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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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80 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Study of the niobium oxide structure and microscopic effect of plasma processing on the Nb surface

A study of the niobium oxide structure is presented here, focusing on the niobium suboxides. Multiple steps of argon sputtering and XPS measurements were carried out until the metal surface was exposed. Subsequently, the sample was exposed to air for different time intervals and the oxide regrowth was studied. In addition, three Nb samples prepared with different surface treatments were studied before and after being subjected to plasma processing. The scope is investigating the microscopic effect that the reactive oxygen contained in the glow discharge may have on the niobium surface. This study suggests that the Nb 2 O 5 thickness may increase. Nevertheless, since the Nb 2 O 5 is dielectric, its thickening would not negatively affect the cavity performance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Study of the Niobium Oxide Structure and Microscopic Effect of Plasma Processing on the Nb Surface

A study of the niobium oxide structure is presented here, focusing on the niobium suboxides. Multiple steps of argon sputtering and XPS measurements were carried out until the metal surface was exposed. Subsequently, the sample was exposed to air for different time intervals and the oxide regrowth was studied. In addition, three Nb samples prepared with different surface treatments were studied before and after being subjected to plasma processing. The scope is investigating the microscopic effect that the reactive oxygen contained in the glow discharge may have on the niobium surface. This study suggests that the Nb 2 O 5 thickness may increase. Nevertheless, since the Nb 2 O 5 is dielectric, its thickening would not negatively affect the cavity performance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Amount and reactivity of dissolved organic matter export are affected by land cover change from old-growth to second-growth forests in headwater ecosystems

Headwater forest ecosystems of the western USA generate a large portion of the dissolved organic matter (DOM) transported in streams across North America. Land cover changes that alter forest structure and species composition affect the quantity and composition of DOM transferred to aquatic ecosystems. Clear-cut harvesting affects ~1% of the forest area of North America annually, leaving most western forests in varying stages of regrowth and the total area of old-growth forest is decreasing. The consequences of this widespread management practice on watershed carbon cycling remain unknown. We investigated the role of land cover change, because of clear-cut harvesting, from mixed-species old-growth to lodgepole pine-dominated second-growth forest on the character and reactivity of hillslope DOM exports. We evaluated inputs of DOM from litter leachates and export of DOM collected at the base of trenched hillslopes during a 3-year period (2016–2018) at the Fraser Experimental Forest in north-central Colorado, USA. Dissolved organic carbon and total dissolved nitrogen were higher in lateral subsurface flow draining old- versus second-growth forest. Fluorescence spectroscopy showed that the DOM exported from the old-growth forest was more heterogeneous and aromatic and that proteinaceous, microbially processed DOM components were more prevalent in the second-growth forest. Biological oxygen demand assays revealed much lower microbial metabolism of DOM in litter leachate and subsurface exports from the old-growth forest relative to second growth. Old-growth and second-growth forests are co-mingled in managed ecosystems, and our findings demonstrate that land cover change from a mixture of conifer species to lodgepole pine dominance influences DOM inputs that can increase the reactivity of DOM transferred from terrestrial to aquatic ecosystems.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2021

Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and passive devices. The performance of this platform is analyzed using an example made up of four main sections: (1) a fiber coupling section for enabling vertical beam coupling from optical fiber into the photonic chip using a mode-matched surface grating with apodized duty cycles; (2) a transparent waveguide section for realizing passive photonic devices; (3) an adiabatic mode connection structure for moving the optical beam between passive and active device sections; and (4) an active device section for realizing active photonic devices. It is shown that the coupled surface grating, when added with a bottom gold reflector, can achieve a high chip-to-fiber coupling efficiency (CE) of 88.3% at 1550 nm. The adiabatic active-layer mode connection structure has an optical loss of lower than 1% (CE > 99%). The active device section can achieve an optical gain of 20 dB/mm with the use of only 3 quantum wells. The optimized structural parameters of the entire waveguide module are analyzed and discussed.

42 ENGINEERING↗
DOE OSTI2023

Divergent Metabolic Changes in Rhizomes of Lowland and Upland Switchgrass (Panicum virgatum) from Early Season through Dormancy Onset

High-biomass-yielding southerly adapted switchgrasses (Panicum virgatum L.) frequently suffer from unpredictable winter hardiness at more northerly sites arising from damage to rhizomes that prevent effective spring regrowth. Previously, changes occurring over the growing season in rhizomes sampled from a cold-adapted tetraploid upland cultivar, Summer, demonstrated a role for abscisic acid (ABA), starch accumulation, and transcriptional reprogramming as drivers of dormancy onset and potential keys to rhizome health during winter dormancy. Here, rhizome metabolism of a high-yielding southerly adapted tetraploid switchgrass cultivar, Kanlow—which is a significant source of genetics for yield improvement—was studied over a growing season at a northern site. Metabolite levels and transcript abundances were combined to develop physiological profiles accompanying greening through the onset of dormancy in Kanlow rhizomes. Next, comparisons of the data to rhizome metabolism occurring in the adapted upland cultivar Summer were performed. These data revealed both similarities as well as numerous differences in rhizome metabolism that were indicative of physiological adaptations unique to each cultivar. Similarities included elevated ABA levels and accumulation of starch in rhizomes during dormancy onset. Notable differences were observed in the accumulation of specific metabolites, the expression of genes encoding transcription factors, and several enzymes linked to primary metabolism.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2021

Land-use harmonization datasets for annual global carbon budgets

Abstract. Land-use change has been the dominant source of anthropogenic carbon emissions for most of the historical period and is currently one of the largest and most uncertain components of the global carbon cycle. Advancing the scientific understanding on this topic requires that the best data be used as input to state-of-the-art models in well-organized scientific assessments. The Land-Use Harmonization 2 dataset (LUH2), previously developed and used as input for simulations of the 6th Coupled Model Intercomparison Project (CMIP6), has been updated annually to provide required input to land models in the annual Global Carbon Budget (GCB) assessments. Here we discuss the methodology for producing these annual LUH2-GCB updates and extensions which incorporate annual wood harvest data updates from the Food and Agriculture Organization (FAO) of the United Nations for dataset years after 2015 and the History Database of the Global Environment (HYDE) gridded cropland and grazing area data updates (based on annual FAO cropland and grazing area data updates) for dataset years after 2012, along with extrapolations to the current year due to a lag of 1 or more years in the FAO data releases. The resulting updated LUH2-GCB datasets have provided global, annual gridded land-use and land-use-change data relating to agricultural expansion, deforestation, wood harvesting, shifting cultivation, regrowth and afforestation, crop rotations, and pasture management and are used by both bookkeeping models and dynamic global vegetation models (DGVMs) for the GCB. For GCB 2019, a more significant update to LUH2 was produced, LUH2-GCB2019 (https://doi.org/10.3334/ORNLDAAC/1851, Chini et al., 2020b), to take advantage of new data inputs that corrected cropland and grazing areas in the globally important region of Brazil as far back as 1950. From 1951 to 2012 the LUH2-GCB2019 dataset begins to diverge from the version of LUH2 used for the World Climate Research Programme's CMIP6, with peak differences in Brazil in the year 2000 for grazing land (difference of 100 000 km2) and in the year 2009 for cropland (difference of 77 000 km2), along with significant sub-national reorganization of agricultural land-use patterns within Brazil. The LUH2-GCB2019 dataset provides the base for future LUH2-GCB updates, including the recent LUH2-GCB2020 dataset, and presents a starting point for operationalizing the creation of these datasets to reduce time lags due to the multiple input dataset and model latencies.

Chini, Louise (ORCID:0000000290703505)↗
DOE OSTI2021

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗
DOE OSTI2022

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗