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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

The research program to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon is reported. The initial effort concentrated on the design and construction of the experimental dip-coating facility. The design was completed and its experimental features are discussed. Current status of the program is reported, including progress toward solar cell junction diffusion and miscellaneous ceramic substrate procurement.

Heaps, J. D.↗
NASA NTRS1977

Transmutation doping of silicon solar cells

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Wood, R. F.↗
NASA NTRS1978

Effect of grain boundaries in silicon on minority-carrier diffusion length and solar-cell efficiency

The spatial variation of minority-carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The effect of such a variation on solar-cell output has then been computed as a function of grain size. Calculations show that the cell output drops considerably for grain size smaller than three times the bulk diffusion length.

Daud, T.↗
NASA NTRS1979

Silicon-on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

The technical and economic feasibility of producing solar cell-quality silicon was investigated. This was done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress in the following areas was demonstrated: (1) fabricating a 10 sq cm cell having 9.9 percent conversion efficiency; (2) producing a 225 sq cm layer of sheet silicon; and (3) obtaining 100 microns thick coatings at pull speed of 0.15 cm/sec, although approximately 50 percent of the layer exhibited dendritic growth.

Chapman, P. W.↗
NASA NTRS1985

Adjustable Lid Aids Silicon-Ribbon Growth

Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.

Mchugh, J. P.↗
NASA NTRS1979

Silicon on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

The technical and economic feasibility of producing solar cell quality sheet silicon was investigated. It was hoped this could be done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Work was directed towards the solution of unique cell processing/design problems encountered with the silicon-ceramic (SOC) material due to its intimate contact with the ceramic substrate. Significant progress was demonstrated in the following areas; (1) the continuous coater succeeded in producing small-area coatings exhibiting unidirectional solidification and substatial grain size; (2) dip coater succeeded in producing thick (more than 500 micron) dendritic layers at coating speeds of 0.2-0.3 cm/sec; and (3) a standard for producing total area SOC solar cells using slotted ceramic substrates was developed.

Chapman, P. W.↗
NASA NTRS1981

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600 C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after growth, preferentially segregates to grain and becomes electrically deactivated. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty year device lifetime.

Hopkins, R. H.↗
NASA NTRS2000

Effects of Radiation on the Mechanical Properties of Polysilicon and Polydiamond thin Film

Due to its many excellent properties, diamond is being explored as a material for MicroElectroMechanical Systems (MEMS). However, as is true in the case of silicon, a large amount of basic material characterization issues still warrant investigation. This paper presents preliminary results from charged particle irradiation of Chemical Vapor Deposited (CVD) polycrystalline diamond films. The films were simultaneously dosed to a level of 9.4 x l0(exp 13)/sq cm using 700 keV protons and 1 MeV electrons. The samples were then subject to cross-sectional nanoindention analysis and Raman spectroscopy. Polycrystalline silicon was also investigated for comparison purposes. The diamond was unaffected by the irradiation. However, the silicon did indicate a slight decrease in the Young's Modulus.

Newton, Robert L.↗
NASA NTRS1978

Silicon solar cells, a manufacturing cost analysis

A detailed cost analysis of solar cell module manufacturing, utilizing process sequences incorporating near-term technology, has been performed. The entire structuring of a factory to manufacture solar cell modules, starting from supplied polycrystalline silicon and other raw materials, was specified. This analysis then formed the basis for a sensitivity analysis of the major cost factors. The results of the cost and sensitivity analyses are presented here.

Grenon, L. A.↗
NASA NTRS1979

The Production of Solar Cell Grade Silicon from Bromosilanes

A continuous Flow Reactor (CFR) process based on the hydrogen reduction of the bromosilanes SiBr4 and SiHBr3 was proposed. Initial experiments carried and directed at obtaining overall yield data for bromosilane reduction in the CFR, indicated the need for increased reactor residence time and deposition substrate particle packing density to fully characterize the kinetics (rate) and thermodynamics (yield) of observed silicon production. Fluidized bed experiments were therefore initiated to overcome these experimental difficulties, which showed both thermal decomposition and hydrogen reduction of SiHBr3 in a fluid bed reactor to present attractive closed-loop processes for producing solar cell grade polycrystalline silicon. No process selection could be made however due to the fact that preliminary optimization of 2 of 3 process stages in each case during the course of the experimental program showed comparable attainment of cost element objectives.

Schumacher, J. C.↗
NASA NTRS1987

High purity silane and silicon production

Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.

Breneman, William C.↗
NASA NTRS1978

Multiple silicon ribbon growth by EFG

The background and progress to date of EFG ribbon growth for solar cell applications are briefly reviewed. The design and operation of a multiple ribbon-per-operator manufacturing system are then described. Results are presented of cost studies of this system at three stages of development. In the latter stage, believed to be attainable by 1986, conversion costs for polycrystalline silicon into wafers are attained which are consistent with manufacture of photovoltaic systems at $0.50 per peak watt. Principal technological problems in the ribbon growth process are discussed.

Mackintosh, B. H.↗
NASA NTRS1980

Development of processes for the production of low cost silicon dendritic web for solar cells

High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

Duncan, C. S.↗
NASA NTRS1983

Silicon solar cell process development, fabrication and analysis

Measurements of minority carrier diffusion lengths were made on the small mesa diodes from HEM Si and SILSO Si. The results were consistent with previous Voc and Isc measurements. Only the medium grain SILSO had a distinct advantage for the non grain boundary diodes. Substantial variations were observed for the HEM ingot 4141C. Also a quantitatively scaled light spot scan was being developed for localized diffusion length measurements in polycrystalline silicon solar cells. A change to a more monochromatic input for the light spot scan results in greater sensitivity and in principle, quantitative measurement of local material qualities is now possible.

Leung, D. C.↗
NASA NTRS1972

Dimensional-stability studies of candidate space-telescope mirror-substrate materials

The effects of aging, vacuum exposure, and thermal cycling on the dimensional stability of mirror-substrate materials, fused silica, Cer-Vit, Kanigen-coated beryllium, polycrystalline silicon, and U.L.E. fused silica were investigated. A multiple-beam interferometer was used to determine nonrecoverable surface-shape changes of the 12.7-cm-diameter mirrors with substrates of these materials. Thermal cycling and aging in vacuum produced the largest changes, but only a few were as large as 1/30 wavelength, where the wavelength was 632.8 nm.

Jerke, J. M.↗
NASA NTRS1973

Effects of surface polishing on the microstrain behavior of telescope mirror materials

Rough ground silicic mirror substrate materials were found in previous investigations to exhibit significant surface yield. This effect was removed by surface etching, a procedure not normally employed in the finishing of optical telescope mirrors. The effects of fine grinding and polishing techniques as well as graded etching are investigated. Torsional shear measurements of yield strain versus stress are made on four candidate mirror substrate materials: polycrystalline silicon, ULE silica 7971, CER-VIT 101, and fused silica 7940. Commonly employed fine grinding and polishing practices are shown to remove a major portion of the surface yield found in rough ground mirror substrate materials.

Eul, W. A.↗