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Results for “wide bandgap”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Liquid-Cooled Heat Sink Optimization for Thermal Imbalance Mitigation in Wide-Bandgap Power Modules

Power semiconductor die layout in substrates used in power modules is generally optimized for minimum electrical parasitics (e.g., stray inductance) by considering the minimum spacing between dies for thermal decoupling. The layout assumes sufficient heat spreading and transfer from dies to the cooling structure. For module designs using a direct substrate cooling method, the base plate is removed, leading to a steady-state thermal asymmetry in the power module due to insufficient heat spreading/transfer. This causes significant temperature differences among the devices. Such unintentional thermal asymmetries can lead to undesirable asymmetries in power conversion among semiconductor devices, which impact reliability. This article proposes a thermal imbalance mitigation method that uses evolutionary optimized liquid-cooled heat sinks to improve the thermal loading among devices.

Sahu, Raj↗
DOE OSTI2024

Thermal Management of Wide-Bandgap Semiconductor Amplifiers Used for Plasma Heating and Control

Princeton Fusion Systems (PFS) has designed, built, and tested a Load Switch printed circuit board (PCB) to demonstrate the capabilities of 2 kV silicon carbide (SiC) cascodes in development by Qorvo towards plasma heating and control applications. Initial tests have been conducted at low power (~100 W) for validation with thermal finite element analysis (FEA) modeling performed by the National Renewable Energy Laboratory (NREL). Comparisons of experimental data with the thermal modeling results, along with considerations for operating in plasma systems, will be discussed.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗