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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

Free Energy Dependencies for Interfacial Electron Transfer from Tin-Doped Indium Oxide (ITO) to Molecular Photoredox Catalysts

John B. Goodenough proposed that interfacial electron transfer kinetics from main group metal oxides should be fundamentally different from that of transition metal oxides, an expectation that has not been widely tested. Herein, the kinetics for interfacial electron transfer from mesoporous transparent conductive oxide Tin-doped Indium Oxide (ITO) to four photoredox catalysts (PCs) were characterized in acetonitrile electrolytes. The photocatalysts had the form: [Ru(4,4ʹ-R 2 -2,2′-bipyridine) 2 (4,4ʹ-(PO 3 H 2 ) 2 -2,2′-bipyridine)] 2+ , where R was H, methoxy, tert -butyl, and Br. The impact of the surface binding group was characterized with [Ru(2,2′-bipyridine) 2 (4,4ʹ-(CO 2 H) 2 -bpy)] 2+ . The interfacial electron transfer reaction ITO(e − )∣PC + → ITO∣PC was quantified by nanosecond absorption spectroscopy as a function of the applied potential (and hence ‒Δ G °). Specific conditions of applied potential were identified where the kinetics were sensitive to the incident irradiance. A layer-by-layer method was used to insert ionic methylene bridge(s) between the PC and the oxide surface. Marcus-Gerischer analysis of the kinetic data indicates non-adiabatic interfacial electron transfer with total reorganization energies that increase when bridges were placed between the photocatalyst and the ITO surface.

Bangle, Rachel E.↗

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer (140) comprising a first sputter-deposited transparent conducting oxide; an electron transport layer (130) interfacing with the first contact layer; a second contact layer (110) comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer (120) having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗

Polyimides from a methylene-bridged dianhydride

High-molecular weight, high-temperature, highly optically transparent films suitable for electronic and aerospace applications were prepared based on a novel methylene-bridged dianhydride 3,3-prime bis(3,4-dicarboxyphenoxy) diphenylmethane dianhydride (PDMDA). All films had lower dielectric constants and significantly higher optical transparency than the commercial Kapton H film, with air-cured films having slightly higher dielectric constants and lower optical transparency than vacuum films, due to oxidative cross-linking.

Boston, Harold G.↗

Direct Visualization of Laser-Induced Coalescence and Alloying of Au into Ag Nanowires

Noble metal nanocomposites with controlled morphology and composition have been largely useful in a wide variety of applications like catalysis, plasmonics, and biological applications. Herein, we show pulsed-laser-assisted fabrication of beaded Au-Ag nanowires with a variety of morphologies and compositions via coalescence and alloying of Au nanoparticles (NP) into a Ag nanowire (NW). Direct visualization of the evolution process with in situ laser heating transmission electron microscopy (ILH-TEM) leads to unambiguous insights into the mechanism of formation for the first time. Ag, being a soft material, melts at the surface to bridge the gap between the NP-NW, forming a cup-like morphology underneath the Au NP via capillary action. Progressive laser irradiation leads to wetting of the Au NP with Ag, forming an envelope around the NP. This is associated with the formation of a valley in Ag NW around the NP, which flattens gradually by partial embedding of the NP. Interdiffusion of Au into Ag and vice versa sets in at this stage, leading to the depletion of Au from the Au-rich NP region. Prolonged irradiation leads to gradual intermixing of Au-Ag forming beaded Au-doped Ag nanowires with homogeneous composition. Such a step-by-step understanding of the coalescence and alloying process has implications in nanowelding, which holds the future in designing efficient transparent conductors and printed electronics.

Isik, Tugba↗

An affordable platform for automated synthesis and electrochemical characterization

In recent years, self-driving laboratories (SDLs) have emerged as a powerful tool to expedite various areas of chemical research. For optimal functionality, these laboratories must be adaptable, readily modifying configurations to meet researchers' specific needs. Despite these advances, much of chemistry still depends on proprietary equipment from specialized vendors, which can be restrictive and difficult to customize for diverse lab setups. Moreover, ensuring reproducibility requires full disclosure of equipment details. In this work, we introduce an automated system featuring a cost-effective, self-designed potentiostat and a straightforward synthesis platform. We provide complete transparency by disclosing the electronic schematics of the potentiostat and the software used in the system. Our aim is to reduce the barriers to entry for SDLs and promote the principles of open science.

Pablo-García, Sergio↗

Characterization of laser-accelerated proton beams from a 0.5 kJ sub-picosecond laser for radiography applications

Laser-accelerated ion beams show promise for many applications, including high-resolution flash imaging of static or dynamic objects in next-generation radiography to probe materials and plasmas in extreme environments and inertial confinement fusion. To scale up ion beam production for radiography applications, we conducted experiments using sub-picosecond lasers up to 0.5 kJ at the OMEGA-EP facility to characterize proton beams from solid targets, primarily CH/CD sub-micron thin films from which ion beams were also used for static and dynamic radiography for the first time. For standalone sub-micron thin CH films, the highest detected proton energy is in the range of 72–97 MeV. Proton beams with highest energy near or above 60 MeV at full laser energy and similar beam profiles are also measured from low-density CD foams and flat CH foil target of micrometer-scale thickness. The ~ 700–800 nm CH/CD foils achieve the highest ion yield among the targets tested. For sub-micron thin films, the laser prepulse can expand the target and lead to complex interactions, which is simulated using coupled hydrodynamic and two-step kinetic models. Simulations suggest the presence of a micrometer-scale preplasma plateau with near-critical density and further indicate that target normal sheath acceleration, electron heating from Relativistic transparency in the preplasma plateau, and background proton reflection from carbon ion front at the rear side contribute to the resulting proton spectrum from these sub-micron thin targets at various stages. These proton beams show strong potential for radiography and for production of secondary sources.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Polarization Selectivity of Aloof-Beam Electron Energy-Loss Spectroscopy in One-Dimensional ZnO Nanorods

Orientation-dependent electronic properties of wurtzite zinc oxide nanorods are characterized by aloof-beam electron energy-loss spectroscopy (EELS) carried out in a scanning transmission electron microscope (STEM). The two key crystal orientation differentiating transitions specific to the in-plane (13.0 eV) and out-of-plane (11.2 eV) directions with respect to the wurtzite structure are examined by first-principles density-functional theory calculations. We note some degree of orientation dependence at the onset of direct band gap transition near 3.4 eV. We demonstrate that good polarization selectivity can be achieved by placing the electron probe at different locations around the specimen with increasing impact parameter while keeping the beam-specimen orientation fixed. The observed results are qualitatively elucidated in terms of the perpendicular electric fields generated by the fast electron (60 kV) used in the microscope. The fact that good polarization selectivity can be achieved by aloof-beam EELS without the requirement of sample reorientation is an attractive aspect from the characterization method point of view in the STEM-EELS community.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

First-Principles Understanding of Optical Excitations within Low-Dimensional Materials

The objective of this project is to utilize first-principles computational approaches to understand optical excitations within two-dimensional monolayers and heterostructures, with the ultimate goal of designing new materials by modifying the chemical and physical structure on the nanoscale. In 2D heterostructures, the nature and movement of the exciton is determined to a large extent by the electron-electron and electron-phonon strengths within individual monolayers, as well as the coupling between layers, all of which in turn depend on chemistry, solid-state screening properties, and quantum confinement. Controlling the nature and migration properties of excitons requires an understanding of the complex relationship between electrons, phonons, defects, disorder, and dynamics. The aim of this project is to determine, by analysis of highly accurate density functional theory (DFT) and many-body perturbation theory (MBPT) calculations, how these complexities can be decomposed into simple, tunable parameters. The specific goals of this project are to 1) understand electron conductivity, absorption and transparency of monolayer semiconductors and metals; 2) develop a theory of excitons near defects in low dimensions; and 3) understand the influence of inter-layer interactions in heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Open-Air Manufacturing of Efficient Large-Area Perovskite Solar Cells to Meet Stability and Cost Targets

This SETO-funded project (DE-EE0009516) developed a fully open-air manufacturing pathway for perovskite solar cells and modules, eliminating vacuum-based processing steps while improving device stability. Open-air ultrasonic spray deposition, solution combustion synthesis, rapid thermal processing, and atmospheric plasma curing were developed and optimized for all functional device layers — perovskite absorber, hole transport layers (HTLs), electron transport layers (ETLs), transparent conducting oxides (TCOs), and rear electrodes — without reliance on vacuum. Sprayed organic ETLs preserved perovskite crystal structure and enabled power conversion efficiencies exceeding 20%, and open-air processed TCOs and rear electrodes achieved optoelectronic performance comparable to sputtered alternatives at substantially lower manufacturing cost. Device stability was assessed through accelerated aging protocols aligned with IEC and ISOS standards, combined with high-throughput optical diagnostics that identified key degradation mechanisms and antagonistic interactions among heat, humidity, and illumination stressors. A comprehensive technoeconomic analysis quantified the cost and throughput advantages of open-air manufacturing over conventional vacuum-based processes, identifying vacuum deposition as the dominant cost driver and demonstrating a clear pathway toward the $0.02/kWh target. The project produced five peer-reviewed journal publications, eleven conference presentations, two patents/applications, and five Ph.D. dissertations.

14 SOLAR ENERGY↗

Polyimides Made From 3,5-Diaminobenzotrifluoride

Polyimides synthesized from 3,5-diaminobenzotrifluoride (DABTF). One monomer of major importance in preparing these high-temperature polymers is 1,3-phenylenediamine (mPDA). Fluorinated polyimides exhibit characteristics potentially attractive for aerospace and electronic applications. Includes optical transparency, solubility in common polar solvents, enhanced thermo-oxidative stability, low dielectric constants, and high glass-transition temperatures. Polyimides also used to form free-standing films, coatings, and moldings.

St. Clair, Terry L.↗

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Hepp, Aloysius F.↗

Measurements of the UV and VUV transmission of optical materials during high energy electron irradiation

An experimental program was conducted in which the optical transmission of several transparent materials was measured during high energy electron irradiation. These experiments were conducted using the Dynamitron electron accelerator as a continuous source of 1.5 MeV electrons and the LINAC electron accelerator as a pulsed source of 5-7 MeV electrons. The experimental program consisted of three major portions. The first portion, the optical transmission of fused silica, BeO, MgF2, and LiF was measured at vacuum ultraviolet wavelengths in the range 1550-2000 A during ambient temperature, 1.5 MeV electron irradiation at ionizing dose rates to 0.5 Mrad/sec. In the second portion of the program, the optical transmission of fused silica and BeO was measured in the range 2000-3000 A during high dose rate, elevated temperature 1.5 MeV electron irradiation. In particular, accurate measurements of the optical transmission were made at ionizing dose rates as high as 10 Mrad/sec. In the final portion of the program, the optical transmission of fused silica and BeO was measured in the wavelength range 2000-3000 A during pulsed 5 and 7 MeV electron irradiation from the LINAC accelerator. The maximum time averaged ionizing dose rate was limited to 0.75 Mrad/sec due to accelerator limitations.

Palma, G. E.↗

A comprehensive study on three typical photoacid generators using photoelectron spectroscopy and ab initio calculations

Conducting a comprehensive molecular-level evaluation of a photoacid generator (PAG) and its subsequent impact on lithography performance can facilitate the rational design of a promising 193 nm photoresist tailored to specific requirements. In this study, we integrated spectroscopy and computational techniques to meticulously investigate the pivotal factors of three prototypical PAG anions, p-toluenesulfonate (pTS - ), 2-(trifluoromethyl)benzene-1-sulfonate (TFMBS - ), and triflate (TF - ), in the lithography process. Our findings reveal a significant redshift in the absorption spectra caused by specific PAG anions, attributed to their involvement in electronic transition processes, thereby enhancing the transparency of the standard PAG cation, triphenylsulfonium (TPS + ), particularly at ~193 nm. Furthermore, the electronic stability of PAG anions can be enhanced by solvent effects with varying degrees of strength. Here we observed the lowest vertical detachment energy of 6.6 eV of pTS - in PGMEA solution based on the polarizable continuum model, which prevents anion loss at 193 nm lithography. In addition, our findings indicate gas-phase proton affinity values of 316.4 kcal/mol for pTS - , 308.1 kcal/mol for TFMBS - , and 303.2 kcal/mol for TF - , which suggest the increasing acidity strength, yet even the weakest acid pTS - is still stronger than strong acid HBr. The photolysis of TPS + -based PAG, TPS + ·pTS - , generated an excited state leading to homolysis bond cleavage with the lowest reaction energy of 83 kcal/mol. Overall, the PAG anion pTS - displayed moderate acidity, possessed the lowest photolysis reaction energy, and demonstrated an appropriate redshift. These properties collectively render it a promising candidate for an effective acid producer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The Influence of Surface Coatings on Exo-Electron Emission During Fatigue

A survey of exo-electron emission literature has shown that the mechanism of exo-emission phenomena has yet to be ascertained. Also, there is probably no unique mechanism that will apply to all the exo-emission observations reported. For exo-emission to occur, trapping centers must first be formed to store electrons. Once such centers are formed, they can be made to give up their trapped electrons by the stimulation of light or oxygen. Future investigations will employ light-transparent films for collecting exo-electrons. Also, a carefully controlled experiment is necessary to detect the emission of exo-electrons from the surface of fatiguing metals. Investigations will include high-vacuum fatigue tests, autoradiography, and solid state collector experiments, and will provide a basis for future research on semiconductor layer collection.

COATING↗

Analysis of the ionosphere-plasmasphere transport of superthermal electrons. I - Transport in the plasmasphere

Analytical solutions are developed for the kinetic equation which describes the transport of superthermal electrons in the terrestrial plasmasphere, together with a relationship which makes it possible to calculate the transparency of the plasmasphere to these electrons. In addition, analytic expressions are presented for the heating rate of the thermal plasma due to the passage of these superthermal electrons through the plasmasphere.

Khazanov, George V.↗

On the Equilibrium Electrostatic Potential and Light-Induced Charge Redistribution in Halide Perovskite Structures

Lead halide perovskites are semiconductor materials which are employed as nonintentionally doped absorbers inserted between two selective carrier transport layers (SCTL), realizing a p-i-n or n-i-p heterojunction. In our study, we have developed and investigated a lateral device, based on methylammonium lead iodide (MAPbI3) in which the p-i-n heterojunction develops in the horizontal direction. Our research suggests that the effective doping level in the MAPbI3 film should be very low, below 1012 cm-3. Along the vertical direction, this doping level is not enough to screen the electric field of the buried heterojunction with the SCTL. The perovskite work function is therefore affected by the work function of the SCTL underneath. From drift-diffusion simulations, we show that intrinsic perovskite-SCTL structures develop mV range surface photovoltages (SPVs) under continuous illumination. However, perovskite-SCTL structures can develop SPVs of hundreds of mV, as confirmed by our measurements. We therefore analyzed the compatibility between low doping and low defect densities in the perovskite layer and such high SPV values using numerical modeling. It is shown that these high SPV values could originate from electronic processes due to large band offsets in the buried perovskite-SCTL heterojunctions, or at the SCTL-transparent conductive oxide (TCO) buried heterojunction. However, such electronic processes can hardly explain the long SPV persistence after switching off the illumination.

defects↗