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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Incident excitation effects on ZnO-based photoluminescence

Zinc oxide (ZnO) is an attractive semiconductor material owing to a wide band gap, large exciton binding energy, and strong luminescent properties. Two distinct spectral regions are present in the room temperature emission of this material: a narrow line in the UV/near-UV region that is excitonic in nature and a lower energy broad emission band centered in the green/yellow region. Commercially available ZnO particles containing excess Zn and oxygen vacancy defect sites (referred to as ZnO:Zn) were excited using three light sources to study different radiative recombination regimes of the as-received powders. First, a UV LED at a center wavelength of 365 nm provided low irradiance (0.02–0.08 W/cm 2 ) with varying pulse widths (continuous operation to 16 ns). Second, the third harmonic of a pulsed Nd:YAG laser provided high irradiances (∼10 4 –10 6 W/cm 2 ) at a fixed nominal pulse width of 5 ns. Finally, a continuous polychromatic synchrotron X-ray source was also used to excite the ZnO:Zn powders. During UV LED excitation, a low number of carriers are created in the material, leading to an anticipated linear relationship between luminescence and irradiance. This held true for defect luminescence; however, there was an observed enhancement of exciton emission relative to the UV LED intensity as the pulse width was decreased, independent of irradiance. During UV laser excitation, the number of carriers was significantly increased, raising the material into a bimolecular recombination regime, which produced exciton emission much stronger than visible band emission. Finally, spectra obtained during synchrotron X-ray excitation, whose continuous illumination and higher penetration depth yielded higher emission from defect sites relative to exciton emission. A redshift in the exciton emission was also observed as excitation pulse width and sample temperature were varied, and is discussed.

Westphal, Eric Robert [Sandia National Lab. (SNL-N↗
DOE OSTI2022

Cyanobacterial photosystem II reaction center design in tobacco chloroplasts increases biomass in low light

Abstract The D1 polypeptide of the photosystem II (PSII) reaction center complex contains domains that regulate primary photochemical yield and charge recombination rate. Many prokaryotic oxygenic phototrophs express two or more D1 isoforms differentially in response to environmental light needs, a capability absent in flowering plants and algae. We report that tobacco (Nicotiana tabacum) plants carrying the Synechococcus (Synechococcus elongatus PCC 7942) low-light mutation (LL-E130Q) in the D1 polypeptide (NtLL) acquire the cyanobacterial photochemical phenotype: faster photodamage in high light and significantly more charge separations in productive linear electron flow in low light. This flux increase produces 16.5% more (dry) biomass under continuous low-light illumination (100 μE m−2 s−1, 24 h). This gain is offset by the predicted lower photoprotection at high light. By contrast, the introduction of the Synechococcus high-light mutation (HL-A152S) into tobacco D1 (NtHL) has slightly increased photoprotection, achieved by photochemical quenching, but no apparent impact on biomass yield compared to wild type under the tested conditions. The universal design principle of all PSII reaction centers trades off energy conversion for photoprotection in different proportions across all phototrophs and provides a useful guidance for testing in crop plants. The observed biomass advantage under continuous low light can be transferred between evolutionarily isolated lineages to benefit growth under artificial lighting conditions. However, removal of the selective marker gene was essential to observe the growth phenotype, indicating growth penalty imposed by use of the particular spectinomycin-resistance gene.

Zhang, Yuan (ORCID:0000000291785207)↗
DOE OSTI2024

Dimensionality effects on trap-assisted recombination: the Sommerfeld parameter

Abstract In the context of condensed matter physics, the Sommerfeld parameter describes the enhancement or suppression of free-carrier charge density in the vicinity of a charged center. The Sommerfeld parameter is known for three-dimensional systems and is integral to the description of trap-assisted recombination in solids. Here we derive the Sommerfeld parameter in one and two dimensions and compare with the results in three dimensions. We provide an approximate analytical expression for the Sommerfeld parameter in two dimensions. Our results indicate that the effect of the Sommerfeld parameter is to suppress trap-assisted recombination in decreased dimensionality.

Physics↗
DOE OSTI2021

Cage effects control the mechanism of methane hydroxylation in zeolites

Catalytic conversion of methane to methanol remains an economically tantalizing but fundamentally challenging goal. Current technologies based on zeolites deactivate too rapidly for practical application. Here, we found that similar active sites hosted in different zeolite lattices can exhibit markedly different reactivity with methane, depending on the size of the zeolite pore apertures. Whereas zeolite with large pore apertures deactivates completely after a single turnover, 40% of active sites in zeolite with small pore apertures are regenerated, enabling a catalytic cycle. Detailed spectroscopic characterization of reaction intermediates and density functional theory calculations show that hindered diffusion through small pore apertures disfavors premature release of CH 3 radicals from the active site after C-H activation, thereby promoting radical recombination to form methanol rather than deactivated Fe-OCH 3 centers elsewhere in the lattice.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Naegleria fowleri: Protein structures to facilitate drug discovery for the deadly, pathogenic free-living amoeba

Naegleria fowleri is a pathogenic, thermophilic, free-living amoeba which causes primary amebic meningoencephalitis (PAM). Penetrating the olfactory mucosa, the brain-eating amoeba travels along the olfactory nerves, burrowing through the cribriform plate to its destination: the brain’s frontal lobes. The amoeba thrives in warm, freshwater environments, with peak infection rates in the summer months and has a mortality rate of approximately 97%. A major contributor to the pathogen’s high mortality is the lack of sensitivity of N . fowleri to current drug therapies, even in the face of combination-drug therapy. To enable rational drug discovery and design efforts we have pursued protein production and crystallography-based structure determination efforts for likely drug targets from N . fowleri . The genes were selected if they had homology to drug targets listed in Drug Bank or were nominated by primary investigators engaged in N . fowleri research. In 2017, 178 N . fowleri protein targets were queued to the Seattle Structural Genomics Center of Infectious Disease (SSGCID) pipeline, and to date 89 soluble recombinant proteins and 19 unique target structures have been produced. Many of the new protein structures are potential drug targets and contain structural differences compared to their human homologs, which could allow for the development of pathogen-specific inhibitors. Five of the structures were analyzed in more detail, and four of five show promise that selective inhibitors of the active site could be found. The 19 solved crystal structures build a foundation for future work in combating this devastating disease by encouraging further investigation to stimulate drug discovery for this neglected pathogen.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Spectroscopic Investigation of Shallow Hole Traps in Ga- and B-doped Czochralski Silicon: Insight into Light-Induced Degradation

We report the minority carrier lifetime in B-doped Czochralski (Cz) Si declines upon carrier injection due to light-induced degradation (LID), which is attributed to the formation of a recombination-active boron-oxygen complex. Ga-doped Cz Si does not undergo LID. Previously, we showed that B-doped Cz Si undergoes a transition from paramagnetic to diamagnetic due to LID. Herein, we show that Ga-doped Cz Si remains paramagnetic upon carrier injection. This suggests that either the shallow hole traps that are formed in B-doped Cz Si are absent in Ga-doped Cz Si, or the negative-U centers in Ga-doped Cz Si do not transform into a recombination-active configuration, because the shallow acceptor trap state is shallower than the Ga acceptor level in the forbidden gap. In contrast to B-doped Cz Si, the defect signatures in Ga-doped Cz Si do not change upon light exposure, as detected by both electron paramagnetic resonance and deep-level transient spectroscopy.

14 SOLAR ENERGY↗
DOE OSTI2021

Short-lived metal-centered excited state initiates iron-methionine photodissociation in ferrous cytochrome c

Abstract The dynamics of photodissociation and recombination in heme proteins represent an archetypical photochemical reaction widely used to understand the interplay between chemical dynamics and reaction environment. We report a study of the photodissociation mechanism for the Fe(II)-S bond between the heme iron and methionine sulfur of ferrous cytochrome c . This bond dissociation is an essential step in the conversion of cytochrome c from an electron transfer protein to a peroxidase enzyme. We use ultrafast X-ray solution scattering to follow the dynamics of Fe(II)-S bond dissociation and 1 s 3 p (Kβ) X-ray emission spectroscopy to follow the dynamics of the iron charge and spin multiplicity during bond dissociation. From these measurements, we conclude that the formation of a triplet metal-centered excited state with anti-bonding Fe(II)-S interactions triggers the bond dissociation and precedes the formation of the metastable Fe high-spin quintet state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Slow Auger Recombination of Trapped Excitons Enables Efficient Multiple Electron Transfer in CdS–Pt Nanorod Heterostructures

We report solar-to-fuel conversion reaction often requires multiple proton-coupled electron transfer (PCET) processes powered by the energetic electrons and/or holes generated by the absorption of multiple photons. The effective coupling of multiple electron transfer from the light absorber with the multiple PCET reactions at the catalytic center is one of the key challenges in efficient and selective conversion of solar energy to chemical fuels. In this paper, we examine the dynamics of multiple electron transfer in quantum confined CdS nanorods with a Pt tip, in which the CdS rod functions as the light absorber and the Pt tip the catalytic center. By excitation-fluence-dependent transient absorption spectroscopic measurements, we show that the multiexciton Auger recombination rate in CdS rods follows a carrier-collision model, k n A = n 2 (n – 1)/4k 2 A , with a biexciton lifetime (1/k 2 A ) of 2.0 ± 0.2 ns. In CdS–Pt nanorods, electron transfer kinetics from the CdS conduction band edge to the Pt show negligible dependence on the excitation fluence, occurring with a half-life time of 5.6 ± 0.6 ps. The efficiency of multiple exciton dissociation by multiple electron transfer to Pt decreases from 100% in biexciton states to ~41% at 22 exciton state due to the competition with Auger recombination. The half-lifetime of the n-charge separated state recombination (with n electrons in the Pt and n holes in the CdS) decreases from 10 μs in the single charge separated state to 42 ns in nine charge separated states. Our findings suggest the possibility of driving multielectron photocatalytic reactions under intense illumination and controlling product selectivity through multielectron transfer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

CdSe Magic-Size Clusters Deviate from Nanocrystal-Size Scalings for Ultrafast Intraband Relaxation and Auger Recombination

The cluster regime of colloidal semiconductor quantum dots (QDs) occupies an interesting space on the continuum from molecule to bulk material and allow the study of QD properties at extreme quantum confinement limits. For typical QDs, several size-dependent property trends are well established including intraband relaxation rates and universal scaling of Auger recombination with particle volume. Advances in synthesis now allow isolation of atomically precise semiconductor magic-size clusters (MCs), which offer experimental insight regarding how electronic structure changes with particle size in the ultrasmall limit. Here, we report intraband cooling and Auger recombination for several stable CdSe MCs as a function of particle size and observe deviation from QD response in the cluster regime. We additionally show optical signatures ascribed to transient disordering 2 that appear in the single exciton regime for MCs, which point to complexities regarding their implementation.

Auger recombination↗
DOE OSTI2023

Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates

Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) lightemitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to non-radiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and nonradiative recombination rates that explains the increase in light-emission efficiency of InGaN with increasing indium concentration, without invoking the suppression of carrier diffusion. Furthermore, our analysis challenges the notion that carrier localization gives rise to defect tolerance in InGaN.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Enhancement of Photovoltaic Current through Dark States in Donor–Acceptor Pairs of Tungsten–Based Transition Metal Di–Chalcogenides

As several photovoltaic materials experimentally approach the Shockley– Queisser limit, there has been a growing interest in unconventional materials and approaches with the potential to cross this efficiency barrier. One such candidate is dark state protection induced by the dipole–dipole interaction between molecular excited states. This phenomenon has been shown to significantly reduce carrier recombination rate and enhance photon-to-current conversion, in elementary models consisting of few interacting chromophore centers. Atomically thin 2D transition metal di-chalcogenides (TMDCs) have shown great potential for use as ultrathin photovoltaic materials in solar cells due to their favorable photon absorption and electronic transport properties. TMDC alloys exhibit tunable direct bandgaps and significant dipole moments. In this work, the dark state protection mechanism has been introduced to a TMDC based photovoltaic system with pure tungsten diselenide (WSe 2 ) as the acceptor material and the TMDC alloy tungsten sulfo-selenide (WSeS) as the donor material. Furthermore, our numerical model demonstrates the first application of the dark state protection mechanism to a photovoltaic material with a photon current enhancement of up to 35% and an ideal photon-to-current efficiency exceeding the Shockley–Queisser limit.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Spectral and small-signal electroluminescence analysis of carrier dynamics in dual-color InGaN/GaN light-emitting diodes

Here, we study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells (QWs) were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities, consistent with its narrower bandgap, while emission from the blue QW is more significant at higher current densities, consistent with its reduced quantum confined Stark effect and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, our measurements suggest that the effective active region contributing most strongly to radiative recombination corresponds to approximately two to three QWs on the p-GaN side, indicating limited carrier transport to more distant QWs in the structures studied.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Spatially separating redox centers on 2D carbon nitride with cobalt single atom for photocatalytic H 2 O 2 production

Redox cocatalysts play crucial roles in photosynthetic reactions, yet simultaneous loading of oxidative and reductive cocatalysts often leads to enhanced charge recombination that is detrimental to photosynthesis. This study introduces an approach to simultaneously load two redox cocatalysts, atomically dispersed cobalt for improving oxidation activity and anthraquinone for improving reduction selectivity, onto graphitic carbon nitride (C 3 N 4 ) nanosheets for photocatalytic H 2 O 2 production. Spatial separation of oxidative and reductive cocatalysts was achieved on a two-dimensional (2D) photocatalyst, by coordinating cobalt single atom above the void center of C 3 N 4 and anchoring anthraquinone at the edges of C 3 N 4 nanosheets. Such spatial separation, experimentally confirmed and computationally simulated, was found to be critical for enhancing surface charge separation and achieving efficient H 2 O 2 production. This center/edge strategy for spatial separation of cocatalysts may be applied on other 2D photocatalysts that are increasingly studied in photosynthetic reactions.

2D photocatalyst↗
DOE OSTI2020

Pulse Radiolysis Study of Radiation Effect on Molten Salt

The molten salt reactor concept, where nuclear fuel is dissolved in a molten salt that also serves as the heat transfer fluid, is a leading candidate for next generation nuclear reactors. This necessitates a thorough understanding of radiation effects on molten salt media to support the design, development, and deployment of such reactors. Early, pioneering pulse radiolysis molten salt experiments observed key primary radiolysis products such as the solvated electron (esolv?) and dichloride radical anion (Cl2??), but left many fundamental mechanistic and reactivity questions unanswered. Here we report on the reaction kinetics of esolv? and Cl2?? in molten LiCl-KCl eutectic salt doped with Zn2+ ion, using electron pulse radiolysis to observe the transient behavior from nanosecond to microsecond time scales. Experiments were performed at the BNL Laser-Electron Accelerator Facility using a recently-developed high-temperature sample holder. Prompt formation of esolv? and Cl2?? are observed; esolv? decays within hundreds of nanoseconds while Cl2?? decays more slowly by second-order kinetics, more likely by cross-recombination rather than disproportionation. This work was supported as part of the Molten Salts in Extreme Environments Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science.

38 - RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCL↗
DOE OSTI2022

Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO 2 transistors

In this study, electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO 2 MOSFETs. The defects observed are almost certainly important to time-dependent dielectric breakdown. The measurements were made with spin-dependent recombination current involving defects at and near the Si/SiO 2 boundary. The interface traps observed are P b0 and P b1 centers, which are silicon dangling bond defects. The ratio of P b0 /P b1 is dependent on the gate stressing polarity. Electrically detected magnetic resonance measurements also reveal generation of E' oxide defects near the Si/SiO 2 interface. Near-zero-field magnetoresistance measurements made throughout stressing reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface.

42 ENGINEERING↗
DOE OSTI2024

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

First-principles calculations of defects and electron–phonon interactions play a critical role in the design and optimization of materials for electronic and optoelectronic devices. The late Audrius Alkauskas made seminal contributions to developing rigorous first-principles methodologies for the computation of defects and electron–phonon interactions, especially in the context of understanding the fundamental mechanisms of carrier recombination in semiconductors. Alkauskas was also a pioneer in the field of quantum defects, helping to build a first-principles understanding of the prototype nitrogen-vacancy center in diamond, as well as identifying novel defects. Here, we describe the important contributions made by Alkauskas and his collaborators and outline fruitful research directions that Alkauskas would have been keen to pursue. Audrius Alkauskas’ scientific achievements and insights highlighted in this article will inspire and guide future developments and advances in the field.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Gamma radiation-induced defects in KCl, MgCl 2 , and ZnCl 2 salts at room temperature

Room temperature post-irradiation measurements of diffuse reflectance and electron paramagnetic resonance spectroscopies were made to characterize the long-lived radiation-induced species formed from the gamma irradiation of solid KCl, MgCl 2 , and ZnCl 2 salts up to 100 kGy. The method used showed results consistent with those reported for electron and gamma irradiation of KCl in single crystals. Thermal bleaching of irradiated KCl demonstrated accelerated disaggregation of defect clusters above 400 K, due to decomposition of Cl 3 - . The defects formed in irradiated MgCl 2 comprised a mixture of Cl 3 - , F-centers, and Mg + associated as M-centers. Further, Mg metal cluster formation was also observed at 100 kGy, in addition to accelerated destruction of F-centers above 20 kGy. Irradiated ZnCl 2 afforded the formation of Cl 2 - due to its high ionization potential and crystalline structure, which decreases recombination. The presence of aggregates in all cases indicates the high diffusion of radicals and the predominance of secondary processes at 295 K. Additionally, thermal bleaching studies showed that chloride aggregates’ stability increases with the ionization potential of the cation present. The characterization of long-lived radiolytic transients of pure salts provides important information for the understanding of complex salt mixtures under the action of gamma radiation.

36 MATERIALS SCIENCE↗