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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Additive Manufacture of Porous Zirconium Carbide for Nuclear Thermal Propulsion In-Core Insulators

Nuclear Thermal Propulsion (NTP) requires the use of in-core insulators to manage to thermal environment between high temperature fuel elements and lower temperature structural components. The unforgiving in-core operating conditions severely limit potential material candidates. Zirconium Carbide (ZrC) is a promising candidate due to a high melting temperature, high compressive strength, hardness, wear resistance, hydrogen compatibility, and low neutron absorption cross sections. However, fully dense ZrC is not an insulator but it has been found that the thermal conductivity of ZrC decreases by increasing porosity to approximately 60 % theoretical density (%TD). Previous methods for generating porous ZrC were difficult, expensive, and time consuming. Binder jet additive manufacture (AM) can print ceramic materials to near net shape. Binder jet AM is not utilized in many applications due to an inherently low post-sintering density on the order of 60 %TD. For this specific application the inherent lower density is leveraged as an advantage in production porous ZrC in order to control the thermal conductivity. A feasibility study was conducted to investigate binder jet AM parameter development for ZrC, heat treatment optimization (burn-out and sinter), microstructural characterization, mechanical testing, and thermal testing to generate near-net shape ZrC components with ~60 %TD with the desired thermal conductivity and mechanical strength.

Zirconium Carbide Additive Manufacture↗
NASA NTRS2022

Silicon Carbide Sensors and Electronics Technology for Extreme Environments: Opportunities for Nuclear Power Applications

Over the past five decades, NASA Glenn Research Center had been advancing the development of single crystal silicon carbide growth, sensors and electronics device technologies, culminating in the recent demonstration of Micro-Electro-Mechanical Systems scale batch fabricated pressure sensors operating at 800 °C and integrated circuit electronics with demonstrated durability of over 1000 hours at 500 °C. As a result of the progress made in demonstrating the high temperature capability of the technology, insertion into actual operational environments, such as in jet engines and planet Venus, are in progress. The high temperature, near inert surface chemistry, and radiation hardness attributes of SiC, coupled with the relative maturation of the device batch microfabrication, contact metallization, and packaging technologies, make the material a prime candidate for use as part of future advanced nuclear reactor instrumentation and control strategy. Hence the current research efforts at NASA Glenn are aimed toward harnessing these attributes in developing SiC sensors and electronics for nuclear reactor applications, potentially for future Lunar/Martian nuclear power and the emerging terrestrial micro nuclear power plants.

silicon carbide↗
NASA NTRSDate not supplied

Joining and Integration of Silicon Carbide-Based Ceramic Materials for Aerospace Applications: An Overview

In order to fully utilize silicon carbide-based ceramics and ceramic matrix composites (CMCs) for aerospace and ground based applications, advanced joining and integration technologies are critically needed for achieving large, complex shaped, and integrated components. Careful material selection of joining inter-layers needs to consider chemical and thermal compatibilities with the parent materials that are being joined. Also, optimization needs to be conducted to select the proper processing conditions for achieving robust joints that are well adhered, strong, uniform, crack free, and have minimal residual stresses. NASA GRC developed pressureless and pressure aided approaches for joining ceramics and CMCs include brazing, diffusion bonding, refractory eutectic phase joining, and Single-step Elevated Temperature (SET) Joining. For joining ceramics and CMCs to metals, several brazes have been utilized. Brazing approaches for joining ceramics and metals have also included tailored brazes with multiple interlayers and particle additions. An overview of the joining approaches will be provided. In addition, processing-microstructure-property relationships will be discussed.

Silicon carbide↗
NASA NTRSDate not supplied

Hard Fault Protection for a Silicon Carbide-Based Aerospace Motor Drive

Due to increasingly high DC link voltages and further advancements in the current density of silicon carbide (SiC) MOSFETs, it has become evident that conventional IGBT protection methods are not sufficient to protect these devices from overcurrent during low-inductance fault events. The use of an air core Rogowski coil topology was explored to see if it could mitigate these hard fault events. The design of this circuit resulted in safe shutdown of a low impedance phase-tophase fault, tested up to DC link voltages of 1 kV.

High Voltage↗
NASA NTRS2026

Thermodynamic Properties of Uranium-Zirconium Carbide Solid Solutions with Oxygen

Uranium-zirconium carbide solid solutions are potential candidates for fuel in space nuclear reactors. To support development of advanced robust fuels for space applications, (U y Zr 1-y )C x O z solid solutions were synthesized via carbothermic reduction with uranium, carbon, and oxygen contents raging from y=0.05 – 0.3, x=0.95 – 0.98, and z = 0.02 – 0.07. These solid solutions were subsequently characterized by X-ray diffraction and elemental combustion analysis. High-temperature oxidative drop solution calorimetry in molten sodium molybdate solvent at 1073 K was employed to determine the formation, oxidation, and mixing enthalpies of (U y Zr 1-y )C x O z solid solutions, and thereby for evaluating their thermodynamic stability. The solid solutions are enthalpically less stable than the UC and ZrC end members. They also become less stable and more reactive towards oxidation with increasing uranium content. Incorporation of oxygen into solid solutions increases their solid solution-stability and improves their oxidation resistance.

Calorimetry↗
DOE OSTI2012

USE OF SILICON CARBIDE MONITORS IN ATR IRRADIATION TESTING

In April 2007, the Department of Energy (DOE) designated the Advanced Test Reactor (ATR) a National Scientific User Facility (NSUF) to advance US leadership in nuclear science and technology. By attracting new users from universities, laboratories, and industry, the ATR will support basic and applied nuclear research and development and help address the nation's energy security needs. In support of this new program, the Idaho National Laboratory (INL) has developed in-house capabilities to fabricate, test, and qualify new and enhanced temperature sensors for irradiation testing. Although most efforts emphasize sensors capable of providing real-time data, selected tasks have been completed to enhance sensors provided in irradiation locations where instrumentation leads cannot be included, such as drop-in capsule and Hydraulic Shuttle Irradiation System (HSIS) or 'rabbit' locations. For example, silicon carbide (SiC) monitors are now available to detect peak irradiation temperatures between 200°C and 800°C. Using a resistance measurement approach, specialized equipment installed at INL's High Temperature Test Laboratory (HTTL) and specialized procedures were developed to ensure that accurate peak irradiation temperature measurements are inferred from SiC monitors irradiated at the ATR. Comparison examinations were completed by INL to demonstrate this capability, and several programs currently rely on SiC monitors for peak temperature detection. This paper discusses the use of SiC monitors at the ATR, the process used to evaluate them at the HTTL, and presents representative measurements taken using SiC monitors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

In Situ Synthesis of Uranium Carbide and its High Temperature Cubic Phase

New in situ data for the U-C system are presented, with the goal of improving knowledge of the phase diagram to enable production of new ceramic fuels. The none quenchable, cubic, δ-phase, which in turn is fundamental to computational methods, was identified. Rich datasets of the formation synthesis of uranium carbide yield kinetics data which allow the benchmarking of modeling, thermodynamic parameters etc. The order-disorder transition (carbon sublattice melting) was observed due to equal sensitivity of neutrons to both elements. This dynamic has not been accurately described in some recent simulation-based publications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2017

Steam Corrosion Investigation of Single Silicon Carbide Nanostructures

Silicon carbide (SiC) has been advanced as an alternative to zircaloy for use as an accident-tolerant fuel cladding material in next-generation water-cooled reactors. This is due, in large part, to the predicted superior corrosion resistance of SiC, as compared to zircaloy, particularly at the high temperatures that are obtained in a nuclear reactor under accident conditions. The other favorable performance metrics of SiC include its enhanced mechanical stability, low neutron absorption, low chemical reactivity, and high radiation stability. Past reports, which include theoretical and isolated experimental activities, have studied the corrosion of bulk-scale SiC in reactor-like conditions. This report will present high-temperature steam corrosion results from single SiC nanofiber-based constructs. The changes in microstructure, and the evolution of oxide thickness and SiC recession with progressive corrosion will be characterized at the atomic-to-nanoscale using transmission electron microscopy (TEM). Furthermore, the corrosion-induced degradation in mechanical properties of the SiC nanofibers will be characterized using three-point bending tests involving an atomic-force microscope (AFM) in the contact mode.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effects of N-Doping on Silicon Carbide

Silicon carbide (SiC) is a widely preferred material within many industries due to its favorable properties, most notably its low electrical resistivity at high temperatures, excellent thermal conductivity, and sturdy mechanical properties. Doping, particularly n-type doping, is shown to extremely reduce electrical resistivity, but due to structural changes within the lattice caused by interaction with thermal neutrons, it is possible that other attributes of SiC may also be affected. In addition to review of past literature and data, four-point probe testing, scanning electron microscopy, nanoindentation, strength tests, differential scanning calorimetry and laser flash analysis were used to investigate the effects of n-doping 3C ß-phase SiC. According to temperature dependent measurements, electric resistivity and thermal conductivity both declined as dopant levels increases. Dopant levels are shown to have a significant effect on the mechanical performance of SiC, with the highest dopant levels (4 x 1018 cm-3) providing a 40% decrease in elastic modulus from 420 GPa to 258 GPa and a 30% decrease in hardness from 40 GPa to 27.7 GPa. These values are still above average and doped SiC may prove valuable for nuclear applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Integral Heat Transfer Test Method for Determining Thermal Resistance of Silicon Carbide Cladding and Liquid Tin System at Elevated Temperatures - Master's Thesis Presentation University of Idaho

Presentation for master's work at University of Idaho discussing Integral Heat Transfer Test Method for Determining Thermal Resistance of Silicon Carbide Cladding and Liquid Tin System at Elevated Temperatures. Presentation covers slight literature review results/previous work, discussions on system design and approach for thermal property measurement of SiC composite and Tin system, modeling efforts, and results.

36 - MATERIALS SCIENCE↗
DOE OSTI2023

Fracture‐Resistant and Thermally Insulating Ultrahigh‐Temperature Carbide Foams

Dense ultrahigh‐temperature ceramics (UHTCs) carbides are recognized as potential materials for thermal protection systems (TPS) owing to properties beyond existing structural materials’ capabilities. Recent advances in UHTCs have enabled the development of multiscale porous microstructures. Herein, it is highlighted that the porosity in UHTCs are no longer treated as a defect but as a functional property specifically tailored for thermal insulation. It is a promising solution to design and fabricate bulk UHTC foams via a freeze‐drying (FD) approach followed by calibrated pressureless spark plasma sintering. Herein, monolithic TaC and HfC UHTC foams and their composite show the partial solid–solution formation of (Ta, Hf)C with porosity ≥50%. TaC–HfC foam (≈80–92 N) shows an intermediate load‐bearing capability compared to monolithic TaC (≈120–135 N) and HfC (≈28–35 N) foams, with no evident cracking on the sample surface. The thermal conductivity of partial solid‐solution TaC–HfC foam increases up to fivefold compared to parent UHTC foams. In the results, solid solutions’ efficacy and pores’ unidirectionality in providing thermal insulation to TaC–HfC while maintaining its high‐load bearing capability are illustrated. In conclusion, the developed technique establishes a new paradigm shift in UHTCs, expanding their potential for TPS in extreme environments.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synthesis and characterization of 2D molybdenum carbide (MXene)

Large scale synthesis and delamination of 2D Mo 2 CT x (where T is a surface termination group) has been achieved by selectively etching gallium from the recently discovered nanolaminated, ternary transition metal carbide Mo 2 Ga 2 C. Different synthesis and delamination routes result in different flake morphologies. The resistivity of free-standing Mo 2 CT x films increases by an order of magnitude as the temperature is reduced from 300 to 10 K, suggesting semiconductor-like behavior of this MXene, in contrast to Ti 3 C 2 T x which exhibits metallic behavior. At 10 K, the magnetoresistance is positive. Additionally, changes in electronic transport are observed upon annealing of the films. When 2 μm thick films are tested as electrodes in supercapacitors, capacitances as high as 700 F cm –3 in a 1 m sulfuric acid electrolyte and high capacity retention for at least 10,000 cycles at 10 A g –1 are obtained. Free-standing Mo 2 CT x films, with ≈8 wt% carbon nanotubes, perform well when tested as an electrode material for Li-ions, especially at high rates. In conclusion, at 20 and 131 C cycling rates, stable reversible capacities of 250 and 76 mAh g –1 , respectively, are achieved for over 1000 cycles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Self‐Assembly of Large‐Area 2D Polycrystalline Transition Metal Carbides for Hydrogen Electrocatalysis

Abstract Low‐dimensional (0/1/2 dimension) transition metal carbides (TMCs) possess intriguing electrical, mechanical, and electrochemical properties, and they serve as convenient supports for transition metal catalysts. Large‐area single‐crystalline 2D TMC sheets are generally prepared by exfoliating MXene sheets from MAX phases. Here, a versatile bottom‐up method is reported for preparing ultrathin TMC sheets (≈10 nm in thickness and >100 μm in lateral size) with metal nanoparticle decoration. A gelatin hydrogel is employed as a scaffold to coordinate metal ions (Mo 5+ , W 6+ , Co 2+ ), resulting in ultrathin‐film morphologies of diverse TMC sheets. Carbonization of the scaffold at 600 °C presents a facile route to the corresponding MoC x , WC x , CoC x , and to metal‐rich hybrids (Mo 2− x W x C and W/Mo 2 C–Co). Among these materials, the Mo 2 C–Co hybrid provides excellent hydrogen evolution reaction (HER) efficiency (Tafel slope of 39 mV dec −1 and 48 mVj = 10 mA cm‐2 in overpotential in 0.5 m H 2 SO 4 ). Such performance makes Mo 2 C–Co a viable noble‐metal‐free catalyst for the HER, and is competitive with the standard platinum on carbon support. This template‐assisted, self‐assembling, scalable, and low‐cost manufacturing process presents a new tactic to construct low‐dimensional TMCs with applications in various clean‐energy‐related fields.

Zang, Xining↗
DOE OSTI2019

Edge Segregated Polymorphism in 2D Molybdenum Carbide

Molybdenum carbide (Mo 2 C), a class of unterminated MXene, is endowed with rich polymorph chemistry, but the growth conditions of the various polymorphs are not understood. Other than the most commonly observed T-phase Mo 2 C, little is known about other phases. Here, Mo 2 C crystals are successfully grown consisting of mixed polymorphs and polytypes via a diffusion-mediated mechanism, using liquid copper as the diffusion barrier between the elemental precursors of Mo and C. By controlling the thickness of the copper diffusion barrier layer, the crystal growth can be controlled between a highly uniform AA-stacked T-phase Mo 2 C and a “wedding cake” like Mo 2 C crystal with spatially delineated zone in which the Bernal -stacked Mo 2 C predominate. The atomic structures, as well as the transformations between distinct stackings, are simulated and analyzed using density functional theory (DFT)-based calculations. Bernal -stacked Mo 2 C has a d band closer to the Fermi energy, leading to a promising performance in catalysis as verified in hydrogen evolution reaction (HER).

36 MATERIALS SCIENCE↗
DOE OSTI2023

Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond-Like Coating

Silicon carbide (SiC) is one of the hardest known materials. Its exceptional mechanical properties combined with its high thermal conductivity make it a very attractive material for a variety of technological applications. Recently, it was discovered that two-layer epitaxial graphene films on SiC can undergo a pressure activated phase transition into a sp3 diamene structure at room temperature. Here, we show that epitaxial graphene films grown on SiC can increase the hardness of SiC up to 100% at low loads (up to 900 µN), and up to 30% at high loads (10 mN). By using a Berkovich diamond indenter and nanoindentation experiments, we demonstrate that the 30% increase in hardness is present even for indentations depths of 175 nm, almost three hundred times larger than the graphene film thickness. The experiments also show that the yield point of SiC increases up to 77% when the SiC surface is coated with epitaxial graphene. These improved mechanical properties are explained with the formation of diamene under the indenter’s pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Selective Etching of Silicon from Ti 3 SiC 2 (MAX) To Obtain 2D Titanium Carbide (MXene)

Until now, MXenes could only be produced from MAX phases containing aluminum, such as Ti 3 AlC 2 . Here, we report on the synthesis of Ti 3 C 2 (MXene) through selective etching of silicon from titanium silicon carbide—the most common MAX phase. Liters of colloidal solutions of delaminated Ti 3 SiC 2 -derived MXene (0.5–1.3 mg mL -1 ) were produced and processed into flexible and electrically conductive films, which show higher oxidation resistance than MXene synthesized from Ti 3 AlC 2 . This new synthesis method greatly widens the range of precursors for MXene synthesis.

catalysis (heterogeneous)↗
DOE OSTI2019

Enhancing Activity and Reducing Cost for Electrochemical Reduction of CO 2 by Supporting Palladium on Metal Carbides

Abstract Electrochemical CO 2 reduction reaction (CO 2 RR) with renewable electricity is a potentially sustainable method to reduce CO 2 emissions. Palladium supported on cost‐effective transition‐metal carbides (TMCs) are studied to reduce the Pd usage and tune the activity and selectivity of the CO 2 RR to produce synthesis gas, using a combined approach of studying thin films and practical powder catalysts, in situ characterization, and density functional theory (DFT) calculations. Notably, Pd/TaC exhibits higher CO 2 RR activity, stability and CO Faradaic efficiency than those of commercial Pd/C while significantly reducing the Pd loading. In situ measurements confirm the transformation of Pd into hydride (PdH) under the CO 2 RR environment. DFT calculations reveal that the TMC substrates modify the binding energies of key intermediates on supported PdH. This work suggests the prospect of using TMCs as low‐cost and stable substrates to support and modify Pd for enhanced CO 2 RR activity.

Wang, Jiajun↗
DOE OSTI2023

Highly Selective Photoelectroreduction of Carbon Dioxide to Ethanol over Graphene/Silicon Carbide Composites

Using sunlight to produce valuable chemicals and fuels from carbon dioxide (CO 2 ), i.e., artificial photosynthesis (AP) is a promising strategy to achieve solar energy storage and a negative carbon cycle. However, selective synthesis of C 2 compounds with a high CO 2 conversion rate remains challenging for current AP technologies. Here, we performed CO 2 photoelectroreduction over a graphene/silicon carbide (SiC) catalyst under simulated solar irradiation with ethanol (C 2 H 5 OH) selectivity of>99 % and a CO 2 conversion rate of up to 17.1 mmol g cat -1 h -1 with sustained performance. Experimental and theoretical investigations indicated an optimal interfacial layer to facilitate the transfer of photogenerated electrons from the SiC substrate to the few-layer graphene overlayer, which also favored an efficient CO 2 to C 2 H 5 OH conversion pathway.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗