Search NASA⌕ Search

SEARCH · Search NASA

Results for “FERROELECTRICS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 919 records · Page 51

Microwave a.c. conductivity of domain walls in ferroelectric thin films

Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

36 MATERIALS SCIENCE↗

Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films

Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr 1-x Ti x O 3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.

36 MATERIALS SCIENCE↗

Configurable topological textures in strain graded ferroelectric nanoplates

Topological defects in matter behave collectively to form highly non-trivial structures called topological textures that are characterised by conserved quantities such as the winding number. Here we show that an epitaxial ferroelectric square nanoplate of bismuth ferrite subjected to a large strain gradient (as much as 10 5 m -1 ) associated with misfit strain relaxation enables five discrete levels for the ferroelectric topological invariant of the entire system because of its peculiar radial quadrant domain texture and its inherent domain wall chirality. The total winding number of the topological texture can be configured from-1 to 3 by selective non-local electric switching of the quadrant domains. By using angle-resolved piezoresponse force microscopy in conjunction with local winding number analysis, we directly identify the existence of vortices and anti-vortices, observe pair creation and annihilation and manipulate the net number of vortices. Our findings offer a useful concept for multi-level topological defect memory.

Science & Technology - Other Topics↗

Experimental search for high-temperature ferroelectric perovskites guided by two-step machine learning

Experimental search for high-temperature ferroelectric perovskites is a challenging task due to the vast chemical space and lack of predictive guidelines. Here, we demonstrate a two-step machine learning approach to guide experiments in search of xBi½Me0 yMe00 ð1yÞO3–(1 - x) PbTiO3-based perovskites with high ferroelectric Curie temperature. These involve classification learning to screen for compositions in the perovskite structures, and regression coupled to active learning to identify promising perovskites for synthesis and feedback. The problem is challenging because the search space is vast, spanning ~61,500 compositions and only 167 are experimentally studied. Furthermore, not every composition can be synthesized in the perovskite phase. In this work, we predict x, y, Me', and Me" such that the resulting compositions have both high Curie temperature and form in the perovskite structure. Outcomes from both successful and failed experiments then iteratively refine the machine learning models via an active learning loop. Our approach finds six perovskites out of ten compositions synthesized, including three previously unexplored {Me'Me"} pairs, with 0.2Bi (Fe0.12Co0.88)O3–0.8PbTiO3 showing the highest measured Curie temperature of 898 K among them.

36 MATERIALS SCIENCE↗

Revealing ferroelectric switching character using deep recurrent neural networks

The ability to manipulate domains underpins function in applications of ferroelectrics. While there have been demonstrations of controlled nanoscale manipulation of domain structures to drive emergent properties, such approaches lack an internal feedback loop required for automatic manipulation. Here, using a deep sequence-to-sequence autoencoder we automate the extraction of latent features of nanoscale ferroelectric switching from piezoresponse force spectroscopy of tensile-strained PbZr 0.2 Ti 0.8 O 3 with a hierarchical domain structure. We identify characteristic behavior in the piezoresponse and cantilever resonance hysteresis loops, which allows for the classification and quantification of nanoscale-switching mechanisms. Specifically, we identify elastic hardening events which are associated with the nucleation and growth of charged domain walls. This work demonstrates the efficacy of unsupervised neural networks in learning features of a material's physical response from nanoscale multichannel hyperspectral imagery and provides new capabilities in leveraging in operando spectroscopies that could enable the automated manipulation of nanoscale structures in materials.

36 MATERIALS SCIENCE↗

Emergent topological polarization textures in relaxor ferroelectrics

Relaxor ferroelectrics underpin high-performance actuators and sensors, yet the nature of polar heterogeneities driving their broadband dielectric response remains debated. Using a unified, multimodal structural refinement framework— simultaneously fitting complementary X-ray and neutron total scattering, X-ray absorption spectra, and diffuse scattering—we reconstruct 3D mesoscale polarization maps in the classic relaxor system PbMg 1/3 Nb 2/3 O 3 –PbTiO 3 . We uncover self-organized swirling polarization textures with half-skyrmion (meron) vortices, challenging models of independent polar nanoregions. These textures, characterized by smooth changes in the polarization direction, originate from overlapping volumes in which the projections of locally correlated polarization vectors onto each volume’s long axis share the same sign. Vortex cores correlate strongly with local charge and strain gradients imposed by compositional heterogeneities. In this work, our results suggest that chemical disorder, acting via depolarizing and strain fields, stabilizes topological vortex textures of the polarization field, offering a route for engineering new dielectric and ferroelectric functionalities.

Eremenko, Maksim [National Institute of Standards ↗

Manipulating chiral spin transport with ferroelectric polarization

A magnon is a collective excitation of the spin structure in a magnetic insulator and can transmit spin angular momentum with negligible dissipation. This quantum of a spin wave has always been manipulated through magnetic dipoles (that is, by breaking time-reversal symmetry). Here we report the experimental observation of chiral spin transport in multiferroic BiFeO 3 and its control by reversing the ferroelectric polarization (that is, by breaking spatial inversion symmetry). The ferroelectrically controlled magnons show up to 18% modulation at room temperature. The spin torque that the magnons in BiFeO 3 carry can be used to efficiently switch the magnetization of adjacent magnets, with a spin-torque efficiency comparable to the spin Hall effect in heavy metals. Utilizing such controllable magnon generation and transmission in BiFeO 3 , an all-oxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection and magnetoelectric control. In conclusion, our observations open a new chapter of multiferroic magnons and pave another path towards low-dissipation nanoelectronics.

36 MATERIALS SCIENCE↗

On-demand nanoengineering of in-plane ferroelectric topologies

Hierarchical assemblies of ferroelectric nanodomains, so-called super-domains, can exhibit exotic morphologies that lead to distinct behaviours. Controlling these super-domains reliably is critical for realizing states with desired functional properties. Here we reveal the super-switching mechanism by using a biased atomic force microscopy tip, that is, the switching of the in-plane super-domains, of a model ferroelectric Pb 0.6 Sr 0.4 TiO 3 . We demonstrate that the writing process is dominated by a super-domain nucleation and stabilization process. A complex scanning-probe trajectory enables on-demand formation of intricate centre-divergent, centre-convergent and flux-closure polar structures. Correlative piezoresponse force microscopy and optical spectroscopy confirm the topological nature and tunability of the emergent structures. The precise and versatile nanolithography in a ferroic material and the stability of the generated structures, also validated by phase-field modelling, suggests potential for reliable multi-state nanodevice architectures and, thereby, an alternative route for the creation of tunable topological structures for applications in neuromorphic circuits.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ferroelectric quantum Hall phase revealed by visualizing Landau level wave function interference

States with spontaneously broken symmetry can form due to Coulomb interactions in electronic systems with multiple internal degrees of freedom. Materials with several degenerate regions in the Brillouin zone-called valleys-offer a rich setting for the emergence of such states, which have potential electronic and optical applications. To date, identification of these broken-symmetry phases has mostly relied on macroscopic transport or optical properties. Here we demonstrate a direct approach by visualizing the wavefunctions of bismuth surface states with a scanning tunnelling microscope. Strong spin-orbit coupling on the surface of bismuth leads to six degenerate, teardrop-shaped, hole valleys. Our spectroscopic measurements reveal that exchange interactions fully lift this degeneracy at high magnetic field, and we are able to determine the nature of the valley ordering by imaging the broken-symmetry Landau level wavefunctions. The spatial features of singly degenerate Landau level wavefunctions near isolated defects contain unique signatures of interference between spin-textured valleys, which identify the electronic ground state as a quantum Hall ferroelectric. As a result, our observations confirm the recent prediction that interactions in strongly anisotropic valley systems favour the occupation of a single valley, giving rise to emergent ferroelectricity in the surface state of bismuth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Atomic-level structural correlations across the morphotropic phase boundary of a ferroelectric solid solution: xBiMg 1/2 Ti 1/2 O 3 -(1$-$x)PbTiO 3

Revelation of unequivocal structural information at the atomic level for complex systems is uniquely important for deeper and generic understanding of the structure property connections and a key challenge in materials science. Here in this paper we report an experimental study of the local structure by applying total elastic scattering and Raman scattering analyses to an important non-relaxor ferroelectric solid solution exhibiting the so-called composition-induced morphotropic phase boundary (MPB), where concomitant enhancement of physical properties have been detected. The powerful combination of static and dynamic structural probes enabled us to derive direct correspondence between the atomic-level structural correlations and reported properties. The atomic pair distribution functions obtained from the neutron total scattering experiments were analysed through big-box atom-modelling implementing reverse Monte Carlo method, from which distributions of magnitudes and directions of off-centred cationic displacements were extracted. We found that an enhanced randomness of the displacement-directions for all ferroelectrically active cations combined with a strong dynamical coupling between the A- and B-site cations of the perovskite structure, can explain the abrupt amplification of piezoelectric response of the system near MPB. Finally, altogether this provides a more fundamental basis in inferring structure-property connections in similar systems including important implications in designing novel and bespoke materials.

36 MATERIALS SCIENCE↗

Controllable skyrmion chirality in ferroelectrics

Chirality, an intrinsic handedness, is one of the most intriguing fundamental phenomena in nature. Materials composed of chiral molecules find broad applications in areas ranging from nonlinear optics and spintronics to biology and pharmaceuticals. However, chirality is usually an invariable inherent property of a given material that cannot be easily changed at will. Here, we demonstrate that ferroelectric nanodots support skyrmions the chirality of which can be controlled and switched. We devise protocols for realizing control and efficient manipulations of the different types of skyrmions. Our findings open the route for controlled chirality with potential applications in ferroelectric-based information technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric–antiferromagnetic–ferrimagnetic nanocomposites

Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3-1-type multiferroic nanocomposite in which a one-dimensional magnetic column is embedded in a three-dimensional ferroelectric matrix. However, it suffers from a number of limitations including unwanted leakage currents and the need for biasing with a magnetic field. Here we show that the addition of an antiferromagnet to a 3-1-type multiferroic nanocomposite can lead to a large, self-biased magnetoelectric effect at room temperature. Our three-phase system is composed of a ferroelectric Na 0.5 Bi 0.5 TiO 3 matrix in which ferrimagnetic NiFe 2 O 4 nanocolumns coated with antiferromagnetic p-type NiO are embedded. This system, which is self-assembled, exhibits a magnetoelectric coefficient of up to 1.38 × 10 –9 s m –1 , which is large enough to switch the magnetic anisotropy from the easy axis (K eff = 0.91 × 10 4 J m –3 ) to the easy plane (K eff = –1.65 × 10 4 J m –3 ).

42 ENGINEERING↗

Ferroelectric-like SrTiO3 surface dipoles probed by graphene

The electrical transport properties of graphene are greatly influenced by its environment. Owing to its high dielectric constant, strontium titanate (STO) is expected to suppress the long-range charged impurity scattering and consequently to enhance the mobility. However, the absence of such enhancement has caused some controversies regarding the scattering mechanism. In graphene devices transferred from SiO2 to STO using a newly developed technique, we observe a moderate mobility enhancement near the Dirac point, which is the point of charge neutrality achieved by adjusting the Fermi level. While bulk STO is not known as a ferroelectric material, its surface was previously reported to exhibit an outward displacement of oxygen atoms and ferroelectric-like dipole moment. When placed on STO, graphene shows strong and asymmetric hysteresis in resistivity, which is consistent with the dipole picture associated with the oxygen displacement. The hysteretic response of the surface dipole moment diminishes the polarizability, therefore weakens the ability of STO to screen the Coulomb potential of the impurities.

GRAPHENE↗

Data encoding based on the shape of the ferroelectric domains produced by a scanning probe microscopy tip

Ferroelectric materials are broadly considered for information storage due to extremely high storage and information processing densities they enable. To date, ferroelectric based data storage has invariably relied on formation of cylindrical domains, allowing for binary information encoding. Here we demonstrate and explore the potential of high-density encoding based on domain morphology. We explore the domain morphogenesis during the tip-induced polarization switching by sequences of positive and negative pulses in a lithium niobate single-crystal and demonstrate the principal of information coding by shape and size of the domains. We applied cross-correlation and neural network approaches for recognition of the switching sequence by the shape of the resulting domains and establish optimal parameters for domain shape recognition. These studies both provide insight into the highly non-trivial mechanism of domain switching and potentially establish a new paradigm for multilevel information storage and content retrieval memories. Furthermore, this approach opens a pathway to exploration of domain switching mechanisms via shape analysis.

97 MATHEMATICS AND COMPUTING↗

Giant spontaneous polarization for enhanced ferroelectric properties of biaxially oriented poly(vinylidene fluoride) by mobile oriented amorphous fractions

Poly(vinylidene fluoride) (PVDF) and its random copolymers exhibit the most distinctive ferroelectric properties; however, their spontaneous polarization (60–105 mC m -2 ) is still inferior to those (>200 mC m -2 ) of the ceramic counterparts. In this work, we report an unprecedented spontaneous polarization ( P s = 140 mC m -2 ) for a highly poled biaxially oriented PVDF (BOPVDF) film, which contains a pure β crystalline phase. Given the crystallinity of ~0.52, the P s for the β phase ( P s,β ) is calculated to be 279 mC m -2 , if a simple two-phase model of semicrystalline polymers is assumed. This high P s,β is invalid, because the theoretical limit of P s,β is 185 mC m -2 , as calculated by density functional theory. To explain such a high P s for the poled BOPVDF, a third component in the amorphous phase must participate in the ferroelectric switching to contribute to the P s . Namely, an oriented amorphous fraction (OAF) links the lamellar crystal and the mobile amorphous fraction. From the hysteresis loop study, the OAF content was determined to be ~0.28, more than 50% of the amorphous phase. Because of the high polarizability of the OAFs, the dielectric constant of the poled BOPVDF reached nearly twice the value of conventional PVDF. Overall, the fundamental knowledge obtained from this study will provide a solid foundation for the future development of PVDF-based high performance electroactive polymers for wearable electronics and soft robotic applications.

36 MATERIALS SCIENCE↗

Design of high polarization low switching barrier hybrid improper ferroelectric perovskite oxide superlattices

Hybrid improper ferroelectricity is a useful tool to design ABO 3 /A'BO 3 polar superlattices from non polar building blocks. In this study, we have designed high polarization-low switching barrier hybrid improper ferroelectric superlattices with efficient polarization, and polarization-magnetization switching properties above room temperature, using density functional theory and ab initio molecular dynamics simulations. Superlattices with a chemical formula of (AAlO 3 ) m /(A'AlO 3 ) n , where m/n = 1/1, 1/3, 3/1, 1/5 and 5/1, A, A' = Lanthanide and Y cations are considered to outline the design principles behind polarization switching and (LaFeO 3 ) 3 /(CeFeO 3 ) 1 is investigated for polarization-magnetization switching. We find that the unconventional switching paths via out-of-phase rotation Q R- (a 0 a 0 c - ) and tilt precession QTP always yield lower switching barrier compared to those via in-phase rotation Q R+ (a 0 a 0 c + ) and tilt QT (a - a - c 0 ) of BO 6 octahedra. Results from ab initio molecular dynamics simulations estimate the temperature at which the lowest energy barrier can be overcome. Furthermore, it is possible to tune the polarization switching barrier by tuning the tolerance factor, A,A' cation radius mismatch and super lattice periodicity. For switching via Q R- , the switching barrier varies exponentially with rotation angle, indicating how high switching barrier is expected for systems, away from cubic symmetry. We provide a recipe to overcome such a bottleneck by tuning superlattice periodicity. Finally, we have proposed the multiferroic device application concept through a proposed polarization-temperature hysteresis loop and magnetization switching.

36 MATERIALS SCIENCE↗

A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors

Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

Wu, Shan↗

Interface control of ferroelectricity in LaNiO{sub 3}-BaTiO{sub 3} superlattices

LaNiO{sub 3}-BaTiO{sub 3} superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO{sub 2}){sup −}/(BaO){sup 0} interfaces is enhanced from that of the superlattice with (LaO){sup +}/(TiO{sub 2}){sup 0} interfaces. The origin lies at the polar discontinuity at the interface, which makes the holes localized within the (NiO{sub 2}){sup −}/(BaO){sup 0} interface, but drives a penetration of electrons into BaTiO{sub 3} component near (LaO){sup +}/(TiO{sub 2}){sup 0} interface. Our calculations demonstrate an effective avenue to the robust ferroelectricity in BaTiO{sub 3} ultrathin films.

36 MATERIALS SCIENCE↗