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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

From MEMRISTOR to MEMImpedance device

The behavior of the capacitance switching of HfO{sub 2} Resistive non-volatile Memories is investigated in view of realizing a MEMImpedance (MEM-Z) device. In such a Metal Insulator Metal structure, the impedance value can be tuned by the adjustment of both resistance and capacitance values. We observe a strong variation of capacitance from positive to negative values in a single layer Metal Insulator Metal device made of HfO{sub 2} deposited by Atomic Layer Deposition, but unfortunately no memory effect is observed. However, in the case of a two layer structure, a device has been obtained with a memory effect where both resistance and capacitance values can be tuned simultaneously, with a variation of capacitance down to negative values to get an inductive behavior. Negative capacitance values are observed for voltage values near SET voltage. A schematic model based on shaped oxygen vacancy density is proposed to account for this capacitance variation. The oxygen vacancies can be either isolated or connected in the bulk of the oxide.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands

The Negative Differential Capacitance (NDC) effect on Ti Schottky diodes formed on n-type Silicon samples with embedded Germanium Quantum Dots (QDs) is observed and reported. The NDC-effect is detected using capacitance-voltage (CV) method at temperatures below 200 K. It is explained by the capture of electrons in Germanium QDs. Our measurements reveal that each Ge QD captures in average eight electrons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Computational insight into the capacitive performance of graphene edge planes

Recent experiments have shown that electric double-layer capacitors utilizing electrodes consisting of graphene edge plane exhibit higher capacitance than graphene basal plane. However, theoretical understanding of this capacitance enhancement is still limited. Here we applied a self-consistent joint density functional theory calculation on the electrode/electrolyte interface and found that the capacitance of graphene edge plane depends on the edge type: zigzag edge has higher capacitance than armchair edge due to the difference in their electronic structures. We further examined the quantum, dielectric, and electric double-layer (EDL) contributions to the total capacitance of the edge-plane electrodes. Classical molecular dynamics simulation found that the edge planes have higher EDL capacitance than the basal plane due to better adsorption of counter-ions and higher solvent accessible surface area. Finally, our work therefore has elucidated the capacitive energy storage in graphene edge planes that take into account both the electrode's electronic structure and the EDL structure.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric

A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is necessary.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Mutual capacitance of liquid conductors in deformable tactile sensing arrays

Advances in highly deformable electronics are needed in order to enable emerging categories of soft computing devices ranging from wearable electronics, to medical devices, and soft robotic components. The combination of highly elastic substrates with intrinsically stretchable conductors holds the promise of enabling electronic sensors that can conform to curved objects, reconfigurable displays, or soft biological tissues, including the skin. Here, we contribute sensing principles for tactile (mechanical image) sensors based on very low modulus polymer substrates with embedded liquid metal microfluidic arrays. The sensors are fabricated using a single-step casting method that utilizes fine nylon filaments to produce arrays of cylindrical channels on two layers. The liquid metal (gallium indium alloy) conductors that fill these channels readily adopt the shape of the embedding membrane, yielding levels of deformability greater than 400%, due to the use of soft polymer substrates. We modeled the sensor performance using electrostatic theory and continuum mechanics, yielding excellent agreement with experiments. Using a matrix-addressed capacitance measurement technique, we are able to resolve strain distributions with millimeter resolution over areas of several square centimeters.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
DOE OSTI2015

Reduced graphene oxide mid-infrared photodetector at 300 K

We report on uncooled mid-infrared photovoltaic responses at 300 K arising in heterojunctions of reduced graphene oxide with p-Si. Two major photoresponse spectral peaks are observed, one in the near infrared starting at 1.1 μm corresponding to electron-hole pair generation in the Si substrate, and another at wavelengths below 2.5 μm, arising from properties of the reduced graphene oxide-Si heterojunction. Our analysis of the current-voltage characteristics at various temperatures suggests that the two materials form a type-II (broken-gap) heterojunction, with a characteristic transition between direct tunneling to field emission, to over-the-barrier excitation with increasing reverse voltage. Illumination was found to affect the onset of the transition between direct tunneling and field-emission, suggesting that the mid infrared response results from the excitation of minority carriers (electrons) from the Si and their collection in the reduced graphene oxide contact. The photoresponse near 1.1 μm showed a time constant at least five times faster than the one at 2.5 μm, which points to surface defects as well as high series resistance and capacitance as potentially limiting factors in this mode of operation. With proper device engineering considerations, these devices could be promising as a graphene-based platform for infrared sensing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Large electron concentration modulation using capacitance enhancement in SrTiO{sub 3}/SmTiO{sub 3} Fin-field effect transistors

Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (∼3.3 × 10{sup 14 }cm{sup −2}) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO{sub 3}/GdTiO{sub 3} or SrTiO{sub 3}/SmTiO{sub 3}) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60 nm SrTiO{sub 3}/5 nm SmTiO{sub 3} thin films grown by hybrid molecular beam epitaxy. We find that the FinFETs exhibit higher gate capacitance compared to planar FETs. By scaling down the SrTiO{sub 3}/SmTiO{sub 3} fin widths, we demonstrate further gate capacitance enhancement, almost twice compared to the planar FETs. In the FinFETs with narrowest fin-widths, we demonstrate a record 2DEG electron concentration modulation of ∼2.4 × 10{sup 14 }cm{sup −2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Observation of genuine wave vector (k or β) gap in a dynamic transmission line and temporal photonic crystals

By definition, a temporal photonic crystal (TPC) has a permittivity ε(t) that varies periodically with time. We prove that, in the long wavelength limit, a TPC is accurately mimicked by a dynamic transmission line (DTL) having a capacitance (inductance) per unit length equal to ε(t) (μ). Employing a DTL in the microwave region, we measured the photonic band structure, which results to display a genuine wave vector (k or β) gap, in very good agreement with our theoretical model and the equivalent TPC.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Memcapacitive characteristics in reactive-metal (Mo, Al)/HfO{sub X}/n-Si structures through migration of oxygen by applied voltage

Memcapacitive characteristics were investigated in metal-oxide-semiconductor (MOS) structure of reactive electrode (Mo, Al) and hafnium oxide (HfO{sub X}) on n-type Si substrate. The capacitance-voltage curves exhibited sequentially changing capacitance with memory function as repeating voltage sweeps, featured the memcapacitive behaviors. The saturation capacitance was decreased by repeating +V sweeps, while barely changed by −V sweeps. Also, the capacitance-time curves disclosed the same tendency. However, the MOS structure with inert Pt electrode did not show the capacitance change. The memcapacitive behaviors were induced by the migration of oxygen ions from HfO{sub X} to reactive electrodes by applied voltage, which altered the permittivity of HfO{sub X}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO{sub 2} in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Anomalous large electrical capacitance of planar microstructures with vanadium dioxide films near the insulator-metal phase transition

The temperature dependence of electrical capacitance of planar microstructures with vanadium dioxide (VO{sub 2}) film near the insulator-metal phase transition has been investigated at the frequency of 1 MHz. Electrical capacitance measurements of the microstructures were performed by the technique based on the using of a two-terminal resistor-capacitor module simulating the VO{sub 2} layer behavior at the insulator-metal phase transition. At temperatures 325–342 K, the anomalous increase in microstructures capacitance was observed. Calculation of electric field in the microstructure showed that VO{sub 2} relative permittivity (ε) reaches ∼10{sup 8} at the percolation threshold. The high value of ε can be explained by the fractal nature of the interface between metal and insulator clusters formed near the insulator-metal phase transition.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

ZrO{sub 2} and HfO{sub 2} dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

The electrical properties of ZrO{sub 2} and HfO{sub 2} gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance–voltage (C–V) measurements exhibit a total trap density profile with a minimum of 1 × 10{sup 12 }cm{sup −2} eV{sup −1} and 4 × 10{sup 12 }cm{sup −2} eV{sup −1} for ZrO{sub 2} and HfO{sub 2}, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C–V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Multimodal vibration damping using energy transfer

The vibration control using the piezoelectric elements is an area interesting for many industrial sectors. Within this framework, we propose an improved control technique based in synchronized switch damping by energy transfer. It realizes the energy transfer using storage capacitances and switches synchronized with the structure modal coordinates or piezo-voltages. These switches produce either a voltage inversion on the piezoelements for damping or energy extraction purposes, or oscillating discharges between the piezoelements and the storage capacitances for energy transfer. This new method has an improvement in the modal damping technology SSDI-Max. Their performance is simulated with a model representative of a clamped plate with four piezoelectric elements coupled with the structural modes while taking into account realistic transfer losses. The damping effect is simulated in multi-modal with pulse or multi-sine excitation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electrodeposition of Fe{sub 2}O{sub 3} nanoparticles and its supercapacitive properties

Fe{sub 2}O{sub 3} metal oxide nanoparticles are synthesized by electrodeposition method on stainless steel substrate. The crystal structure and surface morphological studies of the obtained metal oxide thin film are carried out by using X-ray diffraction (XRD) technique and Scanning Electron Microscopy (SEM) respectively. The electrochemical properties of Fe{sub 2}O{sub 3} thin film like Cyclic Voltammetry (CV), Galvonostatic Charge-Discharge (GCD) and Electrochemical Impedance Spectroscopy (EIS) are studied in a bath of 0.5 M Na{sub 2}SO{sub 4} as electrolyte. The observed specific capacitance shows improved values 135 Fg{sup −1} at 5 mVs{sup −1} scan rate. The electrochemical stability of Fe{sub 2}O{sub 3} electrode is investigated using cyclic voltammetry for 1000 cycles at a scan rate 50 mVs{sup −1}. The Fe{sub 2}O{sub 3} electrode exhibits superior cycling stability with only 4-5% capacitance loss after one thousand cycles. The values of specific power and specific energy of Fe{sub 2}O{sub 3} electrode obtained from Galvonostatic charge discharge studies are 2250 W.kg{sup −1} and 63.15 Wh.kg{sup −1} respectively at current density 1 A/g. From all the electrochemical properties of Fe{sub 2}O{sub 3} electrode, it indicates that it will be promising electrode material for supercapacitor application.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Validation Studies using ELK and the Open-Source MOOSE Framework Application Zapdos for Electromagnetic Coupled Plasma Simulation

An open source simulation platform that captures electromagnetics, plasma chemistry, and fluid treatment of the plasma domain would be a powerful tool for studying low temperature plasma (LTP) phenomena. Within the Multiphysics Object-Oriented Simulation Environment (MOOSE) open source framework, ELK, CRANE, and Zapdos are combined to provide open source simulation capability for the LTP community. This talk presents continued validation of the general electromagnetic (EM) simulation tool ELK (Electromagnetic Library for Kinetics & fluids). Previous validation efforts focused on simulating standard waveguide and antenna benchmarks in vacuum and linear dielectrics, but ELK has since been coupled with the MOOSE-based plasma fluid application Zapdos [Lindsay et al 2016 J. Phys. D: Appl. Phys. 49 235204] to perform radio-frequency (rf) capacitively coupled plasma (CCP) system simulation. Plasma validation efforts initially focused on electrostatic benchmarks to demonstrate ELK-Zapdos code coupling and then moved to electromagnetic benchmarks based on interesting geometries and conditions (VHF effects in a CCP reactor, microwave heating, etc.). Results and progress in these efforts will be summarized and discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗