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At least 919 records · Page 51

Orthogonal Interactions of CO Molecules on a One-Dimensional Substrate

We investigate the chemisorption structure of CO molecules on the quasi-one-dimensional Cu(110)-(2×1)-O surface by low-temperature scanning tunneling microscopy and density functional theory. Contrary to flat metal surfaces, where CO molecules adsorb in an upright geometry and interact through repulsive intermolecular interactions, we find the most stable adsorption structure of single CO molecules to be at Cu atoms of substrate Cu—O— chains with the Cu—CO unit bent by~±45° in two equivalent structures at low coverages. At higher coverages, CO molecules combine in the same structure into highly ordered single-molecule-wide rows perpendicular to the substrate chains in an approximately 8 ×1 full monolayer structure. Firstprinciples calculations attribute the unprecedented chemisorption behavior of CO molecules to lifting of the host Cu atoms by 1 Å from the surface Cu—O— chains, in order to optimize the bonding and reduce the repulsive interactions with the substrate. This structural distortion enables short-range intermolecular dipole—dipole attraction and creates orthogonal long-range surface-mediated repulsion leading to unusual self-assembly of CO molecules into coherent nanometer scale molecular grating structures.

54 ENVIRONMENTAL SCIENCES↗

Structural basis of substrate discrimination and integrin binding by autotaxin

Autotaxin (ATX, also known as ectonucleotide pyrophosphatase/phosphodiesterase-2, ENPP2) is a secreted lysophospholipase D that generates the lipid mediator lysophosphatidic acid (LPA), a mitogen and chemoattractant for many cell types. ATX-LPA signaling is involved in various pathologies including tumor progression and inflammation. However, the molecular basis of substrate recognition and catalysis by ATX and the mechanism by which it interacts with target cells are unclear. Here, we present the crystal structure of ATX, alone and in complex with a small-molecule inhibitor. We have identified a hydrophobic lipid-binding pocket and mapped key residues for catalysis and selection between nucleotide and phospholipid substrates. We have shown that ATX interacts with cell-surface integrins through its N-terminal somatomedin B-like domains, using an atypical mechanism. Our results define determinants of substrate discrimination by the ENPP family, suggest how ATX promotes localized LPA signaling and suggest new approaches for targeting ATX with small-molecule therapeutic agents.

59 BASIC BIOLOGICAL SCIENCES↗

Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates

Joint experimental and theoretical study of Ge nanoislands growth on pit-patterned Si substrate is carried out. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Ge by molecular-beam epitaxy. Atomic-force-microscopy studies show that at Si(100) substrate temperature 550 deg. C, Ge nanoislands are formed at the pits' edges, rather than between the pits. The effect is interpreted in terms of energy barrier, that is formed near the edge of a pit and prevents Ge transport inside the pit. By molecular dynamics calculations the value of the energy barrier 0.9 eV was obtained.

36 MATERIALS SCIENCE↗

The Role of Anti-Phase Domains in InSb-Based Structures Grown on On-Axis and Off-Axis Ge Substrates

Anti-phase domains form in InSb epilayers and InSb/Al{sub 0.20}In{sub 0.80}Sb single quantum wells when grown upon on-axis (001) Ge substrates by molecular beam epitaxy. Domain formation is partially suppressed through growth on Ge substrates with surfaces that are several degrees off the (001) or (211) axis. By using off-axis Ge substrates, room-temperature electron mobilities increased to {approx}60,000 cm{sup 2}/V-s and {approx}14,000 cm{sup 2}/V-s for a 4.0-{mu}m-thick InSb epilayer and a 25-nm InSb quantum well, respectively.

36 MATERIALS SCIENCE↗

Precise calibration of Mg concentration in Mg{sub x}Zn{sub 1-x}O thin films grown on ZnO substrates

The growth techniques for Mg{sub x}Zn{sub 1-x}O thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of Mg{sub x}Zn{sub 1-x}O thin films grown on ZnO substrates, ranging from the solubility limit of x {approx} 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to quantify low Mg content. As a lab-based method to determine the Mg content, c-axis length is measured by x-ray diffraction and is well associated with Mg content. The interpolation enables the determination of Mg content to x = 0.023, where the peak from the ZnO substrate overlaps the Mg{sub x}Zn{sub 1-x}O peak in standard laboratory equipment, and thus limits quantitative determination. At dilute Mg contents below x = 0.023, the localized exciton peak energy of the Mg{sub x}Zn{sub 1-x}O films as measured by photoluminescence is found to show a linear Mg content dependence, which is well resolved from the free exciton peak of ZnO substrate down to x = 0.0043. Our results demonstrate that x-ray diffraction and photoluminescence in combination are appropriate methods to determine Mg content in a wide Mg range from x = 0.004 to 0.40 in a laboratory environment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications

Al{sub 0.278}In{sub 0.722}N thin films have been grown on p-type Si(001) and c-plane sapphire substrates by employing radio-frequency magnetron-sputter deposition at elevated temperatures. High-resolution x-ray diffraction, as well as pole-figure measurements, reveals no phase separation of the thin films. The Al{sub 0.278}In{sub 0.722}N film grown on p-Si(001) substrate is a typical fiber-texture with AlInN(0001)//Si(001) while that on the c-sapphire exhibits the onset of epitaxy. Microscopic studies reveal that the growth is dominated by a columnar mechanism and the average columnar grain diameter is about 31.5 and 50.8 nm on p-Si(001) and c-sapphire substrates, respectively. Photoluminescence at room-temperature exhibits a strong emission peak at 1.875 eV, smaller than the optical absorption edge (2.102 eV) but larger than the theoretical bandgap energy (1.70 eV), which is attributable to the band-filling effect, as is supported by the high electron density of 4.5 Multiplication-Sign 10{sup 20} cm{sup -3}. The n-Al{sub 0.278}In{sub 0.722}N/p-Si(001) heterostructure is tested for solar cells and the results are discussed based on the I-V characteristics and their fittings.

36 MATERIALS SCIENCE↗

Optimization of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} multilayers as transparent composite electrode on flexible substrate with high figure of merit

Different multilayer structures of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} have been deposited onto flexible substrates by sputtering at room temperature to develop an indium free transparent composite electrode. The effect of Ag thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Ag morphology. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm. A new conduction mechanism has been proposed to describe the conduction before and after the critical thickness. The effective Hall resistivity of the optimized films is as low as 6.44 Multiplication-Sign 10{sup -5} Ohm-Sign -cm with a carrier concentration and mobility of 7.4 Multiplication-Sign 10{sup 21} cm{sup -3} and 13.1 cm{sup 2} /V-s, respectively, at the critical Ag layer thickness. The multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ohm-Sign /sq and an average optical transmittance of 86% at 550 nm without any substrate heating or post-annealing process. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with a 9.5 nm thick Ag layer has the highest FOM at 31.5 Multiplication-Sign 10-3 {Omega}{sup -1}, which is one of the highest FOM values reported for TCE deposited at room temperature on a flexible substrate.

36 MATERIALS SCIENCE↗

Measuring the energy flux at the substrate position during magnetron sputter deposition processes

In this work, the energetic conditions at the substrate were investigated in dc magnetron sputtering (DCMS), pulsed dc magnetron sputtering (pDCMS), and high power impulse magnetron sputtering (HiPIMS) discharges by means of an energy flux diagnostic based on a thermopile sensor, the probe being set at the substrate position. Measurements were performed in front of a titanium target for a highly unbalanced magnetic field configuration. The average power was always kept to 400 W and the probe was at the floating potential. Variation of the energy flux against the pulse peak power in HiPIMS was first investigated. It was demonstrated that the energy per deposited titanium atom is the highest for short pulses (5 {mu}s) high pulse peak power (39 kW), as in this case, the ion production is efficient and the deposition rate is reduced by self-sputtering. As the argon pressure is increased, the energy deposition is reduced as the probability of scattering in the gas phase is increased. In the case of the HiPIMS discharge run at moderate peak power density (10 kW), the energy per deposited atom was found to be lower than the one measured for DCMS and pDCMS discharges. In these conditions, the HiPIMS discharge could be characterized as soft and close to a pulsed DCMS discharge run at very low duty cycle. For the sake of comparison, measurements were also carried out in DCMS mode with a balanced magnetron cathode, in the same working conditions of pressure and power. The energy flux at the substrate is significantly increased as the discharge is generated in an unbalanced field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Precise measurement of the transverse piezoelectric coefficient for thin films on anisotropic substrate

In this study, we propose a reliable measurement method for the effective transverse piezoelectric coefficient for thin films especially on anisotropic substrate. This coefficient for piezoelectric Pb(Zr, Ti)O{sub 3} (PZT) thin films was calculated by measuring the electric field-induced tip displacement of unimorph cantilevers composed of PZT thin films and Si substrates. We evaluated the reliability of the proposed measurement method by comparing it with numerical analysis and confirmed that the relative error of the piezoelectric coefficient (e{sub 31,f}) was less than 1%. We prepared 16 different unimorph cantilevers composed of identical PZT films on different Si beam geometries that had various substrate thicknesses and cantilever widths. Although the effective transverse piezoelectric coefficient e{sub 31,f} of PZT thin films ranged from -6.5 to -14 C/m{sup 2} as a function of the applied voltage, the difference among the 16 samples with an applied voltage of 25 V was within 10%. These results demonstrate that the proposed measurement method has sufficient reliability and can be used to evaluate the effective transverse piezoelectric coefficient e{sub 31,f} of thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

36 MATERIALS SCIENCE↗

Investigating the molecule-substrate interaction of prototypic tetrapyrrole compounds: Adsorption and self-metalation of porphine on Cu(111)

We report on the adsorption and self-metalation of a prototypic tetrapyrrole compound, the free-base porphine (2H-P), on the Cu(111) surface. Our multitechnique study combines scanning tunneling microscopy (STM) results with near-edge X-ray absorption fine-structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) data whose interpretation is supported by density functional theory calculations. In the first layer in contact with the copper substrate the molecules adsorb coplanar with the surface as shown by angle-resolved NEXAFS measurements. The quenching of the first resonance in the magic angle spectra of both carbon and nitrogen regions indicates a substantial electron transfer from the substrate to the LUMO of the molecule. The stepwise annealing of a bilayer of 2H-P molecules sequentially transforms the XP and NEXAFS signatures of the nitrogen regions into those indicative of the coordinated nitrogen species of the metalated copper porphine (Cu-P), i.e., we observe a temperature-induced self-metalation of the system. Pre- and post-metalation species are clearly discriminable by STM, corroborating the spectroscopic results. Similar to the free-base porphine, the Cu-P adsorbs flat in the first layer without distortion of the macrocycle. Additionally, the electron transfer from the copper surface to the molecule is preserved upon metalation. This behavior contrasts the self-metalation of tetraphenylporphyrin (2H-TPP) on Cu(111), where both the molecular conformation and the interaction with the substrate are strongly affected by the metalation process.

36 MATERIALS SCIENCE↗

Bimodal substrate biasing to control γ-Al{sub 2}O{sub 3} deposition during reactive magnetron sputtering

Al{sub 2}O{sub 3} thin films have been deposited at substrate temperatures between 500 °C and 600 °C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.8 dpa for a substrate temperature of 500 °C. This threshold shifts to 0.6 dpa for films grown at 550 °C.

36 MATERIALS SCIENCE↗

Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

We report on Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm{sup 2} area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10{sup −8} A/cm{sup 2} at 10 V reverse bias.

36 MATERIALS SCIENCE↗

Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobility of 609 cm{sup 2} V{sup −1} s{sup −1}.

36 MATERIALS SCIENCE↗

Plasmons in graphene on uniaxial substrates

Placing graphene on uniaxial substrates may have interesting application potential for graphene-based photonic and optoelectronic devices. Here, we analytically derive the dispersion relation for graphene plasmons on uniaxial substrates and discuss their momentum, propagation length, and polarization as a function of frequency, propagation direction, and both ordinary and extraordinary dielectric permittivities of the substrate. We find that the plasmons exhibit an anisotropic propagation, yielding radially asymmetric field patterns when a point emitter launches plasmons in the graphene layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct comparison of graphene devices before and after transfer to different substrates

The entire graphene field-effect-transistor devices first fabricated on SiO{sub 2}/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the transfer are measured to calculate the mobility for a direct comparison. After transferred to different SiO{sub 2}/Si wafers, the mobility, generally, is comparable, and the defect density does not show any significant increase, which indicates the degradation due to the transfer process itself is minimal. The same method can be applied to transfer graphene devices to any arbitrary substrates (e.g., SrTiO{sub 3} or STO). The transfer method developed here not only eliminates the need to locate single-layer graphene on non-SiO{sub 2}/Si substrates for patterning but also provides a convenient way to study the effects of various substrates on graphene electronic properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic anisotropy and order structure of L1{sub 0}-FePt(001) single-crystal films grown epitaxially on (001) planes of MgO, SrTiO{sub 3}, and MgAl{sub 2}O{sub 4} substrates

L1{sub 0}–FePt(001) single-crystal films were grown epitaxially on SrTiO{sub 3}(001), MgAl{sub 2}O{sub 4}(001), and MgO(001) substrates. Their uniaxial magnetic anisotropy K{sub u} and the order structure were examined for the film thickness t range of 2–14 nm. All series of films show large K{sub u} of 4 × 10{sup 7} erg/cm{sup 3} in the thickness range higher than 10 nm, with order parameter S of 0.8 and saturation magnetization M{sub s} of 1120 emu/cm{sup 3}. K{sub u} decreased gradually as t decreased. The K{sub u} reduction was considerable when t decreased from 4 nm to 2 nm. No marked difference in the thickness dependence of K{sub u} was found in any series of films, although the lattice mismatch between FePt and the substrates was markedly different. K{sub u} reduction showed good agreement with the reduction of S for the films on MgAl{sub 2}O{sub 4} and MgO. The K{sub u} ∼ S{sup 2} plot showed an almost linear relation, which is in good agreement with theoretical predictions. Transmission electron microscopy images for a FePt film on MgO substrate revealed that the lattice mismatch between FePt(001) and MgO(001) was relaxed in the initial 1 or 2 layers of FePt(001) lattices, which is likely to be true also for two other series of films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

10 nm and 50 nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup −3} and 1.3×10{sup −3} for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗