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Results for “surface morphology”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Controlling Growth Orientation of Phthalocyanine Films by Electrical Fields

Organic Phthalocyanine films have many applications ranging from data storage to various non-linear optical devices whose quality is affected by the growth orientation of Phthalocyanine films. Due to the structural and electrical properties of Phthalocyanine molecules, the film growth orientation depends strongly on the substrate surface states. In this presentation, an electrical field up to 4000 V/cm is introduced during film growth. The Phthalocyanine films are synthesized on quartz substrates using thermal evaporation. An intermediate layer is deposited on some substrates for introducing the electrical field. Scanning electron microscopy, x-ray diffraction, and Fourier transform infrared spectroscopy are used for measuring surface morphology, film structure, and optical properties, respectively. The comparison of Phthalocyanine films grown with and without the electrical field reveals different morphology, film density, and growth orientation, which eventually change optical properties of these films. These results suggest that the growth method in the electrical field can be used to synthesized Phthalocyanine films with a preferred crystal orientation as well as propose an interaction mechanism between the substrate surface and the depositing molecules. The details of growth conditions and of the growth model of how the Phthalocyanine molecules grow in the electrical field will be discussed.

Zhu, S.↗
NASA NTRS2016

Defining Long-Duration Traverses of Lunar Volcanic Complexes with LROC NAC Images

A long-duration lunar rover [e.g., 1] would be ideal for investigating large volcanic complexes like the Marius Hills (MH) (approximately 300 x 330 km), where widely spaced sampling points are needed to explore the full geologic and compositional variability of the region. Over these distances, a rover would encounter varied surface morphologies (ranging from impact craters to rugged lava shields), each of which need to be considered during the rover design phase. Previous rovers including Apollo, Lunokhod, and most recently Yutu, successfully employed pre-mission orbital data for planning (at scales significantly coarser than that of the surface assets). LROC was specifically designed to provide mission-planning observations at scales useful for accurate rover traverse planning (crewed and robotic) [2]. After-the-fact analyses of the planning data can help improve predictions of future rover performance [e.g., 3-5].

Stopar, J. D.↗
DOE OSTI2024

Local step-flow dynamics in thin film growth with desorption

Desorption of deposited species plays a role in determining the evolution of surface morphology during crystal growth when the desorption time constant is short compared with the time to diffuse to a defect site, step edge, or kink. However, experiments to directly test the predictions of these effects are lacking. Novel techniques such as in situ coherent x-ray scattering can provide significant new information. Herein we present x-ray photon correlation spectroscopy (XPCS) measurements during diindenoperylene (DIP) vapor deposition on thermally oxidized silicon surfaces. DIP forms a nearly complete two-dimensional first layer over the range of temperatures studied (40–120 ⁢°C), followed by mounded growth during subsequent deposition. Local step flow within mounds was observed, and we find that there was a terrace-length-dependent behavior of the step edge dynamics. This led to unstable growth with rapid roughening (β>0.5) and deviation from a symmetric error-function-like height profile. At high temperatures, the grooves between the mounds tend to close up leading to nearly flat polycrystalline films. In conclusion, numerical analysis based on a (1+1)-dimensional model suggests that terrace-length dependent desorption of deposited ad-molecules is an essential cause of the step dynamics, and it influences the morphology evolution.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Electron irradiation effects on electrical and optical properties of sol-gel prepared ZnO films

The effects of electron beam irradiation on the electrical and the optical properties of zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films, prepared by the sol-gel technique, were investigated. The grain size, surface morphology, sheet resistance, optical constants, absorption edge, and direct and indirect optical band gaps of these films were analyzed before and after exposure to electron beam. The decrease in the structural homogeneity and the crystallinity of the films after exposure to electron irradiation is observed. The irradiation causes increase in the sheet resistance and blueshift in the absorption edge for both ZnO and ZnO:Al films. The change in carrier concentration due to doping as well as the exposure to electron beam are responsible for the modified electrical and optical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2010

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm{sup 2}/V s. The 2DEG density was tunable at 0.4-3.7x10{sup 13}/cm{sup 2} by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111)B GaAs substrates. The InAs epilayer/GaAs substrate combination has been chosen because the lattice-mismatch is severe (approximately 7.2 percent), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites instead of the more common In(x)Ga(1-x)As alloy we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters - susceptor temperature, Thin flux, and AsH3 flux - have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approximately 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer/substrate interface.

Welser, R. E.↗
NASA NTRS1994

Nucleation, Growth, and Strain Relaxation of Lattice-Mismatched III-V Semiconductor Epitaxial Layers

We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111) B GaAs substrates. The InAs epilayer / GaAs substrate combination has been chosen because the lattice-mismatch is severe (approx. 7.20%), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites Instead of the more common In(x)Ga(1-x)As alloy, we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters -- susceptor temperature, TMIn flux, and AsH3 flux -- have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approx. 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer / substrate interface.

Welser, R. E.↗
DOE OSTI2019

An ethyl methyl sulfone co-solvent eliminates macroscopic morphological instabilities of lithium metal anode

Lithium metal anodes suffer from a short cycle life, and the parasitic reactions of lithium with electrolytes are widely observed. Common sense is to avoid such reactions. Here in this paper, we head in the opposite direction by using an oxidizing co-solvent, ethyl methyl sulfone, in the electrolyte, which addresses the ‘dendrite’ issue entirely, resulting in a dense and macroscopically smooth surface morphology of the plated lithium. However, a dendrite-free lithium metal anode does not necessarily exhibit a high coulombic efficiency.

25 ENERGY STORAGE↗
DOE OSTI2019

Thermo-Fluid Modeling of Selective Laser Melting: Single-Track Formation Incorporating Metallic Powder

Selective laser melting (SLM) utilizes a laser source to melt and fuse metallic particles to form dense solid parts. Since molten metals have surface tension gradients, the thermo-capillary effect becomes a driving force of melt flow, which will subsequently determine the molten/solidified track as well as the build surface morphology. In this study, a 3D volume of fluid model has been developed to simulate heat transfer and fluid dynamic during single-track laser scanning. A sequential powder addition algorithm is applied to obtain random powder distribution over a thick substrate. Temperature-dependent thermo-physical properties of Ti-6Al-4V are used to define the material, and a volumetric heat source is included as an approximation to laser irradiation. As a result of continuous melting and solidifying, the thermal behavior, the molten metal flow and the free surface formation can be numerically analyzed. In addition, a two-layer simulation has been carried out to study the interlayer bonding. Simulations results are compared with SLM experiments using the single-track morphology acquired by white-light interferometry. The melt pool widths obtained from simulations are in good agreement with the measured single-track widths. On the other hand, it is observed that single tracks formed in SLM have an elevated bead height, which is not realized numerically.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A Review on Iron Oxide Nanoparticles and Their Biomedical Applications

The iron oxide nanoparticles have a great attraction in biomedical applications due to their non-toxic role in the biological systems. The iron oxide nanoparticles have both magnetic behaviour and semiconductor property which lead to multifunctional biomedical applications. The iron oxide nanoparticles used in biomedical fields such as antibacterial, antifungal and anticancer were reviewed. The uses of hematite (α-Fe{sub 2}O{sub 3}), maghemite (γ-Fe{sub 2}O{sub 3}) and magnetite (Fe{sub 3}O{sub 4}) nanoparticles, for an inhibition time in biological activities, are listed in this work. Also, this review explains the use of iron oxide nanoparticles in the biomedical fields with particular attention to the application of hematite and superparamagnetic iron oxide nanoparticles. In this review, analysis reveals that the role of iron oxide in biological activity is good due to its biocompatibility, biodegradability, ease of synthesis and different magnetic behaviours. The change of properties of iron oxide nanoparticles such as particle size, morphology, surface, agglomeration and electronic properties has specific impact in biomedical application. The review mainly focused in and discussed about antibacterial, anticancer, bone marrow and cell labelling activities. From this review work, the iron oxide nanoparticle may be specialised in particular bacterial and cancer treatments. Also discussed are the iron oxide nanoparticle-specific biomedical applications like human placenta, insulin and retinal locus treatments.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2014

Fluorescence of silicon nanoparticles prepared by nanosecond pulsed laser

A pulsed laser fabrication method is used to prepare fluorescent microstructures on silicon substrates in this paper. A 355 nm nanosecond pulsed laser micromachining system was designed, and the performance was verified and optimized. Fluorescence microscopy was used to analyze the photoluminescence of the microstructures which were formed using the pulsed laser processing technique. Photoluminescence spectra of the microstructure reveal a peak emission around 500 nm, from 370 nm laser irradiation. The light intensity also shows an exponential decay with irradiation time, which is similar to attenuation processes seen in porous silicon. The surface morphology and chemical composition of the microstructure in the fabricated region was also analyzed with multifunction scanning electron microscopy. Spherical particles are produced with diameters around 100 nm. The structure is compared with porous silicon. It is likely that these nanoparticles act as luminescence recombination centers on the silicon surface. The small diameter of the particles modifies the band gap of silicon by quantum confinement effects. Electron-hole pairs recombine and the fluorescence emission shifts into the visible range. The chemical elements of the processed region are also changed during the interaction between laser and silicon. Oxidation and carbonization play an important role in the enhancement of fluorescence emission.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Investigation on Target Erosion and Effect of Deposition Rate on Microstructure and Properties of Sputtered Be Coating

The beryllium coatings were prepared by direct current magnetron sputtering at different powers. The target erosion rate was theoretically predicted on the basis of the conservation of electric charge and mass. The experiment based on weighing method was performed, which verified the theoretical prediction. XRD analysis reveals that the sputter coatings mainly consist of α-Be phase. On increasing deposition rates, the surface morphology shows a transition from a regular equiaxed grain to a cauliflower-like polygrain owing to the irregular arrangement of atoms and bulk diffusion enhancement originating from the sputtering thermal effect. A heterogeneous particulate-induced growth was observed and derived from fallen scrap during the sputtering process. The surface roughness displays a power function with the thickness increment, while the electrical resistivity is reversed with the grain size.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Phase composition of polycrystalline HfNx (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties

We have investigated the phase composition of HfNx as a function of x and the effects of low-energy ion irradiation on the microstructure and physical properties of polycrystalline layers grown on SiO2 at 350 °C by ultrahigh vacuum reactive dc magnetron sputtering of Hf in mixed N2/Ar discharges. X-ray diffraction and Rutherford backscattering spectrometry results show that the phases obtained in polycrystalline HfNx layers with increasing x are hcp-structure α-Hf:N (x ≲ 0.6); multiphase mixtures consisting of α-Hf, NaCl-structure δ-HfN, rhombohedral ɛ-Hf3N2, and/or ζ-Hf4N3 (0.6 ≲ x ≲ 0.9); δ-HfN single phase (0.9 ≲ x ≲ 1.3); and mixtures of δ-HfN and higher nitrides (x ≳ 1.3). HfNx layers with 0.9 ≲ x ≲ 1.2 grown under mild ion irradiation (incident ion energy Ei ≃ 7 eV and ion-to-Hf flux ratios Ji/JHf = 1−3) are underdense with mixed orientation, low in-plane stress, and rough surface morphology due to limited adatom mobilities resulting in kinetic roughening and atomic shadowing during film growth. However, the use of intense ion irradiation (Ei = 25 eV and Ji/JHf = 4−20) results in HfNx layers, which are fully dense with strongly 111-oriented texture, compressive in-plane stress, and smooth surfaces due to ion irradiation enhanced adatom surface mobilities. In addition, the latter films have lower resistivity and higher hardness. For stoichiometric δ-HfN layers, ρ decreases from 69.7 to 35.2 μΩ cm and H increases from 22.1 to 27.4 GPa, with increasing ion-irradiation intensity. However, for HfNx layers with 1.2 ≲ x ≲ 1.6, the correspondingly higher steady state atomic N surface coverages during deposition alter growth kinetics in favor of 001 texture with a fully dense structure and compressive in-plane stress.

Materials Science↗
DOE OSTI2011

Preparation of highly ordered growth of single-crystalline Gd{sub 2}O{sub 2}S:Eu{sup 3+} nanostructures

Graphical abstract: Fabrication of highly ordered single-crystalline Gd{sub 2}O{sub 2}S:Eu{sup 3+} nanostructures over a porous anodized aluminum oxide (AAO) template via hydrothermal method is described. Well aligned non-collapsed Gd{sub 2}O{sub 2}S:Eu{sup 3+} nanostructures are ideal functional components for next generation luminescent devices. Research highlights: {yields} Synthesis of highly ordered Gd{sub 2}O{sub 2}S:Eu{sup 3+} nanotubes, nanorods and nanoflowers. {yields} Using template-assisted (AAO) hydrothermal method. {yields} Well aligned nanostructures for next generation luminescent devices. {yields} Detailed structural, morphology and the phase composition were studied. -- Abstract: A simple and facile template-assisted hydrothermal route has been demonstrated for the shape-selective preparation of highly ordered single-crystalline Gd{sub 2}O{sub 2}S:Eu{sup 3+} nanostructures, such as nanotubes, nanorods and nanoflowers. These fabricated nanostructures possess desirable atomic structures, surfaces, morphologies and properties to meet the growing demands and specific requirements of new technologies. The concentration of precursor chemicals, the temperature, the reaction time, and the use of a capping agent are key factors in the morphological control of Gd{sub 2}O{sub 2}S:Eu{sup 3+} nanostructures. The morphology and the phase composition of the prepared nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy disperse spectroscopy (EDS) and photoluminescence (PL). We believe this technique will be readily adopted in realizing other forms of various nanostructured materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Study on mechanically alloyed tin telluride screen-printed films for optoelectronic device applications

Narrow band gap semiconductor tin telluride (SnTe) was synthesized by mechanical alloying and its film was deposited on glass substrates by the economically and commercially feasible screen-printing technique. Deposition of the film was followed by sintering. Different analytical techniques were utilized to study the structure, surface morphology, elemental, optical and electrical characteristics of the film. X-ray diffraction analysis confirms that the film is polycrystalline in nature and exhibits rock salt type structure with preferred orientation of grains along (200) direction. EDAX spectrum confirms the presence of Sn and Te elements in the film. SEM image shows that the film exhibits uniform surface. The energy band gap of the film was determined by reflection spectra. The film is found to have a direct band gap of 0.37 eV. The dark electrical conductivity and activation energy of the film were measured in temperature range 300–380 K. Hall Effect measurement indicates that the film has p-type electrical conductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Nanocrystalline immobilised ZnO photocatalyst for degradation of benzoic acid and methyl blue dye

Highlights: • ZnO thin films were successfully prepared with the help of chemical spray pyrolysis technique. • Study the effect of thickness variation(solution quantity) onto the various properties of film. • Film prepared at 1.65 μm thickness showsthe maximum photoelectrochemical performance in 0.1 M NaOH electrolyte. • The flat band potential of optimized ZnO thin film is –0.86 V/SCE. • Study degradation result of benzoic acidand methyl blue dye using ZnO photoelectrode under UV light illumination. - Abstract: ZnO thin films were deposited with different solution quantities using spray pyrolysis technique. The effect of thickness variations on photoelectrochemical (PEC), structural, morphological and optical properties are studied. PEC measurements showed maximum photo response about I{sub sc} = 0.485 mA and V{sub oc} = 632 mV at 1.65 μm film thickness. X-ray diffraction study confirms that the films are polycrystalline with hexagonal crystal structure. Hexagonal shaped grains are observed conformed from surface morphology. The estimated bandgap energy of ZnO films are varies between 3.23 to 3.29 eV. Finally large area (10 × 10 cm{sup 2}) deposited ZnO photoelectrode were used to study the photocatalytic and photoelectrocatalytic degradation of benzoic acid (BA) and methyl blue (MB) dye under UV radiation. Photoelectrocatalytic degradation result shows 65.7% degradation of BA and for colorant organic compound such as MB dye is about 98.1% is possible. The mineralization of pollutants are studied by measuring chemical oxygen demand (COD) values.

36 MATERIALS SCIENCE↗
DOE OSTI2018

TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature

The effect of high-temperature annealing on tungsten (W) films deposited on silicon carbide (SiC) with and without a titanium nitride (TiN) diffusion barrier was examined as a function of time. Evolutions in phase composition, surface morphology, and roughness from annealing at 1273 K were investigated for up to 24 h. Without a TiN diffusion barrier, solid state reactions between the W film and SiC substrate led to the formation of W 5 Si 3 , W 2 C, and WC species and the rise of an inhomogeneous surface structure that was initially web-like and later discontinuous. Severe roughening on the order of the initial film thickness was observed. Incorporation of a 100 nm TiN diffusion barrier suppressed the formation of W 5 Si 3 and W 2 C and only trace WC could be detected due to species diffusion through TiN grain boundaries. Changes in the surface structure and roughness were minimal. Our results warrant consideration of TiN as an effective diffusion barrier for W on SiC systems where structural stability at high temperatures is highly desired.

36 MATERIALS SCIENCE↗