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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Modeling self-subtraction in angular differential imaging: Application to the HD 32297 debris disk

We present a new technique for forward-modeling self-subtraction of spatially extended emission in observations processed with angular differential imaging (ADI) algorithms. High-contrast direct imaging of circumstellar disks is limited by quasi-static speckle noise, and ADI is commonly used to suppress those speckles. However, the application of ADI can result in self-subtraction of the disk signal due to the disk's finite spatial extent. This signal attenuation varies with radial separation and biases measurements of the disk's surface brightness, thereby compromising inferences regarding the physical processes responsible for the dust distribution. To compensate for this attenuation, we forward model the disk structure and compute the form of the self-subtraction function at each separation. As a proof of concept, we apply our method to 1.6 and 2.2 μm Keck adaptive optics NIRC2 scattered-light observations of the HD 32297 debris disk reduced using a variant of the 'locally optimized combination of images' algorithm. We are able to recover disk surface brightness that was otherwise lost to self-subtraction and produce simplified models of the brightness distribution as it appears with and without self-subtraction. From the latter models, we extract radial profiles for the disk's brightness, width, midplane position, and color that are unbiased by self-subtraction. Our analysis of these measurements indicates a break in the brightness profile power law at r ≈ 110 AU and a disk width that increases with separation from the star. We also verify disk curvature that displaces the midplane by up to 30 AU toward the northwest relative to a straight fiducial midplane.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2011

Hydrogenation and surface density changes in hydrocarbon films during erosion using Ar/H{sub 2} plasmas

We report interactions of low pressure Ar, H{sub 2}, and Ar/H{sub 2} mixture plasmas with a-C:H films. Surface evolution and erosion of a-C:H films were examined for ion energies up to 200 eV by rf biasing the substrates. Film surfaces were characterized using in situ ellipsometry, x-ray photoelectron spectroscopy, and atomic force microscopy. Multilayer models for steady-state modified surface layers are constructed using ellipsometric data and compared with results of molecular dynamics (MD) simulations and transport of ions in matter (TRIM) calculations. We find that Ar plasma causes a modified layer at the surface that is depleted of H atoms. The depth and degree of this modification is strongly depending on Ar ion energies. This depletion saturates quickly during plasma exposure (<1 s) and persists during steady-state erosion. We find that the thickness and density of the H-depleted layer are in good agreement with MD and TRIM simulations. The degree of surface densification decreases when small amounts of H{sub 2} are added to Ar plasmas. When more than 5% H{sub 2} is added to the plasma, long term loss in surface density is observed, indicating rehydrogenation and saturation of H in the film. As the H{sub 2} fraction increases, the near-surface atomic H increases and the ion composition bombarding the surface changes. This causes incorporation of H deeper into the a-C:H film. For a-C:H films exposed to pure H{sub 2} plasmas, H is introduced into the near-surface region to a depth of up to {approx}8 nm from the surface. As the rf bias is increased the ion energy transitions from solely chemical sputtering to one involving physical sputtering, causing the yield of C atoms from the surface to greatly increase. The increasing yield suppresses H incorporation/saturation and decreases the magnitude of the modified surface layer.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Quantum dynamics of a molecular emitter strongly coupled with surface plasmon polaritons: A macroscopic quantum electrodynamics approach

In this work, we study a molecular emitter above a silver surface in the framework of macroscopic quantum electrodynamics and explore the population dynamics including non-Markovian effects. The theory we present is general for molecular fluorescence in the presence of dielectrics with any space-dependent, frequency-dependent, or complex dielectric functions. Furthermore, the proposed theory allows us to calculate the memory kernel of polaritons using computational electrodynamics packages. In the limit of a high vibration frequency, the different strengths of exciton-polariton couplings lead to distinct characteristics in the population dynamics, e.g., Franck-Condon-Rabi oscillation. (The frequency of Rabi oscillation is dependent on the Franck-Condon factor.) Additionally, in a specific condition, we derive a parameter-free formula that can be used to estimate the exciton-polariton coupling between a molecular emitter and a nanocavity, and the coupling estimated by our theory is in good agreement with the reported experimental results.

Surface plasmon polaritons↗
DOE OSTI2013

AUTOMATED UNSUPERVISED CLASSIFICATION OF THE SLOAN DIGITAL SKY SURVEY STELLAR SPECTRA USING k-MEANS CLUSTERING

Large spectroscopic surveys require automated methods of analysis. This paper explores the use of k-means clustering as a tool for automated unsupervised classification of massive stellar spectral catalogs. The classification criteria are defined by the data and the algorithm, with no prior physical framework. We work with a representative set of stellar spectra associated with the Sloan Digital Sky Survey (SDSS) SEGUE and SEGUE-2 programs, which consists of 173,390 spectra from 3800 to 9200 A sampled on 3849 wavelengths. We classify the original spectra as well as the spectra with the continuum removed. The second set only contains spectral lines, and it is less dependent on uncertainties of the flux calibration. The classification of the spectra with continuum renders 16 major classes. Roughly speaking, stars are split according to their colors, with enough finesse to distinguish dwarfs from giants of the same effective temperature, but with difficulties to separate stars with different metallicities. There are classes corresponding to particular MK types, intrinsically blue stars, dust-reddened, stellar systems, and also classes collecting faulty spectra. Overall, there is no one-to-one correspondence between the classes we derive and the MK types. The classification of spectra without continuum renders 13 classes, the color separation is not so sharp, but it distinguishes stars of the same effective temperature and different metallicities. Some classes thus obtained present a fairly small range of physical parameters (200 K in effective temperature, 0.25 dex in surface gravity, and 0.35 dex in metallicity), so that the classification can be used to estimate the main physical parameters of some stars at a minimum computational cost. We also analyze the outliers of the classification. Most of them turn out to be failures of the reduction pipeline, but there are also high redshift QSOs, multiple stellar systems, dust-reddened stars, galaxies, and, finally, odd spectra whose nature we have not deciphered. The template spectra representative of the classes are publicly available in the online journal.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2018

Multiphysics modeling of mesh piezoelectric atomizers

An ultrasonic clothes dryer was developed by researchers at Oak Ridge National Laboratory based on a novel approach of using high-frequency mechanical vibration instead of heat to extract moisture as a cold mist. This technology is based on direct mechanical coupling between mesh piezoelectric (PZT) transducers and wet fabric. The vibration introduces sufficient momentum to the droplets trapped in the fabric pores to atomize them and leave the garment in a cold state. In the vibrating transducer, deformation followed by the effects of boundary layer acoustic streaming results in ejection of the atomized droplets. The research presented bridges the vibration of a PZT mesh transducer to the induced acoustic field and to capillary-wave theory. Mathematical modeling studies free and forced vibrations of a mesh-like PZT structure, using the structural parameters identified by actuation testing in several case studies. Computational fluid–structure interaction modeling is performed to couple the vibrations of a PZT transducer with an in-contact droplet. The results obtained are used to investigate (1) the transverse deformation of the vibrating mesh transducer in contact with a droplet, (2) the resultant boundary layer acoustic streaming in the fluid surrounding the vibrating surface, and (3) the droplet deformation and fluid ejection. The physics of atomization are linked to the level of the near-wall droplet vibrations induced by the surface deformation of the transducer. Then the surface deformation is linked to the properties of the PZT mesh transducer and input actuation frequency and power.

Dupuis, Eric↗
DOE OSTI2016

Low pressure hand made PVD system for high crystalline metal thin film preparation in micro-nanometer scale

High crystalline metal thin film preparation in application both for catalyst substrate or electrode in any electronic devices always to be considered in material functional material research and development. As a substrate catalyst, this metal take a role as guidance for material growth in order to resulted in proper surface structure although at the end it will be removed via etching process. Meanwhile as electrodes, it will dragging charges to be collected inside. This brief discussion will elaborate general fundamental principle of physical vapor deposition (PVD) system for metal thin film preparation in micro-nanometer scale. The influence of thermodynamic parameters and metal characteristic such as melting point and particle size will be elucidated. Physical description of deposition process in the chamber can be simplified by schematic evaporation phenomena which is supported by experimental measurement such as SEM and XRD.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi2Se2Te crystals. Angle-resolved photoemission spectroscopy measurements on cleaved Bi2Se2Te crystals show a well-defined linear dispersion without intersection of the conduction band. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherent length shows a power-law dependence with temperature (lw,T20.44), indicating the presence of the surface states. More importantly, the analysis of a Landau-level fan diagram of Shubnikov-de Hass oscillations yields a finite Berry phase of ,0.42p, suggesting the Dirac nature of the surface states. Our results demonstrate that Bi2Se2Te can serve as a suitable topological insulator candidate for achieving intrinsic quantum transport of surface Dirac fermions.

42 ENGINEERING↗
DOE OSTI2014

Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of the PL intensity, peak position, and line width with temperature and excitation source, the existence of free and bound excitonic recombination together with e{sub 1} → hh{sub 1} transitions in the QDs is established.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fluorocarbon assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

The authors demonstrate atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. C{sub 4}F{sub 8} injection enables control of the deposited fluorocarbon (FC) layer thickness in the one to several Ångstrom range and chemical modification of the SiO{sub 2} surface. For low energy Ar{sup +} ion bombardment conditions, the physical sputter rate of SiO{sub 2} vanishes, whereas SiO{sub 2} can be etched when FC reactants are present at the surface. The authors have measured for the first time the temporal variation of the chemically enhanced etch rate of SiO{sub 2} for Ar{sup +} ion energies below 30 eV as a function of fluorocarbon surface coverage. This approach enables controlled removal of Ångstrom-thick SiO{sub 2} layers. Our results demonstrate that development of atomic layer etching processes even for complex materials is feasible.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Microsecond Electron Beam Source with Electron Energy Up to 400 Kev and Plasma Anode

A new high-power source of electrons with plasma anode for producing high-current microsecond electron beams with electron energy up to 400 keV has been developed, manufactured, and put in operation. To increase the cross section and pulse current duration of the beam, a multipoint explosive emission cathode is used in the electron beam source, and the beam is formed in an applied external guiding magnetic field. The Marx generator with vacuum insulation is used as a high-voltage source. Electron beams with electron energy up to 300–400 keV, current of 5–15 kA, duration of 1.5–3 μs, energy up to 4 kJ, and cross section up to 150 cm{sup 2} have been produced. The operating modes of the electron beam source are realized in which the applied voltage is influenced weakly on the current. The possibility of source application for melting of metal surfaces is demonstrated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2011

On the theory of polarization radiation in media with sharp boundaries

Polarization radiation generated when a point charge moves uniformly along a straight line in vacuum in the vicinity of media with a finite permittivity {epsilon}({omega}) = {epsilon} Prime + i{epsilon} Double-Prime and sharp boundaries is considered. A method is developed in which polarization radiation is represented as the field of the current induced in the substance by the field of the moving charge. The solution to the problem of radiation induced when a charge moves along the axis of a cylindrical vacuum channel in a thin screen with a finite radius and a finite permittivity is obtained. Depending on the parameters of the problem, this solution describes various types of radiation (Cherenkov, transition, and diffraction radiation). In particular, when the channel radius tends to zero and the outer radius of the screen tends to infinity, the expression derived for the emitted energy coincides with the known solution for transition radiation in a plate. In another particular case of ideal conductivity ({epsilon} Double-Prime {yields} {infinity}), the relevant formula coincides with the known results for diffraction radiation from a circular aperture in an infinitely thin screen. The solution is obtained to the problem of radiation generated when the charge flies near a thin rectangular screen with a finite permittivity. This solution describes the diffraction and Cherenkov mechanisms of radiation and takes into account possible multiple re-reflections of radiation in the screen. The solution to the problem of radiation generated when a particles flies near a thin grating consisting of a finite number of strips having a rectangular cross section and a finite permittivity and separated by vacuum gaps (Smith-Purcell radiation) is also obtained. In the special case of ideal conductivity, the expression derived for the emitted energy coincides with the known result in the model of surface currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Effect of metallic surface microroughness on the probability and spectrum of plasmon excitation by a fast charged particle moving parallel to the surface

The Green's function of the electric field of plasmons is determined in a semi-infinite medium with an abrupt plasma boundary where nonequilibrium conduction electrons either undergo elastic reflection from the boundary or 'stick' to it and give rise to a stationary surface charge. The angular reflection of elastically scattered electrons can be either specular or diffuse. The Green's function is used to find the singleevent spectrum of energy loss by a fast electron moving parallel to the boundary. The effect of electronboundary scattering parameters on the structure of bulk and surface plasmon resonances is analyzed. The probability of transition radiation of bulk plasmon by an electron moving in vacuum is examined. A new type of surface resonance is found under conditions of perfectly elastic scattering of conduction electrons from the plasma boundary, similar in structure to a tangential surface plasmon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Functional form for plasma velocity in a rapidly rotating tokamak discharge

A recently developed technique using charge exchange spectroscopy determines the ion poloidal rotation in tokamak plasmas from the poloidal variation in the toroidal angular rotation speed. The basis for this technique is the functional form for the plasma velocity calculated from the equilibrium equations. The initial development of this technique utilized the functional form determined for conditions where the ion toroidal rotation speed is much smaller than the ion thermal speed. There are cases, however, where the toroidal rotation can be comparable to the ion thermal speed, especially for high atomic number impurities. The present paper extends the previous analysis to this high rotation speed case and demonstrates how to extract the poloidal rotation speed from measurements of the toroidal angular rotation speed at two points on a flux surface.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Methods for Measuring and Computing the Reference Temperature in Newton’s Law of Cooling for External Flows

Newton’s law of cooling requires a reference temperature (𝑇 𝑟𝑒𝑓 ) to define the heat-transfer coefficient (ℎ). For external flows with multiple temperatures in the freestream, obtaining 𝑇 𝑟𝑒𝑓 is a challenge. One widely used method, referred to as the adiabatic-wall (AW) method, obtains 𝑇 𝑟𝑒𝑓 by requiring the surface of the solid exposed to convective heat transfer to be adiabatic. Another widely used method, referred to as the linear-extrapolation (LE) method, obtains 𝑇 𝑟𝑒𝑓 by measuring/computing the heat flux ($𝑞^{′′}_𝑠$) on the solid surface at two different surface temperatures (𝑇 𝑠 ) and then linearly extrapolating to $𝑞^{′′}_𝑠$ = 0. A third recently developed method, referred to as the state-space (SS) method, obtains 𝑇 𝑟𝑒𝑓 by probing the temperature space between the highest and lowest in the flow to account for the effects of 𝑇 𝑠 or $𝑞^{′′}_𝑠$ on 𝑇 𝑟𝑒𝑓 . This study examines the foundation and accuracy of these methods via a test problem involving film cooling of a flat plate where $𝑞^{′′}_𝑠$ switches signs on the plate’s surface. Results obtained show that only the SS method could guarantee a unique and physically meaningful 𝑇 𝑟𝑒𝑓 where 𝑇 𝑠 =𝑇 𝑟𝑒𝑓 on a nonadiabatic surface $𝑞^{′′}_𝑠$ = 0. The AW and LE methods both assume 𝑇 𝑟𝑒𝑓 to be independent of 𝑇 𝑠 , which the SS method shows to be incorrect. Though this study also showed the adiabatic-wall temperature, 𝑇 𝐴𝑊 , to be a good approximation of 𝑇 𝑟𝑒𝑓 (<10% relative error), huge errors can occur in ℎ about the solid surface where |𝑇 𝑠 −𝑇 𝐴𝑊 | is near zero because where 𝑇 𝑠 =𝑇 𝐴𝑊 , $𝑞^{′′}_𝑠$ ≠ 0.

Newton's law of cooling↗
DOE OSTI2022

ARPA-E PNDIODES "PN Junctions by Ion Implantation" Project (Final Report)

Electricity accounts for nearly 40% of the energy generated in the United States, of which 65% is lost to electrical system inefficiency before reaching end-use sectors. Power electronics will play a growing role in this distribution and end-use, with up to 80% of electricity estimated to pass through power electronics from generation to consumption by 2030. This gives technical improvements in power electronics enormous potential to drive efficiency gains throughout the U.S. economy. Current Si-based power architectures including MOSFETs and IGBTs are limited by high losses, low switching frequency, and poor high-temperature performance. Given the material properties of GaN, devices can exhibit a given turn-on resistance and breakdown voltage with a minute fraction of the area of a Si device—all with higher switching speeds. While n-type doping of III-nitrides has reached a high level of maturity and integration into commercialized products, p-type doping presents distinct challenges that requires continued research. The success of the next generation of GaN-based power devices depends in large part on the ability to form selective-area p-type regions, which can be accomplished by ion implantation of the prevailing acceptor dopant, Mg. This approach is relatively inexpensive and is a fab-ready processing step for creation of current-generation power electronic devices including BJTs, IGBTs, and diode rectifiers. However, ion implantation induces lattice damage and creates point defects within the material, which negatively impacts dopant activation annealing. These forms of damage may be removed by high-temperature annealing, however short annealing time and higher pressures are required to prevent decomposition of the material. We approach this challenge through an innovative combination of approaches toward obtaining high-conductivity p-type GaN. By the novel employment of a gyrotron, a microwave source that can be shaped into a highly localized beam to dissipate very high power in a semiconductor target, a wafer of GaN can be annealed in short (<2 s) ‘pulses’ at temperatures of 1450 °C (2640 °F) to achieve p-type activation without appreciable surface degradation. The p-type activation of Mg-implanted GaN can be further aided by co-implantation with N, believed to enhance the removal of point defects that compensate the acceptors dopant. Elevation to such high temperatures for even a short time induces degradation of GaN-to overcome, we have implemented additional measures to retain high-quality crystalline GaN while removing implant damage and activating Mg dopant. A bilayer cap of AlN is deposited by a combination of chemical and physical vapor deposition to protect the GaN surface. To prevent decomposition of GaN loss of N during annealing, a custom vessel—to contain pressurized N while allowing injection of microwave energy—is employed. By detailed study of the interaction of various measures that are implemented to protect the sample surface (GaN), activate the implanted dopants, and mitigate damage of the lattice heating damage during annealing, we are able to achieve p-type GaN and observe recovery of the crystal and removal of substantial density of defects created during the implantation process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2014

Electrically tunable graded index planar lens based on graphene

The realization of electrically tunable beam focusing using a properly designed conductivity pattern along a strip on a background single graphene flake with operation in the terahertz regime is proposed and numerically investigated. The strip is illuminated with a guided surface plasmon polaritons (SPP) plane wave and the physical origin of the design procedure is evaluated from the phase of effective mode index of propagating SPP wave on graphene. Upon tuning a gate voltage between the graphene sheet and the substrate, the focus tuning is achieved. Finite- difference time-domain numerical technique is employed to explore the propagation characteristic of SPP wave and the performance parameters of the lens include the focal length, full-width half-maximum, and focusing efficiency. Such a one atom thick planar lens with the capability of electrical focus tuning besides the compatibility with current planar optoelectronic systems can find valuable potential applications in the field of transformational plasmon optics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Precipitation Meteorological Instruments (PRECIPMET) Handbook

The PRECIPMET surface meteorology instrument system provides temperature, relative humidity, pressure, wind speed and direction, and precipitation data relevant to the precipitation network instruments: laser disdrometer (PARS2) and radar wind profiler (RWP). The PRECIPMET is installed at the intermediate facilities (IF) of the U.S. Department of Energy (DOE)’s Atmospheric Radiation Measurement (ARM) Southern Great Plains (SGP) atmospheric observatory. The instrument system consists of a Vaisala WXT520 weather transmitter and a 12”-diameter Novalynx tipping bucket rain gauge (TBRG). The WXT520 is mounted on top of the control building at a height of approximately 4 meters. The tipping bucket is mounted on a pole level with the surrounding fencing (approximately 2 meters) to prevent physical interference with the gauge.

54 ENVIRONMENTAL SCIENCES↗