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At least 91 records · Page 5

Can Machine Learning Reveal Precursors of Reversals of the Geomagnetic Axial Dipole Field?

It is well known that the axial dipole part of Earth’s magnetic field reverses polarity, so that the magnetic North Pole becomes the South Pole and vice versa. The timing of reversals is well documented for the past 160 Myr, but the conditions that lead to a reversal are still not well understood. It is not known if there are reliable ‘precursors’ of reversals (events that indicate that a reversal is upcoming) or what they might be. We investigate if machine learning (ML) techniques can reliably identify precursors of reversals based on time-series of the axial magnetic dipole field. The basic idea is to train a classifier using segments of time-series of the axial magnetic dipole. This training step requires modification of standard ML techniques to account for the fact that we are interested in rare events—a reversal is unusual, while a non-reversing field is the norm. Without our tweak, the ML classifiers lead to useless predictions. Perhaps even more importantly, the usable observational record is limited to 0–2 Ma and contains only five reversals, necessitating that we determine if the data are even sufficient to reliably train and validate an ML algorithm. To answer these questions we use several ML classifiers (linear/non-linear support vector machines and long short-term memory networks), invoke a hierarchy of numerical models (from simplified models to 3-D geodynamo simulations), and two palaeomagnetic reconstructions (PADM2M and Sint-2000). The performance of the ML classifiers varies across the models and the observational record and we provide evidence that this is not an artefact of the numerics, but rather reflects how ‘predictable’ a model or observational record is. Studying models of Earth’s magnetic field via ML classifiers thus can help with identifying shortcomings or advantages of the various models. For Earth’s magnetic field, we conclude that the ability of ML to identify precursors of reversals is limited, largely due to the small amount and low frequency resolution of data, which makes training and subsequent validation nearly impossible. Put simply: the ML techniques we tried are not currently capable of reliably identifying an axial dipole moment (ADM) precursor for geomagnetic reversals. This does not necessarily imply that such a precursor does not exist, and improvements in temporal resolution and length of ADM records may well offer better prospects in the future.

Kyle Gwirtz↗

Tip-based proximity ferroelectric switching and piezoelectric response in wurtzite multilayers

Proximity ferroelectricity is a paradigm for inducing ferroelectricity when a nonferroelectric polar material (such as Al⁢ N), which is unswitchable with an external field below the dielectric breakdown field, becomes a practically switchable ferroelectric in direct contact with a thin switchable ferroelectric layer (such as Al 1−𝑥 ⁢Sc 𝑥 ⁢N). Here, we develop a Landau-Ginzburg-Devonshire approach to study the proximity effect of local piezoelectric response and polarization reversal in wurtzite ferroelectric multilayers under a sharp electrically biased tip. Using finite-element modeling, we analyze the probe-induced nucleation of nanodomains, the features of local polarization hysteresis loops and coercive fields in the Al 1−𝑥 ⁢Sc 𝑥 ⁢N/Al⁢ N bilayers and three-layers. Similar to the wurtzite multilayers sandwiched between two parallel electrodes, the regimes of “proximity switching” (when all layers collectively switch) and the regime of “proximity suppression” (when they collectively do not switch) are the only two possible regimes in the probe-electrode geometry. However, the parameters and asymmetry of the local piezoresponse and polarization hysteresis loops depend significantly on the sequence of the layers with respect to the probe. The physical mechanism of proximity ferroelectricity in the local probe geometry is a depolarizing electric field determined by the polarization of the layers and their relative thickness. The field, whose direction is opposite to the polarization vector in the layer(s) with the larger spontaneous polarization (such as Al⁢ N), renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier in the “otherwise unswitchable” polar layers. Tip-based control of domains in otherwise nonferroelectric layers using proximity ferroelectricity can provide nanoscale control of domain reversal in memory, actuation, sensing, and optical applications. The ability of the tip-induced proximity switching to differentially switch multilayers, based on the order of the layers, provides a powerful tool for selective domain engineering.

36 MATERIALS SCIENCE↗

Ionic Control over Ferroelectricity in 2D Layered van der Waals Capacitors

The van der Waals layered material CuInP 2 S 6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneous polarization. Therefore, Cu migration across the lattice results in unusual ferroelectric behavior. Here, we demonstrate how the interplay of polar and ionic properties provides a path to ionically controlled ferroelectric behavior, achieved by applying selected DC voltage pulses and subsequently probing ferroelectric switching during fast triangular voltage sweeps. Using current measurements and theoretical calculations, we observe that increasing DC pulse duration results in higher ionic currents, the buildup of an internal electric field that shifts polarization loops, and an increase in total switchable polarization by ~50% due to the existence of a high polarization phase which is stabilized by the internal electric field. Apart from tuning ferroelectric behavior by selected square pulses, hysteretic polarization switching can even be entirely deactivated and reactivated, resulting in three-state systems where polarization switching is either inhibited or can be performed in two different directions.

36 MATERIALS SCIENCE↗

Tuning Dzyaloshinskii-Moriya interactions in magnetic bilayers with a ferroelectric substrate

Our group performed systematic first-principles calculations to explore the possibility of manipulating Dzyaloshinskii-Moriya interactions (DMIs) in heavy metal/ferromagnetic metal bilayers with ferroelectric (FE) polarization of a PbTiO 3 (PTO) substrate. Significantly, both the sign and magnitude of the DMI can be tailored by the FE polarization reversal in PTO. Moreover, the DMIs of Ir/Co/PTO and Ir/Fe/PTO can achieve large values (|d| > 10 meV) under the influence of an upward electric polarization of PTO. Our findings provided useful strategies for enhancing and tailoring DMIs in complex heterostructures and paved the way for the development of DMI-based devices with ultralow power consumption.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Latitudinal extent of the heliospheric current sheet and modulation of galactic cosmic rays

Possible correlations were investigated between the modulation of galactic cosmic rays and changes in the maximum heliographic latitude of the heliospheric current sheet during solar maximum. Solar photospheric magnetic field data from 1976-82 were extrapolated by means of potential theory to obtain the maximum latitudinal extent of the current sheet in the northern and southern hemispheres. The latitudinal differences were compared with terrestrial neutron flux data and Pioneer 10 data on cosmic rays with energies below 200 MeV at heliocentric distances of 10-30 AU. Account was taken for the time delay for the solar wind to propagate out to the spacecraft location. The current sheet maxima were nearly symmetrical about the solar equator except during sunspot maxima, when the solar poles were reversing. Significant changes in the latitudinal symmetry were highly correlated with the neutron data and cosmic fluctuations at Pioneer 10. The sensitivity of cosmic rays to the polarity reversals is in accordance with predictions of the gradient drift model.

Smith, E. J.↗

Observation of anomalous slow-mode shock and reconnection layer in the dayside magnetospause

Plasma and magnetic field data from the International Sun-Earth Explorer ISEE 2 spacecraft recorded during an outbound crossing of the dayside, northern hemisphere magnetopause in October 29, 1979, provide evidence for a slow shock (SS) in the observed reconnection layer. This layer is found to be bounded on the magnetosheath side by the SS; near the magnetospheric side of the layer, a second current sheet is found that may have been rotational discontinuity (RD). The direction of the accelerated plasma flow, the earthward sense of the normal magnetic filed across the SS and RD, and the relative orientation of the SS and the RD all indicate that the reconection site was located south of the spacecraft. Quantitative tests show that, allowing for experiemental uncertanties, data taken upstream and downstream of the SS are consistent with coplanarity and other Rankine-Hugoniot (RH) conditions. Examiniations of the flow parameters indicates two anomalous properties of the SS: the upstream flow, viewed in the deHoffmann-Teller frame, is superalfvenic and the downstream plasma is firehose unstable. In comparison to the long-wavelength slow-mode phase speed, however, the flow in the upstream region is super slow, while in the downstream region it is subslow, as requeired for a slow-mode shock. Further properties of the shock include a large decrease in total enthalpy across it, indicating the escape of a sizable heat flux from the shock structure, and the occurrence of a polarization reversal of the tangential magnetic field within the shock layer, a feature that is predicted by linear double-polytropic Hall-MHD and results from a large increase in pressure anistropy from the upstream region, where p(sub parallel) approximately equal to p(sub perp), to the downstream region, where p(sub parrallel) greater than p(sub perp). Quantitative tests of the RD-like discontinuity show that it satisfies the necessary RH conditions within experimental uncertainties and indicate that the flow across it is earthward, that is, it is the same as for the SS. Thus the RD is propagating behind the SS in the direction away from the Earth. The reversal in the order of the discontinuities is attributed to the reversal of the slow and intermediate phase speeds produced by the pressure anistropy in the region between the RD and the SS. The linear dispersion relation and polarization properties of dispersive MHD waves in an anisotropic plasma are examined in the appendix.

Walthour, D. W↗

Observation of Defect-Assisted Magnetic Vortex Core Reversal at Ultralow Critical Velocity

The stability of structures with nontrivial topology is a subject of great interest, both from fundamental and technological perspectives. The topology of a magnetic vortex, for example, results in high stability of the vortex core polarity, which is attractive for applications. This high stability, however, greatly impedes the required deterministic polarity switching, which is typically only achieved with large magnetic fields or strong dynamic driving. Here, we show that the interaction between the vortex core and manufactured nanoscale defects in the magnetic material lowers the required driving strength for core polarity reversal by more than an order of magnitude. We excite vortex dynamics in thin permalloy disks, and map the twodimensional (2D) vortex core trajectory using 3D time-resolved Kerr microscopy. In pristine samples, we observe normal gyrotropic motion of the vortex core. After laser-induced generation of defects, however, we observe repeated vortex core reversal at much-reduced driving strength. Micromagnetic simulations reveal how local reduction of exchange coupling and saturation magnetization can create vortex core reversal sites for deterministic vortex core switching.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Coronal streamers in the solar wind at 1 AU

Virtually all solar wind observing groups have reported substantial variations in the solar wind helium-hydrogen abundance ratio (A(He)). A study of Los Alamos Imp solar wind data has revealed an association between low A(He) and high proton density that occurs at low flow speeds and that is correlated with polarity reversals of the interplanetary magnetic field. The current investigation has the objective to present further examples of the low A(He), high proton density, low speed, magnetic field polarity association, and to document the common occurrence of multiple events lasting approximately 3-7 days. The results are presented of attempts to relate these events directly to maps or isophotes of solar coronal brightness at 1.5 solar radii. The results of the investigation suggest that a substantial fraction of the low-speed solar wind originates in coronal streamers, particularly near solar minimum.

Gosling, J. T.↗

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO 3 . Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The response of sub-surface domains is studied by FIB cross-sectioning, enabling imaging in the direction perpendicular to the applied electric field. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.

36 MATERIALS SCIENCE↗

Variable-Polarity Plasma Arc Welding Of Alloy 2219

Report presents results of study of variable-polarity plasma arc (VPPA) welding of aluminum alloy 2219. Consists of two parts: Examination of effects of microsegregation and transient weld stress on macrosegregation in weld pool and, electrical characterization of straight- and reverse-polarity portions of arc cycle.

Walsh, Daniel W.↗

Mathematical Model Of Variable-Polarity Plasma Arc Welding

Mathematical model of variable-polarity plasma arc (VPPA) welding process developed for use in predicting characteristics of welds and thus serves as guide for selection of process parameters. Parameters include welding electric currents in, and durations of, straight and reverse polarities; rates of flow of plasma and shielding gases; and sizes and relative positions of welding electrode, welding orifice, and workpiece.

Hung, R. J.↗

Switching kinetics in ferroelectric zinc magnesium oxide thin films

The switching kinetics of RF-magnetron reactively sputtered ~200 nm thick Zn 1-x Mg x O (ZMO) ferroelectric thin films with x = 0.41 and x = 0.27 prepared on Pt/Ti/SiO 2 /Si substrates were studied at applied fields near the coercive fields, ranging from 3.4 to 5.1 MV cm -1 , and at temperatures ranging from room temperature to 100 °C. Polarization reversal in ZMO followss the Kolmogorov-Avrami-Ishibashi kinetics model for nucleation and growth at applied fields near the coercive field, and obeys an individual column switching (ICS) model at higher applied fields required to switch most of the spontaneous polarization. Switching in the high-applied field regime can be described using either the Gaussian or inverse gamma distribution functions depending on the mole fraction of magnesium in the film. The switching current transients of the high-Mg content ZMO film (x = 0.41) are always bi-modal, whereas the low Mg composition film (x = 0.27) is described by the Gaussian distribution initially following wake-up, and becomes bimodal with continued cycling. Rayleigh-like behavior of the dielectric constant revealed a simultaneous increase of the irreversible and decrease of the reversible contributions to the dielectric constant, which was ascribed to an increase in the density of mobile domain walls with cycling and resulted in faster switching.

30 DIRECT ENERGY CONVERSION↗

Changes in the energy spectrum of anomalous oxygen during 1977-1985

Spatial and temporal variations of the interplanetary cosmic ray oxygen spectrum over the 11 yr solar and cosmic ray modulation cycle are discussed. The variations were monitored with instrumentation on the Voyager 1 and 2 and the Pioneer 10 spacecraft over the period 1977-85. The analysis concentrates on 4-30 MeV nuclei, where the anomalous component of cosmic rays dominates. The number of particles of anomalous oxygen increased with increasing distance from the sun. Furthermore, the particles exhibited, on the average, higher energies after the middle of 1980, when a solar magnetic field reversal occurred. The Voyager 1 spacecraft, 24 deg out of the ecliptic plane, did not register as high a shift in energy during the same period. It is concluded that cosmic ray drift effects are closely associated with solar magnetic field polarity reversals, a situation which may be examined more fully during the solar minimum beginning in 1985.

Cummings, A. C.↗

High-resolution observations of the polar magnetic fields of the sun

High-resolution magnetograms of the solar polar region were used for the study of the polar magnetic field. In contrast to low-resolution magnetograph observations which measure the polar magnetic field averaged over a large area, we focused our efforts on the properties of the small magnetic elements in the polar region. Evolution of the filling factor (the ratio of the area occupied by the magnetic elements to the total area) of these magnetic elements, as well as the average magnetic field strength, were studied during the maximum and declining phase of solar cycle 22, from early 1991 to mid-1993. We found that during the sunspot maximum period, the polar regions were occupied by about equal numbers of positive and negative magnetic elements, with equal average field strength. As the solar cycle progresses toward sunspot minimum, the magnetic field elements in the polar region become predominantly of one polarity. The average magnetic field of the dominant polarity elements also increases with the filling factor. In the meanwhile, both the filling factor and the average field strength of the non-dominant polarity elements decrease. The combined effects of the changing filling factors and average field strength produce the observed evolution of the integrated polar flux over the solar cycle. We compared the evolutionary histories of both filling factor and average field strength, for regions of high (70-80 deg) and low (60-70 deg) latitudes. For the south pole, we found no significant evidence of difference in the time of reversal. However, the low-latitude region of the north pole did reverse polarity much earlier than the high-latitude region. It later showed an oscillatory behavior. We suggest this may be caused by the poleward migration of flux from a large active region in 1989 with highly imbalanced flux.

Lin, H.↗

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Campbell, Kristy A.↗

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A.↗

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A↗