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Three inflatable array antennas recently developed for spacecraft applications are a 3.3m x 1.0m L-band synthetic aperture radar (SAR) array, a 1.0m-diameter X-band telecom reflectarray, and a 3m-diameter Ka-band telecom reflectarray.
NASA’s Katherine Johnson Independent Verification and Validation (IV&V) Independent Test Capability (ITC) Team develops high fidelity software-only simulations (or “digital-twins”) of NASA’s most critical missions that are then used for software verification and validation (V&V). One such digital-twin simulator nearing maturity is the Psyche Hardware Abstraction Simulation Environment (PHASE). PHASE utilizes an instruction set simulator along with ITC-developed avionics models. PHASE includes a newly-developed model of the telecom hardware with a high-fidelity downlink interface, capable of supporting reconfigurable downlink data rates and transmission modes. The different downlink transmission modes allow more processing to be ceded from software onto the telecom hardware. Thus, we are able to monitor the performance of the downlink software module in the time-partitioned OS and perform more realistic dynamic testing based on software’s resource utilization. This presentation will cover PHASE, avionics modeling, the downlink model, and its usage for flight software performance testing.
The Mars Science Laboratory (MSL) strategic communications planning toolset selects orbiter relay opportunities that the rover will use for transmitting data back to Earth. The toolset was extensively reworked in preparation for the Interior Exploration using Seismic Investigations, Geodesy and Heat Transport's (InSight) arrival at Mars in November 2018 and the regular use of Mars Atmosphere and Volatile Evolution (MAVEN) and Trace Gas Orbiter (TGO) orbiters as relay assets in addition to Mars Reconnaissance Orbiter (MRO) and 2001 Mars Odyssey (ODY). Overflight selection criteria was automated in the new toolset to take into account overflight deconfliction and down-selection as well as tactical timeline planning impacts and total data return. This was done while remaining flexible and configurable for changing mission priorities. As the Curiosity rover ages, the MSL planning team must overcome issues such as reduced budgets, memory bank anomalies, and reduced power availability. These are some examples of factors that affect the strategic communications planning toolset. In addition to adapting to evolving internal mission needs, the toolset must also be flexible to changes in the relay planning interface with other landers. The concept of shared relay or “split passes” was introduced when InSight began operating on Mars just 600 kilometers away and at the same longitude as MSL. This proximity meant that orbiters could now communicate with two landers during the same relay session. Over time, this new operational use-case became common practice as InSight and MSL settled into relay planning negotiations. Today, many TGO relay sessions are shared between MSL and InSight. As more orbiters pursue integrating this capability into nominal relay operations, and more landers arrive on Mars, the strategic communications process and toolsets increases in complexity. Development of a single tool that schedules relay sessions for all orbiters and landers simultaneously may become necessary as the number of Martian spacecraft increases. Examples of how toolset selection criteria and capabilities have helped or hindered MSL planning will be presented. Ongoing improvements to MSL toolsets and processes, as well as to shared relay tools such as Mars Relay Operations Service (MaROS) and General Telecom Predictor (GTP) are also discussed in this paper. Examples of how toolset selection criteria and capabilities have helped or hindered MSL planning will be presented. Ongoing improvements to MSL toolsets and processes, as well as to shared relay tools such as Mars Relay Operations Service (MaROS) and General Telecom Predictor (GTP) are also discussed in this paper.
Nanocrystals (NCs) appear as a promising platform for cost effective infrared optoelectronics, while offering a simplified coupling to the CMOS platform. However, this perspective is slowed down by toxicity concerns, the most effective materials being based on Pb and Hg. There is currently a large effort to bring forth new platforms that are active in the infrared with a reduced heavy metal content. Here, in this study, the focus is on silver chalcogenides, which, thanks to a combination of inter‐ and intraband transitions, is suited to cover both short and mid wave infrared ranges. However, this material being less mature, the achieved photoluminescence (PL) appears quite broad, which is problematic for device integration. Here, it is demonstrated that a strong control over the PL spectrum can be obtained through integration into a dielectric cavity that magnifies the electric field by a factor 20 and narrows the PL full width at half maximum down to 15 nm for an emission at telecom wavelength. The PL is also highly directional to avoid most waveguiding effects which is of utmost interest for enhancing the efficiency of NC‐based light emitting diodes.
The complex metal hydride 2LiH:1Mg(NH2)2 has emerged as a promising material for stationary hydrogen storage applications, such as seasonal storage or energy backup systems, due to its high volumetric and gravimetric capacities and robust reversibility. However, its widespread adoption is hindered by sluggish reaction rates, performance degradation upon cycling, and improper end-use cases. To address these problems and better understand the desorption pathway, we used metal borohydrides (MBH4; M = Li–Cs) as chemical probes. A thorough analysis of the bulk behavior of all six materials, including hydrogen cycling experiments, X-ray absorption spectroscopy, FTIR, pXRD, solid-state NMR, and ab initio DFT simulations, shows that the borohydride additives decrease the activation energy of hydrogen release by about 20 kJ/mol for MBH4@2:1 materials versus pristine. Furthermore, more surface-sensitive studies show that the amide-to-imide desorption pathway in these materials, while essentially complete in the bulk, is incomplete in the near-surface region, suggesting an “inverse core–shell” desorption mechanism for amide dehydrogenation to imide. The kinetic enhancements produced by MBH4 additives (M = K, Rb, and Cs) are attributed to the destabilization of the amide N–H bond and interaction with the LiH/Mg(NH2)2 interface to promote H–H bond formation. An inverse core-shell mechanism is also operative in the hydrogen desorption for the 2LiH:1LiNH2 system, suggesting this may be a general feature of amides. Given the fast dehydrogenation rate and large gravimetric capacity, these materials satisfy these requirements for telecom backups and seasonal microgrid storage applications.
Abstract Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N 2 /H 2 ) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and C i centers while passivating the more common G-centers. The C i center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the C i center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.
Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors.
Emerging communications and computing technologies will rely ever-more on expanding the useful radio frequency spectrum into the millimeter-wave and terahertz frequency range. Both classical and quantum applications would benefit from advancing integration and incorporation of millimeter-wave and electro-optic technologies into common devices, such as modulators. Here we demonstrate an integrated triply-resonant, superconducting electro-optic transducer. Our design incorporates an on-chip 107 GHz niobium titanium nitride superconducting resonator, modulating a thin-film lithium niobate optical racetrack resonator operating at telecom wavelengths. We observe a maximum photon transduction efficiency of η OE ≈ 0.82 × 10 −6 and an average single-photon electro-optic interaction rate of g 0 /2π ≈ 0.7 kHz. We also present a study and analysis of the challenges associated with the design of integrated millimeter-wave resonators and propose possible solutions to these challenges. Our work paves the way for further advancements in resonant electro-optic technologies operating at millimeter-wave frequencies.
Robust spin-photon interfaces with optical transitions in the telecommunication band are essential for quantum networking technologies. Erbium (Er) ions are the ideal candidate with environmentally protected transitions in telecom-C band. Finding the right technologically compatible host material to enable long-lived spins remains a major hurdle. We introduce a new platform based on Er ions in cerium dioxide (CeO 2 ) as a nearly-zero nuclear spin environment (0.04%) epitaxially grown on silicon, offering silicon compatibility for opto-electrical devices. Our studies focus on Er 3+ ions and show a narrow homogeneous linewidth of 440 kHz with an optical coherence time of 0.72 μs at 3.6 K. The reduced nuclear spin noise enables a slow spin-lattice relaxation with a spin relaxation time up to 2.5 ms and an electron spin coherence time of 0.66 μs (in the isolated ion limit) at 3.6 K. These findings highlight the potential of Er 3+ :CeO 2 platform for quantum networks applications.
Colour centres provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T centre in silicon is an emerging spin–photon interface that combines telecom O-band optical transitions and an electron spin in a scalable photonics platform. Here, in this study, we integrate T centres into single-mode photonic waveguides in a silicon-on-insulator platform. We demonstrate the initialization, coherent control and state read-out of a three-qubit register based on the electron spin of a T centre coupled to a hydrogen and a silicon nuclear spin. The spin register exhibits spin echo coherence times of 0.41(2) ms for the electron spin, 112(12) ms for the hydrogen nuclear spin and 67(7) ms for the silicon nuclear spin. We use nuclear–nuclear two-qubit gates to generate entanglement between the two nuclear spins with a fidelity of F = 0.77(3) and a coherence time of ${T}_{2}^{* }=2.60(8)$ ms. Our results show that a T centre in silicon photonics can realize a multi-qubit register with an optical interface for quantum communication.
Superconducting quantum processors are a leading platform for implementing practical quantum computation algorithms. Although superconducting quantum processors with hundreds of qubits have been demonstrated, their further scale-up is constrained by the physical size and cooling power of dilution refrigerators. This constraint can be overcome by constructing a quantum network to interconnect qubits hosted in different refrigerators, which requires microwave-to-optical transducers to enable low-loss signal transmission over long distances. Although various designs and demonstrations have achieved high-efficiency and low-added-noise transducers, a coherent photonic link between separate refrigerators has not yet been realized. Here, in this work, we experimentally demonstrate coherent signal transfer between two superconducting circuits housed in separate dilution refrigerators, enabled by a pair of frequency-matched aluminium nitride electro-optic transducers connected via a 1-km telecom optical fibre. The optical frequency matching between two transducers is realized by an asymmetric photonic molecule design, and an overall 80 dB improvement in transduction efficiency over commercial electro-optic modulators is achieved, paving the way towards a fully quantum-enabled link. This work provides critical design guidelines for scalable superconducting quantum networks interconnected by photonic links.
Single-photon emitters are essential components of emerging quantum technologies, including secure communication and quantum computing. Single-walled carbon nanotubes (SWCNTs) have emerged as a promising platform for quantum light sources due to their quasi-one-dimensional excitonic host structure and compatibility with telecom photonic systems. Recent advances in deterministic defect engineering—most notably the development of organic color centers (OCCs)—have enabled stable, chemically controllable, and spectrally tunable single-photon emission. OCC-based emitters have demonstrated single-photon purity exceeding 99% and, more recently, room-temperature photon indistinguishability, placing them among the few solid-state systems with quantum-grade performance under ambient conditions. This review surveys progress in the field from three complementary perspectives: chemical synthesis and quantum defect engineering, computational studies of structure-property relationships and excitonic behavior, and experimental investigations of quantum optical properties. We also discuss alternative approaches, including air-suspended SWCNTs and hybrid van der Waals heterostructures, highlighting opportunities and open challenges for scalable integration into quantum photonic platforms.
Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here, we present a model that encapsulates the essential physics of coupling to phonons, which governs the behavior of real single-photon emitters, and critically evaluate several approximations that are commonly utilized. Emission in the telecom wavelength range is highly desirable, but our model shows that nonradiative processes are greatly enhanced at these low photon energies, leading to a decrease in efficiency. Our results suggest that reducing the phonon frequency is a fruitful avenue to enhance the efficiency.
Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er 3+ ) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for quantum networks it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. Here, in this work, we demonstrate the optical isolation of single Er 3+ ions in CMOS-compatible titanium dioxide (TiO 2 ) thin films monolithically integrated on a silicon-on-insulator photonics platform. Our results demonstrate an initial step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er 3+ doped thin films.
We propose a method for converting single microwave photons to single optical sideband photons based on spinful impurities in magnetic materials. This hybrid system is advantageous over previous proposals because (i) the implementation allows much higher transduction rates (10 3 times faster at the same optical pump Rabi frequency) than state-of-the-art devices, (ii) high-efficiency transduction is found to happen in a significantly larger space of device parameters (in particular, over 1 GHz microwave detuning), and (iii) it does not require mode volume matching between optical and microwave resonators. We identify the needed magnetic interactions as well as potential materials systems to enable this speed up using erbium dopants for telecom compatibility. This is an important step towards realizing high-fidelity entangling operations between remote qubits and will provide additional control of the transduction through perturbation of the magnet.
Entanglement is an extraordinary feature of quantum mechanics. Sources of entangled optical photons were essential to test the foundations of quantum physics through violations of Bell’s inequalities. More recently, entangled many-body states have been realized via strong nonlinear interactions in microwave circuits with superconducting qubits. Here, we demonstrate a chip-scale source of entangled optical and microwave photonic qubits. Our device platform integrates a piezo-optomechanical transducer with a superconducting resonator which is robust under optical illumination. We drive a photon-pair generation process and employ a dual-rail encoding intrinsic to our system to prepare entangled states of microwave and optical photons. We place a lower bound on the fidelity of the entangled state by measuring microwave and optical photons in two orthogonal bases. This entanglement source can directly interface telecom wavelength time-bin qubits and gigahertz frequency superconducting qubits, two well-established platforms for quantum communication and computation, respectively. Published by the American Physical Society 2024
A first-principles study of a carbon-nitrogen (CN) impurity complex in silicon is presented as an isoelectronic alternative to the T center [(CCH) Si ]. The latter has been pursued for applications in quantum information science, yet its sensitivity to the presence of hydrogen is still problematic. Our proposed complex has no hydrogen, thereby eliminating this issue. First, we show that the CN complex is stable against decomposition into substitutional and interstitial defects. Next, we show that due to being isoelectronic to the T center, the CN complex has a similar electronic structure, and therefore could be used in similar applications. We assess several low-energy configurations of the CN complex, finding (CN) Si to be stable and have the largest Debye-Waller factor. We predict a zero-phonon line (ZPL) of 828 meV (in the telecom S-band) and a radiative lifetime of 4.2 μs, comparable to the T center. Due to the presence of a bound exciton, choice of the exchange-correlation functional and also supercell-size scaling of the ZPL and transition dipole moment require special scrutiny; we rigorously justify our extrapolation schemes that allow computing values in the dilute limit.
Narrow-linewidth lasers enable a variety of high-precision applications, such as sensing, optical clocks, and microwave frequency generation. Advances in photonic integration in the last decade led to the development of ultra-low-noise integrated semiconductor lasers, mostly in the telecom wavelength range. In recent years, the demand for high-performance lasers at shorter wavelengths skyrocketed, driven by applications in sensing and atom trapping. Low-noise lasers are of particular importance in this spectral range, as they are essential for optical clocks. Here, we will review recent progress in narrow-linewidth lasers at shorter wavelengths, present results on a hybrid-integrated low-noise laser at 780 nm and discuss the perspectives and challenges of high-performance semiconductor lasers in the visible and near-infrared.