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High-power single-mode channeled-substrate planar AlGaAs diode lasers are being developed for reliable high-power operation for use as sources in spaceborne optical communication systems. The CSP laser structure has been optimized for operation at an emission wavelength of 870 nm. Such devices have exhibited output powers in excess of 80 mW CW at an operating temperature of 80 C.
Two reports present further detailed information about odd-harmonic frequency-multiplier devices described in "Barrier/n/n+ Varactor Frequency Multipliers" (NPO-18428). Devices comprise Schottky-barrier/n/n+ diodes in planar back-to-back configuration.
The FIRST/HIFI mission allows for the local oscillator frequency multiplier chains to be cooled to 120 - 150 K in order to increase available output power. This paper will discuss the implication of cooling on GaAs based planar Schottky diode varactors for flight applications.
A tunerless 1.2 THz waveguide frequency tripler using Schottky planar varactor diodes has been designed, fabricated and tested.
Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.
We report on the design and performance of a broad-band, high-power 540-640-GHz fix-tuned balanced frequency tripler chip that utilizes four planar Schottky anodes. The suspended strip-line circuit is fabricated with a 12-micron-thick support frame and is mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise RF grounding. At room temperature, the tripler delivers 0.9-1.8 mW across the band with an estimated efficiency of 4.5%-9%. When cooled to 120 K, the tripler provides 2.0-4.2 mW across the band with an estimated efficiency of 8%-12%.
We report on the design and performance of a novel broadband, biased, subharmonic 520-590 GHz fix-tuned frequency mixer that utilizes planar Schottky diodes. The suspended stripline circuit is fabricated on a GaAs membrane mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise radio frequency (RF) grounding, RF coupling and dc/intermediate frequency connections. At room temperature, the mixer has a measured double sideband noise temperature of 3000 to 4000 K across the design band.
Planar Schottky diode technology has been utilized to fabricate high-power broad-band monolithic multiplier circuits that can produce appreciable power well into the THz range. The chip fabrication technology that has been developed allows for robust circuit designs that can be easily packaged in conventional waveguide blocks. An overview of the capability of GaAs based Schottky diode multipliers will be presented.
We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bow-tie antennas as a unit cell each loaded with a planar Schottky diode.
Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.
A microwave integrated circuit active receiver is built and tested at 19-25 GHz. The receiver consists of a planar CPW-fed double folded-slot antenna coupled to a six-stage MESFET (metal semiconductor field effect transistors) amplifier and followed by a planar Schottky-diode detector. The folded-slot antenna on a GaAs half-space results in a wide frequency bandwidth suitable for MMIC amplifiers. The measured system performance show a video responsivity close to 1 GV/W at 20 GHz with a 3-dB bandwidth of 1500 MHz. A novel method which uses the planar video detector after the amplifier stages as an RF (radio frequency) mixer is used to measure the noise-figure of the direct detection radiometer. The system noise figure is 4.8 dB at 22 GHz. The radiometer sensitivity to a hot/cold load is 3.8 mu V/K. The measured antenna patterns show a 90% Gaussicity at 20-22 GHz. The active MIC receiver can be integrated monolithically for low-cost applications and is well suited for millimeter-wave linear imaging arrays.
Index-guided channeled-substrate-planar (CSP) AlGaAs diode lasers are being developed for reliable, high-power operation for use as sources in spaceborne optical communications systems. Although most work on this AlGaAs structure has been aimed at optimizing performance at output wavelengths less than 8400 A, emission in the 8700 A regime is also of interest. In particular, such wavelengths are required for use in the direct detection laser transceiver to be incorporated into NASA's advanced communications technology satellite, in order to avoid absorption of the light by the atmosphere when communicating with ground-based terminals. Lowest order spatial mode and substantially single longitudinal mode output has been observed in 0.87-micron CSP devices in excess of 50 mW cw and 100 mW 50 percent duty-cycle, with rms phase-front aberrations measured to be about lambda/40.
An integrated planar receiver was developed and tested over the 82-112 GHz bandwidth. The quasi-integrated antenna used in the receiver has a high gain, a high Gaussian coupling efficiency, and a wide bandwidth. The novel mixer design consists of a planar GaAs Schottky diode placed at the feed of a dipole-probe suspended inside an integrated horn antenna. The diode uses an etched surface channel and a planar air bridge for reduced parasitic capacitance. At 92 GHz, the room-temperature antenna-mixer exhibits a double sideband conversion loss and noise temperature of 5.5 +/- 0.5 dB and 770 K +/- 50 K, respectively. The measured DSB conversion loss and noise temperature over a 20 GHz bandwidth (86 GHz-106 GHz) remain less than 6.2 dB +/- 0.5 dB and 1000 K +/- 50 K, respectively. The low cost of fabrication and simplicity of the design makes it ideal for millimeter- and submillimeter-wave receivers.
A tunable folded slot antenna that utilizes varactor diodes is presented. The antenna is fabricated on Rogers 6006 Duriod with a dielectric constant and thickness of 6.15 and 635 m, respectively. A copper cladding layer of 17 m defines the antenna on the top side (no ground on backside). The antenna is fed with a CPW 50 (Omega) feed line, has a center frequency of 3 GHz, and incorporates Micrometrics microwave hyper-abrupt 500MHV varactors to tune the resonant frequency. The varactors have a capacitance range of 2.52 pF at 0 V to 0.4 pF at 20 V; they are placed across the radiating slot of the antenna. The tunable 10 dB bandwidth of the 3 GHz antenna is 150 MHz. The varactors also reduce the size of the antenna by 30% by capacitively loading the resonating slot line. At the center frequency, 3 GHz, the antenna has a measured return loss of 44 dB and a gain of 1.6 dBi. Full-wave electromagnetic simulations using HFSS are presented that validate the measured data. Index Terms capacitive loading, Duriod, folded slot antenna, varactor.
Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.
A receiver belonging to the family of integrated planar receivers has been developed at 90 GHz. It consists of a planar Schottky-diode placed at the feed of a dipole-probe suspended inside an integrated horn antenna. The measured planar mixer single-sideband conversion loss at 91.2 GHz (LO) with a 200 MHz IF frequency is 8.3dB plus or minus 0.3dB. The low cost of fabrication and simplicity of this design makes it ideal for millimeter and submillimeter-wave receivers.
A novel technique has been developed to produce n(+) 'pockets' in semiinsulating GaAs bulk material. This technique has produced thick pockets of highly conducting epitaxial material on the substrate surface. The pockets were formed by the growth of a liquid-phase epitaxial (LPE) layer into holes which had been etched into the substrate. Surface uniformity was obtained by chemo-mechanically polishing the substrate surface under tightly controlled conditions. Polishing rates as low as 0.2 micron/min have been obtained. Photographs taken of the pocket cross-sectional area have revealed that growth occurred throughout the entire pocket region. Growth was even found to have occurred along the irregularly shape walls of the packets. The continuous growth throughout the pockets coupled with the subsequent polishing of the substrate have produced exceptionally smooth and planar surfaces. Thicknesses as great as 10 microns have been obtained for the n(+) pockets using this technique. Mixer diodes have been fabricated onto these layers and tested. Preliminary dc measurements taken on these devices have yielded a zero-biased cutoff frequency (Fco) of 800 GHz with a series resistance (Rs) of 6 omega and a zero-biased capacitance (Co) of 30 fF.
GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.