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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Three-dimensional characterization of modifications in sapphire exposed to laser-induced damage using multimodal spectral microimaging

Sapphire (Al 2 O 3 ) is a commonly used dielectric material with many applications in lasers and optical systems. Owing to its high resistivity to laser induced damage, it is particularly suitable for use in high power laser systems. This work focuses on developing techniques to characterize material modifications in sapphire. These techniques were applied following localized laser induced ablation, commonly referred to as laser-damage, resulting from exposure to single 100-ps and 6-ns pulses. Measurements of fluorescence-based piezospectroscopy and confocal Raman microscopy were performed with spatial resolution on the order of 1 μ m. Raman microscopy reveals that the relaxation of material exposed to the rapid laser heating, elastic and viscoplastic deformation, melting, and solidification leads to the formation of a polycrystalline material phase. In addition, narrowband fluorescence lines, referred to as R 1 and R 2 , exhibit pressure-sensitive changes to their spectral profiles, allowing 3D internal stresses to be recorded with spatial resolution of the order of a few micrometers.

Laser-damage↗
DOE OSTI2025

Epitaxial growth of conducting perovskite SrTiO3 on (0001) c-axis sapphire using a γ-Al2O3 intermediate layer

Epitaxial growth of complex oxides on large-area wafers, such as sapphire and silicon, represents a key step toward scalable oxide device production. Solid phase epitaxy allows the synthesis of γ-Al 2 O 3 on α-Al 2 O 3 and provides a template with a matched lattice constant and appropriate cubic symmetry for subsequent heteroepitaxial growth of perovskite complex oxides. Nb-doped SrTiO 3 thin films were deposited epitaxially on (111)-oriented γ-Al 2 O 3 intermediate layers on (0001) c-axis-oriented sapphire α-Al 2 O 3 crystals using pulsed laser deposition. The Nb:SrTiO 3 thin films with a thickness of 53 nm, grown at 700 °C on γ-Al 2 O 3 , reached fully relaxed lattice parameters and were epitaxially oriented with respect to the substrate. Nb:SrTiO 3 layers deposited using identical deposition conditions directly on α-Al 2 O 3 , without the γ-Al 2 O 3 intermediate layer, were polycrystalline. The sheet conductivity of Nb:SrTiO 3 grown on γ-Al 2 O 3 /α-Al 2 O 3 is more than ten times higher than that of Nb:SrTiO 3 grown directly on α-Al 2 O 3 without the γ-Al 2 O 3 layer. The results point to new directions for the integration of (111)-oriented pseudocubic perovskite complex oxides and the integration of epitaxial complex oxides over larger areas using α-Al 2 O 3 single-crystal substrates.

Atomic force microscopy↗
DOE OSTI2025

Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire

Quantum coherence in superconducting circuits has increased steadily over the last decades because of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here, in this study, we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature was increased, our results show that the onset of epitaxial growth of α -phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss was only present in samples having an epitaxial Ta/sapphire interface and show that it was apparently mitigated by either growing a thin, epitaxial Nb interlayer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Porter, Matthew↗
DOE OSTI2024

Anti-reflection coating with mullite and Duroid for large-diameter cryogenic sapphire and alumina optics

We developed a broadband two-layer anti-reflection (AR) coating for use on a sapphire half-wave plate (HWP) and an alumina infrared (IR) filter for the cosmic microwave background (CMB) polarimetry. Measuring the faint CMB B-mode signals requires maximizing the number of photons reaching the detectors and minimizing spurious polarization due to reflection with an off-axis incident angle. Sapphire and alumina have high refractive indices of 3.1 and are highly reflective without an AR coating. This paper presents the design, fabrication, quality control, and measured performance of an AR coating using thermally sprayed mullite and Duroid 5880LZ. This technology enables large optical elements with diameters of 600 mm. We also present a thermography-based nondestructive quality control technique, which is key to assuring good adhesion and preventing delamination when thermal cycling. We demonstrate the average reflectance of about 2.6% (0.9%) for two observing bands centered at 90/150 (220/280) GHz. At room temperature, the average transmittance of a 105 mm square test sample at 220/280 GHz is 83%, and it will increase to 90% at 100 K, attributed to reduced absorption losses. Therefore, our developed layering technique has proved effective for 220/280 GHz applications, particularly in addressing dielectric loss concerns. This AR coating technology has been deployed in the cryogenic HWP and IR filters of the Simons Array and the Simons observatory experiments and applies to future experiments such as CMB-S4.

Sakaguri, Kana (ORCID:0000000156678118)↗
DOE OSTI2021

Mid-infrared nonlinear optics in thin-film lithium niobate on sapphire

Periodically poled thin-film lithium niobate (TFLN) waveguides have emerged as a leading platform for highly efficient frequency conversion in the near-infrared. However, the commonly used silica bottom-cladding results in high absorption loss at wavelengths beyond 2.5 µm. In this work, we demonstrate efficient frequency conversion in a TFLN-on-sapphire platform, which features high transparency up to 4.5 µm. In particular, we report generating mid-infrared light up to 3.66 µm via difference-frequency generation of a fixed 1 µm source and a tunable telecom source, with normalized efficiencies up to 200 % <#comment/> / W c m 2 . These results show TFLN-on-sapphire to be a promising platform for integrated nonlinear nanophotonics in the mid-infrared.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Linear and Non-linear Optical Characterization of Glass and Sapphire for Optical Instrumentation of Advanced Fission Reactors

The linear and nonlinear optical properties of glass and sapphire are investigated to determine the material’s suitability to support optical instrumentation for advanced fission reactors. A post-irradiation examination experiment consisting of a Z-scan, measuring nonlinear optical absorption and refraction, and a spectrometer, measuring linear optical absorption was developed and used. Radiation-induced negative nonlinear optical absorption was observed for the first time in fused silica, sapphire, and borosilicate glass under both types of thermal annealing conditions and the respective effects of thermal annealing are reported.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
NASA NTRS1974

Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

Gassaway, J. D.↗
NASA NTRS1982

Molecular-orbital model for metal-sapphire interfacial strength

Self-consistent-field X-Alpha scattered-wave cluster molecular-orbital models have been constructed for transition and noble metals (Fe, Ni, Cu, and Ag) in contact with a sapphire (Al2O3) surface. It is found that a chemical bond is established between the metal d-orbital electrons and the nonbonding 2p-orbital electrons of the oxygen anions on the Al2O3 surface. An increasing number of occupied metal-sapphire antibonding molecular orbitals explains qualitatively the observed decrease of contact shear strength through the series Fe, Ni, Cu, and Ag.

Johnson, K. H.↗
NASA NTRS1985

Incident beam polarization for laser Doppler velocimetry employing a sapphire cylindrical window

For laser Doppler velocimetry studies employing sapphire windows as optical access ports, the birefringency of sapphire produces an extra beam intersection volume which serves to effectively smear the acquired velocity flow field data. It is shown that for a cylindrical window geometry, the extra beam intersection volume may be eliminated with minimal decrease in the fringe visibility of the remaining intersection volume by suitably orienting the polarizations of the initial laser beams. For horizontally incident beams, these polarizations were measured at three intersection locations within the cylinder. It was found that the measured polarization angles agreed with the theoretical predictions.

Lock, J. A.↗
NASA NTRS1985

Incident beam polarization for laser Doppler velocimetry employing a sapphire cylindrical window

For laser Doppler velocimetry studies employing sapphire windows as optical access ports, the birefringency of sapphire produces an extra beam intersection volume which serves to effectively smear the acquired velocity flow field data. It is shown that for a cylindrical window geometry, the extra beam intersection volume may be eliminated with minimal decrease in the fringe visibility of the remaining intersection volume by suitably orienting the polarizations of the initial laser beams. For horizontally incident beams, these polarizations were measured at three intersection locations within the cylinder. It was found that the measured polarization angles agreed with the theoretical predictions.

Lock, J. A.↗
NASA NTRS1988

Characteristics and kinetics of laser-pumped Ti:sapphire oscillators

The experimental performance of a gain-switched Ti:sapphire laser oscillator pumped by a frequency-doubled Q-switched Nd:YAG laser system is presented for a variety of operating conditions. A theoretical model developed for this oscillator predicts well its performance. The observed curved input-output energy plots for the oscillator result from the kinetics of gain switching and fluorescence decay during the gain buildup period. Fluorescence decay also produces observed oscillator thresholds higher than those normally predicted by the standard gain-equals-loss condition. Gain-switched parasitic modes, with a higher threshold but shorter round-trip time than the resonator mode, cause the resonator mode to oscillate only over a finite range of pump energies. Spectroscopic investigations show that the Ti:sapphire cross-section spectrum is well fit by a Poisson distribution, giving a peak cross section of 3 x 10 to the -19th sq cm for the pi polarization.

Eggleston, John M.↗
NASA NTRS1989

Epitaxial growth of InSb (111) on sapphire (0001)

Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, TEM, and SEM data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the 111-line direction. Mobility data show room-temperature mobilities as high as 10,000 sq cm/V s from some regions on the wafer.

Jamison, K. D.↗
NASA NTRS1990

Measurement and analysis of a microwave oscillator stabilized by a sapphire dielectric ring resonator for ultra-low noise

Phase-noise measurements are presented for a microwave oscillator whose frequency is stabilized by a whispering-gallery sapphire ring resonator with Q of 200,000. This mode involves little metallic conduction and allows nearly full use of the very low dielectric loss in sapphire. Several mode families have been identified, in good agreement with frequency calculations. For a 5-cm wheel resonator in a 7.6-cm container, Q values above 100,000 were found at room temperature for all of the modes in this sequence. Coupling Q-values for these same modes ranged from 10,000 (n = 5) to 100,000 (n = 10) for a WR112 waveguide port at the center of the cylinder wall of the containing can. Phase noise measurements for a transistor oscillator locked to the n = 10 (7.84-GHz) mode showed a 1/f cubed dependence for low offset frequencies, and a value of L(f) = -55 dB/Hz at an offset of 10 Hz from the carrier.

Dick, G. John↗
NASA NTRS1991

Broadly tunable high-power operation of an all-solid-state titanium-doped sapphire laser system

Broadly tunable and high-power operation of a Ti-doped sapphire laser is obtained with a diode-laser-pumped frequency-doubled Nd:YAG laser as the pump source. A maximum broadband (FWHM = 25 nm) output pulse energy of 720 microJ at 795 nm in a TEM00 mode is obtained for 1850 microJ of energy of 532-nm pump light. A minimum pulse duration of 7 nsec is obtained from a 40-mm-long cavity. With the use of an intracavity prism, the Ti:sapphire laser is tunable continuously over the 696-1000-nm spectral range (with three different mirror sets).

Steele, T. R.↗
NASA NTRS1992

Diode injection - seeded, 940 nanometer (nm), titanium - sapphire laser for H2O DIAL (differential absorption lidar), measurements

Differential absorption of laser radiation by various molecular species represents both a selective and a sensitive method of measuring specific atmospheric constituents. DIAL measurements can be carried out via two different means. Both involve using two laser pulses with slightly different wavelengths (lambda), (one lambda at a strong absorption line of the molecule of interest, the other detuned into the wing of the line), and comparing the attenuation of the pulses. One approach relies on scattering of the radiation from some conveniently located topographical target. In the other technique elastic scattering from atmospheric aerosols and particulates is used to return the radiation to the lidar receiver system. This case is referred to as the differential absorption and scattering technique, and is the technique we are interested in to measure water vapor at 940 nm. The 940 nm wavelength is extremely desirable to atmospheric scientist interested in accurate DIAL measurements of H2O in the upper and lower troposphere. Simulated measurements using approximately 940 nm and 815 nm lasers at a range of altitudes and experimental conditions are shown. By offering access to larger absorption cross-sections, injected seeded, 940 nm DIAL laser transmitters would allow for more accurate water profile measurements at altitudes from 6 to 16 km than is currently possible with 730 nm and 815 nm DIAL laser transmitters. We have demonstrated the operation of an injected seeded titanium-sapphire (TS) laser operating at approximately 940 nm with an energy of more than 90 mJ per pulse. The TS laser is pumped by a commercial, 600 mJ, 532 nm, 10 Hz Nd:YAG laser. The slope efficiency of the laser using a flat 50 percent R output coupler and a 10 m end-mirror is shown. The laser was injected seeded with a CW, AlGaAs, semiconductor diode laser which had an output of 83 mW. The CW diode seed beam was introduced into the TS laser cavity through a HR end-mirror. When the diode beam is aligned to the TS resonator, it controls the TS laser output wavelength and its spectral line width with the required resolution for DIAL applications. This work supports the need for the development of 940 nm, titanium-sapphire DIAL transmitters.

Miller, George E.↗
NASA NTRS1992

Sapphire fiber interferometer for microdisplacement measurements at high temperature

Attention is given to the use of a short-length multimode sapphire rod as an extension to a conventional Michelson interferometric configuration, but with operation of Fabry-Perot cavity-based sensor element type. The performance of such a device as an interferometric sensor is demonstrated for a case where the interference between the reflections from the sapphire-air interface and an air-metallic surface is inspected for microdisplacements of the metallic surface. A detailed account is given of the sensor's fabrication procedure; results are presented for the detection of surface-acoustic waves.

Murphy, Kent A.↗
NASA NTRS1994

Hydrogen maser clocks in space for solid-Earth research and time-transfer applications: Experiment overview and evaluation of Russian miniature sapphire loaded cavity

The Observatoire Cantonal de Neuchatel (ON) is developing for ESTEC a compact H-maser for space use based upon a miniature sapphire loaded microwave cavity, a technique pioneered at VNIIFTRI. Various contacts between West-European parties, headed by ESA, and the Russian parties, headed by ESA, led to the proposal for flying two H-masers on Meteor 3M, a Russian meteorology satellite in low polar orbit. The experiment will include two masers, one provided by ON and the other by VNIIFTRI. T/F transfer and precise positioning will be performed by both a microwave link, using PRARE equipment, and an optical link, using LASSO-like equipment. The main objectives of the experiment are precise orbit determination and point positioning for geodetic/geophysical research, ultra-accurate time comparison and dissemination as well as in-orbit demonstration of operation and performance of H-masers. Within the scope of a preliminary space H-maser development phase performed for ESTEC at ON in preparation to the joint experiment, a Russian miniature sapphire loaded microwave cavity, on loan from VNIIFTRI, was evaluated in a full-size EFOS hydrogen maser built by ON. The experimental evaluation confirmed the theoretical expectation that with a hydrogen storage volume of only 0.65 liter an atomic quality factor of 1.5 x 10(exp 9) can be obtained for a -105 dBm output power. This represents a theoretical Allan deviation of 1.7 x 10(exp -15) averaged on a 1000 s time interval. From a full-size design to a compact one, therefore, the sacrifice in performance due to the reduction of the storage volume is very small.

Busca, G.↗