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Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2.times. a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.
A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
Monocrystalline Si (c-Si) solar cells with passivated contacts based on the ultrathin SiOx and doped polycrystalline Si (poly-Si) layers in a poly-Si/SiOx/c Si structure show high solar cell efficiencies that are ~26%. Excellent surface passivation using these contacts is achieved via the combined effects of chemical passivation of the SiOx/c-Si interface by the SiOx layer and field-effect passivation from the heavily doped poly-Si layer. These contacts give best performance only when annealed to temperatures higher than 850 degrees C. Structural changes in the SiOx layer and dopant diffusion from poly-Si into the underlying c-Si wafer occur during this step which are hard to investigate using conventional characterization techniques. In this work we investigate poly-Si/SiOx contacts with both a 1.5 (tunneling transport) and 2.2 (pinhole transport) nm SiOx layer using atomic force microscopy techniques. Conductive AFM on n+-poly-Si/SiOx/p-Si structures show significant spatial variations for both contact types, likely due to non-uniformities in the poly-Si layer itself. The electrical and structural variations deeper into the contact were revealed by scanning Kelvin probe microscopy after precisely etching away the poly-Si and SiOx layers and few nanometers of c-Si surface. This etching was performed using tetramethylammonium hydroxide and dilute HF solutions. The resulting surface potential maps appear similar for both contacts, and show less than 500 nm size heavily-doped regions. However, further etching of the c-Si surface reveals these heavily-doped regions to be less than 200 nm deep for the 2.2 nm SiOx contact and greater than 200 nm deep for the 1.5 nm SiOx contact.
A method of fabricating a multilayer dielectric (MLD) diffraction grating by providing a multilayer stack having a grating layer, and anisotropically etching the grating layer to form grating lines having an initial lineheight, an initial linewidth, and an initial grating duty cycle, that are greater than a target lineheight, a target linewidth, and a target grating duty cycle, respectively. An isotropic wet etch solution is then used to etch back the grating lines to the target lineheight, the target linewidth, and the target grating duty cycle so as to minimize electric field intensities and maximize diffraction efficiency for a given set of MLD illumination conditions.
All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.
GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.
Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO 2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO 2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.
Traditionally, shale formations have been studied as sealing layers that prevent vertical migration of hydrocarbons and CO2 due to their low permeability and fracture porosity. Recent research has focused on storing CO2 in hydrocarbon-bearing shale formations that have already undergone depletion through primary production and using CO2 as a potential fracturing agent for unconventional reservoirs. The injected CO2 will interact with shale components (i.e. clays, organic matter) and affect rock properties through chemical alteration, matrix swelling/shrinkage, and related geomechanical effects. As changes in rock properties will impact both anthropogenic CO2 storage and hydraulic fracturing, it is imperative to increase our understanding of the CO2-shale interactions. In-situ Fourier Transform infrared (FT-IR) spectroscopy coupled with high temperature and pressure capability was used to examine the interaction of dry CO2 on Utica Shale, clay, and kerogen samples at the molecular scale and characterize vibrational changes of sorption bands sensitive to the gas-solid environment. The Utica Shale was also analyzed for micro and macro-scale chemical and physical changes before and after exposure to dry CO2 at subsurface storage conditions using surface relocation techniques via high-resolution field-emission scanning electron microscopy (FE-SEM). Brunauer-Emmett-Teller (BET) surface area/pore size analysis and quantitative adsorption isotherms were applied to understand changes in surface area, pore volumes, and understand the storage potential of CO2 in the Utica Shale sample. FT-IR and feature relocation via FE-SEM indicate carbonate formation and dissolution occurs in shale exposed to dry CO2. Results indicate that etching and pitting occur, with minor calcite precipitation along the surface of the shale sample. Quantitative isotherm results indicate that shales with a higher content of kerogen and illite-smectite clays would be expected to have the highest CO2 storage capacity provided these constituents were accessible for interaction.
Proton exchange membrane water electrolysis (PEMWE) is a promising option for hydrogen production from a variety of energy sources. Cost-effective production of hydrogen with PEMWE requires reduction of costly precious metals as well as optimization of the components and interfaces in the cell. The interface between the platinum-coated titanium porous transport layer (PTL) and catalyst layer (CL) significantly impacts the performance of the electrolyzer cell. Here, we report on two PTL modification methods, mechanical abrasion and chemical etching, which we find improve PEMWE performance by lowering the resistance of the PTL/CL interface. The PTL surface modifications enabled performance improvements up to 77 mV at 4 A cm −2 and reduction of the high frequency resistance, demonstrating that the resistance of the PTL/CL interface is a significant factor in the cell performance. The PTL surface roughness was varied using abrasive materials ranging from 0.1 to 140 μm in grain sizes and chemical etching was found to also increase the surface roughness. The surface roughness was quantified using confocal laser microscopy and the surface oxidation was measured using X-ray photoemission spectroscopy. These results demonstrate that both increasing surface roughness and oxide removal contribute to lowering the PTL/CL interfacial resistance and increasing cell performance.
Wind energy is one of the largest sources of renewable energy in the world. To further reduce the operations and maintenance (O&M) costs of wind farms, it is essential to be able to accurately pinpoint the root causes of different failure modes of interest. An example of such a failure mode that is not yet fully understood is white etching cracks (WEC). This can cause the bearing lifetime to be reduced to 5–10% of its design value. Multiple hypotheses are available in literature concerning its cause. To be able to validate or disprove these hypotheses, it is essential to have historic high-frequency measurement data (e.g., load and vibration levels) available. In time, this will allow linking to the history of the turbine operating data with failure data. This paper discusses the dynamic loading on the turbine during certain events (e.g., emergency stops, run-ups, and during normal operating conditions). By combining the number of specific events that each turbine has seen with the severity of each event, it becomes possible to assess which turbines are most likely to show signs of damage.
An appropriate electrical back contact in CdTe solar cells is crucial to achieving high power conversion efficiency. In this work, we develop a facile back surface treatment method for CdTe solar cells using hydroiodic acid (HI) and investigate the effects of HI etching on the CdTe surfaces. The electrical properties of the CdTe absorber and interfaces are characterized by current-voltage, capacitance-voltage, admittance spectroscopy, and complex capacitance spectroscopy measurements. Here, the HI-etched devices show slightly higher apparent carrier concentrations than the control devices, suggesting an increased copper doping in the CdTe absorber. The potential barrier height of the back contact is reduced from 0.430 to 0.368 eV after the HI-treatment, accompanied by reduced contact resistance and carrier recombination. Additionally, the HI-treatment eliminates a defect signature at 0.409 eV. All of these HI-treatment effects lead to improved power conversion efficiency of CdTe solar cells through enhancement of the fill factor, the short circuit current, and open circuit voltage in order of significance.
In this work, a simple method was used to sustained release of losartan (LOS) as a high blood pressure-controller drug using halloysites (HNT) as a carrier. The present work can be considered as an effective method because of using HNT as a natural source, which is available, inexpensive, safe with specific structure that led to release of drug, gradually. This carrier was improved by calcination and etching processes and their effect was investigated on loading amount and in vitro release of drug from HNT. The products were characterized by various analyses such as: BET (Brunauer–Emmett–Teller), TG (thermal gravimetry), TEM (transmission electron microscopy), and XRD (X-ray powder diffraction). According to the studies, two processes improving had no effect on structure and morphology of HNT and only increased the lumen size of them. It should be noted, removal water molecules through calcination had binary effect on halloysites: enlargement of lumen and decreasing the drug loading. Besides, release rate was investigated and it showed that maximum and minimum release rate of LOS are assigned to simple HNT and etched-HNT (EHNT), respectively. Kinetics studies confirmed that releasing the LOS molecules from HNT followed by diffusion process that is identified as Fickian diffusion.
Microfabrication techniques are critical for the rapid prototyping and development of applications for cutting edge materials. Recently diamond has gained considerable interest for quantum photonic, biosensing, inertial confinement fusion and magnetometer applications. In this article, ultra-high aspect ratio milling of diamond micropores by photon, ion and electron based methods is reported. A multiphoton absorption laser ablation approach is revealed to rapidly produce sub-10 μm diameter micropores in diamond with an aspect ratio of 14:1 and a tapered profile at the surface interface. Chemically active, oxygen focused ion beam milling produces high-aspect ratio pores in diamond with an aspect ratio of 65:1 and minimal tapering over the length of the pore, overcoming the physical interaction volume limitations imposed in conventional gallium based focused ion beam milling and laser ablation methods. Oxygen-mediated electron beam induced etching is revealed to negate the limitations imposed by physical sputtering mechanisms utilized in focused ion beam milling via the direct initiation of chemical reactions at the receding surface, producing aspect ratios on the order of 200:1. Numerical simulations reveal the physical basis for the superior aspect-ratio pore milling of the oxygen focused ion beam milling and electron beam induced etching methods. Our results demonstrate direct-write methods for the fabrication of ultra-high aspect micropores in diamond and provide insight into the underlying mechanisms of these physical processes. The three methods demonstrated here can be interchanged for applications based on the desired characteristic aspect ratio and process throughput.
The aim of this work is to find out the most suitable method for detecting and analyzing accurately the formation conditions of secondary phases, particularly Sigma-phase (σ-phase) and Chi-phase (χ-phase) in duplex stainless steels (UNS S32205 and UNS S32750). The microstructure was characterized after a solution annealing at 1080 °C followed by an isothermal heating at 830 °C for different time ranges, ranging from 1 min to 9 h, in order to enlighten the controversial point concerning the mechanism of χ-phase nucleation in relation with the σ-phase. Etched samples were observed using optical microscopy (MO), and scanning electron microscopy (FESEM) with a backscattered electron detector (BSE) was used on unetched samples. Compositional microanalysis (EDS) was carried out for identifying the different phases present in the steels. Sigma phase was easily observed using different etching procedures, whereas χ-phase was only clearly detected with FESEM–BSE on unetched samples. The compositional analyses showed that the molybdenum content in χ-phase almost doubles the content of this element in σ-phase, and as a result the kinetics of nucleation and growth were also found to be remarkably faster when the alloy content in the steel is higher. In addition, chromium nitrides and carbides were also observed to precipitate as a result of the heat treatments and, in the case of the chromium nitrides, they act as a favorable site for the nucleation of σ-phase and χ-phase. - Highlights: • Microscopy was used on heat treated duplex steels for microstructure identification. • FESEM–BSE observation on unetched samples provided the best contrast between phases. • Analyses of carbides, nitrides, chi and sigma phases were possible by EDS and WDS. • Chromium nitrides act as favorable site for the nucleation of chi and sigma phases. • Secondary phases nucleation kinetics are faster in superduplex than in duplex steels.
Highlights: • Mechanical modulus and hardness distribution mapping is obtained for the first time by NanoBlitz 3D. • Phases mapping and exact element ratio are characterized for the nano multielement carbides by EPMA. • Carbides types are confirmed by acid etching and XRD refinement. • Young's modulus of multiple carbides is verified by DFT calculations and Voigt-Reuss-Hill model. - Abstract: The relationship between types of phases, microstructure and mechanical properties is always a critical challenge for the research and application of multiphase alloys. We report for the first time that NanoBlitz 3D method implemented in iNano is used to investigate the distribution of micro mechanical modulus and hardness for the entire complex multiphase alloy Fe-6.0W-5.0Mo-4.0Cr-2.0V-0.83C by constructing the two-dimensional mapping. In order to build the correlation between the microstructure and properties, the carbides in this tempering state steel are confirmed to be Fe{sub 3}(W, Mo){sub 3}C, Cr{sub 15.58}Fe{sub 7.42}C{sub 6} and V{sub 8}C{sub 7} by acid etching and XRD refinement. The phases mapping is obtained by electron probe micro-analysis. Exact element ratio is characterized for the nano-scale multielement carbides precipitates. The Young's modulus and hardness of the precipitated carbides are up to 330 GPa and 22 GPa, respectively. The distribution range of Young's modulus and hardness is during 150 to 250 GPa and 2.5 to 7.0 GPa for the matrix phases, respectively. The experimental Young's modulus and hardness results are verified by first-principles calculations combined with Voigt-Reuss-Hill approximation. In fact, this work provides a successful demonstration to three-dimensionally characterize the micro mechanical properties for all the ceramics and alloys.
Highlights: • Electron channeling contrast imaging of crystal defects in polycrystalline diamond • Introducing acid etching as a novel protocol for diamond surface preparation • Characterization of {111} twins, {111} stacking faults and {111} helical dislocations in diamond using ECCI and EBSD - Abstract: Crystal defects are abundant in synthetic diamond produced by chemical vapor deposition (CVD). We present the first images of crystal defects in a bulk polycrystalline CVD diamond sample using general electron channeling contrast imaging (ECCI) in a field emission scanning electron microscope (FE-SEM). For enhancement of channeling contrast of this material, we introduce a novel protocol for diamond surface preparation that involves acid etching. Using this protocol, we imaged three types of crystal defects including twins, stacking faults and dislocations. Each defect was identified based on its appearance in electron channeling contrast (ECC) micrographs. We analyzed grains containing twins and dislocations using electron backscatter diffraction (EBSD) crystal orientation mapping. We found a large population of grains that contained Σ3 type twins on {111} planes with a 60°<111> angle–axis pair of misorientation for twin boundaries. In addition, we identified {111} stacking faults and {111} helical dislocations. These observations are in agreement with reports of crystal defects in CVD diamond thin foils studied by a transmission electron microscope (TEM).
Highlights: • Systematic characterization of second phase particles by combining a variety of techniques • Comparison of morphological parameters obtained from SEM, BSE, etching+CLSM and EBSD • Quantitative analysis and degree of distribution of secondary carbides • Particle size, distribution and morphology from image analysis of CLSM, SEM and EBS images - Abstract: Secondary carbides precipitated in high chromium cast irons during thermal treatments were characterized by means of different characterization techniques, including scanning electron microscopy, energy dispersive X-ray spectroscopy, electron backscattered diffraction and a combination of chemical etching with confocal scanning laser microscopy. This set of techniques provides a full morphological, chemical and crystallographic description of the analysed phases. This work evaluated different methods for optimizing the image acquisition for a further image analysis (IA) based on the threshold binarization. Finally, the carbide size, distribution and morphology were determined after IA of the images acquired by aforementioned characterization techniques. Although the different techniques report some dispersion in the value for the average particle size, the particle inter-spacing and aspect ratio meet within the error value. The proposed characterization methodology provides statistically reliable data for a further evaluation of related physical properties in composites.
Highlights: • Novel La-doped BiOCl flower-like hierarchical films. • Greatly enhanced photocatalytic degradation effect on dyes. • Specific growth mechanism was proposed. • Photocatalysis mechanism was proposed. - Abstract: A series of La-doped BiOCl hierarchical, flower-like nano-/micro-structures (NMFs) with ginkgo-leaf-like “petals” were prepared by etching La-doped Bi{sub 2}O{sub 3} films in HCl solution at room temperature. For the La-doped Bi{sub 2}O{sub 3} films, they were fabricated through hot-dipping Bi{sub 2}O{sub 3} thin films in La{sub 2}O{sub 3} powder at 650 °C. Microstructure examination revealed that the ginkgo-leaf-like La-doped BiOCl petals have a multilayered structure consisting of several ultra-thin nanosheets with different radii due to the external-to-internal etching process. The investigation on their formation mechanism revealed that the La-doped BiOCl hierarchical NMFs grew anisotropically through Ostwald ripening mechanism. Besides, the photodegradation of rhodamine B under simulated sunlight irradiation revealed that the La-doped BiOCl hierarchical NMFs possessed higher performance than pure BiOCl sample. And the active species trapping tests indicated that the photogenerated holes were the main active radicals for the degradation of rhodamine B.