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At least 91 records · Page 5

Power Plant Systems Analysis

Three basic thermodynamic cycles of advanced nuclear MHD power plant systems are studied. The effect of reactor exit temperature and space radiator temperature on the overall thermal efficiency of a regenerative turbine compressor power plant system is shown. The effect of MHD pressure ratio on plant efficiency is also described, along with the dependence of MHD power output, compressor power requirement, turbine power output, mass flow rate of H2, and overall plant efficiency on the reactor exit temperature for a specific configuration.

Williams, J. R.↗

X-Band, 17-Watt Solid-State Power Amplifier

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Mittskus, Anthony↗

Indium gallium arsenide microwave power transistors

Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.

Johnson, Gregory A.↗

Reactor core length, externally configured thermionic converter.

Results of testing a converter having an external emitter configuration for 190 hours using RF induction heating. The converter was assembled with a rhenium emitter, 25.4 cm long, having a 91.2 sq cm emitting area, and a niobium collector with a molybdenum coating to improve its electronic property. The collector was water-cooled. The test included: static power output measurements, dynamic characteristics, and the effects of the temperature distribution along the emitter. The maximum power output achieved from the converter at an emitter temperature of 1942 K was 178 W at 0.48 V output, with a power density of 1.95 W/sq cm and an efficiency of 5.5%. The static characteristics also indicated that, with a constant power input, the converter power output does not vary with the output voltage as a result of self-adjustment of the emitter temperature. An investigation of the effects of the temperature distribution along the emitter length showed a 33% improvement in the converter output power with a flattening of the emitter temperature.

Shimada, K.↗

Overview of NASA Lewis Research Center free-piston Stirling engine technology activities applicable to space power systems

Free piston Stirling technology is applicable for both solar and nuclear powered systems. As such, the Lewis Research Center serves as the project office to manage the newly initiated SP-100 Advanced Technology Program. This five year program provides the technology push for providing significant component and subsystem options for increased efficiency, reliability and survivability, and power output growth at reduced specific mass. One of the major elements of the program is the development of advanced power conversion concepts of which the Stirling cycle is a viable candidate. Under this program the research findings of the 25 kWe opposed piston Space Power Demonstrator Engine (SPDE) are presented. Included in the SPDE discussions are initial differences between predicted and experimental power outputs and power output influenced by variations in regenerators. Projections are made for future space power requirements over the next few decades. And a cursory comparison is presented showing the mass benefits that a Stirling system has over a Brayton system for the same peak temperature and output power.

Slaby, J. G.↗

Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers

The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.

Lin, Robert H.↗

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗

Investigation of RF excited CW CO2 waveguide lasers

The RF excited 2 to 3W CW CO2 waveguide lasers with lifetimes of the order of 10(4) to 2.10(4) hours were produced. This was achieved with CO and N2 bearing gas mixtures and with internal as well as external discharge electrodes. It is noted that these tests were conducted with unstabilized lasers which drift around in their signatures. The average power output was reduced to about one half of the highest peak power output in the signature. One of the lasers, no. 1.1, still shows 60% of its original output power after it was cycled on and off every 10 minutes for more than 50,000 times. The starting voltage and driving point impedance of the RF excited gas discharge structure for different gas pressures and mixtures were measured. These data will serve as a basis for the matching and starting network optimization. The second laser body was frit and indium sealed. To our a vacuum leak between the bore and electrode holes was noted. The leak seems to be due to a defect or crack in the BeO body.

Hochuli, U.↗

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Ngo, Catherine↗

Gas-laser power monitor

Device attaches simply to front of laser housing for continuous monitoring of power output. Monitor is calibrated to read either total output or power generated in test volume. It is fabricated from four black-anodized aluminum parts; crown glass positioned at Brewster angle reflects 0.33 percent of beam onto photodiode calibrated for electrical output proportional to laser power. Unlike conventional calorimeter, monitor does not interrupt laser beams, and fast-response diode allows instantaneous tracking of power fluctuations.

Russ, C. E., Jr.↗

Teal Cycle Ergometer Vibration Isolation and Stabilization System Human-in-the-Loop Ground Evaluation for Long-Duration Spaceflight

Purpose: To counter the deleterious effects of weightlessness on the cardiopulmonary system, astronauts living on the International Space Station exercise on a variety of countermeasure equipment including the Cycle Ergometer Vibration Isolation and Stabilization System (CEVIS). Operational since 2001, the onboard CEVIS will be replaced by a new model, known as Teal CEVIS (TC). As a part of ground evaluation, TC hardware underwent human-in-the-loop (HITL) testing to verify the TC hardware produces workloads that elicit physiologic responses comparable to a laboratory cycle ergometer (LAB). Methods: Seven subjects (5 M/2 F) performed submaximal cycle ergometer testing with indirect calorimetry measures on TC and LAB on separate test days. Testing consisted of graded 30 watt increases in workload until subjects reached 85% of age-predicted max heart rate (HR). Exercise outcomes included rate of oxygen uptake (VO2; liters/min), rate of energy expenditure (REE; kcal/min), and HR (beats/min). Linear mixed models (LMM) were fitted to compare VO2, REE, and HR responses between devices across power outputs with fixed effects for power (P) and device (D) and with random effects for subject. LMM effect coefficients (β), std errors (SE), pseudo-partial R2 of effects (pR2), and model likelihood ratio statistics (χ2, Pr(> chisq); α<.05) are provided. Results: LMM main effects for P and D were observed for VO2 (βp=.0107, SE = .0002, pR2=0.97; βd = -0.075, SE = 0.019, pR2=0.14; χ2(1)= 13.57, p<.001), such that VO2 was higher across stages on TC. Main effects of P and D were observed for REE (βp= .0586, SE = 0.001, pR2= 0.97; βd = -0.33208, SE = 0.099, pR2= 0.056; χ2(1)=10.481, p < .01), such that REE was higher across power outputs on TC. A P x D interaction was observed for HR, along with main effects for P and D (βp x d =-0.048, SE = 0.02, pR2=0.048; βp= 0.42, SE = 0.016, pR2=0.87; χ2(1) = 5.398, p = 0.02), such that higher workloads elicited a greater difference in HR between devices. Conclusions: HITL results show, TC elicits greater physiologic responses across power outputs compared to LAB. However, pR2 for device effects show small differences between devices. Therefore, TC can be expected to provide appropriate physiological stimulus across workloads and be considered a reliable tool to mitigate the effects of weightlessness.

Cycle Ergometer Vibration and Isolation System↗

Using Maximal Isometric Force to Determine the Optimal Load for Measuring Dynamic Muscle Power

Maximal power output occurs when subjects perform ballistic exercises using loads of ~30-50% of one-repetition maximum (1-RM). However, performing 1-RM testing prior to power measurement requires considerable time, especially when testing involves multiple exercises. Maximal isometric force (MIF), which requires substantially less time to measure than 1-RM, might be an acceptable alternative for determining the optimal load for power testing. PURPOSE: To determine the optimal load based on MIF for maximizing dynamic power output during leg press and bench press exercises. METHODS: Twenty healthy volunteers (12 men and 8 women; mean +/- SD age: 31+/-6 y; body mass: 72 +/- 15 kg) performed isometric leg press and bench press movements, during which MIF was measured using force plates. Subsequently, subjects performed ballistic leg press and bench press exercises using loads corresponding to 20%, 30%, 40%, 50%, and 60% of MIF presented in randomized order. Maximal instantaneous power was calculated during the ballistic exercise tests using force plates and position transducers. Repeated-measures ANOVA and Fisher LSD post hoc tests were used to determine the load(s) that elicited maximal power output. RESULTS: For the leg press power test, six subjects were unable to be tested at 20% and 30% MIF because these loads were less than the lightest possible load (i.e., the weight of the unloaded leg press sled assembly [31.4 kg]). For the bench press power test, five subjects were unable to be tested at 20% MIF because these loads were less than the weight of the unloaded aluminum bar (i.e., 11.4 kg). Therefore, these loads were excluded from analysis. A trend (p = 0.07) for a main effect of load existed for the leg press exercise, indicating that the 40% MIF load tended to elicit greater power output than the 60% MIF load (effect size = 0.38). A significant (p . 0.05) main effect of load existed for the bench press exercise; post hoc analysis indicated that the effect of load on power output was: 30% > 40% > 50% = 60%. CONCLUSION: Loads of 40% and 30% of MIF elicit maximal power output during dynamic leg presses and bench presses, respectively. These findings are similar to those obtained when loading is based on 1-RM.

Spiering, Barry A.↗

Converter provides constant electrical power at various output voltages

Power converter, using an inverted flyback technique, transfers electrical energy at a constant rate from a solar cell source to a number of individual batteries, which are to be charged one at a time. The converter inverts the polarity of the solar cell source and provides the correct charging voltage.

Paulkovich, J.↗

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Ma, Zhenqiang↗

Silicon Carbide Radioisotope Batteries

The substantial radiation resistance and large bandgap of SiC semiconductor materials makes them an attractive candidate for application in a high efficiency, long life radioisotope battery. To evaluate their potential in this application, simulated batteries were constructed using SiC diodes and the alpha particle emitter Americium Am-241 or the beta particle emitter Promethium Pm-147. The Am-241 based battery showed high initial power output and an initial conversion efficiency of approximately 16%, but the power output decayed 52% in 500 hours due to radiation damage. In contrast the Pm-147 based battery showed a similar power output level and an initial conversion efficiency of approximately 0.6%, but no degradation was observed in 500 hours. However, the Pm-147 battery required approximately 1000 times the particle fluence as the Am-242 battery to achieve a similar power output. The advantages and disadvantages of each type of battery and suggestions for future improvements will be discussed.

Rybicki, George C.↗

Design and analysis of optically pumped submillimeter waveguide maser amplifiers and oscillators

The design and experimental measurements are described of an optically pumped far-infrared (FIR) waveguide maser; preliminary measurements on a FIR waveguide amplifier are presented. The FIR maser was found to operate satisfactorily in a chopped CW mode using either methanol (CH3OH) or acetonitrile (CH3CN) as the active molecule. Two other gases, difluoroethane and difluoroethylene, produced an unstable output with high threshold and low output power when operated in the chopped CW mode. Experimental measurements include FIR output versus cavity length, output beam pattern, output power versus pressure, and input power. The FIR output was the input to an amplifier which was constructed similar to the oscillator. An increase of 10% in output power was noted on the 118.8 microns line of methanol.

Galantowicz, T. A.↗

The 30 GHz solid state amplifier for low cost low data rate ground terminals

This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPATT amplifier not only met or exceeded all the program objectives, but also possesses the ability to operate in the pulse mode, which was not called for in the original contract requirements. The ability to operate in the pulse mode is essential for TDMA (Time Domain Multiple Access) operation. An output power of 20 W was achieved with a 1-dB instantaneous bandwidth of 260 MHz. The amplifier has also been tested in pulse mode with 50% duty for pulse lengths ranging from 200 ns to 2 micro s with 10 ns rise and fall times and no degradation in output power. This pulse mode operation was made possible by the development of a stable 12-diode power combiner/amplifier and a single-diode pulsed driver whose RF output power was switched on and off by having its bias current modulated via a fast-switching current pulse modulator. Essential to the overall amplifier development was the successful development of state-of-the-art silicon double-drift IMPATT diodes capable of reproducible 2.5 W CW output power with 12% dc-to-RF conversion efficiency. Output powers of as high as 2.75 W has been observed. Both the device and circuit design are amenable to low cost production.

Ngan, Y. C.↗

Parametric testing of an externally configured thermionic converter

A 25.4-cm long externally configured converter was performance tested by electrically heating the emitter to simulate reactor thermal power input. The measured maximum output power was limited by the maximum input power available from the electric RF induction heater. With maximum heater input power, the converter electric output was 178 W (1.95 W/sq cm) at an emitter temperature of 1946 K. This electric output power was smaller than expected. A reactor-core-length (25.4-cm long) cylindrical thermionic converter power and maintaining the emitter-to-collector gap without shorting are of major importance to the feasibility of a 25.4-cm-long reactor fuel element. The emitter of the converter is located externally to the collector to increase the fuel-volume fraction and to allow redundant collector cooling in a reactor configuration.

Shimada, K.↗