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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Computer program simulates the time domain response of an electronic circuit to an arbitrary forcing function. CIRCUS uses a charge-control parameter model to represent each semiconductor device. Given the primary photocurrent, the transient behavior of a circuit in a radiation environment is determined.
The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.
A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.
Theoretical and numerical model study of oxidation kinetics based on ionic diffusion in discrete lattices
Nonlinear model of field effect transistor for computer aided transient analysis of complementary metal oxide semiconductor-field effect transistor NAND gate
Because the surface of the Moon drops to cryogenic temperatures, no solar-powered lunar spacecraft have reliably operated beyond a single lunar day. Passive thermal control cannot keep a spacecraft sufficiently warm for the 354-hour lunar night, and active thermal control requires a dramatic increase in battery mass at the expense of payload mass. Extreme conditions seen on the lunar surface suggest a radioisotope solution is ideal, but mass, cost, and schedule are inconsistent with low-cost frequent flight intent of the commercial lunar payload services (CLPS) program. To solve the issue of lunar night survivability without radioisotope sources of power and heat, a lunar power hibernation approach is being developed at the Glenn Research Center, which exploits the ability of common 18650 Lithium-ion cells to passively survive cryogenic freeze-thaw cycles and recover without apparent performance degradation. A key aspect of this hibernation approach is the use of cryogenically operable electronics that safely manage the restoration of the battery thermal environment at lunar dawn. A spacecraft utilizing this strategy will operate into the lunar night on batteries until the state of charge or spacecraft temperature reaches a predetermined threshold. At this point, systems are shut down and the battery is isolated from the main bus to prevent charge or discharge during the freezing and thawing transitions. The system remains passive until lunar dawn, where temperatures can reach as low as 50 K. All electronics must be tolerant to these conditions. When the solar arrays are finally illuminated at lunar dawn, the main bus power electronics will initiate a “cold start” and begin regulating array power. The main bus electronics must be designed to operate at cryogenic temperatures. Array power is used to warm the battery and passive electronics back to operational temperatures. Once batteries are returned to normal temperatures, diagnostics and precharging is performed, as needed, and the battery is reconnected. The overall spacecraft system reboots and returns to nominal operations until lunar night returns. To assure that we can develop batteries suited for many hibernation freeze/thaw cycles, STMD Space Technology Research Grant Program (STRG) has selected two principal investigators that will thoroughly characterize of the Li-ion cell through the freeze-thaw process, investigate degradation mechanisms, and identify potential diagnostic techniques. STMD STRG is also funding an investigation of Gallium-Nitride semiconductors for cryogenic power applications. This work includes physics-informed modeling that considers cryogenic conductivity, carrier mobility, and quantum effects that govern semiconductor performance at cryogenic temperatures. These models can enable engineers to develop accurate cryogenic simulation models that assist in the design of power controls stable over the entire lunar surface temperature range. Meanwhile, Glenn is performing cryogenic testing of batteries and electronics, establishing design guidelines for power applications in extreme cold lunar environment, and potentially developing a hibernation technology demonstrator. The hibernation approach will enable low-cost lunar robotic missions to extend their operating lifetime to many months while minimizing development costs and impact on payload capacity. The need for cryogenically operable electronics is restricted to only main bus power and battery controls, as the majority of systems simply need to passively tolerate cryogenic temperatures. This allows developers to continue to exploit the cost savings of legacy and COTS hardware with minimum modification. For these reasons, lunar power hibernation is a viable near-term solution for lunar night survivability for solar powered commercial landers.
As semiconductor circuits shrink to CDs below 0.1 nm, it is becoming increasingly critical to replace and/or enhance existing technology with nanoscale structures, such as nanowires for interconnects. Nanowires grown in plasmas are strongly dependent on processing conditions, such as gas composition and substrate temperature. Growth occurs at specific sites, or step-edges, with the bulk growth rate of the nanowires determined from the equation of motion of the nucleating crystalline steps. Traditional front-tracking algorithms, such as string-based or level set methods, suffer either from numerical complications in higher spatial dimensions, or from difficulties in incorporating surface-intense physical and chemical phenomena. Phase field models have the robustness of the level set method, combined with the ability to implement surface-specific chemistry that is required to model crystal growth, although they do not necessarily directly solve for the advancing front location. We have adopted a phase field approach and will present results of the adatom density and step-growth location in time as a function of processing conditions, such as temperature and plasma gas composition.
Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.
A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.
We present numerical results of the diffusion coefficients (DCs) in the coupled diffusion model derived in the preceding paper for a semiconductor quantum well. These include self and mutual DCs in the general two-component case, as well as density- and temperature-related DCs under the single-component approximation. The results are analyzed from the viewpoint of free Fermi gas theory with many-body effects incorporated. We discuss in detail the dependence of these DCs on densities and temperatures in order to identify different roles played by the free carrier contributions including carrier statistics and carrier-LO phonon scattering, and many-body corrections including bandgap renormalization and electron-hole (e-h) scattering. In the general two-component case, it is found that the self- and mutual- diffusion coefficients are determined mainly by the free carrier contributions, but with significant many-body corrections near the critical density. Carrier-LO phonon scattering is dominant at low density, but e-h scattering becomes important in determining their density dependence above the critical electron density. In the single-component case, it is found that many-body effects suppress the density coefficients but enhance the temperature coefficients. The modification is of the order of 10% and reaches a maximum of over 20% for the density coefficients. Overall, temperature elevation enhances the diffusive capability or DCs of carriers linearly, and such an enhancement grows with density. Finally, the complete dataset of various DCs as functions of carrier densities and temperatures provides necessary ingredients for future applications of the model to various spatially inhomogeneous optoelectronic devices.
Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).
Equivalent circuit and modified and approximate models for metal oxide semiconductor-field effect transistor devices, and adaptability to computerized circuit design
Disordered materials electronic structure, discussing crystal types, amorphous semiconductors and Mott-CFO model
Several parameters of certain three-dimensional semiconductor devices including diodes, transistors, and solar cells can be determined without solving the actual boundary-value problem. The recombination current, transit time, and open-circuit voltage of planar diodes are emphasized here. The resulting analytical expressions enable determination of the surface recombination velocity of shallow planar diodes. The method involves introducing corresponding one-dimensional models having the same values of these parameters.
Investigating categorization and formulation of stress and strength factors for semiconductor diodes to provide improved failure rate prediction from mathematical models
In an investigation of metal oxide semiconductor field effect transistor (MOFSET) devices, a one-dimensional mathematical model of device dynamics was prepared, from which an accurate and computationally efficient drain current expression could be derived for subsequent parameter extraction. While a critical review revealed weaknesses in existing 1-D models (Pao-Sah, Pierret-Shields, Brews, and Van de Wiele), this new model in contrast was found to allow all the charge distributions to be continuous, to retain the inversion layer structure, and to include the contribution of current from the pinched-off part of the device. The model allows the source and drain to operate in different regimes. Numerical algorithms used for the evaluation of surface potentials in the various models are presented.
This paper presents a 2D axisymmetric combined conduction and radiation model of a multizone crystal growth furnace. The model is based on a programmable multizone furnace (PMZF) designed and built at NASA Lewis Research Center for growing high quality semiconductor crystals. A novel feature of this model is a control algorithm which automatically adjusts the power in any number of independently controlled heaters to establish the desired crystal temperatures in the furnace model. The control algorithm eliminates the need for numerous trial and error runs previously required to obtain the same results. The finite element code, FIDAP, used to develop the furnace model, was modified to directly incorporate the control algorithm. This algorithm, which presently uses PID control, and the associated heat transfer model are briefly discussed. Together, they have been used to predict the heater power distributions for a variety of furnace configurations and desired temperature profiles. Examples are included to demonstrate the effectiveness of the PID controlled model in establishing isothermal, Bridgman, and other complicated temperature profies in the sample. Finally, an example is given to show how the algorithm can be used to change the desired profile with time according to a prescribed temperature-time evolution.
Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. It is well known that the value of diffusion coefficients affects the threshold pumping current of a semiconductor laser. At the same time, the strength of carrier diffusion process is expected to affect the modulation bandwidth of an AC-modulated laser. It is important not only to investigate the combined DC and AC effects due to carrier diffusion, but also to separate the AC effects from that of the combined effects in order to provide design insights for high speed modulation. In this presentation, we apply a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations. The model allows microscopic calculation of the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature. We first studied combined AC and DC effects of lateral carrier diffusion by studying the bandwidth dependence on diffusion coefficient at a given DC current under small signal modulation. The results show an increase of modulation bandwidth with decrease in the diffusion coefficient. We simultaneously studied the effects of nonlinearity in the diffusion coefficient. To clearly identify how much of the bandwidth increase is a result of decrease in the threshold pumping current for smaller diffusion coefficient, thus an effective increase of DC pumping, we study the bandwidth dependence on diffusion coefficient at a given relative pumping. A detailed comparison of the two cases will be presented.