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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Direct-Current Unbalance Detector

Short circuits to ground indicated by voltage changes. Current transducer connected in bridge circuit with floating 30-Vdc power supply measures voltage unbalance between positive and negative powerlines and ground. Detection circuit output swings higher or lower than normal balanced condition voltage to signify unbalance toward positive or negative side respectively. Circuit configuration adaptable to monitor 4- to 20-mA current loops often found in industrial controls.

Wagner, A. P.↗
NASA NTRS1993

Programmable Multiple-Ramped-Voltage Power Supply

Ramp waveforms range up to 2,000 V. Laboratory high-voltage power-supply system puts out variety of stable voltages programmed to remain fixed with respect to ground or float with respect to ramp waveform. Measures voltages it produces with high resolution; automatically calibrates, zeroes, and configures itself; and produces variety of input/output signals for use with other instruments. Developed for use with ultraviolet spectrometer. Also applicable to control of electron guns in general and to operation of such diverse equipment used in measuring scattering cross sections of subatomic particles and in industrial electron-beam welders.

Ajello, Joseph M.↗
NASA NTRS1986

Minority-carrier mobility anomalies in low-resistivity silicon solar cells

Measurement of the minority-carrier mobility in the base region of a high-voltage metal-insulator-N-P solar cell (Green et al., 1984), as well as in other 0.1-ohm cm cells, provides direct proof that the high voltages measured for that cell are due not only to improved emitter characteristics but to an improved base region as well. The base characteristics are shown to be quite sensitive to the effects of diffusion-induced lattice stress originating in the emitter. The implications of these findings for the fabrication of high-efficiency cells are discussed.

Weizer, V. G.↗
NASA NTRS1975

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS1992

MPD thruster technology

The topics are presented in viewgraph form and include the following: in house program elements; performance measurements; applied-field magnetoplasmadynamic (MPD) thruster performance scaling; MPD thruster technology; thermal efficiency scaling; anode fall voltage measurements; anode power deposition studies; MPD thruster plasma modeling; MPD thruster lifetime studies; and MPD thruster performance studies.

Myers, Roger M.↗
NASA NTRS1976

Flux-flow voltages during guided flux collapse from hollow superconducting cylinders

Voltages across diametrically opposite contact pairs on the outer surface of superconducting Nb tubes are found to depend dramatically upon the spatial configuration of the voltage-measuring leads relative to the positions of the moving magnetic flux lines. Experiments have been conducted to study these voltages for different wall thicknesses and for a variety of arrangements of the leads when flux in the hole and the wall of the Nb tube is made to exit or enter, completely or partially, by applying heat at a narrow strip along its length. Using the critical-state concept, a model for the change of flux and the resulting electric fields in the Nb tube on application of a heat pulse is presented. The resulting time-dependent and time-integrated voltages are calculated in excellent quantitative agreement with the experimental results. These results show that the flux-flow voltages across two contact points on a superconductor arise from the generation of an induced electric field over a chosen path in the superconductor between the contact points and from a change of magnetic flux through the surface bounded by the measuring leads and the chosen path in the superconductor.

Khanna, S. M.↗
DOE OSTI2023

An Ultra-Fast Inrush-Current-Free Startup Method for Grid-tie Inverter without Voltage Sensors

This paper proposes an ultra-fast inrush-currentfree startup method for grid-tie inverters without voltage sensors and phase-locked loop (PLL). Traditionally, the grid-tie inverter needs the voltage measured from points of common couplings (PCC) to generate the phase angle via PLL for inverter pulsewidth- modulation (PWM) signals. The startup procedure is slow and inrush current occurs if the initial PWM does not match the unknown grid voltage well. This paper proposes a startup method that only uses measured inverter ac currents to generate the initial PWM by controlling the current to zero. The generated PWM pattern can be used to reproduce the real grid voltage regardless of the grid impedance. The zero-crossing points of the grid voltage are detected and then used for grid synchronization. The proposed startup procedure only needs a few cycles (16.67 ms/cycle) to reliably synchronize the inverter to the grid without any inrush current. Simulation and experimental results are presented to verify the effectiveness of this control strategy.

He, Yuchen↗
DOE OSTI2024

Nanosecond Transient Validation of Surge Arrester Models to Predict Electromagnetic Pulse Response

The impact of high-altitude electromagnetic pulse events on the electric grid is not fully understood, and validated modeling of mitigations, such as lightning surge arresters (LSAs) is necessary to predict the propagation of very fast transients on the grid. Experimental validation of high frequency models for surge arresters is an active area of research. Further, this article serves to experimentally validate a previously defined ZnO LSA model using four metal-oxide varistor pucks and nanosecond scale pulses to measure voltage and current responses. The SPICE circuit models of the pucks showed good predictability when compared to the measured arrester response when accounting for a testbed inductance of approximately 100 nH. Additionally, the comparatively high capacitance of low-profile arresters show a favorable response to high-speed transients that indicates the potential for effective electromagnetic pulse mitigation with future materials design.

42 ENGINEERING↗
NASA NTRS1996

Interpolation Errors in Spectrum Analyzers

To obtain the proper measurement amplitude with a spectrum analyzer, the correct frequency-dependent transducer factor must be added to the voltage measured by the transducer. This report examines how entering transducer factors into a spectrum analyzer can cause significant errors in field amplitude due to the misunderstanding of the analyzer's interpolation methods. It also discusses how to reduce these errors to obtain a more accurate field amplitude reading.

Martin, J. L.↗
NASA NTRS1975

Pulsed electromagnetic gas acceleration

Terminal voltage measurements with long cathodes in a high power, quasi-steady MPD discharge show that the critical current for the onset of voltage fluctuations, which was previously shown to be a function of cathode area, approaches an asymptote for cathodes of very large surface area. Floating potential measurements and photographs of the discharge luminosity indicate that the fluctuations are confined to the vicinity of the cathode and hence reflect a cathode emission process rather than a fundamental limit on MPD performance. Photoelectric measurements of particular argon neutral and ion transitions show that the higher electronic states are populated more heavily than would be calculated on the basis of Saha-Boltzmann equilibrium at the local electron temperature and number density. Preliminary optical depth measurements show that for a current of 4 kA and an argon mass flow of 12 g/sec, a population inversion exists between the upper and lower states of the 4880 A argon ion transition.

Jahn, R. G.↗
DOE OSTI2026

Breakdown and Discharge Characteristics of High Repetition Frequency Nanosecond Pulsed Air Dielectric Barrier Discharge

This study explores the breakdown characteristics and discharge modes in a parallel plate air dielectric barrier discharge system using repetitive nanosecond pulses, with pulse repetition frequencies (PRFs) from 0.1 to 100 kHz. It examines how pulse parameters—PRF, pulse number and gas pressure—affect the memory effect, leveraging current and voltage measurements, fast imaging and optical emission spectroscopy. The findings show that higher PRFs lead to a reduction in breakdown voltage well below the streamer breakdown threshold. We argue that this effect may be attributed to the cumulative buildup of metastable species and negative ions in the discharge gap which could sustain free electrons in‐between the voltage pulses. Despite observing increased energy deposition with higher PRFs, the impact on filament formation was minimal, highlighting a strong dependence of discharge morphology on the accumulation of plasma‐produced species. This research studies provides valuable insights for controlling discharge regimes in applications such as plasma‐assisted combustion, surface treatment and air treatment by clarifying the interactions between discharge mechanisms at different PRFs and pressures.

42 ENGINEERING↗
NASA NTRS1975

Pulsed electromagnetic gas acceleration

Terminal voltage measurements with various cathodes and anodes in a high power, quasi-steady magnetoplasmadynamic (MPD) are discussed. The magnitude of the current at the onset of voltage fluctuations is shown to be an increasing function of cathode area and a weaker decreasing function of anode area. Tests with a fluted cathode indicated that the fluctuations originate in the plasma adjacent to the cathode rather than at the cathode surface. Measurements of radiative output from an optical cavity aligned to examine the current-carrying portion of a two-dimensional, 56 kA magnetoplasmadynamic discharge reveal no lasing in that region, consistent with calculations of electron excitation and resonance radiation trapping. A voltage-swept double probe technique allows single-shot determination of electron temperature and electron number density in the recombining MPD exhaust flow. Current distributions within the cavity of MPD hollow cathodes for various static prefills with no injected mass flow are examined.

Jahn, R. G.↗
DOE OSTI2023

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation.

Physics↗
DOE OSTI2020

Current Observer Based Predictive Decoupled Power Control Grid-Interactive Inverter

This paper presents a sensor-less current model predictive control (MPC) scheme via a full state observer based current estimator. The grid interactive inverters’ control schemes require current and voltage sensors. Elimination of current sensor enhances the inverter reliability. This paper leverages the inherent characteristics of MPC towards robust current sensor-less grid interactive inverter with LC filter. The observer for inductor current is developed based on the existing capacitor voltage measurement. The estimator dynamic state-space matrices are then obtained through reconstruction of the inverter model with the capacitor voltage and inductor current being the state variables. The controller objectives are to regulate active and reactive power in a decoupled manner. The theoretical expectation, controller performance, and accuracy of the current estimation are verified by conducting a real-time simulation via Typhoon HIL.

Zhang, Zhen↗
NASA NTRS2015

Measuring Seebeck Coefficient

A high temperature Seebeck coefficient measurement apparatus and method with various features to minimize typical sources of errors is described. Common sources of temperature and voltage measurement errors which may impact accurate measurement are identified and reduced. Applying the identified principles, a high temperature Seebeck measurement apparatus and method employing a uniaxial, four-point geometry is described to operate from room temperature up to 1300K. These techniques for non-destructive Seebeck coefficient measurements are simple to operate, and are suitable for bulk samples with a broad range of physical types and shapes.

Snyder, G. Jeffrey↗
NASA NTRS1988

Double-probe potential measurements near the Spacelab 2 electron beam

As part of the Spacelab 2 mission the plasma diagnostics package (PDP) was released from the shuttle as a free-flying satellite. The PDP carried a quasi-static electric field instrument which made differential voltage measurements between two floating probes. At various times during the free flight, an electron beam was ejected from the shuttle. Large differential voltages between the double probes were recorded in association with the electron beam. However, analysis indicates that these large signals are probably not caused by ambient electric fields. Instead, they can be explained by considering three effects: shadowing of the probes from streaming electrons by the PDP chassis, crossing of the PDP wake by the probes, and spatial gradients in the fluxes of energetic electrons reaching the probes. Plasma measurements on the PDP show that energetic electrons exist in a region 20 m wide and up to at least 170 m downstream from the electron beam. At 80 or more meters downstream from the beam, the double probe measurements show that the energetic electron flux is opposite to the injection direction, as would be expected for a secondary returning electron beam produced by scattering of the primary electron beam.

Steinberg, J. T.↗
NASA NTRS1985

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

Buehler, M. G.↗