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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Electronic properties of corundum-like Ir 2 O 3 and Ir 2 O 3 -Ga 2 O 3 alloys

In the hexagonal, corundum-like structure, α-Ga 2 O 3 has a bandgap of ~5.1 eV, which, combined with its relatively small electron effective mass, high Baliga's figure of merit, and high breakdown field, makes it a promising candidate for power electronics. Ga 2 O 3 is easy to dope n-type, but impossible to dope p-type, impeding the realization of some electronic device designs. Developing a lattice-matched p-type material that forms a high-quality heterojunction with n-type Ga 2 O 3 would open new opportunities in electronics and perhaps optoelectronic devices. In this work, we studied Ir 2 O 3 as a candidate for that purpose. Using hybrid density functional theory calculations we predict the electronic band structure of α-Ir 2 O 3 and compare that to α-Ga 2 O 3 , and study the stability and electronic properties of α-(Ir x Ga 1–x ) 2 O 3 alloys. We discuss the band offset between the two materials and compare it with recently available experimental data. We find that the Ir d bands that compose the top of the valence band in α-Ir 2 O 3 are much higher in energy than O p bands in α-Ga 2 O 3 , possibly enabling effective p-type doping. Finally, our results provide an insight into using the Ir 2 O 3 or Ir 2 O 3 -Ga 2 O 3 alloys as p-type material lattice-matched to α-Ga 2 O 3 for the realization of p–n heterojunctions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Radiative Heat Transfer and 2D Transition Metal Dichalcogenide Materials

Here we study the radiative heat transfer power in the family of transition metal dichalcogenide monolayers in their H- and T-symmetries. For this purpose, the electronic and optical properties computed from first-principles are used in effective models to understand the emerging scaling laws for metals and semiconductors as well as specific material signatures as control knobs for radiative heat transfer. Our combined approach of analytical modeling with properties from ab initio simulations can be used for other materials families to build a materials database for radiative heat transfer.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

Engineering the electronic band structure of two-dimensional (2D) materials by imposing spatially periodic superlattice (SL) potentials opens a pathway to unconventional electronics. Nanopatterning the gate electrode or surface dielectric near 2D crystals provides a powerful strategy for realizing electrostatically tunable “remote” SLs with flexibility in lattice design. Here, we demonstrate the effectiveness of block copolymer (BCP)-templated dielectric nanopatterns for fabricating etch-free high-grade metal oxide SLs. Alumina (AlO x ) nanopatterns with hexagonal symmetry and a 38 nm SL wavelength are produced as a model material by directly converting a self-assembled BCP film via block-selective vapor phase infiltration. Despite micrometer-scale rotational disorder inherent to BCP self-assembly, electronic transport measurements of graphene reveal replica Dirac points at zero field and Hofstadter mini-gaps under finite magnetic fields. These results indicate the successful formation of remote SL potentials in graphene resulting from optimized AlO x nanopattern fabrication to achieve consistent lattice symmetry and periodicity at a macroscopic scale. The findings of this study, combined with the versatile, scalable, and cost-effective nature of BCP nanopatterning, highlight the potential of BCP-templated nanostructures for remote SL engineering in 2D crystals.

36 MATERIALS SCIENCE↗
DOE OSTI2025

General kinetic ion-induced electron emission model for metallic walls applied to biased Z-pinch electrodes

A kinetic ion-induced electron emission (IIEE) model for general applications is developed to obtain the emitted electron energy spectrum for a distribution of ion impacts on a metallic surface. We assume an ionization cascade mechanism and use empirical models for the ion and electron stopping powers. The emission spectrum and the secondary electron yield (SEY) are validated for a variety of materials. The IIEE model is used to study the effect of IIEE on the plasma-material interactions of Z-pinch electrodes. Un-magnetized Boltzmann-Poisson simulations are performed for a Z-pinch plasma doubly bounded by two biased copper electrodes with and without IIEE at bias potentials from 0 to 9 kV. At the anode, the SEY decreases from 0 to 1 kV, but then increases at higher bias potentials. At the cathode, the SEY is much larger due to higher energy ion bombardment and grows with bias potential. As the bias potential increases, the emitted cathode electrons are accelerated to higher energies into the domain, collisionally heating the plasma. Above 1 kV, the heating is strong enough to increase the plasma potential. Despite SEY greater than 1, only a classical sheath forms as opposed to a space-charge limited or inverse sheath due to the emitted electron flux not reaching the space charge current saturation limits. Furthermore, the current in the emissionless cases saturates to a value lower than experiment. With IIEE, the current does not saturate and continues to increase with the 4 kV case, matching most closely with the experiment.

Carbon based materials↗
DOE OSTI2025

Ultrawide bandgap semiconductor h-BN for direct detection of fast neutrons

III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. Among III-nitrides, BN has another unique application as a solid-state neutron detector material because the isotope B-10 is among a few elements that have an unusually large interaction cross section with thermal neutrons. A record high thermal neutron detection efficiency of 60% has been achieved by B-10 enriched h-BN detectors of 100 μm in thickness in our group. However, direct detection of fast neutrons with energies above 1 MeV is highly challenging due to the extremely low interaction cross section of fast neutrons with matter. We report the successful attainment of 0.4 mm thick freestanding h-BN 4"-diameter wafers, which enabled the demonstration of h-BN fast neutron detectors capable of delivering a detection efficiency of 2.2% in response to a bare AmBe neutron source. Furthermore, it was shown that the energy information of incoming fast neutrons is retained in the neutron pulse-height spectra. A comparison of characteristics between h-BN fast and thermal neutron detectors is summarized. Neutron detectors are vital diagnostic instruments for nuclear and fusion reactor power and safety monitoring, oil field exploration, neutron imaging and therapy, as well as for plasma and material science research. With the outstanding attributes resulting from its ultrawide bandgap (UWBG), including the ability to operate at extreme conditions of high power, voltage, and temperature, the availability of h-BN UWBG semiconductor detectors with the capability of simultaneously detecting thermal and fast neutrons with high efficiencies is expected to open unprecedented applications that are not possible to attain by any other types of neutron detectors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Cyclotron resonance accelerators for industrial applications

Here, this paper describes novel configurations for cyclotron resonance acceleration of electrons and ions that have several attractive features including: a compact robust room-temperature single-cell RF cavity as the accelerator structure; and continuous high current accelerated un-bunched beam output with self-scanning, obviating need for a separate beam scanner. An electron accelerator version, the electron Cyclotron Resonance Accelerator (eCRA), is under development to be an efficient source for high power electron and x-ray beams for medical, research, sterilization, and National Security applications, so as to replace radioactive materials. An ion accelerator version, the ion Cyclotron Auto-Resonance Accelerator (iCARA) is described here, suggesting its potential to produce, as an example, a high-current multi-MeV beam of deuterons which could be highly competitive with that produced either with linacs or cyclotrons. Such a deuteron beam could produce a high flux of fast neutrons via deuteron stripping, for applications including the transmutation of used nuclear fuel, material studies relevant for a fusion reactor inner wall, tritium breeding and medical isotope production. For the high-current, high efficiency simulated performance for eCRA and iCARA as described in this paper, the particle beams produced may not exhibit the low emittance values that are important for most discovery research. Rather, the beams could be useful for industrial applications where higher emittance and some energy spread can be tolerated, in favor of high beam power.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Distinct Dynamics of Lithium Intercalation and Plating on Graphite Anode for Li‐Ion Batteries in eVTOL Applications

In the absence of viable high-energy-density battery alternatives, lithium-ion (Li-ion) batteries remain essential for enabling electric vertical take-off and landing (eVTOL) platforms in advanced air mobility. Unlike Li-ion batteries used in electric vehicles and portable electronics, eVTOL battery systems operate under distinct high-power demands, which necessitate an independent assessment of material degradation mechanisms. This study presents a case analysis of graphite anode evolution under high-power cycling conditions. The findings reveal lithium entrapment within graphite particles, potentially resulting from incomplete Li-ion de-intercalation during a high-rate discharge event that is characteristic of eVTOL take-off and landing. This phenomenon leads to a progressive reduction in graphite-specific capacity and, over time, promotes lithium metal plating on the anode. Notably, the Li-metal plating observed in this study differs from that associated with fast-charging conditions, as it is primarily governed by concentration polarization-induced overpotential in the latter case. In conclusion, these findings highlight the inherent challenges of utilizing graphite in high-power Li-ion battery applications and elucidate the unique degradation mechanisms that arise due to the sluggish reaction kinetics of Li-ion intercalation and de-intercalation within graphite.

Li plating↗
DOE OSTI2025

Tuning Interface Electronic Properties via Chiral Two‐Dimensional Metal‐Organic Frameworks

Control over structural symmetries in nanomaterials offers a powerful approach to engineer electronic properties. For instance, breaking of mirror symmetries in two-dimensional (2D) materials with a hexagonal lattice can lead to nontrivial electronic topologies and correlated-electron phenomena. Yet, the impact of structural chirality on the electronic properties of 2D materials and interfaces remains underexplored. Here, how chiral phases of a 2D metal-organic framework (MOF) with a hexagonal lattice—consisting of hexaazatriphenylene molecules coordinated to Cu atoms—scatter, confine, and perturb the Shockley surface state (SS) electrons of an underlying Ag(111) substrate is investigated. Via low-temperature scanning tunneling microscopy and spectroscopy, noncontact atomic force microscopy, and numerical calculations based on an electronic plane-wave expansion method, modifications of the Ag(111) SS band structure are shown and quantified, including gap openings and lifts of band degeneracies, driven exclusively by the structural chirality of the 2D MOF phases. These findings highlight how structural symmetries, in particular chirality, affect electronic states at material interfaces, expanding on the toolkit for designing 2D materials with tailored electronic properties.

band structure engineering↗
DOE OSTI2025

Tunneling Barrier-Integrated Gold Nanofilms for Negative Strain Gauging with Near-Zero Energy Consumption

Wireless strain sensors with minimal power needs are essential for long-term monitoring in energy-limited environments. We present a soft tunneling barrier-integrated gold thin film for negative strain sensing with near-zero energy consumption. The device features a strain-induced transition from an insulating to a metallic state, increasing conductivity by 9 orders of magnitude under a controlled strain. It consists of Au-PDMS-Au nanofilm layers, where the Au structures are near the percolation threshold and the PDMS layer acts as a tunneling barrier. Under strain, thinning due to the Poisson effect lowers the barrier’s potential height, enabling electron tunneling and forming an electrical path. Further, with a standby power consumption of ~10 –5 mW over 10 6 times lower than conventional sensors (~12.5 mW), this device is ideal for real-time, long-term stationary structural monitoring in multiple locations.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

High entropy powering green energy: hydrogen, batteries, electronics, and catalysis

A reformation in energy is underway to replace fossil fuels with renewable sources, driven by the development of new, robust, and multi-functional materials. High-entropy materials (HEMs) have emerged as promising candidates for various green energy applications, having unusual chemistries that give rise to remarkable functionalities. This review examines recent innovations in HEMs, focusing on hydrogen generation/storage, fuel cells, batteries, semiconductors/electronics, and catalysis—where HEMs have demonstrated the ability to outperform state-of-the-art materials. We present new master plots that illustrate the superior performance of HEMs compared to conventional systems for hydrogen generation/storage and heat-to-electricity conversion. We highlight the role of computational methods, such as density functional theory and machine learning, in accelerating the discovery and optimization of HEMs. The review also presents current challenges and proposes future directions for the field. We emphasize the need for continued integration of modeling, data, and experiments to investigate and leverage the underlying mechanisms of the HEMs that are powering progress in sustainable energy.

batteries↗
DOE OSTI2024

Pool Boiling Reliability Tests and Degradation Mechanisms of Microporous Copper Inverse Opal (CuIOs) Structures

The rising power density in electronic systems requires thermal management solutions that are both high-performing and reliable. Porous materials such as Copper Inverse Opal (CuIOs) have unique structural features, including high permeability and high thermal conductivity, to enhance pool boiling performance. However, there is little understanding of the degradation mechanism of such porous materials under pool boiling conditions. In this study, samples of 10 ..mu..m thick CuIOs with 4.8 ..mu..m diameter, covering silicon substrate of area 11 mm x 11 mm, with various heated areas ranging from 2.5 mm x 2.5 mm to 10 mm x 10 mm, were tested in 100 degrees C deionized water at a constant heat flux of 110 Wcm -2 for 3-to-7 days. The combined effect of erosion and corrosion caused structural degradation of the CuIOs. The directly heated area had the most severe degradation while the edge of the heater and the unheated area showed progressively less degradation, maintaining some CuIOs structure even after the 7-day reliability test. Among all the tested samples with various heater sizes, the 2.5 mm x 2.5 mm heater sample - in which the heater size was designed to be comparable to the water bubble characteristic length - had the largest critical heat flux (CHF) up to 300 Wcm -2 with a superheat ~ 13 degrees C. Additionally, CuIOs with a smaller heated area performed better in terms of reliability. This study offers preliminary insights into CuIOs degradation mechanisms, contributing to the development of more robust thermal management solutions. We expect that electroless plating of CuIOs with gold (Au), nickel (Ni), and atomic layer deposition (ALD) aluminum oxide (Al 2 O 3 ) in combination with appropriate application-specific coolants will further improve the reliability and lifetime of the CuIOs.

boiling-induced degradation↗
DOE OSTI2024

Pool Boiling Reliability Tests and Degradation Mechanisms of Microporous Copper Inverse Opal (CuIOs) Structures: Preprint

The rising power density in electronic systems requires thermal management solutions that are both high-performing and reliable. Porous materials such as Copper Inverse Opals (CuIOs) have unique structural features, including high permeability and high thermal conductivity, to enhance pool boiling performance. However, there is little understanding of the degradation mechanism of such porous materials under pool boiling conditions. In this study, samples of 10-micrometer-thick CuIOs with 4.8-micrometer diameter, covering silicon substrate of area 11-mm by 11-mm, with various heated areas ranging from 2.5-mm by 2.5-mm to 10-mm by 10-mm, were tested in 100 degrees C deionized water at a constant heat flux of 110 watts per square cm for 3-7 days. The combined effect of erosion and corrosion caused structural degradation of the CuIOs. The directly heated area had the most severe degradation while the edge of the heater and the unheated area showed progressively less degradation, maintaining some CuIOs structure even after the 7-day reliability test. Among all the tested samples with various heater sizes, the 2.5-mm by 2.5-mm heater sample - in which the heater size was designed to be comparable to the water bubble characteristic length - had the largest critical heat flux (CHF) up to 300 watts per square cm with a superheat of approximately 13 degrees C. Additionally, CuIOs with a smaller heated area performed better in terms of reliability. This study offers preliminary insights into CuIOs degradation mechanisms, contributing to the development of more robust thermal management solutions. We expect that electroless plating of CuIOs with gold (Au), nickel (Ni), and atomic layer deposition of aluminum oxide in combination with appropriate application-specific coolants will further improve the reliability and lifetime of the CuIOs.

boiling-induced degradation↗
DOE OSTI2024

Atomic resolution scanning transmission electron microscopy at liquid helium temperatures for quantum materials

Fundamental quantum phenomena in condensed matter, ranging from correlated electron systems to quantum information processors, manifest their emergent characteristics and behaviors predominantly at low temperatures. This necessitates the use of liquid helium (LHe) cooling for experimental observation. Atomic resolution scanning transmission electron microscopy combined with LHe cooling (cryo-STEM) provides a powerful characterization technique to probe local atomic structural modulations and their coupling with charge, spin and orbital degrees-of-freedom in quantum materials. However, achieving atomic resolution in cryo-STEM is exceptionally challenging, primarily due to sample drifts arising from temperature changes and noises associated with LHe bubbling, turbulent gas flow, etc. In this work, we demonstrate atomic resolution cryo-STEM imaging at LHe temperatures using a commercial side-entry LHe cooling holder. Firstly, we examine STEM imaging performance as a function of He gas flow rate, identifying two primary noise sources: He-gas pulsing and He-gas bubbling. Secondly, we propose two strategies to achieve low noise conditions for atomic resolution STEM imaging: either by temporarily suppressing He gas flow rate using the needle valve or by acquiring images during the natural warming process. Lastly, we show the applications of image acquisition methods and image processing techniques in investigating structural phase transitions in Cr 2 Ge 2 Te 6 , CuIr 2 S 4 , and CrCl 3 . In conclusion, our findings represent an advance in the field of atomic resolution electron microscopy imaging for quantum materials and devices at LHe temperatures, which can be applied to other commercial side-entry LHe cooling TEM holders.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Validation of electron backscattering in the MCNP6.3 code

A new electron backscattering validation suite has been developed for the MCNP® code. The calculations in this suite cover both condensed history and single-event transport methods, seven different elemental materials ranging from beryllium to uranium, and incident electron energies from 200 eV to 14.1 MeV. In general, the accuracy of the MCNP code for electron backscattering calculations is energy-dependent. For incident electron energies below 2 keV, the condensed history method is not applied while the single-event method shows poor agreement with experimental measurements due to poor accuracy of the underlying atomic data. For incident energies between 2 keV and 256 keV, the single-event method typically shows better agreement with experiments, while for incident energies above 256 keV the condensed history method gives better accuracy. Additionally, agreement with experimental data is generally worse for low- Z materials such as beryllium and carbon, which may reflect deficiencies in the data or physics underlying electron transport through light elements in the MCNP code. The new electron backscattering validation suite, along with the previously introduced electron stopping power and Lockwood energy deposition validation suites, provide MCNP users with a quantified understanding of the uncertainties in electron transport calculations. Future improvements to electron transport in the MCNP code are necessary for low energies (≤ 2 keV) and for low- Z materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Ultra-thick three-dimensional interpenetrating graphene electrode architectures for high volumetric density energy storage

For electrochemical energy storage, increasing the electrode thickness is an effective approach to achieving higher energy density from a given material. However, this often compromises ion transport, leading to diminished performance. Here, in this study, we present a novel platform for fabricating complex 3D interpenetrating electrode structures via photo-polymerization 3D printing, integrated with computational structural optimization for energy storage. The platform employs an acrylate resin system infused with graphene oxide (GO), enabling high-fidelity printing of optimized porous structures and facilitating efficient electron and ion transport in ultra-thick electrodes. The optimized 3D layouts substantially enhance energy and power densities compared to conventional configurations, ensuring superior material utilization and minimal ohmic losses. Supercapacitors fabricated using this approach achieved an exceptional energy density of 4.7 Wh L−1 at a power density of 1689.0 W L−1, surpassing traditional designs. This work underscores the transformative role of structural optimization in advancing electrochemical performance and establishes a versatile pathway for developing next-generation energy storage systems with exceptional efficiency and functionality.

Wang, Zhen [University of California, Berkeley, CA↗
DOE OSTI2024

Creating a Universal PV Plug and Socket Standard

Photovoltaic connectors are designed to be quick and easy to install. Current connector qualification standards, such as UL 6703 and IEC 62852, are only intended to evaluate connectors from the same manufacturer and were recently changed to explicitly proscribe the mating of connectors from different manufacturers. Unfortunately, the industry has chosen to design connectors that will commonly connect together with those from other manufacturers. This is done to simplify installation avoiding the situations such as when the connectors on a microinverter, or other module level power electronics, do not match the connectors on the modules in the system. This rampant violation of electrical codes worldwide indicates that there is a strong desire and need to develop a universal connector standard. Here we present the initial approach and philosophy behind the formation of an IEC subgroup under TC82 WG2 looking at this problem. We intend to develop a standard where the materials and geometry of construction are specified to ensure compatibility and the design is intended to be of the highest quality. We expect that this connector will be more costly but especially in rooftop installations where power electronics requires matching components from several manufacturers, that this may still result in a net cost savings. These connectors must be of the highest quality because we wouldn’t want to develop a connector that precluded the manufacturing of a higher quality product, and because these will most commonly be used on rooftop installations where safety is more of a concern. Additionally, because we do not know which brands of connectors will be used together, we cannot simply rely on test results to ensure safety but must create a design that is as inherently safe as possible.

connectors↗
DOE OSTI2026

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗