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At least 937 records · Page 52

Quantitative linkage between the stress at dislocation channel – Grain boundary interaction sites and irradiation assisted stress corrosion crack initiation

Localized deformation has emerged as a key factor in the crack initiation process for irradiated steels, as cracks are observed to nucleate preferentially at these sites. Using high resolution electron backscatter diffraction (HREBSD), the local stress tensor surrounding the dislocation channel-grain boundary interaction sites was quantified and coupled with fully determined grain boundary plane orientation information to determine, for the first time, the relationship between grain boundary normal stress and intergranular crack initiation in irradiated austenitic stainless steel. A Fe-13Cr-15Ni alloy was strained in simulated boiling water reactor, normal water chemistry after quantifying the residual stress tensor at discontinuous dislocation channel – grain boundary interaction sites where grain boundaries were determined to be well oriented with respect to the loading axis. Local stresses at the grain boundary were observed to reach magnitudes greater than 1.5 GPa at a distance of 200 nm from the intersection between the dislocation channel and the grain boundary. A pseudo-threshold stress of 0.9 GPa was measured, below which no cracking was observed. As the stress acting normal to the grain boundary increased above this value, the susceptibility to cracking increased with the cracking fraction reaching 100% at the high end of the stress range. This study shows for the first time that not only does intersection between discontinuous dislocation channels and grain boundaries result in peak local stresses, while the magnitude of the local tensile stress drives the crack initiation process.

36 MATERIALS SCIENCE↗

Hot deformation behavior and flow stress modeling of a Ni-based superalloy

The deformation behavior of a novel Ni-based superalloy was investigated using isothermal compression on a Gleeble system at temperatures between 1050 and 1210 °C with strain rates between 0.001 and 0.1 s –1 . Flow-stress curves and electron backscatter diffraction maps were employed to experimentally identify the various flow mechanisms operative during deformation. Deformation at temperatures below 1130 °C presented strong work hardening with limited restoration during dynamic softening leading to partially recrystallized microstructures. Increasing the deformation temperature to and above 1130°C enhanced the driving force for dislocation and grain boundary mobility thereby enabling dynamic recovery (DRV) and dynamic recrystallization (DRX) mechanisms to better operate. Here, the influence of the strain rate was more evident during deformation at these temperatures. Increasing the strain rate from 0.001 s –1 to 0.1 s –1 resulted in a transition in dominant softening mechanism from DRV to DRX. Flow stress modeling using the Zener-Hollomon parameter was performed to obtain the activation energy and the constitutive equation for hot deformation of the alloy. Strong changes in flow behavior affected the accuracy of the flow stress model, and thus, the model was used alternatively to identify deformation parameters associated with various flow regimes. In doing so, the activation energy and the other equation constants were obtained for each deformation mechanism observed experimentally.

36 MATERIALS SCIENCE↗

Multiprincipal Component P2-Na 0.6 (Ti 0.2 Mn 0.2 Co 0.2 Ni 0.2 Ru 0.2 )O 2 as a High-Rate Cathode for Sodium-Ion Batteries

Mixing transition metal cations in nearly equiatomic proportions in layered oxide cathode materials is a new strategy for improving the performances of Na-ion batteries. The mixing of cations not only offers entropic stabilization of the crystal structure but also benefits the diffusion of Na ions with tuned diffusion activation energy barriers. In light of this strategy, a high-rate Na 0.6 (Ti 0.2 Mn 0.2 Co 0.2 Ni 0.2 Ru 0.2 )O 2 cathode was designed, synthesized, and investigated, combining graph-based deep learning calculations and complementary experimental characterizations. This new cathode material delivers high discharge capacities of 164 mA g –1 at 0.1 C and 68 mAh g –1 at a very high rate of 86 C, demonstrating an outstanding high rate capability. Ex situ and operando synchrotron X-ray diffraction were used to reveal the detailed structural evolution of the cathode upon cycling. Using the climbing-image nudged elastic-band calculation and Ab initio molecular dynamics simulations, we show that the optimal transition metal composition enables a percolating network of low barrier pathways for fast, macroscopic Na diffusion, resulting in the observed high rate performance.

25 ENERGY STORAGE↗

Setup for meV-resolution inelastic X-ray scattering measurements and X-ray diffraction at the Matter in Extreme Conditions endstation at the Linac Coherent Light Source

Here, we describe a setup for performing inelastic X-ray scattering and X-ray diffraction measurements at the Matter in Extreme Conditions (MEC) endstation of the Linac Coherent Light Source. This technique is capable of performing high-, meV-resolution measurements of dynamic ion features in both crystalline and non-crystalline materials.Afour-bounce silicon (533) monochromatorwas used in conjunction with three silicon (533) diced crystal analyzers to provide an energy resolution of 50meV over a range of 500 meV in single shot measurements. In addition to the instrument resolution function, we demonstrate the measurement of longitudinal acoustic phonon modes in polycrystalline diamond. Furthermore, this setup may be combined with the high intensity laser drivers available at MEC to create warm dense matter and subsequently measure ion acoustic modes.

47 OTHER INSTRUMENTATION↗

Measurement of femtosecond dynamics of ultrafast electron beams through terahertz compression and time-stamping

Visualizing ultrafast dynamics at the atomic scale requires time-resolved characterization with femtosecond temporal resolution. For fully relativistic electron bunch probes, existing techniques for single-shot ultrafast electron diffraction (UED) are limited by the achievable electron probe bunch length, charge, and timing jitter. We present the first experimental demonstration of dual-fed THz-driven compression and time-stamping that enables electron probes with improved temporal resolution. This technique utilizes two counter-propagating quasi-single-cycle THz pulses generated from two OH-1 organic crystals coupled into an optimized THz compressor structure. We demonstrate electron bunch compression and time-of-arrival jitter suppression by a factor of 3 paving the way toward unique opportunities for UED time-resolved measurements.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Oxygen point defect accumulation in single-phase U O 2 + x

UO 2.07 was characterized using neutron total scattering in order to elucidate defect morphology in the low oxygen-to-metal regime (x < 0.125 for UO 2+x ). Data were collected at temperatures (600 and 1000 °C) coinciding with the single-phase UO 2+x region of the established phase diagram, and results were compared with data of stoichiometric UO 2 collected at near-identical temperatures. Experimental data were modeled and interpreted using a holistic approach employing a combination of analyses that characterized multiple spatial length scales. Preferential modeling of long-range atomic arrangements with Rietveld refinement suggests the existence of primarily monointerstitials in UO 2.07 , whereas preferential modeling of short-range atomic structures with small-box pair distribution function (PDF) refinement indicates the presence of defect clusters in UO 2.07 . Simultaneous modeling of multiple length scales using complementary reverse Monte Carlo (RMC) and molecular dynamics (MD) methods confirms that excess oxygen atoms in UO 2.07 exist as small defects, such as monointerstitials and di-interstitials. RMC and MD results agree with diffraction analysis but differ significantly from small-box PDF refinements, which may be related to a lack of intermediate- and long-range structural information gained from the small-box PDF refinement procedure. Employing a combination of analysis methods with varying length-scale sensitivities enabled more accurate assessment of the UO 2+x defect structure. Furthermore, our findings provide experimental support for previously predicted di-interstitial defect morphologies in UO 2+x that highly influence the accurate prediction of bulk physiochemical properties of UO 2+x , such as oxygen diffusivity.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Large dynamic range beam diagnostics and beam dynamics studies for high current electron LINACs

As described in the previous reports we have been working on an apodized optical system for transverse beam profile measurements by means of imaging. The key issues of LDR imaging is properly managing diffraction effects within the optical system, which is proposed to accomplish by means of amplitude apodization. Shortly before the time of the last progress report we have finished manufacturing of several apodizing elements. We have completed mechanical design of our first apodized imaging system and have built its prototype on an optical bench. Since testing diagnostic equipment with beam is costly and is not always possible due to limited beam availability, it has been our intention to make as much preliminary testing and characterization on a test bench in the laboratory.

43 PARTICLE ACCELERATORS↗

In Situ High-Temperature Ultrafast Electron Diffraction through Integrated Furnace and MEMS Platforms

Temperature fundamentally governs phase stability, defect evolution, and transport behavior in materials. Despite its central role, direct measurements of structural evolution at elevated temperatures on ultrafast timescales have remained limited. Here, we report the design, integration, and validation of 2 complementary in situ heating platforms that substantially extend the thermal operating range of ultrafast electron diffraction (UED). A compact furnace-type heating stage enables stable diffraction measurements from room temperature to 800 K with ±0.1 K stability under ultrahigh vacuum, achieved through multi-sensor feedback control, dual air-cooling channels, and a thermally isolated motion stage. In parallel, a microelectromechanical system (MEMS)-based heating platform provides rapid thermal response and access to extreme temperatures ≥1,373 K with ±0.1 K stability over hundreds-micrometer regions while supporting simultaneous electrical biasing for electrothermal coupling studies. Absolute temperature calibration is established using diffraction-based thermometry via aluminum lattice expansion and independently validated through in situ melting of bismuth thin films. UED measurements further reveal pronounced temperature-dependent nonequilibrium lattice dynamics in bismuth, including modifications to electron–phonon coupling and Debye–Waller behavior, as well as enhanced ultrafast diffuse scattering in aluminum at elevated temperatures. Together, these developments establish a practical framework for quantitative, time-resolved studies of temperature-driven kinetics and nonequilibrium structural dynamics under extreme thermal environments.

Bai, Qianqian [Chinese Academy of Sciences (CAS), ↗

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.

14 SOLAR ENERGY↗

Correlation of Tensile Deformation-Induced Strain in HSLA Steel with Residual Stress Distribution

During service, due to the dynamic loading rates encountered, structural components experience varying levels of plastic deformation which leads to changes in the mechanical behavior of materials. The dynamic loading leads to non-homogenous plastic deformation which changes the residual stress distribution. In this study, the magnitude and distribution of residual stress in tensile tested specimens of high-strength low-alloy steel were investigated using x-ray diffraction technique, by varying the deformation rate. Tensile testing was performed at four different strain rates, and residual stress measurement was done along the length of the fractured specimens. Distribution of residual stress was observed all along the length of the specimens which is attributed to the varying levels of plastic deformation. Measured residual stresses are correlated with elastic strain and plastic strain obtained from the tensile tests. Consistent decrease in the magnitude of residual stress with an increase in plastic strain is observed with decreasing strain rate at the necking region. Specimen with lower yield strength experienced higher plastic strains, hence lower elastic residual stresses. The reasons for the observed distribution of residual stress are discussed with XRD peak broadening associated with plastic deformation.

36 MATERIALS SCIENCE↗

Role of Equilibrium Fluctuations in Light-Induced Order

Engineering novel states of matter with light is at the forefront of materials research. An intensely studied direction is to realize broken-symmetry phases that are “hidden” under equilibrium conditions but can be unleashed by an ultrashort laser pulse. Despite a plethora of experimental discoveries, the nature of these orders and how they transiently appear remain unclear. To this end, we investigate a nonequilibrium charge density wave (CDW) in rare-earth tritellurides, which is suppressed in equilibrium but emerges after photoexcitation. Using a pump-pump-probe protocol implemented in ultrafast electron diffraction, we demonstrate that the light-induced CDW consists solely of order parameter fluctuations, which bear striking similarities to critical fluctuations in equilibrium despite differences in the length scale. By calculating the dynamics of CDW fluctuations in a nonperturbative model, we further show that the strength of the light-induced order is governed by the amplitude of equilibrium fluctuations. Overall, these findings highlight photoinduced fluctuations as an important ingredient for the emergence of transient orders out of equilibrium. Our results further suggest that materials with strong fluctuations in equilibrium are promising platforms to host hidden orders after laser excitation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Grain boundary inter-connections in polycrystalline aluminum with random orientation

Highlights: • The GBICs in a pure aluminum are not random, showing remarkable preference on the planes of low Miller index. • {1 1 1}/{1 1 1} is the most frequent GBIC in pure aluminum. • {1 1 1}/{1 1 1} GBIC is mainly coming from the GBs formed by rotations around , and axes. • {1 1 1}/{1 1 1} GBIC possesses higher PCSD and definite dislocation structures compared to the general GBs. • To pursue {1 1 1}/{1 1 1} GBIC is a pint-cut for the GBE research in high stacking fault energy FCC materials. - Abstract: Grain boundary inter-connection (GBIC) is the matching of two crystallographic planes from two abutting grains ending on the grain boundary (GB) position in polycrystalline materials, which can be expressed as {h_1k_1l_1}/{h_2k_2l_2}. GBIC is the critical parameter that intrinsically defines the character and properties of a GB. In current work, a zone-melted polycrystalline aluminum bar with a purity higher than 99.99% (mass fraction) was subjected to a multi-directional forging (MDF) with a true strain of 4 followed by a recrystallization annealing at 360 °C. Such process repeated at least 4 times until an equiaxed-grain microstructure with random orientation and averaged grain size approximate 30 μm was achieved. Then the GBICs were determined by electron backscatter diffraction (EBSD) measurement and stereology-based five-parameter analysis (FPA) coupled with crystallographic analysis after the grain boundaries (GBs) were filtered according to their misorientations (e.g. angle/axis pair). The results revealed that the GBICs for any group of GBs with a given misorientation are not random, showing remarkable preference on the planes of low Miller index forming mixed and twist GBs. The work also demonstrated that among the high angle boundaries (HABs), {1 1 1}/{1 1 1}, including coherent ∑3 boundaries, is the most frequent GBIC, mainly due to the GBs formed by rotations around <1 1 1>, <1 2 2> and <1 1 2> axes. Near coincidence site (NCS) and O-lattice theory analyses indicate that the {1 1 1}/{1 1 1} GBICs usually possess higher planar coincidence site density (PCSD) and definite dislocation structures compared to the general GBs, implying their more structural stability when only crystallography is taken into account. This result agrees very well with the recent results obtained by molecular dynamic simulations. It is significant to the grain boundary engineering (GBE) in the high stacking fault energy (SFE) face-centered cubic (FCC) materials such as aluminum and its alloys.

36 MATERIALS SCIENCE↗

Effects of Strain and Strain Rate on Dynamic Grain Growth and Subgrain Evolution During Plastic Deformation of an Interstitial-Free Steel at 850 ° C

Here, the effects of strain and strain rate on dynamic grain growth (DGG) and subgrain evolution are reported for an interstitial-free steel deformed at 850 ° C. Microstructures produced during tension tests at true-strain rates of 10 -4 and to 10 -3 s -1 true strains ranging from 0.02 to 0.2 were preserved following deformation. These were characterized using electron backscatter diffraction (EBSD), including the application of spherical harmonic transform indexing to produce high-angular-resolution EBSD (HR-EBSD) data. HR-EBSD data resolved the small misorientation angles of subgrain boundaries while imaging much larger data fields than possible with previously available techniques. The resulting data confirmed that steady-state flow stress is inversely proportional to the average subgrain size and that subgrain boundary misorientation angle increases with strain. The following new observations are reported. The rate of DGG increased with respect to time but decreased with respect to strain as strain rate increased. This behavior is rationalized through a simple model using separate rate parameters for the effects of time and strain. Subgrain size was not constant during steady-state deformation, but decreased slowly with increasing strain. Subgrain size distributions and subgrain boundary misorientation angle distributions were measured, and both remained approximately log-normal during steady-state deformation. Subgrain evolution demonstrated no dependence on parent grain size, crystallographic orientation, or Taylor factor. These new data suggest that steady-state flow stress is more likely controlled by the dislocation density internal to subgrains than by the spacing between subgrain boundaries.

dynamic grain growth↗

On the Development of Order and Interfaces during the Growth of Ultrathin La 2 CuO 4 Films by Molecular Beam Epitaxy

While the atomic structure of interfaces in complex oxide heterostructures created by epitaxial growth has been investigated extensively, few studies have been conducted on how interfaces form and restructure at the initial stage of film growth. The dynamic aspects of the growth behavior can strongly influence the final interfacial atomic structure, which may lead to the emergence of interface-specific properties, such as the rise of interfacial superconductivity between certain Ruddlesden-Popper oxide materials. In this report, the structural development of La2CuO 4 thin films grown by molecular beam epitaxy on a LaSrAlO 4 substrate is investigated by X-ray diffraction measurements with rapid scans over a volume of reciprocal space. This method provides far more detailed information on interface formation than traditional fixed-point measurements. The results show that the atomic structure of the interface becomes fully established after just a single unit cell of growth. Interestingly, restructuring continues to occur within the topmost half to one unit cell of the film during the deposition process. However, diffraction intensity oscillations from both reflection high-energy electron and X-ray measurements stabilize only after the growth of two unit cells, indicating that the growth front morphology continues to evolve until the start of the third unit cell. This multimodal investigation provides insights into the atomic processes taking place during layered oxide interface formation, including the dynamical rearrangement of LaO and CuO 2 layers. Such information is not only relevant to the engineering and optimization of functional layer structures but can also be critical for ultrathin films.

36 MATERIALS SCIENCE↗

Spatially resolved phase transformation mapping in 410 stainless steel during additive manufacturing visualized via real-time infrared data

Here, in this study, we demonstrate that spatially resolved cooling curves derived from real-time infrared (IR) thermography during additive manufacturing (AM) can capture spatial variations in phase transformation temperatures through cooling curve analysis (CCA). Using this approach, we show that during laser hot-wire deposition of 410 stainless steel (410SS), the martensite start temperature (M s ) evolves dynamically throughout the build. The M s temperature is spatially nonuniform, ranging from 185 °C to 348 °C, with the lowest values toward the build center and higher values toward the upper region of the deposit. In the lower portion of the build, no M s inflection is detected via CCA, consistent with transformation occurring earlier during thermal cycling followed by tempering during subsequent thermal cycles. These trends in M s are corroborated by characterizing the microstructure by electron backscatter diffraction (EBSD). Traditionally, M s is assumed to be constant, and a single interpass temperature is applied during both deposition and residual stress modeling. Our results demonstrate that IR-derived cooling curves provide a route to spatially and temporally resolved transformation temperature tracking for dynamic interpass control and improved residual-stress modeling.

Additive manufacturing↗

Microscopic changes governing melting anisotropy: Real-time nanosecond x-ray diffraction

To understand the microscopic origins governing melting anisotropy, in-situ x-ray diffraction (XRD) measurements were obtained in aluminum single crystals shocked along $\langle$100$\rangle$ and $\langle$110$\rangle$ to stresses below and above the melting threshold for each orientation. XRD results and analysis for the two orientations showed significant differences in the microstructure prior to the melting threshold stresses, demonstrating the key role of deformation induced microstructure – in addition to temperature and pressure – on the melting transition. As a result, our findings make a strong case for reconsidering theoretical approaches to melting, specifically for dislocation mediated melting, in shock compressed solids.

crystal melting↗

Influence of defects on the femtosecond laser damage resistance of multilayer dielectric gratings

Multilayer dielectric (MLD) gratings with high diffraction efficiency and a high laser-induced damage (LID) threshold for pulse compressors are key to scaling the peak and average power of chirped pulse amplification lasers. However, surface defects introduced by manufacturing, storage, and handling processes can reduce the LID resistance of MLD gratings and impact the laser output. The underlying mechanisms of such defect-initiated LID remain unclear, especially in the femtosecond regime. In this Letter, we model dynamic processes in interactions of a 20-fs near-infrared (NIR) laser pulse and a MLD grating design in the presence of cylindrically symmetrical nodules and particle contaminants and cracks at the surface. Utilizing a dynamic model based on a 2D finite difference in time domain (FDTD) field solver coupled with photoionization, electron collision, and refractive index modification, we study the simulation results for the damage site distribution initiated by defects of various types and sizes and its impact on the LID threshold of the grating design.

Zhang, Simin (ORCID:0000000174948230)↗