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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Petrick, David J.↗

Method and apparatus for detection and control of prelasing in a Q-switched laser

The present invention detects prelasing in a Q-switch laser and terminates laser operation upon such detection. A detector senses the presence of light beyond a Q-switch and generates an appropriate electrical signal. A comparison stage circuit compares this detector signal with an established threshold value indicative of prelasing and generates a trigger signal if this detector signal exceeds this threshold value. A control stage circuit receives both this trigger value and a sampled Q-switch signal indicative of an opening of the Q-switch. The control stage circuit terminates operation of the laser if the trigger signal from the comparison stage is received while the sampled Q-switch signal is being received to avoid the effects of prelasing. Appropriate delays and timing sequences are established.

Lockard, George E.↗

Control of chiral orbital currents in a colossal magnetoresistance material

Colossal magnetoresistance (CMR) is an extraordinary enhancement of the electrical conductivity in the presence of a magnetic field. It is conventionally associated with a field-induced spin polarization that drastically reduces spin scattering and electric resistance. Ferrimagnetic Mn 3 Si 2 Te 6 is an intriguing exception to this rule: it exhibits a seven-order-of-magnitude reduction in ab plane resistivity that occurs only when a magnetic polarization is avoided 1,2 . Here, we report an exotic quantum state that is driven by ab plane chiral orbital currents (COC) flowing along edges of MnTe 6 octahedra. The c axis orbital moments of ab plane COC couple to the ferrimagnetic Mn spins to drastically increase the ab plane conductivity (CMR) when an external magnetic field is aligned along the magnetic hard c axis. Consequently, COC-driven CMR is highly susceptible to small direct currents exceeding a critical threshold, and can induce a time-dependent, bistable switching that mimics a first-order ‘melting transition’ that is a hallmark of the COC state. Further, the demonstrated current-control of COC-enabled CMR offers a new paradigm for quantum technologies.

36 MATERIALS SCIENCE↗

First operation of a multi-channel Q-Pix prototype: measuring transverse electron diffusion in a gas time projection chamber

We report measurements of the transverse diffusion of electrons in P-10 gas (90% Ar, 10% CH 4 ) in a laboratory-scale time projection chamber (TPC) utilizing a novel pixelated signal capture and digitization technique known as Q-Pix. The Q-Pix method incorporates a precision switched integrating transimpedance amplifier whose output is compared to a threshold voltage. Upon reaching the threshold, a comparator sends a 'reset' signal, initiating a discharge of the integrating capacitor. The time difference between successive resets is inversely proportional to the average current at the pixel in that time interval, and the number of resets is directly proportional to the total collected charge. We developed a 16-channel Q-Pix prototype fabricated from commercial off-the-shelf components and coupled them to 16 concentric annular anode electrodes to measure the spatial extent of the electron swarm that reaches the anode after drifting through the uniform field of the TPC. The swarm is produced at a gold photocathode using pulsed UV light. The measured transverse diffusion agrees with simulations in PyBoltz across a range of operating pressures (200–1500 Torr). These results demonstrate that a Q-Pix readout can successfully reconstruct the ionization topology in a TPC.

47 OTHER INSTRUMENTATION↗

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (~95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. Furthermore, these results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV. Index Terms— GaN, HEMT, power electronics, hard switching, breakdown voltage, overvoltage, ruggedness, reliability.

42 ENGINEERING↗

Passive Gas-Gap Heat Switches for Use in Low-Temperature Cryogenic Systems

We present the current state of development in passive gas-gap heat switches. This type of switch does not require a separate heater to activate heat transfer but, instead, relies upon the warming of one end due to an intrinsic step in a thermodynamic cycle to raise a getter above a threshold temperature. Above this temperature sequestered gas is released to couple both sides of the switch. This enhances the thermodynamic efficiency of the system and reduces the complexity of the control system. Various gas mixtures and getter configurations will be presented.

Heat Switches↗

Passive Gas-Gap Heat Switches for Use in Low-Temperature Cryogenic Systems

We present the current state of development in passive gas-gap heat switches. This type of switch does not require a separate heater to activate heat transfer but, instead, relies upon the warming of one end due to an intrinsic step in a thermodynamic cycle to raise a getter above a threshold temperature. Above this temperature sequestered gas is released to couple both sides of the switch. This enhances the thermodynamic efficiency of the system and reduces the complexity of the control system. Various gas mixtures and getter configurations will be presented.

Gas-gap↗

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

Resolving sub-10 nm spin switching and the associated terahertz (THz) electrodynamics during the colossal magnetoresistance (CMR) transition is a definitive frontier in reaching the fundamental spatial, temporal, and energy-dissipation limits of spin-electronics. Yet, simultaneous control of high magnetic field, cryogenic environment, and nanometer resolution has remained an elusive benchmark for THz nanoscopy, leaving the local THz dynamics of these transitions largely unexplored. Here, we overcome these limitations by utilizing a custom-built cryogenic magneto-THz scattering-type scanning near-field optical microscopy (cm-THz-sSNOM) to resolve the near-field THz spectroscopic evolution of the magnetic field-driven CMR transition in a manganite single crystal. Our measurements provide a nanoscale visualization of the THz conductivity, capturing the moment that magnetic-field-induced spin switching triggers the transition from an antiferromagnetic insulator to a ferromagnetic metal. An ellipsoidal near-field model reveals a multi-scale transition initiated by 1–2 nm isolated spin-flip sites at low magnetic fields, which coalesce into ∼15 nm conducting regions as the threshold field is approached. These results provide an nano-THz view of CMR switching, establishing an analysis framework for mapping spin–charge–lattice–orbit–coupled dynamics at spatial scales that transcend the nominal sSNOM resolution.

Haeuser, Samuel [Iowa State University, Ames, IA (↗

A Bioinspired Artificial Injury Response System Based on a Robust Polymer Memristor to Mimic a Sense of Pain, Sign of Injury, and Healing

Abstract Flexible electronic skin with features that include sensing, processing, and responding to stimuli have transformed human–robot interactions. However, more advanced capabilities, such as human‐like self‐protection modalities with a sense of pain, sign of injury, and healing, are more challenging. Herein, a novel, flexible, and robust diffusive memristor based on a copolymer of chlorotrifluoroethylene and vinylidene fluoride (FK‐800) as an artificial nociceptor (pain sensor) is reported. Devices composed of Ag/FK‐800/Pt have outstanding switching endurance >10 6 cycles, orders of magnitude higher than any other two‐terminal polymer/organic memristors in literature (typically 10 2 –10 3 cycles). In situ conductive atomic force microscopy is employed to dynamically switch individual filaments, which demonstrates that conductive filaments correlate with polymer grain boundaries and FK‐800 has superior morphological stability under repeated switching cycles. It is hypothesized that the high thermal stability and high elasticity of FK‐800 contribute to the stability under local Joule heating associated with electrical switching. To mimic biological nociceptors, four signature nociceptive characteristics are demonstrated: threshold triggering, no adaptation, relaxation, and sensitization. Lastly, by integrating a triboelectric generator (artificial mechanoreceptor), memristor (artificial nociceptor), and light emitting diode (artificial bruise), the first bioinspired injury response system capable of sensing pain, showing signs of injury, and healing, is demonstrated.

36 MATERIALS SCIENCE↗

Integrated optical components in thin films of polymers

The results will be reported on the study of integrated optical components based on nonlinear optical polymeric films. Polymers poly(methyl methacrylate) (PMMA) and polyimide (PI) doped with organic laser dyes 4-dicyanomethylene-2-methyl-6-p dimethylaminostyryl-4H pyran (DCM) and 1, 3, 5, 7, 8 - pentamethyl-2,6 -diethyl-pyrromethene -BF2-complex (Pyrommethene 567, PM-567) were selected as materials for light guiding films. Additionally, UV polymerized polydiacetylene (PDA) on glass substrate was used as a waveguide material. Optical waveguides were fabricated using spin coating of preoxidized silicon wafers (1.5 micrometer silicon oxide layer) with organic dye/polymer solution followed by soft baking. the modes in slab waveguides were studied using prism coupling techniques. Measured values of mode coupling angles in multimode waveguides were used to calculate film thickness and refractive index for different polarizations. Refractive index anisotropy was found in PDA waveguide. The optimal conditions of spin coating for single mode waveguide fabrication were estimated. Propagation losses were measured by collecting the light scattered from the trace of a propagating mode either by scanning photo detector or by CCD camera. Different types of light coupling techniques were used including end-dire coupling, prism and grating coupling. Mechanical printing technique was developed for coupling grating fabrication resulting in gratings with 4% diffraction efficiency. The gratings demonstrated good stability with diffraction efficiency relaxation rate 2.4 dB/hour at a temperature approximately 15-20 C below glass transition point. Dye doped waveguides were transversally pumped with frequency doubled Nd:YAG Q-switched laser producing intensive light emission with apparent 6 kW/sq cm pump threshold and spectrum narrowing near 617 nm peak in the case of DCM doped waveguide. PM-567 doped waveguide pumped with CW Ar(+) laser (514 nm wavelength) far below threshold (0.1 W/sq.cm pump power) demonstrated emission spectrum narrowing near 616 nm peak with 18% power conversion slope efficiency. In this case emission spectrum modification was caused by the enhanced light absorption along the direction of propagating waveguide modes. Changing length, thickness, and other morphlogical waveguide parameters one can modify emission spectrum in predictable direction. The results show that polymeric waveguides, especially based on high temperature polymers such as Pl, can be used to produce a varietiy of active and passive silicon compatible integrated optical components for aerospace applications.

Sarkisov, Sergey↗

Composite Material Switches

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Javadi, Hamid↗

Composite Material Switches

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Hamid H Javadi↗

Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

Burns, Bradley M.↗

Siple station experiments on wave-particle interactions in the magnetosphere

Natural and controlled whistler-mode signals have been used to study nonlinear mechanisms of wave growth and wave-wave interactions (WWI) in the magnetosphere; three general classes of WWI (triggering, suppression, and entrainment) are identified and interpreted in terms of a model based on cyclotron resonance interaction. This model is also used to estimate the wave field intensity associated with different types of WWI. A new type of triggered emission, the band-limited impulse (BLI) is interpreted in terms of the switching of phase-bunched currents. In addition, an experiment to find a threshold for the excitation of the coherent wave instability is discussed, and observed VLF wave-induced transient bursts of X-rays, light and E-region ionization enhancements are considered with regard to a step function wave interacting with all resonant electrons in a given energy range.

Helliwell, R. A.↗

B-ISBN Onboard Processing Fast Packet Switch Developed

Future satellite communications applications will require a packet-switched onboard satellite processing system to route packets at very high speeds from uplink beams to different downlink beams. The rapid emergence of point-to-multipoint services, and the important role of satellites in a national and global information infrastructure, makes the multicast function essential to a fast packet switch (FPS). NASA Lewis Research Center's Digital System Technology Branch has been studying possible architectures for high-speed onboard-processing satellite systems. As part of this research, COMSAT Laboratories developed a broadband integrated services digital network (B-ISDN) fast packet switch for Lewis that was delivered on December 1994. The fast packet switch consists of eight inputs and eight outputs that can receive and transmit data, respectively, at a rate of 155 Mbps. The switch features multiple priorities (three) and multiple-size (three) satellite virtual cells that are similar to ATM cells in length (52 bytes). In addition, the fast packet switch features a congestion-control algorithm that allows users to set different thresholds for individual destination ports, thus throttling back the traffic from the transmitting port.

Source record↗

Transverse Mode Dynamics of VCSELs Undergoing Current Modulation

Transverse mode dynamics of a 20-micron-diameter vertical-cavity surface-emitting laser (VCSEL) undergoing gain switching by deep current modulation is studied numerically. The direct current (dc) level is set slightly below threshold and is modulated by a large alternating current (ac). The resulting optical pulse train and transverse-mode patterns are obtained numerically. The ac frequency is varied from 2.5 GHz to 10 GHz, and the ac amplitude is varied from one-half to four times that of the dc level. At high modulation frequencies, a regular pulse train is not generated unless the ac amplitude is large enough. At all modulation frequencies, the transverse spatial profile switches from single-mode to multiple-mode pattern as the ac pumping level is increased. Optical pulse widths vary in the range 5-30 ps. with the pulse width decreasing when either the frequency is increased or the ac amplitude is decreased. The numerical modeling uses an approximation form of the semiconductor Maxwell-Bloch equations. Temporal evolution of the spatial profiles of the laser (and of carrier density) is determined without any assumptions about the type or number of modes. Keywords: VCSELs, current modulation, gain switching, transverse mode dynamics, computational modeling

Goorjian, Peter M.↗

Environmental testing of a Q-switched Nd:YLF laser and a Nd:YAG ring laser

A Q-switched Nd:YLF laser (model 110-02) and a Nd:YAG ring laser (model 120-04) from Lightwave Electronics were subjected to thermal and vibration tests similar to what can be expected during launch and flight on a spacecraft. Even though these lasers were not designed for space flight, environmental tests were performed to identify major design weaknesses. Laser performance (output power, energy, pulsewidth, lasing threshold etc.) were measured prior to and after thermal vibration tests. Average output power of the Q-switched laser degraded 15-20 percent after thermal tests and an additional 20-25 percent after vibration tests. Post diagnostic tests revealed that degradation of the Q-switched laser was due to misalignment of pump focusing optics and the laser cavity.

Robinson, D. L.↗

Revisiting the three-kaon interaction and its relation with 𝐾⁡(1460)

Here, we test the hypothesis of 𝐾⁡(1460) being a hadronic 𝐽 𝑃 = 0 − molecule through nonperturbative 𝑆-wave $KK\bar{⁢K}$, 𝐾⁢𝜋⁢𝜋, 𝐾⁢𝜋⁢𝜂 coupled-channel dynamics in a three-body unitary isobar approach. The scalar two-body coupled-channel resonances 𝑓 0 ⁡(500), 𝑓 0 ⁡(980), 𝑎 0 ⁡(980), and 𝐾$^*_0$⁡(700) are generated in the subsytems in amplitudes that match phase shifts from experiment. In a first step, previous results in the limit of mass-degenerate, stable 𝑓 0 and 𝑎 0 isobars are reproduced. Once the full seven-coupled channel model is switched on, other 𝑆-matrix effects obscure and modify the resonance signal, including complex thresholds, a two-body cusp, and a triangle singularity at threshold.

Döring, M. [George Washington Univ., Washington, D↗