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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Towards identifying the mechanisms underlying field-aligned edge-loss of HHFW power on NSTX

Fast-wave heating will be a major heating scheme on ITER, as it can heat ions directly and is relatively unaffected by the large machine size unlike neutral beams. However, fast-wave interactions with the plasma edge can lead to deleterious effects such as, in the case of the high-harmonic fast-wave (HHFW) system on NSTX, large losses of fast-wave power in the scrape off layer (SOL) under certain conditions. In such scenarios, a large fraction of the lost HHFW power is deposited on the upper and lower divertors in bright spiral shapes. The responsible mechanism(s) has not yet been identified but may include fast-wave propagation in the scrape off layer, parametric decay instability, and RF currents driven by the antenna reactive fields. Understanding and mitigating these losses is important not only for improving the heating and current-drive on NSTX-Upgrade but also for understanding fast-wave propagation across the SOL in any fast-wave system. This talk summarizes experimental results demonstrating that the flow of lost HHFW power to the divertor regions largely follows the open SOL magnetic field lines. This lost power flux is relatively large close to both the antenna and the last closed flux surface with a reduced level in between, so the loss mechanism cannot be localized to the antenna. At the same time, significant losses also occur along field lines connected to the inboard edge of the bottom antenna plate. The power lost within the spirals is roughly estimated, showing that these field-aligned losses to the divertor are significant but may not account for the total HHFW loss. To elucidate the role of the onset layer for perpendicular fast-wave propagation with regards to fast-wave propagation in the SOL, a cylindrical cold-plasma model is being developed. This model, in addition to advanced RF codes such as TORIC and AORSA, is aimed at identifying the underlying mechanism(s) behind these SOL losses, to minimize their effects in NSTX-U, and to predict their importance in ITER.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

This work studies the influence of crystallographic alignment onto magnetization reversal in partially epitaxial Co films. A reproducible growth sequence was devised that allows for the continuous tuning of grain orientation disorder in Co films with uniaxial in-plane anisotropy by the controlled partial suppression of epitaxy. While all stable or meta-stable magnetization states occurring during a magnetic field cycle exhibit a uniform magnetization for fully epitaxial samples, non-uniform states appear for samples with sufficiently high grain orientation disorder. Simultaneously with the occurrence of stable domain states during the magnetization reversal, we observe a qualitative change of the applied field angle dependence of the coercive field. Upon increasing the grain orientation disorder, we observe a disappearance of transient domain wall propagation as the dominating reversal process, which is characterized by an increase of the coercive field for applied field angles away from the easy axis for well-ordered epitaxial samples. Upon reaching a certain disorder threshold level, we also find an anomalous magnetization reversal, which is characterized by a non-monotonic behavior of the remanent magnetization and coercive field as a function of the applied field angle in the vicinity of the nominal hard axis. This anomaly is a collective reversal mode that is caused by disorder-induced frustration and it can be qualitatively and even quantitatively explained by means of a two Stoner-Wohlfarth particle model. Its predictions are furthermore corroborated by Kerr microscopy and by Brillouin light scattering measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure

Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7 ± 0.1 eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Growth of vertically aligned α−MoO{sub 3} nanoflakes by using a facile PVD route

In this report, we synthesize vertically aligned molybdenum trioxide (α−MoO{sub 3}) nanoflakes (NFs) with high aspect ratio (height/thickness >15) on the cobalt coated glass substrates by the plasma assisted sublimation process, employing Mo metal strip as a sublimation source. The effect of substrate temperature, nature of substrate as well as the geometry of the sublimation source (Mo-strip) have been investigated on the morphological, structural and optical properties of the grown NFs, keeping plasma parameters as fixed. The surface morphology, crystalline structure and optical properties of MoO{sub 3} NFs have been studied systematically by using scanning electron microscope (SEM), transmission electron microscope (TEM) with selected area electron diffraction (SAED), X-ray diffractometer, and IR- spectroscopy. The experimental observations endorse that the characteristics of MoO{sub 3} NFs are strongly depend on substrate temperature, substrate nature as well as geometry of Mo-strip. All the observed results are well in consonance with each other.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electronic structure evolution and energy level alignment at C{sub 60}/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoO{sub x}/indium tin oxide interfaces

The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C{sub 60})/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoO{sub x})/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoO{sub x}, a dipole of 1.58 eV was formed at the TAPC/MoO{sub x} interface due to electron transfer from TAPC to MoO{sub x}. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoO{sub x} interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C{sub 60} on TAPC, a dipole of 0.27 eV was observed at the C{sub 60}/TAPC heterojunction due to the electron transfer from TAPC to C{sub 60}. This led to a drop of the HOMO of TAPC near the C{sub 60}/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C{sub 60}, similarly creating a built-in field in C{sub 60} film and improving the electron transfer away from the C{sub 60}/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C{sub 60}/TAPC-based organic photovoltaic cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Band alignment and electrical properties of Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} heterojunctions

The band alignment of Al{sub 2}O{sub 3}/n-Ga{sub 2}O{sub 3} was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8 ± 0.2 eV measured for Al{sub 2}O{sub 3}, the conduction and valence band offsets at the interface were estimated to be 1.5 ± 0.2 eV and 0.7 ± 0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Al{sub 2}O{sub 3}/n-Ga{sub 2}O{sub 3} (2{sup ¯}01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al{sub 2}O{sub 3}/Ga{sub 2}O{sub 3} interface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

When a single hole aligns several spins: Double exchange in organic systems

The double exchange is a well-known and technically important phenomenon in solid state physics. Ionizing a system composed of two antiferromagnetically coupled high-spin units, the ground state of which is a singlet state, may actually produce a high-spin ground state. This work illustrates the possible occurrence of such a phenomenon in organic chemistry. The here-considered high-spin units are triangulenes, the ground state of which is a triplet. Bridging two of them through a benzene ring produces a molecular architecture of singlet ground state. A careful exploitation of a series of unrestricted density functional calculations enables one to avoid spin contamination in the treatment of the doublet states and shows that under ionization the system becomes of quartet multiplicity in its ground state. The possibility to align more than three spins from conjugated hydrocarbon polyradicals is explored, considering partially hydrogenated triangulenes. A dramatic example shows that ionization of a singlet ground state molecule may generate a decuplet.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Dipole polarizability of alkali-metal (Na, K, Rb)–alkaline-earth-metal (Ca, Sr) polar molecules: Prospects for alignment

Electronic open-shell ground-state properties of selected alkali-metal–alkaline-earth-metal polar molecules are investigated. We determine potential energy curves of the {sup 2}Σ{sup +} ground state at the coupled-cluster singles and doubles with partial triples (CCSD(T)) level of electron correlation. Calculated spectroscopic constants for the isotopes ({sup 23}Na, {sup 39}K, {sup 85}Rb)–({sup 40}Ca, {sup 88}Sr) are compared with available theoretical and experimental results. The variation of the permanent dipole moment (PDM), average dipole polarizability, and polarizability anisotropy with internuclear distance is determined using finite-field perturbation theory at the CCSD(T) level. Owing to moderate PDM (KCa: 1.67 D, RbCa: 1.75 D, KSr: 1.27 D, RbSr: 1.41 D) and large polarizability anisotropy (KCa: 566 a.u., RbCa: 604 a.u., KSr: 574 a.u., RbSr: 615 a.u.), KCa, RbCa, KSr, and RbSr are potential candidates for alignment and orientation in combined intense laser and external static electric fields.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces

Energy-band alignments for molybdenum disulphide (MoS{sub 2}) films on high-k dielectric oxides have been studied using photoemission spectroscopy. The valence band offset (VBO) at monolayer MoS{sub 2}/Al{sub 2}O{sub 3} (ZrO{sub 2}) interface was measured to be 3.31 eV (2.76 eV), while the conduction-band offset (CBO) was 3.56 eV (1.22 eV). For bulk MoS{sub 2}/Al{sub 2}O{sub 3} interface, both VBO and CBO increase by ∼0.3 eV, due to the upwards shift of Mo 4d{sub z{sup 2}} band. The symmetric change of VBO and CBO implies Fermi level pinning by interfacial states. Our finding ensures the practical application of both p-type and n-type MoS{sub 2} based complementary metal-oxide semiconductor and other transistor devices using Al{sub 2}O{sub 3} and ZrO{sub 2} as gate materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Temperature dependent electrical transport studies of self-aligned ZnO nanorods/Si heterostructures deposited by sputtering

Self-aligned ZnO nanorods (NRs) were grown on n-Si(100) substrate by RF sputtering techniques. The NRs are uniformly grown on 2-inch wafer along [0001] direction. Single-crystalline wurtzite structure of ZnO NRs was confirmed by X-ray diffraction. The average diameter, height, and density of NRs are found 48 nm, 750 nm, and 1.26 × 10{sup 10} cm{sup −2}, respectively. The current-voltages (I-V) characteristics of ZnO NRs/Si heterojunction (HJ) were studied in the temperature range of 120–300 K and it shows a rectifying behavior. Barrier height (ϕ{sub B}) and ideality factor (η) were estimated from thermionic emission model and found to be highly temperature dependent in nature. Richardson constant (A{sup *}) was evaluated using Richardson plot of ln(I{sub o}/T{sup 2}) versus q/kT plot by linear fitting in two temperature range 120–180 K and 210–300 K. Large deviation in Richardson constant from its theoretical value of n-Si indicates the presence of barrier inhomogeneities at HJ. Double Gaussian distribution of barrier height with thermionic equation gives mean barrier heights of 0.55 ± 0.01 eV and 0.86 ± 0.02 eV for two different temperature regions 120–180 K and 210–300 K, respectively. Modified Richardson plot provided two values of Richardson constant for two temperature regions. However, for higher temperature range (210–300 K), the calculated value of Richardson constant ∼123 A cm{sup −2} K{sup −2} was close to the ideal Richardson constant for n-Si.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ion-temperature-gradient sensitivity of the hydrodynamic instability caused by shear in the magnetic-field-aligned plasma flow

The cross-magnetic-field (i.e., perpendicular) profile of ion temperature and the perpendicular profile of the magnetic-field-aligned (parallel) plasma flow are sometimes inhomogeneous for space and laboratory plasma. Instability caused either by a gradient in the ion-temperature profile or by shear in the parallel flow has been discussed extensively in the literature. In this paper, (1) hydrodynamic plasma stability is investigated, (2) real and imaginary frequency are quantified over a range of the shear parameter, the normalized wavenumber, and the ratio of density-gradient and ion-temperature-gradient scale lengths, and (3) the role of inverse Landau damping is illustrated for the case of combined ion-temperature gradient and parallel-flow shear. We find that increasing the ion-temperature gradient reduces the instability threshold for the hydrodynamic parallel-flow shear instability, also known as the parallel Kelvin-Helmholtz instability or the D'Angelo instability. We also find that a kinetic instability arises from the coupled, reinforcing action of both free-energy sources. For the case of comparable electron and ion temperature, we illustrate analytically the transition of the D'Angelo instability to the kinetic instability as (a) the shear parameter, (b) the normalized wavenumber, and (c) the ratio of density-gradient and ion-temperature-gradient scale lengths are varied and we attribute the changes in stability to changes in the amount of inverse ion Landau damping. We show that near a normalized wavenumber k{sub ⊥}ρ{sub i} of order unity (i) the real and imaginary values of frequency become comparable and (ii) the imaginary frequency, i.e., the growth rate, peaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition

The band alignment between Ga-face GaN and atomic-layer-deposited ZrO{sub 2} was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO{sub 2} layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 1 ± 0.2 eV and conduction band discontinuity ΔE{sub C} of 1.2 ± 0.2 eV at ZrO{sub 2}/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO{sub 2} layer into account.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Highly polarized light emission by isotropic quantum dots integrated with magnetically aligned segmented nanowires

In this work, we demonstrate a proof-of-concept system for generating highly polarized light from colloidal quantum dots (QDs) coupled with magnetically aligned segmented Au/Ni/Au nanowires (NWs). Optical characterizations reveal that the optimized QD-NW coupled structures emit highly polarized light with an s-to p-polarization (s/p) contrast as high as 15:1 corresponding to a degree of polarization of 0.88. These experimental results are supported by the finite-difference time-domain simulations, which demonstrate the interplay between the inter-NW distance and the degree of polarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Thermal conductivity of vertically aligned carbon nanotube arrays: Growth conditions and tube inhomogeneity

The thermal conductivity of vertically aligned carbon nanotube arrays (VACNTAs) grown on silicon dioxide substrates via chemical vapor deposition is measured using a 3ω technique. For each sample, the VACNTA layer and substrate are pressed to a heating line at varying pressures to extract the sample's thermophysical properties. The nanotubes' structure is observed via transmission electron microscopy and Raman spectroscopy. The presence of hydrogen and water vapor in the fabrication process is tuned to observe the effect on measured thermal properties. The presence of iron catalyst particles within the individual nanotubes prevents the array from achieving the overall thermal conductivity anticipated based on reported measurements of individual nanotubes and the packing density.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Long range emission enhancement and anisotropy in coupled quantum dots induced by aligned gold nanoantenna

Quantum dot arrays have been projected as the material of choice for next generation displays and photodetectors. Extensive ongoing research aims at improving optical and electrical efficiencies of such devices. We report experimental results on non-local long range emission intensity enhancement and anisotropy in quantum dot assemblies induced by isolated and partially aligned gold nanoantennas. Spatially resolved photoluminescence clearly demonstrate that the effect is maximum, when the longitudinal surface plasmon resonance of the nanoantenna is resonant with the emission maxima of the quantum dots. We estimated the decay length of this enhancement to be ∼2.6 μm, which is considerably larger than the range of near field interaction of metal nanoantenna. Numerical simulations qualitatively capture the near field behavior of the nanorods but fail to match the experimentally observed non-local effects. We have suggested how strong interactions of quantum dots in the close packed assemblies, mediated by the nanoantennas, could lead to such observed behavior.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

The process of EDC-NHS cross-linking of reconstituted collagen fibres increases collagen fibrillar order and alignment

We describe the production of collagen fibre bundles through a multi-strand, semi-continuous extrusion process. Cross-linking using an EDC (1-ethyl-3-(3-dimethylaminopropyl)carbodiimide), NHS (N-hydroxysuccinimide) combination was considered. Atomic Force Microscopy and Raman spectroscopy focused on how cross-linking affected the collagen fibrillar structure. In the cross-linked fibres, a clear fibrillar structure comparable to native collagen was observed which was not observed in the non-cross-linked fibre. The amide III doublet in the Raman spectra provided additional evidence of alignment in the cross-linked fibres. Raman spectroscopy also indicated no residual polyethylene glycol (from the fibre forming buffer) or water in any of the fibres.

36 MATERIALS SCIENCE↗