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We have performed low-temperature magnetoluminescence, far-infrared cyclotron resonance, and magneto-transport measurements on narrow (4.5 nm) GaAs/Al 0.25 Ga 0.75 As single quantum-wells. The ground state in-plane valence band was found to be light and very nonparabolic, i.e., at zone center, the valence band mass is m v ≈ 0. 1 and for E f ≈ 10 meV, m v ≈ 0.25.
We investigate the unexpected high-energy electroluminescence (EL) peaks observed in long-wavelength InGaN light-emitting diodes (LEDs) with ground state emission peaks between ~495 and 685 nm by studying the EL spectra of LEDs with varying quantum well (QW) thicknesses and indium compositions. In addition to the ground state emission, two high-energy emission peaks were observed in the LEDs with thick QWs and high indium compositions. The less energetic high-energy emission peak (2.4–2.6 eV) is attributed to the optical transitions involving excited states. Factors influencing the excited state transitions, such as the QW thickness and indium compositions, were also examined by simulations to better understand the occurrence of these transitions. The more energetic high-energy emission peak (2.8–3.1 eV) originates from V-defect sidewalls and was verified through micro-photoluminescence measurements. Identification of the high-energy emission peaks is essential as it enables targeted epitaxial or growth optimizations to minimize or eliminate these undesirable emission peaks. In conclusion, this work demonstrates the importance of using thin QWs to suppress the unwanted high-energy emissions due to excited state transitions and V-defect sidewalls for long-wavelength InGaN LEDs.
Optical antenna resonators enable control of light‐matter interactions on the nano‐scale via electron–photon hybrid states in strong coupling. Specifically, mid‐infrared (MIR) nano‐antennas coupled to saturable intersubband transitions in multi‐quantum‐well (MQW) semiconductor heterostructures allow for the coupling strength to be tuned through antenna resonance and field intensity. Here, in this study, tip‐enhanced nano‐scale variation of antenna‐MQW coupling across the antenna is demonstrated, with a spatially‐dependent coupling strength $g_{\textrm{aq}}$ varying from 73 (strong coupling) to 24 cm -1 (weak coupling). This behavior is modeled based on the spatially dependent local constructive and destructive interference between tip and antenna fields. Using a quantum‐mechanical density‐matrix model of the MQW system with its designed values of transition dipole moment, doping density, and population decay time, the picosecond IR pulse coupling to intersubband transitions and the associated tip induced strong‐field saturation effects are described. These results present a new regime of nonlinear IR light‐matter control based on the dynamic manipulation of quantum hybrid states on the nanoscale and in the infrared, with a perspective regarding extension to molecular vibrations.
Surface defects and organic surface-capping ligands affect the photoluminescence properties of semiconductor quantum dots (QDs) by altering the rates of competing nonradiative relaxation processes. In this study, broadband two-dimensional electronic spectroscopy reveals that absorption of light by QDs prepares vibronic excitons, excited states derived from quantum coherent mixing of the core electronic and ligand vibrational states. Rapidly damped coherent wavepacket motions of the ligands are observed during hot-carrier cooling, with vibronic coherence transferred to the photoluminescent state. Furthermore, these findings suggest a many-electron, molecular theory for the electronic structure of QDs, which is supported by calculations of the structures of conical intersections between the exciton potential surfaces of a small ammonia-passivated model CdSe nanoparticle.
Cavity quantum electrodynamics (QED) is a powerful tool in quantum science, enabling preparation of nonclassical states of light and scalable entanglement of many atoms coupled to a single field mode. While the most coherent atom-photon interactions have been achieved using superconducting millimeter-wave cavities coupled to Rydberg atoms, these platforms so far lack the optical access required for trapping and addressing individual atomic qubits. We present a millimeter-wave Fabry-Pérot cavity with finesse 5.8(1) ×10 7 at a temperature of 1 K providing generous transverse optical access (numerical aperture 0.56). Conflicting goals of strong atom-photon coupling and optical access motivate a near-confocal geometry. Close to confocality, however, postparaxial corrections to the cavity spectrum introduce unexpected degeneracies between transverse modes, leading to excess cavity loss. Modeling these corrections allows for tuning the cavity geometry to evade this loss, producing a high finesse that will enable cavity QED experiments with trapped atoms deep in the strong coupling regime.
We investigate the bulk photovoltaic effect, which rectifies light into electric current, in a collective quantum state with correlation driven electronic ferroelectricity. We show via explicit real-time dynamical calculations that the effect of the applied electric field on the electronic order parameter leads to a strong enhancement of the bulk photovoltaic effect relative to the values obtained in a conventional insulator. The enhancements include both resonant enhancements at sub-band-gap frequencies, arising from excitation of optically active collective modes, and broadband enhancements arising from nonresonant deformations of the electronic order. The deformable electronic order parameter produces an injection current contribution to the bulk photovoltaic effect that is entirely absent in a rigid-band approximation to a time-reversal symmetric material. Furthermore, our findings establish that correlation effects can lead to the bulk photovoltaic effect and demonstrate that the collective behavior of ordered states can yield large nonlinear optical responses.
Abstract Heterogeneously integrated hybrid photonic crystal cavities enable strong light–matter interactions with solid state, optically addressable quantum memories. A key challenge to realizing high quality factor ( Q ) hybrid photonic crystals is the reduced index contrast on the substrate compared to suspended devices in air. This challenge is particularly acute for color centers in diamond because of diamond’s high refractive index, which leads to increased scattering loss into the substrate. Here, we develop a design methodology for hybrid photonic crystals utilizing a detailed understanding of substrate-mediated loss, which incorporates sensitivity to fabrication errors as a critical parameter. Using this methodology, we design robust, high-Q, GaAs-on-diamond photonic crystal cavities, and by optimizing our fabrication procedure, we experimentally realize cavities with Q approaching 30,000 at a resonance wavelength of 955 nm.
Here, the complexity of many-body quantum wave functions is a central aspect of several fields of physics and chemistry where nonperturbative interactions are prominent. Artificial neural networks (ANNs) have proven to be a flexible tool to approximate quantum many-body states in condensed matter and chemistry problems. In this work we introduce a neural-network quantum state ansatz to model the ground-state wave function of light nuclei, and approximately solve the nuclear many-body Schrodinger equation. Using efficient stochastic sampling and optimization schemes, our approach extends pioneering applications of ANNs in the field, which present exponentially scaling algorithmic complexity. We compute the binding energies and point-nucleon densities of A ≤ 4 nuclei as emerging from a leading-order pionless effective field theory Hamiltonian. We successfully benchmark the ANN wave function against more conventional parametrizations based on two- and three-body Jastrow functions, and virtually exact Green's function Monte Carlo results.
An ensemble of atoms can operate as a quantum sensor by placing atoms in a superposition of two different states. Upon measurement of the sensor, each atom is individually projected into one of the two states. Creating quantum correlations between the atoms, that is entangling them, could lead to resolutions surpassing the standard quantum limit set by projections of individual atoms. Large amounts of entanglement involving the internal degrees of freedom of laser-cooled atomic ensembles have been generated in collective cavity quantum-electrodynamics systems, in which many atoms simultaneously interact with a single optical cavity mode. Here we report a matter-wave interferometer in a cavity quantum-electrodynamics system of 700 atoms that are entangled in their external degrees of freedom. In our system, each individual atom falls freely under gravity and simultaneously traverses two paths through space while entangled with the other atoms. In this work, we demonstrate both quantum non-demolition measurements and cavity-mediated spin interactions for generating squeezed momentum states with directly observed sensitivity $3.4^{+1.1}_{–0.9}$dB and $2.5^{+0.6}_{–0.6}$dB below the standard quantum limit, respectively. We successfully inject an entangled state into a Mach–Zehnder light-pulse interferometer with directly observed sensitivity $1.7^{+0.5}_{–0.5}$dB below the standard quantum limit. The combination of particle delocalization and entanglement in our approach may influence developments of enhanced inertial sensors, searches for new physics, particles and fields, future advanced gravitational wave detectors and accessing beyond mean-field quantum many-body physics.
Small metal-rich semiconducting quantum dots (QDs) are promising for solid-state lighting and single-photon emission due to their highly tunable yet narrow emission line widths. Nonetheless, the anionic ligands commonly employed to passivate these QDs exert a substantial influence on the optoelectronic characteristics, primarily owing to strong electron–phonon interactions. In this work, we combine time-domain density functional theory and nonadiabatic molecular dynamics to investigate the excited charge carrier dynamics of Cd 28 Se 17 X 22 QDs (X = HCOO – , OH – , Cl – , and SH – ) at ambient conditions. These chemically distinct but regularly used molecular groups influence the dynamic surface-ligand interfacial interactions in Cd-rich QDs, drastically modifying their vibrational characteristics. The strong electron–phonon coupling leads to substantial transient variations at the band edge states. The strength of these interactions closely depends on the physicochemical characteristics of passivating ligands. Consequently, the ligands largely control the nonradiative recombination rates and emission characteristics in these QDs. Our simulations indicate that Cd 28 Se 17 (OH) 22 has the fastest nonradiative recombination rate due to the strongest electron–phonon interactions. Conversely, QDs passivated with thiolate or chloride exhibit considerably longer carrier lifetimes and suppressed nonradiative processes. The ligand-controlled electron–phonon interactions further give rise to the broadest and narrowest intrinsic optical line widths for OH and Cl-passivated single QDs, respectively. Finally, obtained computational insights lay the groundwork for designing appropriate passivating ligands on metal-rich QDs, making them suitable for a wide range of applications, from blue LEDs to quantum emitters.
We report topological photonics is an emerging platform to study light-matter interactions with promising features such as robust edge state transmission that could be advantageous for quantum information applications. However, applying common topological photonic designs for visible wavelength light-matter interactions is challenging because materials compatible with the visible spectrum have lower refractive index contrasts. We design and demonstrate a novel valley Hall topological photonic crystal that can support a complete topological band gap in the visible spectrum. We also show an overetch procedure can be used to reduce the leakage loss common for low index contrast materials. To demonstrate these advantages, we fabricate topological photonic devices following these design principles and show that edge states at energies in the complete band gap have robust transmission around sharp corners. The compatibility of this photonic structure with straightforward fabrication methods will facilitate the study of interactions between topologically nontrivial photons and nanomaterials active in the visible spectrum.
Bosonic quantum error correction has proven to be a successful approach for extending the coherence of quantum memories, but to execute deep quantum circuits, high-fidelity gates between encoded qubits are needed. To that end, we present a family of error-detectable two-qubit gates for a variety of bosonic encodings. From a new geometric framework based on a “Bloch sphere” of bosonic operators, we construct ZZ L (θ) and exponential-swap(θ) gates for the binomial, four-legged cat, dual-rail, and several other bosonic codes. The gate Hamiltonian is simple to engineer, requiring only a programmable beam splitter between two bosonic qubits and an ancilla dispersively coupled to one qubit. This Hamiltonian can be realized in circuit QED hardware with ancilla transmons and microwave cavities. The proposed theoretical framework was developed for circuit QED but is generalizable to any platform that can effectively generate this Hamiltonian. Crucially, one can also detect first-order errors in the ancilla and the bosonic qubits during the gates. We show that this allows one to reach error-detected gate fidelities at the 0.01% level with today’s hardware, limited only by second-order hardware errors.
Obtaining large field enhancement in low-refractive-index dielectric materials is highly relevant to many photonic and quantum optics applications. However, confining light in these materials is challenging, owing to light leakage through coupling to continuum modes in the surrounding environment. Here, we investigate the possibility of achieving high quality factors in low-index dielectric resonators through the bound states in the continuum (BIC). Our simulations demonstrate that destructive interference between leaky modes can be achieved by tuning the geometrical parameters of the resonator arrays, leading to the emergence of quasi-BIC in resonators that have a small index contrast to the underlying substrates. The resultant large field enhancement gives rise to giant quality factors and Purcell effects. By introducing vertical mirror symmetry, the quasi-BIC can be tuned into an ideal BIC. In addition, the quasi-BIC can modify the emission patterns of the coupled emitters, rendering highly directional and focused far-field emission. These findings may provide a path for the practical implementation of photonic and quantum devices based on low-index dielectric materials.
Interactions of quantum materials with strong-laser fields can induce exotic nonequilibrium electronic states. Monolayer transition-metal dichalcogenides, a new class of direct-gap semiconductors with prominent quantum confinement, offer exceptional opportunities toward Floquet engineering of quasiparticle electron-hole states, or excitons. Strong-field driving has a potential to achieve enhanced control of electronic band structure, thus a possibility to open a new realm of exciton light-matter interactions. However, experimental implementation of strongly-driven excitons has so far remained out of reach. Here, we use mid-infrared laser pulses below the optical bandgap to excite monolayer tungsten disulfide up to a field strength of 0.3 V/nm, and demonstrate strong-field light dressing of excitons in the excess of a hundred millielectronvolt. Our high-sensitivity transient absorption spectroscopy further reveals formation of a virtual absorption feature below the 1s-exciton resonance, which is assigned to a light-dressed sideband from the dark 2p-exciton state. Quantum-mechanical simulations substantiate the experimental results and enable us to retrieve real-space movies of the exciton dynamics. Here, this study advances our understanding of the exciton dynamics in the strong-field regime, and showcases the possibility of harnessing ultrafast, strong-field phenomena in device applications of two-dimensional materials.
We show that for a class of quantum light spectroscopy (QLS) experiments using n = 0, 1, 2, ··· classical light pulses and an entangled photon pair (a biphoton state) where one photon acts as a reference without interacting with the matter sample, identical signals can be obtained by replacing the biphotons with classical-like coherent states of light, where these are defined explicitly in terms of the parameters of the biphoton states. An input-output formulation of quantum nonlinear spectroscopy is used to prove this equivalence. We demonstrate the equivalence numerically by comparing a classical pump–quantum probe experiment with the corresponding classical pump–classical probe experiment. This analysis shows that understanding the equivalence between entangled biphoton probes and carefully designed classical-like coherent state probes leads to quantum-inspired classical experiments that yield equivalent signals and provides insights for the future design of QLS experiments that could provide a true quantum advantage.
A Heisenberg uncertainty relation is derived for spatially-gated electric ΔE and magnetic ΔH field fluctuations. The uncertainty increases for small gating sizes, which implies that in confined spaces, the quantum nature of the electromagnetic field must be taken into account. Optimizing the state of light to minimize ΔE at the expense of ΔH and vice versa should be possible. Spatial confinements and quantum fields may alternatively be realized without gating by interaction of the field with a nanostructure. Possible applications include nonlinear spectroscopy of nanostructures and optical cavities and chiral signals.
Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.
Recently, log-periodic quantum oscillations have been detected in the topological materials zirconium pentatelluride (ZrTe 5 ) and hafnium pentatelluride (HfTe 5 ), displaying an intriguing discrete scale invariance (DSI) characteristic. In condensed materials, the DSI is considered to be related to the quasi-bound states formed by massless Dirac fermions with strong Coulomb attraction, offering a feasible platform to study the long-pursued atomic-collapse phenomenon. Here, we demonstrate that a variety of atomic vacancies in the topological material HfTe 5 can host the geometric quasi-bound states with a DSI feature, resembling an artificial supercritical atom collapse. The density of states of these quasi-bound states is enhanced, and the quasi-bound states are spatially distributed in the “orbitals” surrounding the vacancy sites, which are detected and visualized by low-temperature scanning tunneling microscope/spectroscopy. By applying the perpendicular magnetic fields, the quasi-bound states at lower energies become wider and eventually invisible; meanwhile, the energies of quasi-bound states move gradually toward the Fermi energy (E F ). These features are consistent with the theoretical prediction of a magnetic field–induced transition from supercritical to subcritical states. The direct observation of geometric quasi-bound states sheds light on the deep understanding of the DSI in quantum materials.