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Results for “synthesis (scalable processing)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate

While nanowires and nanosheets (NSs) grown on lattice-mismatched substrates have a number of promising technological applications such as solar cells, generation of misfit dislocations (MFDs) at their interfaces is a major concern for the efficiency of these devices. Here, combined molecular-dynamics and quantum-mechanical simulations are used to study MFDs at the interface between a GaAs NS and a Si substrate. Simulation results show the existence of a critical NS thickness, below which NSs are grown free of MFDs. The calculated critical thickness value is consistent with available experimental observations. Charge transfer at the MFD core is found to modify the electronic band profile at the GaAs/Si interface significantly. These effects should have profound impacts on the efficiency of lattice-mismatched NS devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Two-dimensional electron gas in a modulation-doped SrTiO{sub 3}/Sr(Ti, Zr)O{sub 3} heterostructure

A two-dimensional electron gas (2DEG) in SrTiO{sub 3} is created via modulation doping by interfacing undoped SrTiO{sub 3} with a wider-band-gap material, SrTi{sub 1−x}Zr{sub x}O{sub 3}, which is doped n-type with La. All layers are grown using hybrid molecular beam epitaxy. Using magnetoresistance measurements, we show that electrons are transferred into the SrTiO{sub 3}, and a 2DEG is formed. In particular, Shubnikov-de Haas oscillations are shown to depend only on the perpendicular magnetic field. Experimental Shubnikov-de Haas oscillations are compared with calculations that assume multiple occupied subbands.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Thermal conductivity of Er{sup +3}:Y{sub 2}O{sub 3} films grown by atomic layer deposition

Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er{sup +3}:Y{sub 2}O{sub 3}) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m{sup −1}K{sup −1} to 8 W m{sup −1}K{sup −1} upon post deposition annealing, partially due to the suppression of the number of the -OH/H{sub 2}O bonds in the films after annealing. Thermal conductivity of the annealed film was ∼70% lower than undoped bulk single crystal yttria. The cumulative interface thermal resistivity of substrate-Er{sup +3}:Y{sub 2}O{sub 3}-metal heater was determined to be ∼2.5 × 10{sup −8} m{sup 2} K/W.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150 °C) GaN. Reducing T{sub g}, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Thermal conductivity of bulk nanostructured lead telluride

Thermal conductivity of lead telluride with embedded nanoinclusions was examined using Monte Carlo simulations with intrinsic phonon transport properties obtained from first-principles-based lattice dynamics. The nanoinclusion/matrix interfaces were set to completely reflect phonons to model the maximum interface-phonon-scattering scenario. The simulations with the geometrical cross section and volume fraction of the nanoinclusions matched to those of the experiment show that the experiment has already reached the theoretical limit of thermal conductivity. The frequency-dependent analysis additionally identifies that the thermal conductivity reduction is dominantly attributed to scattering of low frequency phonons and demonstrates mutual adaptability of nanostructuring and local disordering.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A simple differential steady-state method to measure the thermal conductivity of solid bulk materials with high accuracy

Accurate measurements of thermal conductivity are of great importance for materials research and development. Steady-state methods determine thermal conductivity directly from the proportionality between heat flow and an applied temperature difference (Fourier Law). Although theoretically simple, in practice, achieving high accuracies with steady-state methods is challenging and requires rather complex experimental setups due to temperature sensor uncertainties and parasitic heat loss. We developed a simple differential steady-state method in which the sample is mounted between an electric heater and a temperature-controlled heat sink. Our method calibrates for parasitic heat losses from the electric heater during the measurement by maintaining a constant heater temperature close to the environmental temperature while varying the heat sink temperature. This enables a large signal-to-noise ratio which permits accurate measurements of samples with small thermal conductance values without an additional heater calibration measurement or sophisticated heater guards to eliminate parasitic heater losses. Additionally, the differential nature of the method largely eliminates the uncertainties of the temperature sensors, permitting measurements with small temperature differences, which is advantageous for samples with high thermal conductance values and/or with strongly temperature-dependent thermal conductivities. In order to accelerate measurements of more than one sample, the proposed method allows for measuring several samples consecutively at each temperature measurement point without adding significant error. We demonstrate the method by performing thermal conductivity measurements on commercial bulk thermoelectric Bi 2 Te 3 samples in the temperature range of 30–150 °C with an error below 3%.

47 OTHER INSTRUMENTATION↗