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NASA NTRS2003

Advanced Data Acquisition Systems

Current and future requirements of the aerospace sensors and transducers field make it necessary for the design and development of new data acquisition devices and instrumentation systems. New designs are sought to incorporate self-health, self-calibrating, self-repair capabilities, allowing greater measurement reliability and extended calibration cycles. With the addition of power management schemes, state-of-the-art data acquisition systems allow data to be processed and presented to the users with increased efficiency and accuracy. The design architecture presented in this paper displays an innovative approach to data acquisition systems. The design incorporates: electronic health self-check, device/system self-calibration, electronics and function self-repair, failure detection and prediction, and power management (reduced power consumption). These requirements are driven by the aerospace industry need to reduce operations and maintenance costs, to accelerate processing time and to provide reliable hardware with minimum costs. The project's design architecture incorporates some commercially available components identified during the market research investigation like: Field Programmable Gate Arrays (FPGA) Programmable Analog Integrated Circuits (PAC IC) and Field Programmable Analog Arrays (FPAA); Digital Signal Processing (DSP) electronic/system control and investigation of specific characteristics found in technologies like: Electronic Component Mean Time Between Failure (MTBF); and Radiation Hardened Component Availability. There are three main sections discussed in the design architecture presented in this document. They are the following: (a) Analog Signal Module Section, (b) Digital Signal/Control Module Section and (c) Power Management Module Section. These sections are discussed in detail in the following pages. This approach to data acquisition systems has resulted in the assignment of patent rights to Kennedy Space Center under U.S. patent # 6,462,684. Furthermore, NASA KSC commercialization office has issued licensing rights to Circuit Avenue Netrepreneurs, LLC , a minority-owned business founded in 1999 located in Camden, NJ.

Perotti, J.↗

NASA NTRS2001

Silicon Carbide Electronic Devices

The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

Neudeck, P. G.↗

NASA NTRS2005

Evaluation of Power Electronic Components and Systems at Cryogenic Temperatures For Space Missions

Power electronic circuits and systems designed for deep space applications and outer planetary exploration are required to operate reliably and efficiently under extreme temperature conditions. This requirement is dictated by the fact that the operational environments associated with some of the space missions would encompass temperatures as low as -183 C. The development and utilization of electronics capable of low temperature operation would not only fulfill the advanced technology requirements, but also would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. These benefits are generally achieved by the improved intrinsic properties of some of the electronic materials at low temperature, reduced device losses, and the elimination of heating elements used in conventional systems at low temperatures. Power electronic circuits are widely used in space power systems in the areas of power management, conditioning, and control. In this work, the performance of certain power electronic components and systems was investigated under low temperature. These include inductors, capacitors, pulse-width-modulation (PWM) controllers, and advanced commercial DC/DC converter modules. Different properties were determined as a function of temperature in the range of 20 C to -140 C, at various current and voltages levels. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Elbuluk, Malik E.↗

NASA NTRS2001

Micromachined TWTs for THz Radiation Sources

The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.

Booske, John H.↗

NASA NTRS1976

B-52 stability augmentation system reliability

The B-52 SAS (Stability Augmentation System) was developed and retrofitted to nearly 300 aircraft. It actively controls B-52 structural bending, provides improved yaw and pitch damping through sensors and electronic control channels, and puts complete reliance on hydraulic control power for rudder and elevators. The system has experienced over 300,000 flight hours and has exhibited service reliability comparable to the results of the reliability test program. Development experience points out numerous lessons with potential application in the mechanization and development of advanced technology control systems of high reliability.

Bowling, T. C.↗

NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗

NASA NTRS2012

Lidar Electro-Optic Beam Switch with a Liquid Crystal Variable Retarder

A document discusses a liquid crystal variable retarder, an electro-optic element that changes the polarization of an optical beam in response to a low-voltage electronic signal. This device can be fabricated so that the element creates, among other states, a half-wave of retardance that can be reduced to a very small retardance. When aligned to a polarized source, this can act to rotate the polarization by 90 in one state, but generate no rotation in the other state. If the beam is then incident on a polarization beam splitter, it will efficiently switch from one path to the other when the voltage is applied. The laser beam switching system has no moving parts, improving reliability over mechanical switching. It is low cost, tolerant of high laser power density, and needs only simple drive electronics, minimizing the required system resources.

Baer, James↗

NASA NTRS2013

Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

thermal cycling tests↗

NASA NTRS1973

High voltage pulse ignition of mercury discharge hollow cathodes

A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability. The starting reliability, propellant and power savings offered by the high voltage pulse start should favorably impact performance of electron bombardment thrusters in missions requiring many on-off duty cycles.

Wintucky, E. G.↗

NASA NTRS2018

Preliminary Aerodynamic Measurements from a Magnetic Suspension and Balance System in a Low-Speed Wind Tunnel

An existing Magnetic Suspension and Balance System (MSBS) has been restored to operation in a small (octagonal test section, 6-inches across flats) low-speed wind tunnel as the first phase of a project to develop new dynamic test capabilities for planetary entry capsules at supersonic speeds. The MSBS and associated wind tunnel were originally designed and built at MIT and were subsequently relocated to NASA Langley Research Center. NASA ceased operations of the system in the late 1990s and it was transferred to Old Dominion University where it had been mothballed until the present work started in 2015. All-new position sensor electronics, electromagnet power supplies, digital controller, and other hardware have been developed, leading to more efficient and reliable operation. Important features of the new hardware will be briefly described. Wind tunnel testing has commenced, focusing first on static aerodynamics of re-entry capsule shapes. Some preliminary results will be reviewed, including comparison to reference data. The proposed extension to dynamic stability testing, using a variety of free-to-pitch approaches will be described. Finally, the preliminary design of the all-new Phase II (supersonic) system will be briefly outlined.

Schoenenberger, Mark↗

NASA NTRS2013

Radar Range Sidelobe Reduction Using Adaptive Pulse Compression Technique

Pulse compression has been widely used in radars so that low-power, long RF pulses can be transmitted, rather than a highpower short pulse. Pulse compression radars offer a number of advantages over high-power short pulsed radars, such as no need of high-power RF circuitry, no need of high-voltage electronics, compact size and light weight, better range resolution, and better reliability. However, range sidelobe associated with pulse compression has prevented the use of this technique on spaceborne radars since surface returns detected by range sidelobes may mask the returns from a nearby weak cloud or precipitation particles. Research on adaptive pulse compression was carried out utilizing a field-programmable gate array (FPGA) waveform generation board and a radar transceiver simulator. The results have shown significant improvements in pulse compression sidelobe performance. Microwave and millimeter-wave radars present many technological challenges for Earth and planetary science applications. The traditional tube-based radars use high-voltage power supply/modulators and high-power RF transmitters; therefore, these radars usually have large size, heavy weight, and reliability issues for space and airborne platforms. Pulse compression technology has provided a path toward meeting many of these radar challenges. Recent advances in digital waveform generation, digital receivers, and solid-state power amplifiers have opened a new era for applying pulse compression to the development of compact and high-performance airborne and spaceborne remote sensing radars. The primary objective of this innovative effort is to develop and test a new pulse compression technique to achieve ultrarange sidelobes so that this technique can be applied to spaceborne, airborne, and ground-based remote sensing radars to meet future science requirements. By using digital waveform generation, digital receiver, and solid-state power amplifier technologies, this improved pulse compression technique could bring significant impact on future radar development. The novel feature of this innovation is the non-linear FM (NLFM) waveform design. The traditional linear FM has the limit (-20 log BT -3 dB) for achieving ultra-low-range sidelobe in pulse compression. For this study, a different combination of 20- or 40-microsecond chirp pulse width and 2- or 4-MHz chirp bandwidth was used. These are typical operational parameters for airborne or spaceborne weather radars. The NLFM waveform design was then implemented on a FPGA board to generate a real chirp signal, which was then sent to the radar transceiver simulator. The final results have shown significant improvement on sidelobe performance compared to that obtained using a traditional linear FM chirp.

Li, Lihua↗

NASA NTRSDate not supplied

On the Moon to Stay: Challenges Presented to Power Electronics Technology by Sustained Operations on the Lunar Surface

NASA’s Artemis Program seeks not only to return humans to the Moon for the first time since the 1970’s but also to provide the technological basis for infrastructure that will enable permanent and expanding scientific and industrial exploitation of the Lunar surface. The primary purpose of this infrastructure is to generate and distribute power to a diverse and growing range of scientific and industrial assets, and the keys to success for this function are power management and control circuits that are highly reliable and maintainable for a decade of operation in the extreme thermal, radiation, and dust environment of the Lunar surface. While various combinations of wide band gap semiconductors, electronic devices, circuit topologies, and shielding schemes have been successfully developed for mission environments ranging from low Earth orbit to the Jovian system, power management technology has not been optimized to meet the full combination of mission requirements for the Lunar surface. To accomplish this, NASA requests the dedicated focus of the power electronics industry.

semiconductors↗

NASA NTRS1999

Low-Temperature Electronic Components Being Developed

In many future NASA missions, such as deep space planetary exploration and the Next Generation Space Telescope, electrical components and systems must operate reliably and efficiently in extremely low temperature environments. Most modern electronic components cannot operate below moderately low operating temperatures (-40 to -55 C). The low-temperature electronics program at the NASA Lewis Research Center is focusing on the development and characterization of low-temperature components and the integration of the developed devices into demonstrable very low-temperature (-200 C) power systems such as dc-dc converters. Such low-temperature electronics will not only tolerate hostile environments but also will reduce system size and weight by eliminating radioisotope heating units, thereby reducing launch cost, improving reliability and lifetime, and increasing energy densities. Low-temperature electronic components will also have a great influence on terrestrial applications such as medical instrumentation, magnetic levitation transportation systems, and arctic and antarctic exploration. Lewis researchers are now performing extensive evaluations of commercially available as well as custom-made devices. These include various types of energy storage and signal capacitors, power switching devices, magnetic and superconducting materials, and primary lithium batteries, to name a few.

Patterson, Richard L.↗

NASA NTRS2010

NASA Electronic Parts and Packaging (NEPP) Program - Update

This slide presentation reviews the goals and mission of the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. The program has been supporting NASA for over 20 years. The focus is on the reliability aspects of electronic devices. In this work the program also supports the electronics industry. There are several areas that the program is involved in: Memories, systems on a chip (SOCs), data conversion devices, power MOSFETS, power converters, scaled CMOS, capacitors, linear devices, fiber optics, and other electronics such as sensors, cryogenic and SiGe that are used in space systems. Each of these area are reviewed with the work that is being done in reliability and effects of radiation on these technologies.

LaBel, Kenneth A.↗

NASA NTRSDate not supplied

Qualification of a Pulsed, Millinewton Class Metal Plasma Thruster for Broad Mission Applications

In the field of low power (<100W) electric propulsion, all thruster options demand significant trade-offs between operating parameters, reliability and scalable cost. With many systems on the market there are concerns with reliability, the need for extra considerations such as electron neutralizers for pure ion plumes, and the cost or craft compatibility of propellants. The Metal Plasma Thruster (MPT) is a new type of electric propulsion technology intended for low power applications. The system imparts momentum using inert, solid metal pucks as a propellant by using pulsed power to convert the metal into high velocity (~17km/s for Mo) jets of quasi-neutral plasma. The MPT technology does not require gas or liquid propellants, neutralizers, standby heaters, high voltage electronics, high electric or magnetic fields to operate. This comparatively simple pulsed operation is amenable to closed loop control, which provides for fine thrust control and S/C directed impulse on demand. Furthermore, the technology can use any metal as propellant, opening up unique opportunities for In-Situ Resource Utilization (ISRU) as well as customizability of performance for meeting specific mission needs. This paper describes implementation and direct measurement of this closed loop control mode as well as impulse measurement of multiple metals consistent with the aim of ISRU at NASA Glenn Research Center (GRC).

Electric Propulsion↗

NASA NTRSDate not supplied

Qualification of a Pulsed, Millinewton Class Metal Plasma Thruster for Broad Mission Applications

Electric Propulsion↗

NASA NTRS1971

Measurements of plasma parameters in a simulated thermionic converter

Cesium-filled thermionic energy converters are examined as candidate electrical energy sources in spacecraft requiring tens to hundreds of kilowatts of electric power. The high operating temperatures necessary for a large specific power and high efficiency inevitably impose stringent constraints on the converter fabrication to achieve the desired reliability of the power system. The converter physics for reducing operating temperatures and cesium plasma losses are studied to achieve high reliability without sacrificing the power performance of the converters. Various cesium parameters which affect the converter performance are: (1) electron temperatures, (2) plasma ion densities, and (3) electric potential profiles. These were investigated using a Langmuir probe in a simulated converter. The parameters were measured in different cesium discharge modes.

Shimada, K.↗

NASA NTRS1972

Probe measurements of a cesium plasma in a simulated thermionic energy converter

Cesium-filled thermionic energy converters are considered as electrical energy sources in future spacecraft requiring tens to hundreds of kilowatts of electric power. The high operating temperatures necessary for a large specific power and high efficiency impose stringent constraints on the converter fabrication. The converter physics for reducing operating temperatures and cesium plasma losses are being studied to achieve high reliability without sacrificing the power performance of the converters. Various cesium parameters which affect the converter performance are: (1) electron temperatures, (2) plasma ion densities, and (3) electric potential profiles. These were investigated using a Langmuir probe in a simulated converter. The parameters were measured in different cesium discharge modes.

Shimada, K.↗