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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 10{sup 2} and the leakage current of about 10{sup −4} A/cm{sup 2} at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ∼2 nm thick SiN{sub x} layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 10{sup 15 }cm{sup −3}. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiN{sub x} interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Extension of the general thermal field equation for nanosized emitters

During the previous decade, Jensen et al. developed a general analytical model that successfully describes electron emission from metals both in the field and thermionic regimes, as well as in the transition region. In that development, the standard image corrected triangular potential barrier was used. This barrier model is valid only for planar surfaces and therefore cannot be used in general for modern nanometric emitters. In a recent publication, the authors showed that the standard Fowler-Nordheim theory can be generalized for highly curved emitters if a quadratic term is included to the potential model. In this paper, we extend this generalization for high temperatures and include both the thermal and intermediate regimes. This is achieved by applying the general method developed by Jensen to the quadratic barrier model of our previous publication. We obtain results that are in good agreement with fully numerical calculations for radii R > 4 nm, while our calculated current density differs by a factor up to 27 from the one predicted by the Jensen's standard General-Thermal-Field (GTF) equation. Our extended GTF equation has application to modern sharp electron sources, beam simulation models, and vacuum breakdown theory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electronic conductance model in constricted MoS{sub 2} with nanopores

We describe a self-consistent model for electronic transport in a molybdenum di-sulphide (MoS{sub 2}) layer containing a nanopore in a constricted geometry. Our approach is based on a semi-classical thermionic Poisson-Boltzmann technique using a two-valley model within the effective mass approximation to investigate perturbations caused by the nanopore on the electronic current. In particular, we show that the effect of the nanopore on the conductance is reduced as the nanopore is moved from the center to the layer edges. Our model is applied to the detection of DNA translocating through the nanopore, which reveals current features similar to those as predicted in nanopore graphene layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures

A detailed study of the small-signal response of III-Nitride quantum well (QW) light-emitting diodes is presented, in which the electrical and optical responses are simultaneously measured. A complete transport-recombination model is introduced to account for measurements. This allows for a proper evaluation of the recombination lifetime and for the accurate quantification of thermionic carrier escape from the QW. Further, a yet-unreported carrier capture mechanism is identified and quantified; it increases with the carrier density in the QW and bears the signature of a Coulomb in-scattering process.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Investigation of the short argon arc with hot anode. I. Numerical simulations of non-equilibrium effects in the near-electrode regions

The atmospheric pressure arcs have recently found application in the production of nanoparticles. The distinguishing features of such arcs are small length and hot ablating anode characterized by intensive electron emission and radiation from its surface. We performed a one-dimensional modeling of argon arc, which shows that near-electrode effects of thermal and ionization non-equilibrium play an important role in the operation of a short arc, because the non-equilibrium regions are up to several millimeters long and are comparable to the arc length. The near-anode region is typically longer than the near-cathode region and its length depends more strongly on the current density. The model was extensively verified and validated against previous simulation results and experimental data. The Volt-Ampere characteristic (VAC) of the near-anode region depends on the anode cooling mechanism. The anode voltage is negative. In the case of strong anode cooling (water-cooled anode) when the anode is cold, temperature and plasma density gradients increase with current density, resulting in a decrease of the anode voltage (the absolute value increases). Falling VAC of the near-anode region suggests the arc constriction near the anode. Without anode cooling, the anode temperature increases significantly with the current density, leading to a drastic increase in the thermionic emission current from the anode. Correspondingly, the anode voltage increases to suppress the emission, and the opposite trend in the VAC is observed. Here, the results of simulations were found to be independent of sheath model used: collisional (fluid) or collisionless model gave the same plasma profiles for both near-anode and near-cathode regions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Electron reflection effects on particle and heat fluxes to positively charged dust subject to strong electron emission

A new model describing dust charging and heating in unmagnetized plasmas in the presence of large electron emission currents is presented. By accounting for the formation of a potential well due to trapped emitted electrons when the dust is positively charged, this model extends the so-called OML + approach, thus far limited to thermionic emission, by including electron-induced emission processes, and in particular low-energy quasi-elastic electron reflection. Revised semi-analytical formulas for the current and heat fluxes associated with emitted electrons are successfully validated against particle-in-cell simulations and predict an overall reduction of dust heating by up to a factor of 2. Finally, when applied to tungsten dust heating in divertor-like plasmas, the new model predicts that the dust lifetime increases by up to 80%, as compared with standard orbital-motion-limited estimates.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

From thermoelectricity to phonoelectricity

Here in this study, we review the history and progress of solid-state heat harvesting. Efficiency models, material metrics, and current research are discussed for thermoelectrics, thermionics, laser-coolers, and modern technologies. Then, we discuss nonequilibrium optical phonon harvest in the phonovoltaic cell. We make an effort to distinguish between the harvest of equilibrium heat, or thermal-electricity, and the targetted harvest of a particular nonequilibrium phonon mode, or phonoelectricity. We survey the state of phonovoltaic research, focusing on phonovoltaic materials, the electron-phonon coupling, and entropy production in a phonovoltaic cell. Throughout this review, discussions are connected to the electron and phonon structures, interactions, and transport. The modern thermal-electric harvesters are shown to reshape broad-spectrum, high-entropy heat into a narrow-spectrum of low-entropy emissions in order to efficiently generate thermal-electricity. Phonoelectricity, in contrast, intervenes before a low-entropy population of nonequilibrium optical phonons becomes high-entropy heat. In particular, the phonovoltaic cell generates phonoelectricity by utilizing the nonequilibrium, low-entropy, and high temperature optical phonon population produced by, e.g., the relaxation of electrons excited by an electric field. A phonovoltaic material has an ultranarrow electronic bandgap, such that the hot optical phonon population can relax by producing electron-hole pairs (and power) instead of multiple acoustic phonons (and entropy). The phonovoltaic device has an electric diode, e.g., a p-n junction, such that the internal electric field of the diode splits the electrons and holes in order to produce an electric current, and thus, power. The low entropy and high-temperature of the nonequilibrium optical phonon population enable efficient, in-situ heat harvesting. Bilayer graphene, for example, can theoretically convert the nonequilibrium population of optical phonons generated in a field-effect transistor into electricity with an efficiency exceeding 70% of the Carnot limit. The thermal-electric devices, in contrast, are either inefficient or restricted to ex-situ power generation. Lastly, as the phonoelectric Carnot limit is defined by the local nonequilibrium between electron and optical phonon populations, rather than the spatial nonequilibrium across the device, the Carnot limit can be very large without inducing melting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Simulations of divertor plasmas with inverse sheaths

The effect of strong electron emission from material surfaces has been proposed to form an “inverse sheath”: a region with a positive potential relative to the near-wall plasma which prevents the flow of ions to the wall [M. D. Campanell, “Negative plasma potential relative to electronemitting surfaces,” Phys. Rev. E. 88, 033103 (2013); M. D. Campanell and M. V. Umansky, “Strongly emitting surfaces unable to float below plasma potential,” Phys. Rev. Lett. 116, 1–5 (2016); M. D. Campanell and G. R. Johnson, “Thermionic cooling of the target plasma to a sub-ev temperature,” Phys. Rev. Lett. 122, 1–5 (2019)]. We assess the viability of this regime in a tokamak device using the 2D edge plasma transport code UEDGE [T. Rognlien et al ., “A fully implicit, time dependent 2-D fluid code for modeling tokamak edge plasmas,” J. Nucl. Mater. 196–198, 347–351 (1992)]. Since the UEDGE code does not consider the sheath region directly, we apply boundary conditions at the divertor targets which emulate the physics of both “standard” and “inverse” sheath regimes [R. Masline et al ., “Influence of the inverse sheath on divertor plasma performance in tokamak edge plasma simulations,” Contrib. Plasma Phys. 60, e201900097 (2020)]. Using these boundary conditions, we perform scoping studies to assess plasma parameters near the target by varying the density at the core-edge interface. We observe a smooth transition in the resultant profiles of plasma parameters for the standard sheath, and a bifurcation across the simulation set for plasmas with an inverse sheath. The cause of this bifurcation is assessed by performing the parameter scan both with and without impurity radiation; we observe that the bifurcation persists in both cases, indicating that this bifurcation is caused by plasma recombination.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Sudden collapse of a pressure profile generated by off-axis heating in a linear magnetized plasma

Here, the features of an unexpected, large event that arises spontaneously during a basic heat transport experiment are presented. It consists of the sudden collapse of the radial plasma pressure profile, akin to disruption events observed in toroidal magnetic confinement devices. The experiment is performed on the Large Plasma Device at the University of California, Los Angeles (UCLA). It uses a LaB6 thermionic emitter of annular shape to induce off-axis heating of a cold, afterglow plasma, in a linear magnetic geometry. The temporal evolution consists of three regimes. During an early, quiescent period, classical heat transport along and across the magnetic field arises from Coulomb collisions. After significant pressure gradients develop, drift-Alfvén waves become unstable. Upon reaching large amplitude, they trigger avalanche events that flatten the outer part of the heated region, which, in turn, quenches the instability. Due to the sustained heating, the pressure profile rebuilds and the process repeats, leading to a relatively long, second regime that displays multiple avalanches, but suddenly, the annular pressure profile is observed to collapse. After this collapse, the system enters a third regime with large fluctuations. Before the collapse, a rapid, runaway heating environment arises whose time evolution exhibits a self-similar dependence on the applied voltage. The time evolution, morphology, and scaling of the collapse event are presented, and an examination is made of the underlying mechanisms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Wavelength modulation laser-induced fluorescence for plasma characterization

Laser-Induced Fluorescence (LIF) spectroscopy is an essential tool for probing ion and atom velocity distribution functions (VDFs) in complex plasmas. VDFs carry information about the kinetic properties of species that is critical for plasma characterization. Accurate interpretation of these functions is challenging due to factors such as multicomponent distributions, broadening effects, and background emissions. Our research investigates the use of Wavelength Modulation (WM) LIF to enhance the sensitivity of VDF measurements. Unlike standard Amplitude Modulation (AM) methods, WM–LIF measures the derivative of the LIF signal. This approach makes variations in VDF shape more pronounced. VDF measurements with WM–LIF were investigated with both numerical modeling and experimental measurements. The developed model enables the generation of both WM and AM signals, facilitating comparative analysis of fitting outcomes. Experiments were conducted in a weakly collisional argon plasma with magnetized electrons and non-magnetized ions. Measurements of the argon ion VDFs employed a narrow-band tunable diode laser, which scanned the 4p 4 D 7/2 –3d 4 F 9/2 transition centered at 664.553 nm in vacuum. A lock-in amplifier detected the second harmonic WM signal, which was generated by modulating the laser wavelength with an externally controlled piezo-driven mirror of the diode laser. Finally, our findings indicate that the WM–LIF signal is more sensitive to fitting parameters, allowing for better identification of VDF parameters such as the number of distribution components, their temperatures, and velocities. In addition, WM–LIF can serve as an independent method to verify AM measurements and is particularly beneficial in environments with substantial light noise or background emissions, such as those involving thermionic cathodes and reflective surfaces.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Direct mechanistic connection between acoustic signals and melt pool morphology during laser powder bed fusion

Various nondestructive diagnostic techniques have been proposed for in situ process monitoring of laser powder bed fusion (LPBF), including melt pool pyrometry, whole-layer optical imaging, acoustic emission, atomic emission spectroscopy, high speed melt pool imaging, and thermionic emission. Correlations between these in situ monitoring signals and defect formation have been demonstrated with acoustic signals having been shown to predict pore formation with especially high confidence in recent machine learning studies. Here, in this work, time-resolved acoustic data are collected in both the conduction and keyhole welding regimes of LPBF-processed Ti-6Al-4V alloy. A non-dimensionalized Strouhal number analysis, used in whistle aeroacoustics, is applied to demonstrate that the acoustic signals recorded in the keyhole regimes can be directly associated with the vapor depression morphology. This mechanistic understanding developed from whistle aeroacoustics shows that acoustic monitoring during the LPBF process can provide a direct probe into the vapor depression dynamics and defect occurrence, especially in the keyhole regimes relevant to printing and defect formation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm 2 /s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.

Crystallographic defects↗
DOE OSTI2024

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

Current crowding↗
DOE OSTI2020

Surface plasmon enhanced fast electron emission from metallised fibre optic nanotips

Physical mechanisms of electron emission from fibre optic nanotips, namely, tunnelling, multi-photon, and thermionic emission, either prevent fast switching or require intense laser fields. Time-resolved electron emission from nano-sized sources finds applications ranging from material characterisation to fundamental studies of quantum coherence. We present a nano-sized electron source capable of fast-switching (≤1 ns) that can be driven with low-power femtosecond lasers. The physical mechanism that can explain emission at low laser power is surface plasmon enhanced above-threshold photoemission. An electron emission peak is observed and provides support for resonant plasmonic excitation. The electron source is a metal-coated optical fibre tapered into a nano-sized tip. The fibre is flexible and back illuminated facilitating ease of positioning. The source operates with a few nJ per laser pulse, making this a versatile emitter that enables nanometrology, multisource electron-lithography and scanning probe microscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Redesigning the Jefferson Lab Hall A beam line for high precision parity experiments

The Continuous Electron Beam Accelerator Facility (CEBAF) was built with a thermionic electron source and the three original experimental hall lines reflected this. A few years after beam delivery began a parity violation experiment was approved and two polarimeters were installed in the Hall A beam line. The beam raster system was placed after the new Compton polarimeter, before one accelerator quadrupole and four quadrupoles in the new Moller polarimeter. It was very difficult to meet experimental requirements on envelope functions and raster shape with this arrangement so a sixth quadrupole was installed downstream of the Moller polarimeter to provide an additional degree of freedome. All of the parity experiments in Hall A have been run with this still-unsatisfactory configuration. The MOLLER experiment is predicated on achieving a 2% error on a 32 ppb asymmetry. Beam line changes are required to meet the systematic error budget. This work documents the existing beam line, an interim change which can be accomplished during a annual maintenance down, and the final configuration for MOLLER and subsequent experiments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations

The end of Dennard scaling, which facilitated proportional increases in computing power without added energy costs until the mid-2000s, has underscored the urgent need for innovative semiconductor devices that can enhance energy efficiency. Tunnel field-effect transistors (TFETs) have emerged as promising candidates to surpass the energy efficiency of conventional metal oxide semiconductor field-effect transistors (MOSFETs). Unlike MOSFETs, which rely on thermionic emission to overcome the source-channel potential barrier, TFETs operate through quantum tunneling, potentially enabling sub-60 mV dec −1 subthreshold swing (SS) for low-voltage operation. However, lateral TFETs have faced challenges in achieving adequate on-state current (I ON ) and a broad SS operation window, limiting their practical utility. This review article advocates for areal TFETs, which utilize face-to-face tunnel junctions that ideally offer step-function current turn-on characteristics and allow I ON to scale with device area rather than width. We highlight recent advancements in integrating 2D materials into tunneling structures, which could facilitate efficient band-to-band tunneling through atomically thin layers, while addressing challenges of gate field screening. We then discuss the nearer-term prospects of epitaxial areal TFETs comprising III–V compound semiconductors and group-IV semiconductors based on recent experimental progress. The review examines both quantum mechanical and semiclassical modeling approaches for TFETs, including techniques to reduce the computational complexity. The article delves into ongoing challenges in material synthesis, interface engineering, device fabrication, and integration pathways, concluding with recommendations for future research directions to overcome the fundamental power density limitations of conventional transistor technology.

2D materials↗
DOE OSTI2023

Stable Photoemission from the Wehnelt Aperture Surface in 4D Ultrafast Electron Microscopy

Here we show that photoemission with high long-term stability that is immediate and robust can be generated from the surface of the Wehnelt aperture in a TEG-based UEM. Further, we show that the resulting photobeam quality can be at least as good as that from LaB 6 , whether under photo or thermionic operation. We hypothesize that the energy distribution and the temporal properties of the beam are improved relative to LaB 6 owing to the closer match of photon energy to aperture work function.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Topological cathodes: Controlling the space charge limit of electron emission using metamaterials

The space charge limit (SCL) of emission from photocathodes sets an upper limit on the performance of both high- and low-field electron guns. Generally, one is forced to strike a compromise between the space charge limit and the cathode’s intrinsic emittance [I. Bazarov et al., Phys. Rev. Lett. 102, 104801 (2009)]. However, it is possible to nearly eliminate the SCL due to the image charge by engineering the topography of the cathode’s surface. A cathode with a surface plasma frequency below the frequency spectrum of the accelerating electrons will greatly reduce the polarization of the cathode and its image-charge field, thereby mitigating the cathode’s space charge limit for photoelectric, thermionic, and field emission. In the work presented here, a theory for the image-charge field of a disk of charge being accelerated from the cathode surface is developed which includes the frequency-dependent effects of the cathode’s dielectric function. This theory verifies the concept of SCL mitigation with a wire array metamaterial to design a metacathode with greatly reduced image-charge fields. The details of the holistic metacathode design spanning 6 orders of magnitude in scale are described.

47 OTHER INSTRUMENTATION↗