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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53

Single-cell, whole-embryo phenotyping of mammalian developmental disorders

Mouse models are a critical tool for studying human diseases, particularly developmental disorders. However, conventional approaches for phenotyping may fail to detect subtle defects throughout the developing mouse. Here we set out to establish single-cell RNA sequencing of the whole embryo as a scalable platform for the systematic phenotyping of mouse genetic models. We applied combinatorial indexing-based single-cell RNA sequencing to profile 101 embryos of 22 mutant and 4 wild-type genotypes at embryonic day 13.5, altogether profiling more than 1.6 million nuclei. The 22 mutants represent a range of anticipated phenotypic severities, from established multisystem disorders to deletions of individual regulatory regions. We developed and applied several analytical frameworks for detecting differences in composition and/or gene expression across 52 cell types or trajectories. Some mutants exhibit changes in dozens of trajectories whereas others exhibit changes in only a few cell types. We also identify differences between widely used wild-type strains, compare phenotyping of gain- versus loss-of-function mutants and characterize deletions of topological associating domain boundaries. Notably, some changes are shared among mutants, suggesting that developmental pleiotropy might be ‘decomposable’ through further scaling of this approach. Overall, our findings show how single-cell profiling of whole embryos can enable the systematic molecular and cellular phenotypic characterization of mouse mutants with unprecedented breadth and resolution.

60 APPLIED LIFE SCIENCES↗

Deconstructing dynamics of symmetry breaking

The Kibble–Zurek mechanism (KZM) successfully predicts the density of topological defects deposited by the phase transitions, but it is not clear why. Its key conjecture is that, near the critical point of the second-order phase transition, critical slowing down will result in a period when the system is too sluggish to follow the potential that is changing faster than its reaction time. The correlation length at the freeze-out instant $\hat{t}$ when the order parameter catches up with the posttransition broken symmetry configuration is then decisive, determining when the mosaic of broken symmetry domains locks in topological defects. To understand why the KZM works so well, we analyze the Landau–Ginzburg model and show why temporal evolution of the order parameter plays such a key role. In conclusion, the analytical solutions we obtain suggest experimentally accessible observables that can shed light on symmetry-breaking dynamics while testing the conjecture on which the KZM is based.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Impact of amorphous pockets on displacement damage evolution in silicon

Silicon has long been known to exhibit amorphization in response to heavy particle bombardment. For doses below the total amorphization threshold, partial amorphization is observed in the form of scattered amorphous pockets. While extensive research has gone into modeling the formation and evolution of amorphous pockets in response to irradiation, no studies yet investigate their impact on the evolution of other damage such as interstitial supersaturation and clustering. In this study, we survey the impact of amorphous pockets on defect evolution in silicon when treated as static sinks. MD is first used to show that amorphous pockets provide energetically favorable sites for point defects relative to the crystalline bulk, supporting the hypothesis that they act as sinks. A 0-D cluster dynamics model is then constructed, taking an interstitial clustering model from the literature and including amorphous pockets as a sink species. We conduct our survey for temperatures between 30 and 400 °C and sink strengths between 1 to 6 x 10 10 cm −2 . Both implantation- and radiation-induced damage states are investigated using interstitial and vacancy concentrations as initial condition variables. We find that, due to the differing migration rates of the interstitial and the vacancy, amorphous pockets have a non-monotonic impact on the final damage state depending on the effective sink strength of the amorphous pockets, resulting in increased damage formation in regimes of intermediate amorphization. In conclusion, this result emphasizes the important role of amorphous pockets in governing the evolution of damage in partially amorphized crystalline materials.

36 MATERIALS SCIENCE↗

Interface morphology and dislocation-mediated processes during rapid solidification of thin films

Rapid solidification experiments have, in recent years, revealed a wealth of new microstructural phenomena that suggest a strong connection between the kinetics of solidification and the crystalline structures that emerge as a result. In this work, we investigate the interplay between interface morphology and defect-mediated processes during rapid solidification conditions using a Phase Field Crystal (PFC) model, enabling us to simultaneously and efficiently explore the physics of solidification and elasto-plasticity in the formalism of a single-field theory. We predict that there are two mechanisms by which dislocations emitted directly from the solid–liquid interface induce orientation gradients as well as the formation of subgrain boundaries within a single solidifying cell. We relate these mechanisms to the morphology of the moving solid–liquid interface and identify a suitable control parameter in the PFC model with which we can go between said morphologies by effectively changing the relative strength of the capillary length and kinetic coefficients of the solid–liquid interface. Thus, we are able to provide mechanistic explanations for several microstructural features (with an emphasis on orientation gradients and subgrain boundaries) observed during the rapid solidification of pure materials. We also provide a simple explanation for the formation of “jagged” subgrain boundaries, which is consistent with our experimental observations in rapidly solidified samples of Aluminum, whose mechanisms have thus far been unknown.

Interface morphology↗

Microstructural dependence of defect formation in iron-oxide thin films

In this report passivating iron-oxide films are grown atop iron films simulating the corrosion process in a nuclear reactor environment. Two oxide films grown via physical vapor deposition at 600 °C and room temperature exhibited dense-epitactic and columnar-polycrystalline, microstructures respectively. A third oxide film grown in open air at 600 °C exhibited an eqiuaxed, porous morphology. Cubic maghemite and magnetite phases in each oxide film were identified via grazing incidence X-ray diffraction. Positron annihilation spectroscopy was used to characterize point defects and measure their depth and size distributions in each oxide layer and showed a range of average positron lifetimes from 0.23 ns in the high temperature, vapor deposited film, 0.35 ns in the room temperature-grown film, and 0.31 ns in the thermally grown oxide. These data indicate that the film morphology, which varies greatly in these films, leads to very different defect content. Finally, four-dimensional scanning transmission electron microscopy was used to measure the internal stress of each film and was correlated to the strain state presented in the X-ray diffraction spectra. The defect formation in each film is reasoned through using a thin film growth model.

36 MATERIALS SCIENCE↗

Controlling ZnSe/GaAs interface properties: The role of elemental exposure and photon irradiation during growth initiation

Incorporating dissimilar semiconductors into a single platform can offer additional degrees of freedom for optoelectronic device design. However, bonding of elements with mixed valence at heterovalent interfaces often leads to defect formation and poor material quality. In this work, using ZnSe/GaAs as a model system, we investigate the use of above-bandgap photon irradiation in combination with elemental surface treatments as a route to modify the interface properties. We find that this approach produces large changes in the behavior of the interfaces. Specifically, treating the GaAs surface with light and a short exposure to Se flux results in strong excitonic emission from both layers and an abrupt interface between them. We propose that these improvements arise from controlled desorption of As atoms from the GaAs surface and the subsequent Se enrichment of the interface. In conclusion, these results suggest that illumination with above-bandgap photons and proper choice of elemental exposure prior to heterovalent epitaxial layer growth may aid the synthesis of heterovalent semiconductor heterostructures.

36 MATERIALS SCIENCE↗

Metal sensing and regulation of adaptive responses to manganese limitation by MtsR is critical for group A streptococcus virulence

Abstract Pathogenic bacteria encounter host-imposed manganese (Mn) limitation during infection. Herein we report that in the human pathogen Streptococcus pyogenes, the adaptive response to Mn limitation is controlled by a DtxR family metalloregulator, MtsR. Genes upregulated by MtsR during Mn limitation include Mn (mtsABC) and Fe acquisition systems (sia operon), and a metal-independent DNA synthesis enzyme (nrdFEI.2). To elucidate the mechanism of metal sensing and gene regulation by MtsR, we determined the crystal structure of MtsR. MtsR employs two Mn-sensing sites to monitor metal availability, and metal occupancy at each site influences MtsR regulatory activity. The site 1 acts as the primary Mn sensing site, and loss of metal at site 1 causes robust upregulation of mtsABC. The vacant site 2 causes partial induction of mtsABC, indicating that site 2 functions as secondary Mn sensing site. Furthermore, we show that the C-terminal FeoA domains of adjacent dimers participate in the oligomerization of MtsR on DNA, and multimerization is critical for MtsR regulatory activity. Finally, the mtsR mutant strains defective in metal sensing and oligomerization are attenuated for virulence in a mouse model of invasive infection, indicating that Mn sensing and gene regulation by MtsR are critical processes during S. pyogenes infection.

59 BASIC BIOLOGICAL SCIENCES↗

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

This study reports the electronic properties of the indium tin oxide (ITO)/β-Ga2O3 Schottky diode through the temperature (50–320 K)-dependent current density–voltage, capacitance–voltage, and admittance spectroscopy experiments. The room-temperature turn-on voltage of the ITO/β-Ga2O3 diode was observed to be 0.83 V, and it exhibited a slow increase with decreasing temperature. The ITO/β-Ga2O3 diode's ideality factor (n) varied from 3.92 to 1.05, and the zero-bias Schottky barrier height (φbo) varied from 0.31 to 1.28 eV. The temperature-dependent n and φbo indicate the spatial inhomogeneities of the potential barrier at the Ga2O3-ITO interface. We exploit the Gaussian distribution model to explain the Schottky barrier inhomogeneities, which could be associated with the defects observed by the admittance spectroscopy method.

Engineering↗

Fine-tuning of mTOR signaling by the UBE4B-KLHL22 E3 ubiquitin ligase cascade in brain development

ABSTRACT Spatiotemporal regulation of the mechanistic target of rapamycin (mTOR) pathway is pivotal for establishment of brain architecture. Dysregulation of mTOR signaling is associated with a variety of neurodevelopmental disorders. Here, we demonstrate that the UBE4B-KLHL22 E3 ubiquitin ligase cascade regulates mTOR activity in neurodevelopment. In a mouse model with UBE4B conditionally deleted in the nervous system, animals display severe growth defects, spontaneous seizures and premature death. Loss of UBE4B in the brains of mutant mice results in depletion of neural precursor cells and impairment of neurogenesis. Mechanistically, UBE4B polyubiquitylates and degrades KLHL22, an E3 ligase previously shown to degrade the GATOR1 component DEPDC5. Deletion of UBE4B causes upregulation of KLHL22 and hyperactivation of mTOR, leading to defective proliferation and differentiation of neural precursor cells. Suppression of KLHL22 expression reverses the elevated activity of mTOR caused by acute local deletion of UBE4B. Prenatal treatment with the mTOR inhibitor rapamycin rescues neurogenesis defects in Ube4b mutant mice. Taken together, these findings demonstrate that UBE4B and KLHL22 are essential for maintenance and differentiation of the precursor pool through fine-tuning of mTOR activity.

Kong, Xiangxing↗

Study program of NASA/GSFC weld quality monitor system

The Weld Quality Monitor has provided online control through the application of linear transducers. The electronic systems must be upgraded to increase confidence level required in production. The Weld Quality Monitor has been used with a recent model solid state power supply to evaluate ability to differentiate between sound and defective weld joints. The Weld Quality Monitor has been evaluated on Dumet and Kovar to interconnect materials Nickel and Alloy 180 in weld joints used on microelectronic module fabrication. Distinct separation was achieved between low strength welds and sound welds by the Quality Monitor. Evaluation performed indicates a drift level at less than 2 percent on a series of 50 consecutive welds. Operation under shop conditions identified need for controlled electrode impact. This was achieved with pneumatic actuation.

Hutchinson, W. R.↗

Study of interaction among silicon, lithium, oxygen and radiation-induced defects for radiation-hardened solar cells

In order to improve reliability and the useful lifetime of solar cell arrays for space use, a program was undertaken to develop radiation-hardened lithium-doped silicon solar cells. These cells were shown to be significantly more resistant to degradation by ionized particles than the presently used n-p nonlithium-doped silicon solar cells. The results of various analyses performed to develop a more complete understanding of the physics of the interaction among lithium, silicon, oxygen, and radiation-induced defects are presented. A discussion is given of those portions of the previous model of radiation damage annealing which were found to be in error and those portions which were upheld by these extensive investigations.

Berman, P. A.↗

Composite structure dynamics and space applicability

Guided wave modes in cladded or uncladded fiber-reinforced composite plates and tubes have been analyzed using a stiffness method in which the displacement variation through the thickness is approximated by polynomial interpolation functions. This allows for an arbitrary number of laminations and fiber orientations different from lamina to lamina. It is shown that dispersive behavior of guided modes depends significantly on the cladding, number of laminae, and interfaces between the adjacent laminae. A hybrid modeling technique is described in which an inner region containing cracks (or other defects) is discretized by finite elements, and the field in the exterior region is represented in terms of modes that are found using the stiffness method described above. It is found that the reflected and transmitted amplitudes of modes vary significantly with the size of a transverse or longitudinal (delamination) crack and frequency. We have also studied the impact response of a unidirectional fiber-reinforced plate. Received signals at the epicentral and other locations are shown. Strong longitudinal anisotropy of the graphite/epoxy plate causes the signal to be considerably different from that in an isotropic plate.

Datta, Subhendu K.↗

A detailed study of the photo-injection annealing of thermally diffused InP solar cells

A detailed analysis of the annealing of thermally diffused InP solar cells fabricated by the Nippon Mining Co. is presented. The cells were irradiated with 1 MeV electrons, and the induced degradation is measured using deep level transient spectroscopy and low temperature (86 K) IV measurements. Clear recovery of the photovoltaic parameters is observed during low temperature (T is less than 300 K) solar illuminations (1 sun, AMO) with further recovery at higher temperatures (300 less than T less than 500 K). For example, the output of a cell which was irradiated up to a fluence of 1 x 10(exp 16) cm(sup -2) was observed to recover to within 5 percent of the pre-irradiation output. An apparent correlation between the recovery of I(sub sc) and the annealing of the H4 defect and of the minority carrier trapping centers is observed. An apparent correlation between the recovery of VO, and the annealing of the H5 defect is also observed. These apparent correlations are used to develop a possible model for the mechanism of the recovery of the solar cells.

Walters, R. J.↗

Software Formal Inspections Guidebook

The Software Formal Inspections Guidebook is designed to support the inspection process of software developed by and for NASA. This document provides information on how to implement a recommended and proven method for conducting formal inspections of NASA software. This Guidebook is a companion document to NASA Standard 2202-93, Software Formal Inspections Standard, approved April 1993, which provides the rules, procedures, and specific requirements for conducting software formal inspections. Application of the Formal Inspections Standard is optional to NASA program or project management. In cases where program or project management decide to use the formal inspections method, this Guidebook provides additional information on how to establish and implement the process. The goal of the formal inspections process as documented in the above-mentioned Standard and this Guidebook is to provide a framework and model for an inspection process that will enable the detection and elimination of defects as early as possible in the software life cycle. An ancillary aspect of the formal inspection process incorporates the collection and analysis of inspection data to effect continual improvement in the inspection process and the quality of the software subjected to the process.

Source record↗

Novel Electric Nucleation Technique for Growing Large Single Crystal in Space

We present, herein, an electrical model for growing crystals without a seed which might not be free of defects and thereby still hinder the growth of a perfect crystal in space. The system is designed to confine nucleation to a single site automatically in an under saturated solution to avoid multiple nucleation. The technique is based on the effect of electrostriction, which is the tendency of a material to become more compressed in the presence of an electric field. The system is designed to create an electrical potential well between two hyperboloid electrodes with applied voltage at low frequency. The induced potential well between the electrodes oscillates at low frequency and attracts the solute and condenses it into the region of maximum field intensity. The alternating voltage prevents molecules with intrinsic charge from being attracted to the electrodes. The continuous presence of the electric field during the duration of the experiment, provides a continuous migration of the molecules toward the trapping site. This will eliminate the creation of a depletion region around the nucleation center and will enhance the crystal growth rate. Aside from the above mentioned advantages, the system is compact, safe to operate, and inexpensive to build.

Abdeldayem, Hossin↗

NDE for Material Characterization in Aeronautic and Space Applications

This paper describes selected nondestructive evaluation (NDE) approaches that were developed or tailored at the NASA Glenn Research Center for characterizing advanced material systems. The emphasis is on high-temperature aerospace propulsion applications. The material systems include monolithic ceramics, superalloys, and high temperature composites. In the aeronautic area, the highlights are cooled ceramic plate structures for turbine applications, F-TiAl blade materials for low-pressure turbines, thermoelastic stress analysis (TSA) for residual stress measurements in titanium based and nickel based engine materials, and acousto ultrasonics (AU) for creep damage assessment in nickel-based alloys. In the space area, examples consist of cooled carbon-carbon composites for gas generator combustors and flywheel rotors composed of carbon fiber reinforced polymer matrix composites for energy storage on the international space station (ISS). The role of NDE in solving manufacturing problems, the effect of defects on structural behavior, and the use of NDE-based finite element modeling are discussed. NDE technology needs for improved microelectronic and mechanical systems as well as health monitoring of micro-materials and components are briefly discussed.

Baaklini, George Y.↗

Transport Through Carbon Nanotube Wires

This viewgraph presentation gives an overview of the the current carrying capacity of nanotube wires. Information is given on the motivation for the research, models and assumptions, Bragg reflection and Zener tunneling effects, and the influence of defects. Results show that dI/dv versus V does not increase in a manner commensurate with the increase in the number of subbands; in small diameter nanotubes, Zener tunneling is ineffective; Zener tunneling contributes to current with increase in nanotube diameter; and the increase in dI/dV with bias is much smaller than the increase in the number of subbands.

Anantram, M. P.↗

Observation and Modeling of Single Wall Carbon Nanotube Bend Junctions

Single wall carbon nanotube (SWNT) bends, with diameters from approx. 1.0 to 2.5 nm and bend angles from 18 deg. to 34 deg., are observed in catalytic decomposition of hydrocarbons at 600 - 1200 C. An algorithm using molecular dynamics simulation (MD) techniques is developed to model these structures that are considered to be SWNT junctions formed by topological defects (i.e. pentagon-heptagon pairs). The algorithm is used to predict the tube helicities and defect configurations for bend junctions using the observed tube diameters and bend angles. The number and arrangement of the defects at the junction interfaces are found to depend on the tube helicities and bend angle. The structural and energetic calculations using the Brenner potential show a number of stable junction configurations for each bend angle with the 34 deg. bends being more stable than the others. Tight binding calculations for local density of state (LDOS) and transmission coefficients are carried out to investigate electrical properties of the bend junctions.

Han, Jie↗