Search NASA⌕ Search

SEARCH · Search NASA

Results for “rear contact”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

83 records · Page 5

Characterization of Field-Exposed Photovoltaic Modules Featuring Signs of Contact Degradation

Here, this work investigates several photovoltaic (PV) modules that have shown signs of metal contact corrosion due to field exposure in a hot and humid climate. This includes two multicrystalline silicon aluminum back surface field systems with 10 and 14 years of exposure and one monocrystalline silicon passivated emitter and rear cell system with four years of exposure. A comprehensive, multiscale characterization process is used to evaluate these PV modules in great detail. Current–voltage (I−V), Suns-V OC measurements, electroluminescence imaging, infrared imaging, and ultraviolet fluorescence imaging were performed, and locations of interest were cored and analyzed using cross-sectional scanning electron microscopy (SEM). A rigorous, quantitative analysis procedure for the cross-sectional SEM images is proposed and implemented. Careful characterization does reveal that some of these PV modules do indeed exhibit the same classic signs of acetic-acid-based corrosion of the glass frit that is present at the silver/silicon interface, which have been observed previously in PV modules exposed to damp heat in an environmental chamber.

14 SOLAR ENERGY↗

Self-Aligned Selective Area Front Contacts on Poly -Si/SiO x Passivating Contact c -Si Solar Cells

We report both polarity poly-Si/SiO x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN x ,Al 2 O 3 , and stacks thereof) to study the repassivation of the etched n + surface, and find that an SiN x /Al 2 O 3 passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN x layer, and excellent chemical passivation property from Al 2 O 3 in the form of atomic H. We demonstrate a front/back poly-Si/SiO x passivating contact device, with an open-circuit voltage (V oc ) of 690 mV, short-circuit current density (J sc ) of 39.8 mA/cm 2 , fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

14 SOLAR ENERGY↗

Development of a co-anneal process for double-side TOPCon precursor fabricated by ex-situ POCI3 and APCVD boron diffusion

The aim of this study was to develop a simple and industrially attractive co-anneal process to fabricate a high-quality DS-TOPCon precursor with textured n-TOPCon on front and planar p- TOPCon on rear by ex-situ POCI3 and APCVD boron diffusion. This requires only one high temperature anneal with no additional masking steps. Excellent iVOC of 733mV and iFF of ~86% were achieved after SiNX passivation on both sides, prior to contact firing. Our device modeling projects that this precursor in combination with a manufacturing-friendly poly-Si patterning technique on front can enable> 25% DS-TOPCon cells at low-cost.

APCVD↗

Development of APCVD BSG and POCl 3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication

This paper presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using APCVD-deposited boron silicate glass and ex-situ POCl 3 diffusion in a single high-temperature step, eliminating the need for additional masking and diffusion processes. A two-tier temperature profile was developed, involving a pre-annealing at above 900°C in nitrogen (N2) ambient followed by POCl 3 diffusion at 840°C. We investigated the effect of varying pre-annealing temperatures, ranging from 875°C to 950°C, on the passivation quality and metal-Si contact properties of both n-TOPCon and p-TOPCon layers. The resultant DS-TOPCon cell precursor after silicon nitride (SiNX) passivation exhibited an excellent iV OC of close to 730 mV. In addition, a rapid asymmetric poly-Si thinning technique, developed in this work, enabled adjustment of the front n + poly-Si thickness while maintaining the rear p + poly-Si thickness. Two types of DS-TOPCon cell architectures can be fabricated: i) full-area thin (≈40nm) n-TOPCon layer on the front and ii) selective-area thick (≈200nm) n-TOPCon fingers underneath the metal grid. Device simulations suggest that full-area DS-TOPCon cell with 40 nm n + poly-Si and selective-area DS-TOPCon cell with 200 nm n + poly fingers on the front, fabricated from our current DS-TOPCon cell precursor, can achieve cell efficiencies of 22.1 and 23.5%, respectively. Detailed power loss analysis and device simulation reveal that further improvements in material and device parameters have potential to push the cell efficiencies of DS-TOPCon cell structure beyond 25%, making it a promising alternative to fabricate a high-efficiency next-generation solar cells at low cost.

14 SOLAR ENERGY↗

Structural Analysis of a Serpentine Superconducting Magnet for the Interaction Region of the Electron Ion Collider

The electron ion collider (EIC) is under design to collide the high energy and highly polarized hadron with electron beams with luminosities up to 10 34 cm −2 s −1 . The superconducting magnet designs at the interaction region (IR) are quite challenging due to the close proximity of the hadron and electron beams. Several serpentine types of superconducting magnets have been designed due to the space restrictions at the IR. Here, to validate the designs in terms of the mechanical strength, structural integrity, as well as the allowed deformations, a detailed structural mechanical analysis for a 12-layer superconducting quadrupole serpentine magnet (Q1BpR) in the rear side hadron beams has been carried out using the finite element method (FEM) considering the pretension stress, shrinking due to cool down, and the electromagnetic force on the conductors. Anisotropy material properties and individual roving tension have been considered. The electro-magnetic (EM) simulations were performed using COMSOL, confirmed with RAT, the structural mechanical analysis were performed using COMSOL by considering the contact elements.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Inserting a Low-Refractive-Index Dielectric Rear Reflector into PERC Cells: Challenges and Opportunities

One of the simplest and most effective ways to reduce the operating temperature of photovoltaic systems in the field is to reflect unusable, 'sub-bandgap' light with energies below the cell absorber's bandgap energy. In this work, low-refractive index SiO2 nanoparticle films inserted between c-Si wafers and metal electrodes significantly increase the reflectance of sub-bandgap light in fabricated test structures. These films are then integrated into the standard PERC fabrication sequence, revealing that the reflection benefits remains after some processing steps but are lost in certain conditions. The SiO2 nanoparticle films are easily ablated during laser contact opening, but are undesirably etched during post-laser cleaning. After Al metallization, the fully fabricated devices show enhanced sub-bandgap reflection when annealed at moderate temperatures, but energy-dispersive X-ray spectroscopy shows that high-temperature firing causes unwanted Al penetration into the SiO2 nanoparticle film, compromising reflection.

14 SOLAR ENERGY↗

Field‐representative evaluation of PID‐polarization in TOPCon PV modules by accelerated stress testing

Abstract Potential‐induced degradation‐polarization (PID‐p) can reduce module power, but how to project the extent to which PID‐p may occur in field conditions considering the factors of system voltage, condensed moisture, temperature, and illumination has not been clarified. Using tunnel oxide passivated contact (TOPCon) modules, this work demonstrates a method to test full‐size crystalline silicon PV modules for PID‐p to provide field‐representative results. In initial screening tests with positive or negative 1000 V electrical bias applied at 60°C for 96 h using Al foil electrodes on the glass surfaces, the module type exhibited reversible PID‐p only on the front face when the cell circuit was in negative voltage potential. No PID was detected on the rear after testing in either polarity. We then evaluated the PID‐p sensitivity on the front side under different UV irradiances while maintaining the glass surface wet to estimate real‐world susceptibility to PID‐p. The magnitude of the observed behavior was fit using a previously developed charge transfer and depletion by light model. Whereas power loss with −1000 V applied to the cell circuit at 60°C for 96 h in the dark was about 30%, testing the module front under 0.051 W·m −2 nm −1 at 340 nm UVA irradiation using fluorescent tubes, the mean degradation was only 3%. When the modules were tested in the dark for PID‐p with in situ dark current–voltage (I‐V) characterization, the thermal activation energy for degradation was 0.71 eV; for recovery in the dark, it was 0.58 eV. Whereas recovery from the degraded state at 60°C in the dark without voltage bias was 5% absolute in 38 h, rapid recovery of about 5% absolute was observed with 1000 W·s/m 2 exposure at 25°C using a flash tester.

14 SOLAR ENERGY↗

Excess carrier concentration in silicon devices and wafers: How bulk properties are expected to accelerate light and elevated temperature degradation

Light and elevated temperature induced degradation (LeTID) is accelerated nearly linearly by the presence of excess carriers. It is therefore important to understand how excess carrier concentration (Δn) changes as a function of exposure conditions, materials properties, and sample structure. We simulate Δn as a function of wafer thickness and bulk minority carrier lifetime (τ) in solar cells and wafers using SCAPS and Quokka3. We also derive closed-form analytic expressions. For wafers, there is a near-linear relationship between Δn and τ or thickness, whereas for solar cells, Δn in the bulk may become limited by rear surface recombination. Thus, LeTID may progress more quickly in wafers than in cells, with a stronger dependence on τ. When comparing experiments, observed degradation rates must be corrected between samples or conditions to account for differences in Δn. This study demonstrates three tools to estimate the magnitude of such corrections, which can aid in the quantitative interpretation of LeTID data and performance predictions. Finally, while each tool yields similar results, there are advantages to each approach that must be weighed in terms of simplicity of inputs versus sophistication of treatment. Incomplete specification of back contact characteristics in commercial products is identified as an important contributor to uncertainty in expected LeTID rates.

36 MATERIALS SCIENCE↗

Developing Efficient Perovskite/Silicon Tandem Devices

This project aims at developing highly efficient perovskite/silicon tandem solar cells by developing efficient perovskite top cells, silicon bottom cells, and monolithically integrating the subcells for highly efficient tandem solar cells. The project focused on increasing the efficiency of perovskite solar cells to 20% and understanding related materials science and device physics, as well as developing a compatible bottom high-efficiency c-Si solar cell. The perovskite cells with a wide bandgap of 1.61 eV and 1.84 eV are fabricated by a low-cost, low-temperature, scalable solution process on lower bandgap silicon bottom cells. The bandgaps of perovskite top cells have been tuned between 1.61 eV and 1.84 eV by composition engineering mainly through controlling the halide mixing ratio in perovskite materials. The efficiencies of the wide bandgap perovskite solar cells have been improved to an excellent efficiency of 21.0% for perovskites with a bandgap of 1.63 eV with increased grain size, reduced energy disorder at cathode contact, and defect passivation. We invented a solvent annealing approach with solvent vapor during thermal annealing to enlarge grain size of perovskite film which reduces the charge trap density and improves the device efficiency. Moreover, we discovered that the non-wetting surface could further increase the grain size for perovskite films, because non-wetting surface could prevent the formation of too dense nuclei from heterogeneous nucleation process. We proposed to reduce the energy disorder of organic charge extraction layer to reduce the power loss in perovskite cells. We pioneered defect passivation concept and techniques to suppress the charge non-radiative recombination in perovskite solar cells to boost the efficiency. For the silicon bottom cell development, different from the conventional silicon cell work under full illumination, the light available for the silicon bottom cell in tandem structure is mainly NIR region. We developed a NIR enhanced silicon cell with efficiency of 21.2% by applying a double-layer antireflection coating at the front side and a MgF2 back reflector layer at the rear side. For the perovskite/silicon tandem device, we achieved a highest reported power conversion efficiency of 25.4% in 2018, and further increased the efficiency up to 26.0% in 2019. The research on tandem solar cells focused on reducing reflection loss to <5% at spectrum of 300-1100 nm by antireflection layer, tuning the bandgap of perovskite film for matched current density between sub-cells, and utilizing a ITO layer between perovskite top cell and silicon bottom cell as interconnect layer without Voc loss. Finally, we developed a blading technique to fabricate perovskite films which produces perovskite solar cells with comparable or even superior efficiency to those made by non-scalable spin coating method. This paves the way for scaling up perovskite/silicon tandem solar cells using solution approach.

14 SOLAR ENERGY↗

CdTe Core: Final Technical Report (FTR)

CdTe is presently the cost-leading thin-film PV technology, directly competing with Si at scale, even when domestically manufactured. While an impressive technology, its efficiency remains much below the detailed balance limit with the largest cause due to its low photovoltage and fill factor. To realize gains, the carrier concentration, minority carrier lifetime, and interface recombination all need to be improved simultaneously over historic levels. Using a new defect chemistry (group V doping instead of copper) has been identified as a viable route using single crystal systems. This project focused on implementing this new defect chemistry in scalable, polycrystalline thin-film photovoltaic CdTe devices with tasks focusing improvements to the front interface, absorber, and rear interface as well as capability development & stakeholder engagement. The goal of the project was to establish a strategy using devices, test structures, detailed characterization, and modeling to quantify the sources of losses in state-of-the-art CdTe photovoltaic devices. Using this strategy and advanced synthesis, losses at the front interface, absorber, and rear interface were worked on in parallel. The final objective was to significantly improve the voltage deficit in CdTe devices to enable improvements in photovoltage and efficiency that can be implemented by industry in the near-term. Over the course of the project, the team developed new characterization techniques, analysis, and modeling which were then applied to state-of-the-art materials generated internally and collaboratively. In particular to enable rapid progress, NREL worked closely with First Solar where NREL grew complete devices as well as ones that interleaved process steps where First Solar had completed different steps such as absorber growth or absorber growth and activation using their baseline methods. Using detailed characterization and analysis including photoemission, photoluminescence, and scanning probe techniques enabled understanding of the loss pathways and area for improvements in our own and First Solar s materials. Ultimately, this contributed to the first series of new world record CdTe efficiencies since 2016, culminating in a 23.1% certified cell that was P-doped along with As-doped cells of similar performance. Internally, NREL improved the statistical variation in baseline As-doped devices and improved average photovoltage by over 100 mV. This was done through an improvement in absorber quality, changed front interface, and improved back contact. In addition to materially improving the fabrication processes at NREL, characterization, analysis, and modeling were developed and disseminated. NREL also played a pivotal role in community building over the course of this project working closely with the Cadmium Telluride Accelerator Consortium. NREL worked in a series of collaborations with academic and industry partners, leveraging knowledge and innovations from this project, as well as helped organize a series of workshops to ensure rapid progress in the field. Working closely with the academic community has led to a dissemination of knowledge; working with First Solar as increased US competitiveness First Solar expanded domestic production to ~10 GW and opened new facilities.

14 SOLAR ENERGY↗

Investigation of Flux Spreading in a Light-Trapping, Planar-Cavity Receiver for Enclosed Solar Particle Heating

Concentrating solar thermal power (CSP) technology development has recently focused on increasing the operating temperatures to accommodate high efficiency power cycles and thermochemical processes. Inert solid particles as heat transfer media enable solar receivers to operate above 700 degrees Celsius resulting in increased system thermal efficiency compared to the conventional molten salt based CSP system. An open-cavity falling-particle solar receiver that can efficiently heat particles by direct heating from concentrated solar radiation faces challenges with large particle losses from wind and unable to support thermochemical reactions. A light-trapping, planar cavity reiver (LTPCR) where particles are indirectly heated can significantly minimize the particle losses during the operation, support thermochemical reactions, and offer scalability potential. The LTPCR features an array of vertical planar receiver/absorber panels arranged within a cavity configuration. Concentrated solar radiation from heliostats is focused onto the receiver walls, where heat is indirectly transferred to solid particles flowing inside the receiver channels. Heat transfer occurs through direct contact between the receiver panel walls and particles, and can be enhanced by fluidizing particles with air. This fluidization increases particle-wall contact and extends particle residence time, maximizing heat transfer efficiency. The unique vertical planar receiver structure originated from a near-blackbody tubular light absorber, effectively distributing the incoming solar beam spread across the panel walls and trapping light. This flux spreading effect, driven by cosine projection, converts high incident solar flux into a lower, more uniform heat flux on the panel walls. This redistribution enhances heat transfer efficiency between particle-wall or reaction gases-wall, while preventing localized overheating of the receiver panel. Indirect planar cavity solar receivers completely separate solid particles from the ambient environment that can greatly reduce the thermal losses in heated particles resulting in high efficiency at high temperatures above 700 degrees Celsius. This design ensures no particle losses to the environment during the operation while open-cavity designs can experience significant particle losses from wind. An experimental investigation was conducted to observe flux spreading on the receiver panel wall. A lab-scale prototype planar receiver, fabricated using Haynes 230 alloy, was tested under direct concentrated solar radiation using the high-flux solar furnace (HFSF) facility at NREL. The experiment was performed under normal peak radiative heat fluxes ranging from 800 to 1900 kW/m2. A temperature distribution on the panel wall was measured using a thermal imaging camera (FLIR A 6600). To prevent overheating at the receiver front tip, prism-shaped heat shields (Zircar UNIFROM C1) were placed in front of the receiver, and their influence on flux spreading was also studied. Absorbed flux distribution on the panel wall was modeled using SolTrace. The total solar power and flux distributions delivered from HFSF were determined based on the heliostat mirror optical properties, direct normal irradiance (DNI) on the on-sun testing days, peak flux measurement during the on-sun testing, and shutter/attenuator settings Due to the large incident angles of the solar beam on the panel wall, the angular optical properties of Haynes 230 alloy and Zircar heat shields were incorporated into the model. This flux distribution model was then integrated into a computational fluid dynamics (CFD) simulation to predict the receiver panel wall temperature, which was compared with the experimental measurements. Both prediction and measurements identified a temperature hotspot at the backside of the panel, indicating that the incident solar beam can fully reach to the rear of the receiver. The heat shields positioned at the front of the receiver effectively reduced the excessive temperature rise at the receiver front tip. Overall, the temperature was well distributed over the panel wall, with a minor hotspot at the back of the receiver. The model slightly overpredicted the temperature, possibly due to discrepancies in optical properties of the panel and an underprediction of thermal loss in the receiver. The advancement of the particle LTPCR offers a viable alternative to open-cavity receivers by addressing particle loss issues. Additionally, it presents a pathway for enabling solar thermochemical processes, extending CSP technology beyond power generation to fuel and chemical production.

14 SOLAR ENERGY↗