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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Robust Polymer Electrolytes For Flexible Energy Storage (CRADA Final Report)

As part of the Cyclotron Road program, Anthro Energy investigated the formulation, synthesis, and application of advanced supramolecular compounds for lithium-ion batteries. Anthro Energy developed and tested formulations and chemistries to create polymeric materials with improved mechanical strength, safety, and electrochemical performance. These materials were explored for use in next-generation batteries with a variety of form factors. Initially, Anthro Energy tested these materials to create flexible and deformable batteries, which are in high demand for the wearable/flexible electronics industry. In future work, Anthro Energy’s materials may be applied to create rigid structural batteries, or to enable novel chemistries such as silicon anodes or lithium metal anodes. In the process of testing the company’s unique lithium-ion cells, Anthro Energy explored the development and utilization of novel cell components, cell architectures, and testing protocols. These next-generation flexible and structural batteries may eventually enable new categories of electronic devices.

25 ENERGY STORAGE↗
DOE OSTI2021

Prospects for Surrogate Neutron Capture Measurements with Radioactive Ion Beams and GODDESS

Neutron capture reactions are responsible for the synthesis of almost all of the elements heavier than iron through the slow s-process, that proceeds close to the line of stability, and the rapid r-process, with very neutron-rich waiting points. Uncertainties in (n,γ) rates in neutron rich nuclei, especially near closed neu- tron shells, can have significant impact [1] on the predictions of final abundances for different astrophysical scenarios for the r process. Understanding (n,γ) rates on neutron-rich fission fragments is also important for nuclear forensics and stockpile stewardship science. Ratkiewicz et al. [2 and references therein] has recently demonstrated that the (d,pγ) reaction is a valid surrogate for (n,γ), where the formation of the compound nucleus from the breakup of the deuteron has been calculated in a reaction model and the subsequent measured gamma-decay probabilities are reproduced with standard level density and strength functions in a Bayesian approach. In parallel to the surrogate validation efforts, we have demonstrated that the (d,pγ) reaction can be measured in inverse kinematics with Gammasphere ORRUBA: Dual Detectors for Experimental Structure Studies (GODDESS) [3] where the Gammasphere array of Compton-suppressed HPGe detectors is coupled to the Oak Ridge Rutgers University Barrel Array of position-sensitive silicon strip detectors. During the commissioning campaign we measured the (d,pγ) reaction with 134 Xe and 95 Mo beams, the latter to demonstrate the surrogate method in inverse kinematics. The present talk will present preliminary results from this campaign including γ-decay probabilities and prospects for surrogate (n,γ) measurements with 143 Ba fission-fragment beams.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Study of interface reaction in a B 4 C/Cr mirror at elevated temperature using soft X-ray reflectivity

Boron carbide is a prominent material for high-brilliance synchrotron optics as it remains stable up to very high temperatures. The present study shows a significant change taking place at 550°C in the buried interface region formed between the Cr adhesive layer and the native oxide layer present on the silicon substrate. An in situ annealing study is carried out at the Indus-1 Reflectivity beamline from room temperature to 550°C (100°C steps). The studied sample is a mirror-like boron carbide thin film of 400 Å thickness deposited with an adhesive layer of 20 Å Cr on a silicon substrate. The corresponding changes in the film structure are recorded using angle-dependent soft X-ray reflectivity measurements carried out in the region of the boron K-edge after each annealing temperature. Analyses performed using the Parratt recursive formalism reveal that the top boron carbide layer remains intact but interface reactions take place in the buried Cr–SiO2 region. After 300°C the Cr layer diffuses towards the substrate. At higher temperatures of 500°C and 550°C the Cr reacts with the native oxide layer and tends to form a low-density compound of chromium oxysilicide (CrSiOx). Depth profiling of Si and Cr distributions obtained from secondary ion mass spectroscopy measurements corroborate the layer model obtained from the soft X-ray reflectivity analyses. Details of the interface reaction taking place near the substrate region of boron carbide/Cr sample are discussed.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Hydrosilyation of CO 2 using a silatrane hydride: structural characterization of a silyl formate compound

The silatrane hydride compound, [N(CH 2 CH 2 O) 3 ]SiH, reacts with CO 2 in the presence of the [tris(2-pyridylthio)methyl]zinc hydride complex, [Tptm]ZnH, to afford the silyl formate and methoxide derivatives, [N(CH 2 CH 2 O) 3 ]SiO 2 CH and [N(CH 2 CH 2 O) 3 ]SiOCH 3 . The molecular structure of [N(CH 2 CH 2 O) 3 ]SiO 2 CH has been determined by X-ray diffraction, thereby demonstrating that the formate ligand adopts a distal conformation in which the uncoordinated oxygen atom resides with a trans-like disposition relative to silicon. In conclusion, density functional theory calculations indicate that the atrane motif of [N(CH 2 CH 2 O) 3 ]SiO 2 CH is flexible, such that the energy of the molecule changes relatively little as the Si···N distance varies over the range 2.0–3.0 Å.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Aluminum scandium nitride films for piezoelectric transduction into silicon at gigahertz frequencies

Recent advances in the growth of aluminum scandium nitride films on silicon suggest that this material platform could be applied for quantum electromechanical applications. Here, we model, fabricate, and characterize microwave frequency silicon phononic delay lines with transducers formed in an adjacent aluminum scandium nitride layer to evaluate aluminum scandium nitride films, at 32% scandium, on silicon interdigital transducers for piezoelectric transduction into suspended silicon membranes. We achieve an electromechanical coupling coefficient of 2.7% for the extensional symmetric-like Lamb mode supported in the suspended material stack and show how this coupling coefficient could be increased to at least 8.5%, which would further boost transduction efficiency and reduce the device footprint. The one-sided transduction efficiency, which quantifies the efficiency at which the source of microwave photons is converted to microwave phonons in the silicon membrane, is 10% at 5 GHz at room temperature and, as we discuss, there is a path to increase this toward near-unity efficiency based on a combination of modified device design and operation at cryogenic temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Performance of Vehicle Fuel System Elastomers and Plastics with Test Fuels Representing Gasoline Blended with 10% Ethanol (E10) and 16% Isobutanol (iBu16)

The compatibilities of fuel system elastomers and plastics were evaluated for test fuels containing 16 vol.% isobutanol (iBu16) and 10 vol.% ethanol (E10). Elastomers included two fluorocarbons, four acrylonitrile butadiene rubbers (NBRs), and one type of fluorosilicone, neoprene, and epichlorohydrin/ethylene oxide. Plastic materials included four nylon grades, three polyamides, polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), ethylene tetrafluoroethylene (ETFE), polyphenylene sulfide (PPS), high-density polyethylene (HDPE), polybutylene terephthalate (PBT), polyoxymethylene (POM), flexible polyvinylchloride (PVC), polyetherimide (PEI), polyetheretherketone (PEEK), and a phenol formaldehyde reinforced with glass fiber (GFPF). For each polymer material, the volume, mass, and hardness were measured before and after drying. Dynamic mechanical analysis (DMA) measurements were also performed on the dried specimens.For the elastomer materials the measured properties were similar for both fuels. The fluorocarbons and fluorosilicone swelled the least (~20%), while more moderate (20-45%) expansion occurred for the two NBR hose grades and (ECO). HNBR, neoprene, and silicone exhibited high swelling and softening, which likely precludes their use in many fuel systems. For the plastic materials, the observed swell was low; Nylon 11 swelled around 15%, but otherwise, their measured swell was <10%. Many of the plastics also showed sensitivity to alcohol type, as the E10 test fuel often imparted appreciably higher swell than iBu16. In general, the plastic materials showed good compatibility with the iBu16 and E10 test fuels. Here, the sole exception was the PVC material, which was structurally degraded from exposure to either fuel type. Compositional analysis showed high fuel retention in Nylon 12 and PVC. PVC also experienced a significant reduction in plasticizer compounds following exposure, which resulted in embrittlement and an increase in the glass-to-rubber transition temperature.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

For this work, we have examined the origins of polytype selection during metal-mediated molecular-beam epitaxy of GaN nanowires (NWs). High-angle annular dark-field scanning transmission electron microscopy reveals [111]-oriented zinc blende (ZB) NWs and [0001]-oriented wurtzite (WZ) NWs, with SixNy at the interface between individual NWs and the Si (001) substrate. Quantitative energy dispersive x-ray spectroscopy reveals a notably higher Si concentration of 7.0% ± 2.3% in zinc blende (ZB) NWs than 2.3% ± 1.2% in wurtzite (WZ) NWs. Meanwhile, density functional theory calculations show that incorporation of 8 at. % Si on the Ga sublattice inverts the difference in formation energies between WZ and ZB GaN, such that the ZB polytype of GaN is stabilized. This identification of Si and other ZB polytype stabilizers will enable the development of polytype heterostructures in a wide variety of WZ-preferring compounds.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Influence of hydrostatic pressure on hidden order, the Kondo lattice, and magnetism in URu 2 Si 2-x P x

Within the chemical substitution series URu 2 Si 2-x P x , there is an evolution in the ground-state behavior from hidden ordered (HO) for x ≲ 0.03, to Kondo lattice behavior with no ordering (NO) for 0.03 ≲ x ≲ 0.26, to antiferromagnetism (AFM-2) for 0.26 ≲ x ≲ 0.5 [A. Gallagher et al., Nat. Commun. 7, 10712 (2016); A. Gallagher et al., J. Phys.: Condens. Matter 29, 024004 (2016)]. To better understand what factors control this behavior, temperature-dependent electrical resistivity measurements are performed for this series under applied pressures P up to 20.5 kbar. Specimens in the HO x region show similarities to the parent compound, where HO transforms into antiferromagnetism (AFM-1) at a critical pressure (P c ). P c decreases with increasing x and collapses towards P = 0 near x ≈ 0.03, suggesting that AFM-1 occurs at ambient pressure for this concentration. No pressure-induced phase transitions are observed in the NO x region and the AFM-2 state is only weakly suppressed by P. Measurements further reveal that AFM-1 and AFM-2 are distinct from each other. Calculations of the wave functions using the tight-binding Hartree-Fock approximation are performed and show (i) that the radial probability distributions for the phosphorus ions are more tightly bound than those for the silicon and (ii) that the energy difference between the orbitals decreases with increasing x. The cumulative effect of these two factors is that Si → P substitution decreases the hybridization strength, which correlates with the weakening of HO. At large x, additional effects such as electrical charge tuning also play an important role in determining the ground-state

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Evaluating the Effect of Electrolyte Additive Functionalities on NMC622/Si Cell Performance

Unstable electrode/electrolyte interface is the major cause of degradation for silicon (Si)-based anodes for lithium (Li)-ion batteries. Development of functional electrolyte additives can provide a viable path toward stabilizing the dynamic Si/electrolyte interface, which will benefit the development of high energy density Li-ion batteries. Here, we evaluate polymerizable electrolyte additives with varying functional groups (fluorocarbon, thiophosphate, and fluorophosphazene). The additives are examined using LiNi 0.6 Mn 0.2 Co 0.2 O 2 /Si full cells where the cycle performance and impedance are measured. Electrochemical tests show that the fluorine-containing additives provide better passivation at the Si electrode, leading to enhanced full cell performance. Here, among the three additives examined, best electrochemical performance is observed from the fluorocarbon-containing compound, followed by fluorophosphazene- and thiophosphate-containing compounds. Characterization of the solid electrolyte interphase (SEI) on cycled electrodes using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) reveal that higher concentration of fluorine and lithium oxide, and lower concentration of carbonate and organic species correlate with enhanced electrochemical performance.

25 ENERGY STORAGE↗
DOE OSTI2023

Quantum Dots on Silicon-on-Insulator (QD/SOI): Nanoscale Strain and Band Structure Engineering (Final Report)

As the project titles indicate, the work focused on Group IV nanomembranes (NMs), thin functional layers, and interfaces, all with one or more dimensions at the nanoscale. The primary focus was discovery driven fundamental science. This approach led to surprising new, unexpected results that ended up being patentable and creating commercial value, but that were also high-impact science. Our effort divided into several overlapping thrusts: 1) strain engineering of NMs, via both lattice strain and externally applied strain, 2) interfaces between crystalline semiconductor NMs and other 2D sheets that are stacked or grown on each other, and 3) charge transport (electronics and optoelectronics) in thin layers, sheets, and surfaces. We accomplish these goals via 1) fabrication of new or higher-quality materials using NM approaches, 2) growth of new combinations, or 3) transfer and stacking to create new composites. The range of materials included combinations of Si, Ge, graphene, and several III-V compounds. The work has foundations in both nano- and mesoscale science.

36 MATERIALS SCIENCE↗
DOE OSTI2021

First-principles equation of state database for warm dense matter computation

We put together a first-principles equation of state (FPEOS) database for matter at extreme conditions by combining results from path integral Monte Carlo and density functional molecular dynamics simulations of the elements H, He, B, C, N, O, Ne, Na, Mg, Al, and Si as well as the compounds LiF , B 4 C , BN , CH 4 , CH 2 , C 2 H 3 , CH , C 2 H , MgO , and MgSiO 3 . For all these materials, we provide the pressure and internal energy over a density-temperature range from ~ 0.5 to 50 g cm - 3 and from ~ 10 4 to 10 9 K, which are based on ~ 5000 different first-principles simulations. We compute isobars, adiabats, and shock Hugoniot curves in the regime of L - and K -shell ionization. Invoking the linear mixing approximation, we study the properties of mixtures at high density and temperature. Furthermore, we derive the Hugoniot curves for water and alumina as well as for carbon-oxygen, helium-neon, and CH-silicon mixtures. We predict the maximal shock compression ratios of H 2 O , H 2 O 2 , Al 2 O 3 , CO , and CO 2 to be 4.61, 4.64, 4.64, 4.89, and 4.83, respectively. Finally we use the FPEOS database to determine the points of maximum shock compression for all available binary mixtures. We identify mixtures that reach higher shock compression ratios than their end members. We discuss trends common to all mixtures in pressure-temperature and particle-shock velocity spaces. In the Supplemental Material, we provide all FPEOS tables as well as computer codes for interpolation, Hugoniot calculations, and plots of various thermodynamic functions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Silicon carbide is a promising host material for spin-defect-based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near-telecom photoemission, high spin number, and nearly temperature-independent ground-state zero-field splitting. We report the realization of nanotesla shot-noise-limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieve a sensitivity of 50 nT/√Hz and a theoretical shot-noise-limited sensitivity of 3.5 nT/√Hz. This is accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Uncooled GeSn MWIR Photodetectors Using Fully Relaxed Thin Triple‐Step Buffer

GeSn photodetectors monolithically grown on Ge virtual substrates demonstrate mid-wave infrared (MWIR) detection at room temperature. The lattice mismatch between GeSn and Ge causes dislocations and compressive strain, creating leakage pathways and unwanted indirect band transitions. Designed thin Ge 0.91 Sn 0.09 triple-step buffer layers of ≈175 nm total thickness reduce dislocations and enable full relaxation, showing 100% lattice relaxation and smooth surface roughness of 0.83 nm with shorter auto-correlation length in surface morphology compared to single-step buffers. Ge 1-x Sn x photodetectors (x = 0.09, 0.12, and 0.15) on triple-step buffers with n-i-p configurations achieve lattice strain relaxations of 99%, 88%, and 80%, respectively. Ge 0.91 Sn 0.09 and Ge 0.88 Sn 0.12 show gradual variation in auto-correlation amplitude, while Ge 0.85 Sn 0.15 shows an increase due to lattice mismatch. Shockley–Read–Hall recombination current dominates at low reverse bias due to mismatch-induced dislocations, while band-to-band tunneling current dominates at higher reverse bias due to narrowing bandgap under strong electric fields. Here, the photodetectors show extended spectral response with increasing Sn composition of i-GeSn active layer sandwiched by barriers. Ge 0.88 Sn 0.12 and Ge 0.85 Sn 0.15 exhibit extended wavelength cut-offs of 3.12 and 3.27 µm at room temperature, demonstrating significant potential for silicon-based MWIR applications.

GeSn↗
DOE OSTI2020

Remote Epitaxial Growth of Compound Semiconductors through Graphene

Epitaxial growth has been widely used for high-quality growth of crystalline materials. However, epitaxial growth techniques usually require lattice match and similar thermal expansion coefficient between growth material and substrate, which blocks this growth technique from wide applicability. Recently, van der Waals (vdW) epitaxy has been demonstrated that allows to relax the limitation of epitaxial growth. vdW epitaxy on layered or two-dimensional (2D) materials is mediated by weak vdW interactions. In addition to these interactions, a substrate below 2D materials also plays a role to intervene in the epitaxial growth process, leaving room to realize a novel epitaxial growth process: remote epitaxy. Potential fluctuation—the difference between potential energy maxima and minima along the surface of the substrate—is influenced by this remote interaction; the fluctuation is predominant over the vdW force, due to the atomic thickness of 2D materials. The remote interactions can be controlled by modulation of polarities of 2D materials and epitaxy materials. Polar-material-based heterostructure, such as GaAs, InP, GaP and GaN with their substrate sandwiching 2D materials, enables the semiconductor film to be exfoliated from the underlying substrates through the 2D materials. This process is expected to open a novel avenue for the field of non-silicon electronics and photonics, where the ability to re-use graphene-coated substrates allows savings on the high cost of non-silicon substrates.

Lee, Kyusang↗
DOE OSTI2022

Improving the damage tolerance of Si 3 N 4 by forming laminate composites with refractory metals

The objective of this research was to demonstrate that the damage tolerance of Si 3 N 4 could be significantly improved by forming laminate composites with refractory metals, providing materials that undergo graceful failure, rather than the fast-fracture mechanism exhibited by monolithic Si 3 N 4 . A damage tolerant Si 3 N 4 could be used as a ring material in an all-ceramic bearing, decreasing the chance for catastrophic failure if the ring is stressed in tension during operation. The technical approach formed a laminate composite material using alternating Si 3 N 4 -metallic layers, with both outer layers being Si 3 N 4 to take advantage of its greater wear resistance, chemical stability, and thermal stability. The metallic layers are designed to arrest any cracks in the outer layers, thus producing a toughened Si 3 N 4 and avoiding the catastrophic failure behavior exhibited by monolithic ceramics. The laminate composites were fabricated using a combination of tape-casting Si 3 N 4 and metals from slurries, as well as metal foils, followed by hot pressing at 1500°C. The metallic materials employed were chromium, titanium, and tantalum. Analysis confirmed that the interfaces were well formed, and the laminates with chromium and titanium formed intermetallic compounds more readily than the composites with tantalum. The Si 3 N 4 -Ta laminates demonstrated crack deflection and bridging behavior during failure and flexural strength of 800–900 MPa. The hardness and elastic modulus of Si 3 N 4 -Ta laminates measured by nanoindentation were similar to those reported in literature. The hardness across the interface of the Si 3 N 4 -Ta composite varied according to the composition of the interface, which displayed a profile indicative of a diffusion bond.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A Molten Salt Electrochemical Process for the Preparation of Cost-Effective p-Block (Coating) Materials

Solar energy applications rely heavily on p-block elements and transition metals. Silicon is, by far, the most commonly used material in photovoltaic cells and accounts for about 85% of modules sold presently. Of late, thin film photovoltaic cells have gained momentum because of their higher efficiencies. Most of these thin film devices are made out of just five elements, namely, cadmium, tellurium, selenium, indium, gallium and copper. The present manuscript describes an elegant and inexpensive molten salt-based electrolytic process for fabricating a tellurium-coated metallic substrate. A three-electrode set up was employed to coat iridium with tellurium from a molten bath containing lithium chloride, lithium oxide and tellurium tetrachloride (LiCl-Li 2 O-TeCl 4 ) at 650 °C for a duration ranging from 30 to 120 min under a galvanostatic mode. The tellurium coating was observed to be thick, uniform, smooth and homogeneous. Additionally, the deposited tellurium did not chemically react with the iridium substrate to form intermetallic compounds, which is a good feature from the standpoint of the device’s performance characteristics. The present process, being generic in nature, shows the potential for the manufacture of both the coated substates and high-purity elements not just for tellurium but also for other p-block elements.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Task 12 PV Sustainability - Human Health Risk Assessment Methods for PV, Part 3: Module Disposal Risks

End-of-life management is important for addressing large future photovoltaic (PV) waste volumes and conserving raw materials for use in new PV modules. In regions without regulatory mandates for PV recycling, end-of-life PV modules can be disposed in accordance with general waste laws. Given the use of various metals as raw materials in semiconductor compounds and electrical contacts in commercial PV modules, some stakeholders have raised concerns regarding potential environmental impacts if PV modules are subject to improper disposal instead of being recycled or disposed in sanitary landfills, as is required in most world regions. To evaluate these concerns, screening-level risk assessment methods are developed herein that evaluate potential human health risks from groundwater and surface (air, soil, surface water) exposure pathways. The methods estimate potential impacts from disposal of end-of-life (EOL) PV modules in non-sanitary landfills under the following worst-case conditions: no leachate collection or groundwater monitoring, no liner for preventing leachate migration, uncovered waste, and lack of stormwater management. Examining worst-case conditions allows the exploration of maximum potential risk to attempt to ensure disposal does not increase health risk above regulatory thresholds. Specifically, this report presents an analysis of potential human health risks associated with non-sanitary landfill disposal for three PV technologies, focusing on release of the highest-prioritized chemical element for each: lead (Pb) in crystalline-silicon (c-Si) PV modules, cadmium (Cd) in thin film cadmium telluride (CdTe) PV modules, and selenium (Se) in thin film copper indium selenide (CIS) PV modules. The prioritization of these chemical elements for analysis is based on stakeholder interest. Because the methodology is chemical-specific, the risk assessment results for these chemicals cannot be directly generalized to other chemicals, although the risk assessment methodology can be applied to other chemicals. If the chemicals chosen are indeed the ones presenting greatest risk, then the results herein should represent the upper bound of health risk from exposure to a single constituent.

14 SOLAR ENERGY↗
DOE OSTI2020

Tailorable Micelle Morphology in Self-Assembling Block Copolymer Gels for Templating Nanoporous Ceramics

The self-assembly of block copolymers offers opportunities for the facile organization and templating of inorganic nanomaterials. Here, we describe a morphology map for a poly(methyl methacrylate)-b-poly(n-butyl acrylate)-b-poly(methyl methacrylate) (PMMA-b-PnBA-b-PMMA) block copolymer/polycarbosilane system that allows for tunable control over nanoscale micelle geometry via manipulation of the preceramic polymer content. We produced gels with spherical, wormlike, and bicontinuous morphologies, which were processed to create silicon carbide-based ceramic structures with tunable nanoscale porosities. The role of the constituent polymers in influencing the structure and rheology of this system is discussed. The PMMA-b-PnBA-b-PMMA block copolymer/preceramic polymer system offers a number of advantages including: (i) commercial availability, (ii) rapid self-assembly kinetics, and (iii) successful conversion of the self-assembled nanostructure to ceramic via pyrolysis. Finally, this system may be useful for catalytic, structural, or thermal applications in both industrial and academic settings because of its ease of use and relatively inexpensive reagents.

36 MATERIALS SCIENCE↗