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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Dual-Band Optical Bench for Terahertz Radiometer for Outer Planet Atmospheres (TROPA)

We have developed a wide-band dual frequency spectrometer for use in deep space planetary atmospheric spectroscopy. The instrument uses a dual-band architecture, both to be able to observe spectral lines from a wide range of atmospheric species, and to allow a higher precision retrieval of temperature/pressure/partial pressure and wind profiles. This dual-band approach requires a new design for the optical bench to couple both frequencies into their respective receivers.

submillitmeter↗
NASA NTRS1990

Electro-optical Probing Of Terahertz Integrated Circuits

Electro-optical probe developed to perform noncontact, nondestructive, and relatively noninvasive measurements of electric fields over broad spectrum at millimeter and shorter wavelengths in integrated circuits. Manipulated with conventional intregrated-circuit-wafer-probing equipment and operated without any special preparation of integrated circuits. Tip of probe small electro-optical crystal serving as proximity electric-field sensor.

Bhasin, K. B.↗
NASA NTRS1991

International Symposium on Space Terahertz Technology, 1st, University of Michigan, Ann Arbor, Mar. 5, 6, 1990, Proceedings

Problems, proposed solutions, and recent results related to the development of solid-state oscillators, detectors, mixers, diode multipliers, and antennas at THz frequencies are addressed. Individual topics considered include: submillimeter heterodyne remote sensing of upper atmospheric gases, planar dipole array antenna with an elliptical lens, twin slot antenna structures integrated with microbolometer detectors for 94-GHz imaging. Also discussed are: quantum-well and quantum-barrier diodes for generating submillimeter wave power, planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths, GaAs Schottky barrier varactor diodes for submillimeter wavelength power generation, planar doped barrier devices for subharmonic mixers.

Ulaby, Fawwaz↗
NASA NTRS1993

Superconducting terahertz mixer using a transition-edge microbolometer

We present a new device concept for a mixer element for THz frequencies. This uses a superconducting transition-edge microbridge biased at the center of its superconducting transition near 4.2 K. It is fed from an antenna or waveguide structure. Power from a local oscillator and an RF signal produce a temperature and resulting resistance variation at the difference frequency. The new aspect is the use of a very short bridge in which rapid (less than 0.1 ns) outdiffusion of hot electrons occurs. This gives large intermediate frequency (IF) response. The mixer offers about 4 GHz IF bandwidth, about 80 ohm RF resistive impedance, good match to the IF amplifier, and requires only 1-20 nW of local oscillator power. The upper RF frequency is determined by antenna or waveguide properties. Predicted mixer conversion efficiency is 1/8, and predicted double-sideband receiver noise temperatures are 260 and 90 K for transition widths of 0.1 and 0.5 Tc, respectively.

Prober, D. E.↗
NASA NTRS1994

Fiber-Optic Terahertz Data-Communication Networks

Network protocols implemented in optical domain. Fiber-optic data-communication networks utilize fully available bandwidth of single-mode optical fibers. Two key features of method: use of subpicosecond laser pulses as carrier signals and spectral phase modulation of pulses for optical implementation of code-division multiple access as multiplexing network protocol. Local-area network designed according to concept offers full crossbar functionality, security of data in transit through network, and capacity about 100 times that of typical fiber-optic local-area network in current use.

Chua, Peter L.↗
NASA NTRS2000

Fabrication of an Aluminum Based Hot Electron Mixer for Terahertz Applications

Aluminum based diffusion cooled hot electron bolometers (HEB) mixers, predicted to have better noise, bandwidth and to require less LO power than Nb based diffusion cooled HEBs, have been fabricated. Preliminary DC tests were performed. The bolometer elements consisted of short (0.1 to 0.3 micron), narrow (0.08 to 0. 15 micron) and thin (11 nm) aluminum wires connected to large contact pads consisting of a novel trilayer Al/Ti/Au. The patterns were defined by electron beam lithography and the metal deposition involved a double angle process, the Aluminum wires being deposited straight on and the pads being deposited at a 45 degree angle without breaking vacuum. The Al/Ti/Au trilayer was developed to provide a way of making contact between the aluminum wire and the gold antenna. The Titanium layer acts as a diffusion barrier to avoid damage of the Aluminum contact and bolometer wire and to lower the transition temperature of the pads to below that of the bolometer wire. The Au layer avoids the formation of an oxide on the Ti layer and provides good electrical contact to the IF/antenna structure. The resistance of the bolometers as a function of temperature was measured. It is clear that below the transition temperature of the wire (1.8K) but above the transition temperature of the contact pads (0.6K), the proximity effect drives most of the bolometer wire normal, causing a very broad transition. This effect should not affect the performance of the bolometers since they will be operated at a temperature below the TC of the pads. This is evident from the IV characteristics measured at 0.3K. RF characterization tests will begin shortly.

Echternach, P. M.↗
NASA NTRS1998

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Ning, Cun-Zheng↗
NASA NTRS2005

Phase Modulator with Terahertz Optical Bandwidth Formed by Multi-Layered Dielectric Stack

An optical phase modulator includes a bandpass multilayer stack, formed by a plurality of dielectric layers, preferably of GaAs and AlAs, and having a transmission function related to the refractive index of the layers of the stack, for receiving an optical input signal to be phase modulated. A phase modulator device produces a nonmechanical change in the refractive index of each layer of the stack by, e.g., the injection of free carrier, to provide shifting of the transmission function so as to produce phase modulation of the optical input signal and to thereby produce a phase modulated output signal.

Andrew S Keys↗