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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Frequency Stability of 1x10(sup -13) in a Compensated Sapphire Oscillator Operating Above 77K

We report on the design and test of a whispering gallery sapphire resonator for which the dominant (WGH (sub n11) ) microwave mode family shows frequency-stable, compensated operation for temperatures above 77 kelvin. The resonator makes possible a new ultra-stable oscillator (USO) capability that promises performance improvements over the best available crystal quartz oscillators in a compact cryogenic package.

Compensated Sapphire Oscillator Oscillators↗
NASA NTRS1974

Silicon on sapphire for ion implantation studies

Van der Pauw or bridge samples are ultrasonically cut from silicon on sapphire wafers. Contact pad regions are implanted with moderately heavy dose of ions. Ion of interest is implanted into sample; and, before being annealed in vacuum, sample is sealed with sputtered layer of silicon dioxide. Nickel or aluminum is sputtered onto contact pad areas and is sintered in nitrogen atmosphere.

Pisciotta, B. P.↗
NASA NTRS1976

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Pisciotta, B. P.↗
NASA NTRS1978

Properties of GaN grown on sapphire substrates

Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.

Crouch, R. K.↗
NASA NTRS1979

Effect of interfacial species on shear strength of metal-sapphire contacts

The interfacial shear strength of the metal-insulator system has been studied by means of the coefficient of static friction of copper, nickel, or gold contacts on sapphire in ultrahigh vacuum. The effect on contact strength of adsorbed oxygen, nitrogen, chlorine, and carbon monoxide on the metal surfaces is reported. It was found that exposures as low as 1 L of O2 on Ni produced observable increases in contact strength, whereas exposures of 3 L of Cl2 lead to a decrease in contact strength. These results imply that submonolayer concentrations of these species at the interface of a thin Ni film on Al2O3 should affect film adhesion similarly. The atomic mechanism by which these surface or interface phases affect interfacial strength is not yet understood.

Pepper, S. V.↗
NASA NTRS1985

Size and shape dependence of CO adsorption sites on sapphire supported Fe microcrystals

The surface structure and stoichiometry of alumina substrates, as well as the size, growth characteristics, and shape of Fe deposits on sapphire substrates have been investigated by low energy electron diffraction (LEED), Auger electron spectroscopy, electron energy loss spectroscopy, and X-ray photoemission spectroscopy (XPS), as well as work function measurements, in conjunction with transition electron microscopy observations. The substrates used in this work were the following: (1) new, clean Al2O3; (2) same surface amorphized by Ar ion bombardment; (3) same surface regenerated by 650 C annealing; (4) amorphous alumina films on Ta slab; and (5) polycrystal alumina films, obtained by heating amorphous films to 600 C. Substrate cleaning was found to be most effective in producing a reproducible surface upon oxygen RF plasma treatment. The Fe nucleation and growth process was found to depend strongly on the type of substrate surface and deposition conditions. Ar ion bombardment under beam flooding, and subsequent annealing at 650 C was found an effective means to restore the original Al2O3 (1102) surface for renewed Fe deposition.

Papageorgopoulos, C.↗
NASA NTRS1985

Analysis of vibronic transitions in titanium doped sapphire using the temperature of the fluorescence spectra

An analysis of the fluorescence spectra of titanium-doped sapphire crystals for temperatures ranging from 13 to 578 K is made. Zero- and multiphoton assisted electronic transitions are observed at temperatures below 125 K. Zero-phonon transition energies agree with previously reported measured and predicted values. Photon-assisted transitions suggest that two principle modes of lattice vibrations with energies of 220 and 260/cm are coupled to the electronic 2T2g state. A single phonon energy of 173/cm is observed to couple to the 2Eg electronic state. Crossover energy is estimated to be about 11,800/cm using a simple harmonic approximation. Lineshape analysis is performed. The fluorescence lifetime as measured to be a constant 3.9 microsec below 150 k decreasing to 2.9 microsec at 300 K.

Byvik, C. E.↗
NASA NTRS1986

A lead-on-sapphire superconducting cavity of superior quality

A cavity consisting of a superconducting lead film on a sapphire substrate has been fabricated to obtain the enhanced frequency stability possible with this configuration. The cavity exhibits a quality value Q exceeding 2 x 10 to the 9th in its TE011 mode with a resonant frequency of 2.689 GHz. Methods of fabrication and testing of the cavity are presented. Since the interface between the film and substrate is exposed ot the full value of the resonant magnetic field, the present experiment is the most sensitive test to date for enhanced losses at the interface itself. No evidence of such losses is used. In fact, the measured values of the surface resistance match very well predictions for RF losses based on the BCS theory.

Thakoor, S.↗
NASA NTRS1986

Tests of HgCdTe-on-sapphire focal plane arrays

The general architecture of the imaging array, some merits of HgCdTe-on-sapphire as a detector material, and the current status of the laboratory tests and the Short Wave Infrared (SWIR) camera are described.

Hereld, M.↗
NASA NTRS1987

Mathematical modeling of a Ti:sapphire solid-state laser

The project initiated a study of a mathematical model of a tunable Ti:sapphire solid-state laser. A general mathematical model was developed for the purpose of identifying design parameters which will optimize the system, and serve as a useful predictor of the system's behavior.

Swetits, John J.↗
NASA NTRS1988

Electron Beam "Writes" Silicon On Sapphire

Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.

Heinemann, Klaus↗