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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime

We study the orbital Hall effect (OHE) in the AC regime using bilayer graphene (BLG) as a prototypical material platform. While the unbiased BLG has gapless electronic spectra, applying a perpendicular electric field creates an energy band gap that can be continuously tuned from zero to high values. By exploiting this flexibility, we demonstrate the ability to control the behavior of AC orbital Hall conductivity. Particularly, we demonstrate that the orbital Hall conductivity at the neutrality point changes its signal at a critical frequency, the value of which is proportional to the perpendicular electric field. For BLG with narrow band gaps, the active frequency region for the AC OHE may extend to a few terahertz, which is experimentally accessible with current technologies. We also consider the introduction of a perpendicular magnetic field in the weak-coupling regime using first-order perturbation theory to illustrate how the breaking of time-reversal symmetry enables the emergence of the AC charge Hall effect in the charge-doped situation and modifies the AC orbital Hall conductivity. Our calculations suggest that BLG with narrow band gaps is a practical candidate for investigating time-dependent orbital angular momentum transport. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2020

Competition of three-dimensional magnetic phases in Ca2Ru1-xFexO4: A structural perspective

The crystalline and magnetic structures of Ca 2 Ru 1 - x Fe x O 4 ( x = 0.02 , 0.05, 0.08, and 0.12) have been studied using neutron and x-ray diffraction. The Fe-doping reduces the Ru-O bond length in both apical and planar directions. The smaller Ru( Fe ) O 6 octahedron leads to its reduced distortion. The P b c a space group is maintained in all the Fe dopings, so is the octahedral flattening. Warming has a similar effect on the lattice to that of the Fe doping in releasing the distorted octahedra but precipitates an abrupt octahedral elongation near the N e ' el temperature. Two competing antiferromagnetic orders, A - and B -centered phases have been observed. The Fe-doping-relaxed crystal structure prefers the latter to the former. As the doping increases, the B -centered phase continuously grows at the cost of the A -centered one and eventually replaces it at x = 0.12 . The absence of the two-dimensional antiferromagnetic critical fluctuations above the magnetic transition temperature and the three-dimensional magnetic correlation below the transition, together with the anomalous lattice response, point to an important role of orbital degree of freedom in driving the magnetic phase competition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1975

Diffusion length measurements using the scanning electron microscope

A measurement technique employing the scanning electron microscope is described in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through the application of highly doped surface field layers. The influence of high injection level effects and low-high junction current generation on the resulting measurement was investigated. Close agreement is found between the diffusion lengths measured by this method and those obtained using a penetrating radiation technique.

Weizer, V. G.↗
NASA NTRS1979

Studies of silicon p-n junction solar cells

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Neugroschel, A.↗
DOE OSTI2025

Mitigation of Pitting on Nitrogen-Doped Niobium Surfaces through Two-Step Electropolishing

Surface processing of niobium superconducting RF cavities used in particle accelerators is crucial for determining their performance. The nitrogen (N)-doping method, developed at Fermilab, enhances the cavities’ quality factor by doping the cavity’s interior surface with N atoms at 800 °C. After N-doping, electropolishing (EP) is employed to remove the niobium nitride phases and attain the desired concentration of interstitial N atoms. This study explores the effects of EP conditions on N-doped niobium samples. The samples were electropolished at 5 to 40 °C and voltages between 3 and 22 V. Different EP voltage ranges produced two types of pits, classified based on their sizes. Larger pits, linked to higher voltages, are also affected by the reaction rate. Pitting could be reduced at a lower temperature and adequate EP voltage. However, to effectively minimize gas evolution forming large-sized pitting, peeling off the top nitride layer before EP might be beneficial. This was achieved through precise low-voltage etching, forming a two-step EP process. The process involves removing the top 100–200 nm layer at a low voltage, followed by standard EP to remove the required material. This two-step EP process effectively mitigated the pitting risk associated with gas evolution on N-doped surfaces.

43 PARTICLE ACCELERATORS↗
DOE OSTI2018

Effect of Intrinsic Defects on Electronic and Magnetic Properties in Tm-Doped GaN: First-Principles Calculations

Based on the density functional theory, we investigate the electronic and magnetic properties of various types of defect complexes formed by dopant Tm and Ga vacancies, N vacancies, or O interstitial in Tm-doped GaN. Formation energies are first calculated for all defect complexes to assess their stability. The single Tm dopant is found to introduce the local magnetic moment of about 2 μ{sub B}/Tm in GaN. However, in the case of defect complexes, the magnetic moments of Tm can be suppressed by the existence of Ga vacancies around it, while the presence of N vacancies or O interstitial does not influence the magnetic moment of Tm. In addition, each Ga vacancy in the neutral charge state induces the local magnetic moment of about 2.1 μ{sub B} and one octahedral O interstitial can lead to the local moment of about 1.6 μ{sub B}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

A Recipe for a Great Meal: A Benchtop Route from Elemental Se to Superior Thermoelectric β-Ag 2 Se

The low-temperature modification of β-Ag 2 Se has proven to be useful as a near-room-temperature thermoelectric material. Over the past years, research has been devoted to interstitial, vacancy, and substitutional doping into the parent β-Ag 2 Se structure, aiming at tuning the material’s charge and heat transport properties to enhance thermoelectric performance. The transformation of β-Ag 2 Se into α-Ag 2 Se at ~134 °C and the low solubility of dopants are the main obstacles for the doping approach. Herein, we report a facile, safe, scalable, and cost-effective benchtop approach to successfully produce metal-doped β-Ag 2 Se. The doped materials display a remarkable enhancement of thermoelectric performance with a record-high peak zT of 1.30 at 120 °C and an average zT of ~1.15 in the 25–120 °C range for 0.2 at. % Zn-doped Ag 2 Se. The enhancement in zT is attributed to point defects created by Zn doping into Ag vacancies/interstitials, which enhances the scattering of phonons and tunes the charge carrier properties, leading to the significant suppression of thermal conductivity. In conclusion, the simplicity of the synthetic method developed herein and the high performance of the final products provide an avenue to produce high-quality Ag 2 Se-based thermoelectric materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Effect of heat treatments on superconducting properties and connectivity in K-doped BaFe2As2

Abstract Fe-based superconductors and in particular K-doped BaFe 2 As 2 (K-Ba122) are materials of interest for possible future high-field applications. However the critical current density ( J c ) in polycrystalline Ba122 is still quite low and connectivity issues are suspected to be responsible. In this work we investigated the properties of high-purity, carefully processed, K-Ba122 samples synthesized with two separate heat treatments at various temperatures between 600 and 825 °C. We performed specific heat characterization and T c -distribution analysis up to 16 T and we compared them with magnetic T c and J c characterizations, and transmission-electron-microscopy (TEM) microstructures. We found no direct correlation between the magnetic T c and J c , whereas the specific heat T c -distributions did provide valuable insights. In fact the best J c -performing sample, heat treated first at 750 °C and then at 600 °C, has the peak of the T c -distributions at the highest temperatures and the least field sensitivity, thus maximizing H c2 . We also observed that the magnetic T c onset was always significantly lower than the specific heat T c : although we partially ascribe the lower magnetization T c to the small grain size (< λ , the penetration depth) of the K-Ba122 phase, this behaviour also implies the presence of some grain-boundary barriers to current flow. Comparing the T c -distribution with J c , our systematic synthesis study reveals that increasing the first heat treatment above 750 °C or the second one above 600 °C significantly compromises the connectivity and suppresses the vortex pinning properties. We conclude that high-purity precursors and clean processing are not yet enough to overcome all J c limitations. However, our study suggests that a higher temperature T c -distribution, a larger H c2 and a better connectivity could be achieved by lowering the second heat treatment temperature below 600 °C thus enhancing, as a consequence, J c .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Anion-mediated electronic effects in reducible oxides: Tuning the valence band of ceria via fluorine doping

Combining experimental spectroscopy and hybrid density functional theory calculations, we show that the incorporation of fluoride ions into a prototypical reducible oxide surface, namely, ceria(111), can induce a variety of nontrivial changes to the local electronic structure, beyond the expected increase in the number of Ce 3+ ions. Our resonant photoemission spectroscopy results reveal new states above, within, and below the valence band, which are unique to the presence of fluoride ions at the surface. With the help of hybrid density functional calculations, we show that the different states arise from fluoride ions in different atomic layers in the near surface region. In particular, we identify a structure in which a fluoride ion substitutes for an oxygen ion at the surface, with a second fluoride ion on top of a surface Ce 4+ ion giving rise to F 2p states which overlap the top of the O 2p band. The nature of this adsorbate F – –Ce 4+ resonant enhancement feature suggests that this bond is at least partially covalent. Here, our results demonstrate the versatility of anion doping as a potential means of tuning the valence band electronic structure of ceria.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Effect of Heat Treatment on the Electrical Properties of Thin Yttrium-Doped In{sub 2}O{sub 3} Films

Thin indium oxide films and In–Y–O films containing 0.7 to 3.6 at % Y have been grown by ionbeam sputtering of an indium target and a composite (indium + weighed amounts of yttrium) target in a mixture of argon and oxygen. The thin indium oxide films have a cubic crystal structure (sp. gr. Ia3̄). The incorporation of yttrium atoms into indium oxide leads to the formation of an amorphous structure in the as-grown films and an increase in their room-temperature electrical resistance by several orders of magnitude. Lowtemperature electrical resistance data indicate a change in conduction mechanism. High-temperature heat treatment of the thin In–Y–O films leads to the crystallization of their amorphous structure and an increase in their electrical resistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of Cobalt on the Crystal Structure and Magnetism of Electron-Doped Sr{sub 0.8}Ce{sub 0.2}MnO{sub 3} Oxide

The Sr{sub 0.8}Ce{sub 0.2}Mn{sub 1 –} {sub y}Co{sub y}O{sub 3 – δ} (y = 0.2, 0.3, 0.4, 0.5, and 0.6) complex oxides with the perovskite structure obtained from simple oxides by the solid–state reaction technique have been examined using structural analysis and magnetic measurements. Substitution of Co for Mn in the dilute Sr{sub 0.8}Ce{sub 0.2}MnO{sub 3} antiferromagnet with a Néel temperature of T{sub N} = 210 K leads to a decrease in the degree of tetragonal distortion of the crystal structure and transition to the cubic cell. The degeneracy of the antiferromagnetic interaction (T{sub N} = 138 K at y = 0.2) observed at the first stage of the substitution of Co for Mn changes for its gradual enhancement with an increase in the magnetic transformation temperature up to 239 K at y = 0.6. An increase in the Co content weakens the competition between the ferromagnetic and antiferromagnetic couplings and reduces the temperature of the transition to the spin-glass-like state. The magnetic inhomogeneity and formation of Co{sup 2+}–Mn{sup 4+} ferromagnetic clusters in Sr{sub 0.8}Ce{sub 0.2}Mn{sub 0.4}Co{sub 0.6}O{sub 2.69} at 140 K have been observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Symmetry Breaking Induced Activation of Nanocrystal Optical Transitions

We have analysed the effect of symmetry breaking on the optical properties of semiconductor nanocrystals due to doping by charged impurities. Using doped CdSe nanocrystals as an example, we show the effects of a Coulomb center on the exciton fine-structure and optical selection rules using symmetry theory and then quantify the effect of symmetry breaking on the exciton fine structure, modelling the charged center using a multipole expansion. The model shows that the presence of a Coulomb center breaks the nanocrystal symmetry and affects its optical properties through mixing and shifting of the hole spin and parity sublevels. This symmetry breaking, particularly for positively charged centers, shortens the radiative lifetime of CdSe nanocrystals even at room temperature, in qualitative agreement with the increase in PL efficiency observed in CdSe nanocrystals doped with positive Ag charge centers [A. Sahu et.al., Nano Lett. 12 , 2587, (2012)]. The effect of the charged center on the photoluminescence and the absorption spectra is shown, with and without the presence of compensating charges on the nanocrystal surface. While spectra of individual nanocrystals are expected to shift and broaden with the introduction of a charged center, configuration averaging and inhomogeneous broadening are shown to wash out these effects. The presence of compensating charges at the NC surface also serves to stabilize the band edge transition energies relative to NCs with no charge centers.

bio-inspired↗
DOE OSTI2021

Microstructure evolution of gadolinium doped cerium oxide under large thermal gradients

In this report the effects of large thermal gradient annealing on the microstructure of 10 mol% gadolinium doped ceria (GDC) were investigated. GDC powder was prepared by solvent deficient method and sintered at 1650 °C for 10 h to achieve dense ceramics with ~8 μm grain size. The densified GDC samples were subsequently annealed using a 60 W infrared laser at over 2100 °C for 1 h under a thermal gradient equivalent to ~0.3–0.5 °C/μm. The post-annealed samples at 2150 °C for 1 h exhibit grains with average length and width of 37 and 28 μm, respectively. Electron backscattered diffraction (EBSD) analysis revealed that the post-annealed sample at 2150 °C consists of grains oriented close to five principal directions (<4 3 10>, <0 0 1> and <13 1 14> on [0 0 1], and <7 6 20> and <7 2 7> on [0 1 0]) within a tolerance angle of ±10°, whereas the grains of the pre-annealed sample are randomly oriented. Gadolinium diffuses 20–30 μm away from the irradiated surface, with the measured composition of regions deeper than 30 μm, Ce 0.86 Gd 0.14 O 1.93 , is close to that of the pre-annealed sample, Ce 0.87 Gd 0.13 O 1.94 . Enhancement of total conductivity of the post-annealed GDC (1.1 × 10 -3 S cm -1 at 500 °C, and 2.1 × 10 -2 S cm -1 at 700 °C) is observed when compared to the pre-annealed GDC (3.1 × 10 -5 S cm -1 at 500 °C, and 1.7 × 10 -3 S cm -1 at 700 °C), and points to the decrease in the grain boundary (GB) resistivity. This could be attributed to both the change in GB area and grain alignment.

36 MATERIALS SCIENCE↗