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At least 91 records · Page 5

Phase Calibration of Antenna Arrays Aimed at Spacecraft

A document describes a method of calibrating phase differences among ground antennas in an array so that the maximum-intensity direction of the far-field interference pattern of the array coincides with the direction for aiming the antennas to enable radio communication with a distant spacecraft. The method pertains to an array typically comprising between two and four 34-m (or similar size) antennas. The antennas are first calibrated pair-wise to maximize the uplink power received at a different spacecraft that is close enough for communication via a single ground antenna. In the calibration procedure, the phase of the signal transmitted by one of the antennas is ramped through a complete cycle, thereby causing the interference pattern to sweep over this closer spacecraft and guaranteeing that, at some point during the sweep, this spacecraft is illuminated at maximum intensity. The varying received uplink power is measured by a receiver in the closer spacecraft and the measurement data are transmitted to a ground station to enable determination of the optimum phase adjustment for the direction to the closer spacecraft. This adjustment is then translated to the look direction of the distant spacecraft, which could not be reached effectively using only one antenna.

Vilnrotter, Victor↗

Analysis of finite phased arrays of circular microstrip patches

A method is presented for analyzing a finite planar array of circular microstrip patches fed by coaxial probes. The self- and mutual impedances between array elements are calculated using the method of moments with the dyadic Green's function for a dielectric layer on a ground plane. The patch circuits are determined by using the reaction integral equation. The active input impedance as well as the active element pattern of the array are computed from a knowledge of the resultant patch currents. The calculated results for two-element and eight-element linear arrays are in good agreement with experimental data. The active reflection coefficient and element pattern for the center and edge elements of a two-dimensional array as a function of scan angle are also presented.

Deshpande, Manohar D.↗

Report for simultaneous, multiple independently steered beam study for Airborne Electronically Steerable Phased Array (AESPA) program

Design concepts of an array for the formation of multiple, simultaneous, independently pointed beams for satellite communication links were investigated through tradeoffs of various approaches which were conceived as possible solutions to the problem. After the preferred approach was selected, a more detailed design was configured and is presented as a candidate system that should be given further consideration for development leading to a preliminary design. This array uses an attenuator and a phase shifter with every element. The aperture excitation necessary to form the four beams is calculated and then placed across the array using these devices. Pattern analysis was performed for two beam and four beam cases with numerous patterns being presented. Parameter evaluation shown includes pointing accuracy and beam shape, sidelobe characteristics, gain control, and beam normalization. It was demonstrated that a 4 bit phase shifter and a 6 bit, 30 dB attenuator were sufficient to achieve adequate pattern performances. The phase amplitude steered multibeam array offers the flexibility of 1 to 4 beams with an increase in gain of 6 dB if only one beam is selected.

Source record↗

Quasi-optical antenna-mixer-array design for terahertz frequencies

A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

Guo, Yong↗

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗

Submillimeter-wave antennas on thin membranes

Submillimeter-wave antennas have been fabricated on 1-micron thick silicon-oxynitride membranes. This approach results in better patterns than previous lens-coupled antennas, and eliminates the dielectric loss associated with the substrate lens. Measurements on a wideband log-periodic antenna at 700 GHz, 370 GHz and 167 GHz show no sidelobes and 3-dB beamwidths between 40 and 60 deg. A linear imaging array has similar patterns at 700 GHz. Possible applications for membrane antennas include wideband superconducting tunnel-junction receivers for radio astronomy and imaging arrays for radiometry and plasma diagnostics.

Rebeiz, Gabriel M.↗

Infrared-Bolometer Arrays with Reflective Backshorts

Integrated circuits that incorporate square arrays of superconducting-transition- edge bolometers with optically reflective backshorts are being developed for use in image sensors in the spectral range from far infrared to millimeter wavelengths. To maximize the optical efficiency (and, thus, sensitivity) of such a sensor at a specific wavelength, resonant optical structures are created by placing the backshorts at a quarter wavelength behind the bolometer plane. The bolometer and backshort arrays are fabricated separately, then integrated to form a single unit denoted a backshort-under-grid (BUG) bolometer array. In a subsequent fabrication step, the BUG bolometer array is connected, by use of single-sided indium bump bonding, to a readout device that comprises mostly a superconducting quantum interference device (SQUID) multiplexer circuit. The resulting sensor unit comprising the BUG bolometer array and the readout device is operated at a temperature below 1 K. The concept of increasing optical efficiency by use of backshorts at a quarter wavelength behind the bolometers is not new. Instead, the novelty of the present development lies mainly in several features of the design of the BUG bolometer array and the fabrication sequence used to implement the design. Prior to joining with the backshort array, the bolometer array comprises, more specifically, a square grid of free-standing molybdenum/gold superconducting-transition-edge bolometer elements on a 1.4- m-thick top layer of silicon that is part of a silicon support frame made from a silicon-on-insulator wafer. The backshort array is fabricated separately as a frame structure that includes support beams and contains a correspond - ing grid of optically reflective patches on a single-crystal silicon substrate. The process used to fabricate the bolometer array includes standard patterning and etching steps that result in the formation of deep notches in the silicon support frame. These notches are designed to interlock with the support beams on the backshort-array structure to provide structural support and precise relative positioning. The backshort-array structure is inserted in the silicon support frame behind the bolometer array, and the notches in the frame serve to receive the support beams of the backshort-array structure and thus determine the distance between the backshort and bolometer planes. The depth of the notches and, thus, the distance between the backshort and bolometer planes, can be tailored to a value between 25 to 300 m adjusting only a few process steps. The backshort array is designed so as not to interfere with the placement of indium bumps for subsequent indium bump-bonding to the multiplexing readout circuitry

Miller, Timothy M.↗

CdZnTe Image Detectors for Hard-X-Ray Telescopes

Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

Chen, C. M. Hubert↗

Simulation of an array-based neural net model

Research in cognitive science suggests that much of cognition involves the rapid manipulation of complex data structures. However, it is very unclear how this could be realized in neural networks or connectionist systems. A core question is: how could the interconnectivity of items in an abstract-level data structure be neurally encoded? The answer appeals mainly to positional relationships between activity patterns within neural arrays, rather than directly to neural connections in the traditional way. The new method was initially devised to account for abstract symbolic data structures, but it also supports cognitively useful spatial analogue, image-like representations. As the neural model is based on massive, uniform, parallel computations over 2D arrays, the massively parallel processor is a convenient tool for simulation work, although there are complications in using the machine to the fullest advantage. An MPP Pascal simulation program for a small pilot version of the model is running.

Barnden, John A.↗

Tomographical imaging using uniformly redundant arrays

An investigation is conducted of the behavior of two types of uniformly redundant array (URA) when used for close-up imaging. One URA pattern is a quadratic residue array whose characteristics for imaging planar sources have been simulated by Fenimore and Cannon (1978), while the second is based on m sequences that have been simulated by Gunson and Polychronopulos (1976) and by MacWilliams and Sloan (1976). Close-up imaging is necessary in order to obtain depth information for tomographical purposes. The properties of the two URA patterns are compared with a random array of equal open area. The goal considered in the investigation is to determine if a URA pattern exists which has the desirable defocus properties of the random array while maintaining artifact-free image properties for in-focus objects.

Cannon, T. M.↗

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

Most SiC devices are implemented in homoepitaxial films grown on 4H/6H-SiC wafers with surfaces 3 degrees to 8 degrees off-axis from the (0001) basal plane. This approach has not prevented many substrate crystal defects from propagating into SiC epilayers, and does not permit the realization of SiC heteropolytype devices. This presentation describes recent advances in SiC epitaxial growth that begun to overcome the above shortcomings for arrays of mesas patterned into on-axis 4H/6H-SiC wafers. First, we demonstrated that atomic-scale surface steps can be completely eliminated from 4H/6H-SiC mesas via on-axis homoepitaxial step-flow growth, forming (0001) basal plane surfaces (up to 0.4 mm x 0.4 mm) for larger than previously thought possible. Step-free surface areas were then extended by growth fo thin lateral cantilevers from the mesa tops. These lateral cantilevers enabled substrate defects to be reduced and relocated in homoepitaxial films in a manner not possible with off-axis SiC growth. Finally, growth of vastly improved 3C-SiC heterofilms was achieved on 4H/6H-SiC mesas using the recently develop step-free surface heteroepitaxy process. These epitaxial growth developments should enable improved homojunction and heterojunction silicon carbide prototype devices.

Neudeck, Philip G.↗

Hybrid Infrared Imager

Experimental device has low noise and high uniformity. Infrared imaging device combines array of InSb photodetectors with array of silicon field-effect-transistor switches. InSb chip forms roof over Si chip, each InSb detector cell engaging indium bump on corresponding Si switch cell below it. FET switches in 128-by-128 array turn on in sequence, read out charges on 128-by-128 array of photodetectors and multiplex them in serial output that represents pattern of light on array of photodetectors. Useful in sensitive infrared cameras for astronomy, medicine, inspection, and military surveillance. Reads out image data at rates up to 10 MHz and expands to 256-by-256 array.

Bailey, Gary C.↗

Recent advances in antenna synthesis.

A technique for the synthesis of planar aperture antennas has been developed. It applies equally well to continuous or array type apertures. Patterns with shaped main beams and complex sidelobe structures can be synthesized. The method involves applying corrections iteratively and converging toward the desired pattern. The iteration process terminates when the synthesized pattern approximates the desired pattern to within a specified tolerance. A computer program has been written to perform all calculations. The source distribution which is required to produce the synthesized pattern is provided as output. The method is such that patterns requiring complex source distributions will not be synthesized (such as superdirective patterns).

Stutzman, W. L.↗

Satellite antenna technology. Citations from the International Aerospace Abstracts data base

This bibliography of citations to articles from the international literature concerns satellite antenna technology. Topics stressed are antenna design studies dealing with antenna radiation patterns and antenna arrays. This bibliography excludes articles cited in the published searches titled Communications Satellite Technology. The bibliography contains 213 citations.

Zollars, G. F.↗

Optical control of an 8-element Ka-band phased array using a high-speed optoelectronic interconnect

Optical distribution of control signals in electronically steered phased array antennas is being considered. A demonstration experiment is described in which a high speed hybrid GaAs optoelectronic integrated circuit (OEIC) was used to control an eight element phased array antenna. The OEIC, which accepts a serial optical control signal as input and converts it to 16 demultiplexed parallel outputs, was used to control the monolithic GaAs phase shifters of a Ka-band patch panel array antenna. Antenna pattern switching speeds of 2.25 microsec, limited by interface circuitry, were observed.

Richard, M. A.↗

Distributed memory compiler design for sparse problems

A compiler and runtime support mechanism is described and demonstrated. The methods presented are capable of solving a wide range of sparse and unstructured problems in scientific computing. The compiler takes as input a FORTRAN 77 program enhanced with specifications for distributing data, and the compiler outputs a message passing program that runs on a distributed memory computer. The runtime support for this compiler is a library of primitives designed to efficiently support irregular patterns of distributed array accesses and irregular distributed array partitions. A variety of Intel iPSC/860 performance results obtained through the use of this compiler are presented.

Wu, Janet↗