound Circuits for Cryogenic Sapphire Oscillators

Two modern cryogenic variants of the Pound circuit have been devised to increase the frequency stability of microwave oscillators that include cryogenic sapphire-filled cavity resonators. The original Pound circuit is a microwave frequency discriminator that provides feedback to stabilize a voltage-controlled microwave oscillator with respect to an associated cavity resonator. In the present cryogenic Pound circuits, the active microwave devices are implemented by use of state-of-the-art commercially available tunnel diodes that exhibit low flicker noise (required for high frequency stability) and function well at low temperatures and at frequencies up to several tens of gigahertz. While tunnel diodes are inherently operable as amplitude detectors and amplitude modulators, they cannot, by themselves, induce significant phase modulation. Therefore, each of the present cryogenic Pound circuits includes passive circuitry that transforms the AM into the required PM. Each circuit also contains an AM detector that is used to sample the microwave signal at the input terminal of the high-Q resonator for the purpose of verifying the desired AM null at this point. Finally, each circuit contains a Pound signal detector that puts out a signal, at the modulation frequency, having an amplitude proportional to the frequency error in the input signal. High frequency stability is obtained by processing this output signal into feedback to a voltage-controlled oscillator to continuously correct the frequency error in the input signal.

Dick, G. John↗
NASA NTRS1992

New approach to the design of Schottky barrier diodes for THz mixers

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

Jelenski, A.↗
NASA NTRS1986

Near millimeter wave imaging/multi-beam integrated antennas

Some preliminary results on a mixer design which is suitable for integration with tapered slot antennas have been obtained and published. This mixer design was tested both in a 4 to 10 GHz model, and (slightly modified) at 94 GHz. The latter utilized the same Hewlett-Packard beam-lead diodes which were used as detector diodes in the linearly tapered slot antennas (LTSA) arrays. These diodes are the most rugged to be found, and generally survive well on the flexible Kapton substrates. The 4 to 10 GHz version of this mixer has less than 6 dB conversion loss over an octave bandwidth. It uses a slot ring in a balanced configuration, and requires the LO to be fed through a separate port. A different design for a mixer which may be integrated with an LTSA antenna element is discussed. This mixer was tested at 38 GHz with the same HP beam-lead diodes, and has less than 10 dB conversion loss. Further work on mixers has emphasized theoretical modeling, using a computer program, which takes into account the effect of excess noise of Schottky-barrier diodes for the first time. Calculated results agree quantitatively with measured results on millimeter wave mixers.

Yngvesson, K. Sigfrid↗
NASA NTRS1990

Demonstration of a low bandwidth 1.06-micron optical phase-locked loop for coherent homodyne communication

A type II 1.06-micron optical phase-locked loop (OPLL) for use in a coherent homodyne receiver is discussed. Diode-laser-pumped solid-state lasers are used for both the local oscillator and transmitter, because their phase noise is significantly lower than that of diode lasers. Closed-loop RMS phase noise of less than 12 mrad (0.69 deg) is achieved, and modulation-demodulation in bulk modulators at rates from 20 kHz to 20 MHz with less than 19 deg of modulation depth is demonstrated.

Day, T.↗
NASA NTRS2012

Laser Development for Gravitational-Wave Interferometry in Space

We are reporting on our development work on laser (master oscillator) and optical amplifier systems for gravitational-wave interferometry in space. Our system is based on the mature, wave-guided optics technologies, which have advantages over bulk, crystal-based, free-space optics. We are investing in a new type of compact, low-noise master oscillator, called the planar-waveguide external cavity diode laser. We made measurements, including those of noise, and performed space-qualification tests.

Numata, Kenji↗
NASA NTRS1981

Proton-induced noise in digicons

The Space Telescope, which carries four Digicons, will pass several times per day through a low-altitude portion of the radiation belt called the South Atlantic Anomaly. This is expected to create interference in what is otherwise anticipated to be a noise-free device. Two essential components of the Digicon, the semiconductor diode array and the UV transmitting window, generate noise when subjected to medium-energy proton radiation, a primary component of the belt. These trapped protons, having energies ranging from 2 to 400 Mev and fluences at the Digicon up to 4,000 P+/sec-sq cm, pass through both the window and the diode array, depositing energy in each. In order to evaluate the effect of these protons, engineering test models of Digicon tubes to be flown on the High Resolution Spectrograph were irradiated with low-flux monoenergetic proton beams at the University of Maryland cyclotron. Electron-hole pairs produced by the protons passing through the diodes or the surrounding bulk caused a background count rate. This is the result of holes diffusing over a distance of many diode spacings, causing counts to be triggered simultaneously in the output circuits of several adjacent diodes. Pulse-height spectra of these proton-induced counts indicate that most of the bulk-related counts overlap the single photoelectron peak. A geometrical model will be presented of the charge collection characteristics of the diode array that accounts for most of the observed effects.

Smith, L. C.↗
NASA NTRS1986

Ultrasensitive detection of atmospheric trace gases using frequency modulation spectroscopy

Frequency modulation (FM) spectroscopy is a new technique that promises to significantly extend the state-of-the-art in point detection of atmospheric trace gases. FM spectroscopy is essentially a balanced bridge optical heterodyne approach in which a small optical absorption or dispersion from an atomic or molecular species of interest generates an easily detected radio frequency (RF) signal. This signal can be monitored using standard RF signal processing techniques and is, in principle, limited only by the shot noise generated in the photodetector by the laser source employed. The use of very high modulation frequencies which exceed the spectral width of the probed absorption line distinguishes this technique from the well-known derivative spectroscopy which makes use of low (kHz) modulation frequencies. FM spectroscopy was recently extended to the 10 micron infrared (IR) spectral region where numerous polyatomic molecules exhibit characteristic vibrational-rotational bands. In conjunction with tunable semiconductor diode lasers, the quantum-noise-limited sensitivity of the technique should allow for the detection of absorptions as small as .00000001 in the IR spectral region. This sensitivity would allow for the detection of H2O2 at concentrations as low as 1 pptv with an integration time of 10 seconds.

Cooper, David E.↗
NASA NTRS2005

Planar diode multiplier chains for THz spectroscopy

High-resolution laboratory spectroscopy is utilized as a diagnostic tool to determine noise and harmonic content of balanced [9]-[11] and unbalanced [12]-[14] multiplier designs. Balanced multiplier designs suppress unintended harmonics more than -20dB. Much smaller values were measured on unbalanced multipliers.

high-resolution spectroscopy↗