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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

All-solid-state supercapacitors from natural lignin-based composite film by laser direct writing

Lignin as a renewable natural resource has been the aim of numerical interest in applications ranging from pitch to porous carbon material. In this work, a facile method is reported to transform lignin into porous conductive carbon structures and interdigitated circuits for supercapacitor devices using femtosecond laser direct writing. Comparative studies revealed that the laser irradiation induced tetrahedral amorphous carbon while only graphitic carbon was obtained through pyrolysis. At the same time, the composite membrane was easily prepared to further optimize the capacities by mixing functional materials (MoS 2 ) into the lignin/polyacrylonitrile (PAN) composite polymers. A MoS2 decorated porous carbon network material could be fabricated through focused femtosecond pulsed laser irradiation of the corresponding composite membranes. The microstructure and spectroscopic features of these laser induced hybrid carbon materials have been deeply investigated. The supercapacitor based on lignin/PAN has high areal specific capacitances of 6.7 mF cm –2 (0.9 F cm –3 ) at 10 mV s –1 . Moreover, doped microsupercapacitors with MoS2 demonstrated enhanced areal capacitances up to 16 mF cm –2 (2.2 F cm –3 ) and at 10 mV s –1 , respectively. The relatively high areal capacitances indicate that the introduced method is potential for innovative manufacturing energy storage devices based on natural lignin.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Strong-coupling quantum dot microscope

Here, we report the development and fabrication of a novel cryogenic instrument, a scanning quantum dot microscope (SQDM), capable of positioning a quantum dot to within tunneling range of a sample surface. The microscope is strong-coupling in the sense that electron wavefunctions in the quantum dot can directly overlap with electron wavefunctions in the sample, in contrast to probes based on electric-field coupling. The SQDM consists of a sharp glass probe with two asymmetric electrodes leading to an aluminum quantum dot at the apex. One electrode is capacitively coupled to the quantum dot, while the other lead is connected to the dot via a tunneling junction. A charge sensing circuit constructed from a high-electron-mobility transistor is attached to the capacitance lead to measure the charge state of the dot. The last key feature of the design is a tilted-apex geometry. This design feature, in conjunction with the capacitive sensing scheme, results in a robust quantum-dot probe capable of operating within angstrom distances of the sample surface while protecting the single tunnel junction responsible for electron transport onto the quantum dot. We demonstrate that our instrument can detect single-electron tunneling events and can also be operated as a standard scanning tunneling microscope capable of nanometer-scale resolution of the surface topography.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Correcting impedance measurements for background parasitics to characterize circuit components in cryogenic environments

Predictable circuit response is a critical prerequisite for accurate electronic measurements. Here, we describe a powerful yet straightforward experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an in situ parasitic-impedance background-correction procedure to measure the temperature-dependent impedance (magnitude and phase) of up to ten individual passive circuit elements in a single cryostat run. We show how the model unambiguously identified a ∼20× drop in capacitance for 22 μF 5XR multilayer ceramic capacitors cooled from 300 K to 360 mK in an environment with a parasitic capacitance of ∼300 pF. The same experimental procedure, based on a simple two-wire measurement, was also used to measure 10 and 22 pF thin-film capacitors and 100 MΩ thick-film resistors. The results showed that the resistor values increased by up to an order of magnitude when the devices were cooled from 300 K to 360 mK. Most importantly, we showed that the simple data-acquisition method, coupled with our analysis model, enabled the measurement of component parasitics, and effectively extended the accuracy of a commercial LCR meter beyond its manufacturer-guaranteed values for a wide range of measurement frequencies. We also showed that, in the current configuration, our simple approach is limited to a capacitance accuracy of ∼10 pF.

Carpenter, R. J. [Santa Clara Univ., Santa Clara, ↗
DOE OSTI2016

Can ionophobic nanopores enhance the energy storage capacity of electric-double-layer capacitors containing nonaqueous electrolytes?

The ionophobicity effect of nanoporous electrodes on the capacitance and the energy storage capacity of nonaqueous-electrolyte supercapacitors is studied by means of the classical density functional theory (DFT). It has been hypothesized that ionophobic nanopores may create obstacles in charging, but they store energy much more efficiently than ionophilic pores. In this paper, we find that, for both ionic liquids and organic electrolytes, an ionophobic pore exhibits a charging behavior different from that of an ionophilic pore, and that the capacitance–voltage curve changes from a bell shape to a two-hump camel shape when the pore ionophobicity increases. For electric-double-layer capacitors containing organic electrolytes, an increase in the ionophobicity of the nanopores leads to a higher capacity for energy storage. Without taking into account the effects of background screening, the DFT predicts that an ionophobic pore containing an ionic liquid does not enhance the supercapacitor performance within the practical voltage ranges. However, by using an effective dielectric constant to account for ion polarizability, the DFT predicts that, like an organic electrolyte, an ionophobic pore with an ionic liquid is also able to increase the energy stored when the electrode voltage is beyond a certain value. We find that the critical voltage for an enhanced capacitance in an ionic liquid is larger than that in an organic electrolyte. Finally, our theoretical predictions provide further understanding of how chemical modification of porous electrodes affects the performance of supercapacitors.

25 ENERGY STORAGE↗
DOE OSTI2024

Transport signatures of phase fluctuations in superconducting qubits

Abstract Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junctions and identically fabricated capacitively-shunted junctions that show two distinct features normally attributed to small capacitance junctions near zero bias: reduced switching currents and prominent finite resistance associated with phase diffusion in the current–voltage characteristic. Our transport data reveals the existence of phase fluctuations in transmons arising from intrinsic junction capacitance.

Wisne, M. (ORCID:0009000610684209)↗
DOE OSTI2020

Merged-Element Transmon

Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb–amorphous-Si–Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state-dependent shift in the low-power regime. The device also demonstrates the single-photon and multiphoton transitions that represent a weakly anharmonic system in two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. Here, a participation-ratio analysis identifies the dielectric loss of the amorphous-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence for relatively small device dimensions when implemented with a low-loss, epitaxially grown, and lattice-matched trilayer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory

In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.

42 ENGINEERING↗
DOE OSTI2014

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

Ericson, N↗
DOE OSTI2014

Datasheet Driven Silicon Carbide Power MOSFET Model

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 degrees C to 225 degrees C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.

Mudholkar, M↗
DOE OSTI2017

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode, which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2015

Subwavelength films for standoff radiation dosimetry

We present optical subwavelength nanostructure architecture suitable for standoff radiation dosimetry with remote optical readout in the visible or infrared spectral regions. To achieve this, films of subwavelength structures are fabricated over several square inches via the creation of a 2D non-close packed (NCP) array template of radiation-sensitive polymeric nanoparticles, followed by magnetron sputtering of a metallic coating to form a 2D array of separated hemispherical nanoscale metallic shells. The nanoshells are highly reflective at resonance in the visible or infrared depending on design. These structures and their behavior are based on the open ring resonator (ORR) architecture and have their analog in resonant inductive-capacitive (LC) circuits, which display a resonance wavelength that is inversely proportional to the square root of the product of the inductance and capacitance. Therefore, any modification of the nanostructure material properties due to radiation alters the inductive or capacitive behavior of the subwavelength features, which in turn changes their optical properties resulting in a shift in the optical resonance. This shift in resonance may be remotely interrogated actively using either laser illumination or passively by hyperspectral or multispectral sensing with broadband illumination. These structures may be designed to be either anisotropic or isotropic, which can also offer polarization-sensitive interrogation. We present experimental measurements of a radiation induced shift in the optical resonance of a subwavelength film after exposure to an absorbed dose of gamma radiation from 2 Mrad up to 62 Mrad demonstrating the effect. Interestingly the resonance shift is non-monotonic for this material system and possible radiation damage mechanisms to the nanoparticles are discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Optimization principles and the figure of merit for triboelectric generators

Energy harvesting with triboelectric nanogenerators is a burgeoning field, with a growing portfolio of creative application schemes attracting much interest. Although power generation capabilities and its optimization are one of the most important subjects, a satisfactory elemental model that illustrates the basic principles and sets the optimization guideline remains elusive. We use a simple model to clarify how the energy generation mechanism is electrostatic induction but with a time-varying character that makes the optimal matching for power generation more restrictive. By combining multiple parameters into dimensionless variables, we pinpoint the optimum condition with only two independent parameters, leading to predictions of the maximum limit of power density, which allows us to derive the triboelectric material and device figure of merit. We reveal the importance of optimizing device capacitance, not only load resistance, and minimizing the impact of parasitic capacitance. Optimized capacitances can lead to an overall increase in power density of more than 10 times.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The Effect of Proton Conductivity of Fe–N–C–Based Cathode on PEM Fuel cell Performance

A model–based impedance spectroscopy is used to determine proton conductivity, oxygen transport parameter, double layer capacitance and oxygen reduction reaction (ORR) Tafel slope in the Fe–N–C cathode catalyst layer (CCL) of a PEM fuel cell. Experimental spectra of two cells differing by the membrane thickness only are processed using a physics–based model for PEMFC impedance. The spectra have been measured in the range of current densities from 25 to 800 mA cm -2 . The ORR Tafel slope of both the cells shows almost linear growth with the current density. In one of the cells, the CCL proton conductivity σp strongly decays at the current density of 100 mA cm -2 ; this decay is accompanied by the step growth of the double layer capacitance. Other minor variations of proton conductivity and double layer capacitance with the cell current occur also in a counterphase; presumed origin of this effect is discussed. The oxygen diffusion coefficient in the cathode exhibits explosive growth with the cell current. We attribute this effect to formation of temperature and pressure gradients in the CCL due to strongly non–uniform distribution of ORR rate in the electrode.

25 ENERGY STORAGE↗
DOE OSTI2021

Mechanistic Insights of Pore Contributions in Carbon Supercapacitors by Modified Step Potential Electrochemical Spectroscopy

Porous carbons are widely used as electrode materials for electrical double layer (EDL)-type supercapacitors. Differentiation of capacitance contributions from micropores and mesopores is important to understand porous carbon capacitive behavior. However, this remains challenging to accomplish. Here, we present an improved step potential electrochemical spectroscopy method to investigate the contributions to capacitance from hierarchical pores and redox processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

This paper reports on the influence of temperature on the structure, composition, and electrical properties of TiO2 thin films deposited on n-type silicon (100) by atomic layer deposition (ALD). TiO2 layers around 20nm thick, deposited at temperatures ranging from 100 to 300 C, were studied. Samples deposited at 250 C and 200 C had the most uniform coverage as determined by atomic force microscopy. The average carbon concentration throughout the oxide layer and at the TiO2/Si interface was lowest at 200 C. Metal oxide semiconductor capacitors (MOSCAPs) were fabricated, and profiled by capacitance-voltage techniques. Negligible hysteresis was observed from a capacitance-voltage plot and the capacitance in the accumulation region was constant for the sample prepared at a 200 C ALD growth temperature. The interface trap density was on the order of 1013 eV-1cm-2 regardless of the deposition temperature.

ALD↗
DOE OSTI2013

A Semi-Empirical Two Step Carbon Corrosion Reaction Model in PEM Fuel Cells

The cathode CL of a polymer electrolyte membrane fuel cell (PEMFC) was exposed to high potentials, 1.0 to 1.4 V versus a reversible hydrogen electrode (RHE), that are typically encountered during start up/shut down operation. While both platinum dissolution and carbon corrosion occurred, the carbon corrosion effects were isolated and modeled. The presented model separates the carbon corrosion process into two reaction steps; (1) oxidation of the carbon surface to carbon-oxygen groups, and (2) further corrosion of the oxidized surface to carbon dioxide/monoxide. To oxidize and corrode the cathode catalyst carbon support, the CL was subjected to an accelerated stress test cycled the potential from 0.6 VRHE to an upper potential limit (UPL) ranging from 0.9 to 1.4 VRHE at varying dwell times. The reaction rate constants and specific capacitances of carbon and platinum were fitted by evaluating the double layer capacitance (Cdl) trends. Carbon surface oxidation increased the Cdl due to increased specific capacitance for carbon surfaces with carbon-oxygen groups, while the second corrosion reaction decreased the Cdl due to loss of the overall carbon surface area. The first oxidation step differed between carbon types, while both reaction rate constants were found to have a dependency on UPL, temperature, and gas relative humidity.

08 HYDROGEN↗