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At least 955 records · Page 53

Control of magnetic properties of MnBi 2 Te 4 using a van der Waals ferroelectric III 2 -VI 3 film and biaxial strain

Using the first-principles calculations, we systematically investigated magnetic properties of a MnBi 2 Te 4 (MBT) monolayer in contact with III 2 -VI 3 two-dimensional ferroelectric substrates. As the electric polarization in the ferroelectric films is switched, a semiconductor to half-metal transition occurs in MBT, and its magnetic easy axis in several cases reorients. As an example, the Curie temperature of MBT/In 2 Se 3 can be enhanced to 21.5 or 32 K under the influence of electric polarization and biaxial strain, much higher than that of the pristine MBT monolayer, which is 14.5 K in our calculations. Our results in this work suggest effective ways to tune magnetic properties of MBT and provide useful insights for the further development of these important van der Waals functional materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Local probes for quantum Hall ferroelectrics and nematics

Two-dimensional multivalley electronic systems in which the dispersion of individual pockets has low symmetry give rise to quantum Hall ferroelectric and nematic states in the presence of strong quantizing magnetic fields. In this work, we investigate the local signatures of these states arising near impurities that can be probed via scanning tunneling microscopy (STM) spectroscopy. For quantum Hall ferroelectrics, we demonstrate a direct relation between the dipole moment measured at impurity bound states and the ideal bulk dipole moment obtained from the modern theory of polarization. We also study the many-body problem with a single impurity via exact diagonalization and find that near strong impurities a nontrivial excitonic state can form with specific features that can be easily identified via STM spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ba ( Ti 1 - x , Zr x ) O 3 relaxors: Dynamic ferroelectrics in the gigahertz frequency range

Relaxor ferroelectrics are of great scientific and technological significance as they exhibit large and unusual responses to external stimuli. Their hallmark features are broadness and frequency dispersion of the peak in the temperature dependence of the dielectric constant. Both are believed to originate from the dynamics of polar nanoregions. Here, we apply first-principles-based molecular dynamics to resolve the gigahertz electric response of dynamically poled Ba (Ti 1 - x , Zr x ) O 3 ferroelectric relaxors that remained overlooked so far. We find that (i) the hallmark relaxor features continue to persist even in the dynamically poled structures, but do not necessarily originate from the polar nanoregions dynamics; (ii) dynamically poled samples exhibit polarization aging which leads to the frequency dependence of both remnant polarization and the Curie temperature; (iii) “dynamical” nature of the latter naturally explains the frequency dependence of the dielectric susceptibility maximum in dynamically poled Ba (Ti 1 - x , Zr x) O 3 ; and (iv) incorporation of the polarization aging into dielectric susceptibility expression explains its enhancing contribution in an intuitive way.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ferroelectric control of magnetic anisotropy of 5 d transition metal monolayers

Electric field control of magnetism using ferroelectric materials offers promising applications in low-power spintronics. We have conducted systematic density functional theory calculations to investigate the magnetic properties of epitaxial 5 d transition metal monolayers on a ferroelectric substrate: PbTi⁢O 3 (PTO). Our study reveals that the magnetocrystalline anisotropy energy of the osmium monolayer is significantly enhanced to 18.1 meV/Os in the upward polarization state and, moreover, the anomalous Hall coefficient of osmium/PTO film is tunable by reversing the electric polarization of the PTO substrate. Additionally, the electric polarization reversal in PTO rotates the easy magnetization axis of the iridium and platinum monolayers by 90°, which is attributed to the rearrangement of interfacial charges. In conclusion, our findings suggest an efficient approach to control the magnetization direction of monoatomic layers and provide valuable insights for the development of low-energy spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ballistic photocurrent driven by optical phonon modes in a polaronic ferroelectric

In this study, we investigate the effect of local electron-phonon coupling on nonlinear optical conductivity in an interacting ferroelectric system. Using real-time simulations, we show an enhancement in nonlinear conductivity under linearly polarized light due to generation of the phonon-assisted ballistic current in addition to the injection current generated by electron-hole pairs. The optically excited phonon modes generate an asymmetric carrier distribution that causes a strong directional ballistic current. The ballistic current enhances the photocurrent several times at above band-gap excitation frequencies and is sublinearly dependent on the excitation intensity. This strong phonon-assisted zero-frequency directional ballistic current demonstrates an alternative way to boost the bulk photovoltaic effect (BPVE) in electronic ferroelectric materials with strong local electron-phonon coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Pressure-dependent phase transitions in hybrid improper ferroelectric Ruddlesden-Popper oxides

The temperature-dependent phase transitions in Ruddlesden-Popper oxides with perovskite bilayers have been under increased scrutiny in recent years due to the so-called hybrid improper ferroelectricity that some chemical compositions exhibit. However, little is currently understood about the hydrostatic pressure dependence of these phase transitions. Herein we present the results of a combined high-pressure powder synchrotron x-ray diffraction experiment and a b i n i t i o study on the bilayered Ruddlesden-Popper phases Ca 3 Mn 2 O 7 and Ca 3 Ti 2 O 7 . In both compounds we observe a first-order phase transition, that in combination with our density functional theory calculations, we can confidently assign as being between polar A 2 1 a m and nonpolar A c a a structures. Interestingly, we show that while the application of pressure ultimately favors a nonpolar phase, as is commonly observed for proper ferroelectrics, regions of response exist where pressure actually acts to increase the polar mode amplitudes. The reason for this can be untangled by considering the varied response of octahedral tilts and rotations to hydrostatic pressure and their trilinear coupling with the polar instability. Published by the American Physical Society 2024

Materials Science↗

Conductivity of twin-domain-wall/surface junctions in ferroelastics: Interplay of deformation potential, octahedral rotations, improper ferroelectricity, and flexoelectric coupling

The electronic and structural phenomena at the twin domain walls and wall-surface junctions in the ferroelastic materials are analyzed. Carriers accumulation caused by the strain-induced band structure changes originated via the deformation potential mechanism, structural order parameter gradient, rotostriction and flexoelectric coupling is explored. Approximate analytical results show that inhomogeneous elastic strains, which exist in the vicinity of the twin walls surface junctions due to the rotostriction, decrease the local band gap via the deformation potential and flexoelectric coupling mechanisms. This is the direct mechanism of the domain walls static conductivity in ferroelastics and, by extension, in multiferroics and ferroelectrics. On the other hand, flexoelectric and rotostriction coupling leads to the appearance of the improper polarization and electric fields proportional to the structural order parameter gradient in the vicinity of the twin walls surface junctions. The flexo-roto fields leading to the carrier accumulation are considered as indirect mechanism of the twin walls conductivity. Comparison of the direct and indirect mechanisms illustrates complex range of phenomena directly responsible for domain wall static conductivity in materials with multiple order parameters.Electronic and structural phenomena at the twin-domain-wall/surface junctions in the ferroelastic materials are analyzed. Carriers accumulation caused by the strain-induced band structure changes originated via the deformation potential mechanism, structural order parameter gradient, rotostriction, and flexoelectric coupling is explored. Approximate analytical results show that inhomogeneous elastic strains, which exist in the vicinity of the twin-domain-wall/surface junctions due to the rotostriction coupling, decrease the local band gap via the deformation potential and flexoelectric coupling mechanisms. This is the direct mechanism of the twin-wall static conductivity in ferroelastics and, by extension, in multiferroics and ferroelectrics. On the other hand, flexoelectric and rotostriction coupling leads to the appearance of the improper polarization and electric fields proportional to the structural order parameter gradient in the vicinity of the twin-domain-wall/surface junctions. The flexoroto fields leading to the carrier accumulation are considered as an indirect mechanism of the twin-wall conductivity. Comparison of the direct and indirect mechanisms illustrates a complex range of phenomena directly responsible for domain-wall static conductivity in materials with multiple order parameters.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift computation for a uniformly polarized prolate ellipsoid with varying aspect ratio in the absence of screening charges.

36 MATERIALS SCIENCE↗

Average and local structure of the Pb-free ferroelectric perovskites ( Sr , Sn ) TiO 3 and ( Ba , Ca , Sn ) TiO 3

The characteristic structural off -centering of Pb 2+ in oxides, associated with its 6s 2 lone pair, allows it to play a dominant role in polar materials, and makes it a somewhat ubiquitous component of ferroelectrics. In this work, we examine the compounds Sr 0.9 Sn 0.1 TiO 3 and Ba 0.79 Ca 0.16 Sn 0.05 TiO 3 using neutron total scattering techniques with data acquired at di erent temperatures. In these compounds, previously reported as ferroelectrics, Sn 2+ appears to display some of the characteristics of Pb 2+ . We compare the local and long-range structures of the Sn2+-substituted compositions to the unsubstituted parent compounds SrTiO 3 and BaTiO 3 . Lastly, we find that even at these small substitution levels, the Sn 2+ lone pairs drive the local ordering behavior, with the local structure of both compounds more similar to the structure of PbTiO 3 rather than the parent compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhanced ferroelectric polarization and possible morphotrophic phase boundary in PZT-based alloys

We present a combined theoretical and experimental study of alloys of the high performance piezoelectric PZT (PbZr 0.5 Ti 0.5 O 3 ) with BZnT (BiZn 0.5 Ti 0.5 O 3 ) and BZnZr (BiZn 0.5 Zr 0.5 O 3 ), focusing on atomic displacements, ferroelectric polarization, and elastic stability. From theory we find that the 75-25 PZT-BZnT alloy has substantially larger cation displacements, and hence ferroelectric polarization than the PZT base material, on the tetragonal side of the phase diagram. We also find a possible morphotrophic phase boundary in this system by comparing displacement patterns and optimized c/a ratios. Elastic stability calculations find the structures to be essentially stable. Lastly, experiments indicate the feasibility of sample synthesis within this alloy system, although measurements do not find significant polarization, probably due to a large coercive field.

36 MATERIALS SCIENCE↗

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressure and film thickness with nontrivial topology or switchable and nonswitchable regions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Intrinsic structural instabilities of domain walls driven by gradient coupling: Meandering antiferrodistortive-ferroelectric domain walls in BiFeO 3

Using the Landau-Ginzburg-Devonshire approach, we predict the intrinsic instability of the ferroelectric-ferroelastic domain walls in the multiferroic BiFeO 3 emerging from the interplay between the gradient terms of the antiferrodistortive and ferroelectric order parameters at the walls. These instabilities are the interface analog of the structural instabilities in the vicinity of phase coexistence in the bulk, and so they do not stem from incomplete polarization screening in thin films or its spatial confinement, electrostrictive or flexoelectric coupling. The effect of BiFeO 3 material parameters on the 71°, 109°, and 180° walls is explored, and it is shown that the meandering instability appears at 109° and 180° walls for small gradient energies, and the walls become straight and broaden for higher gradients. In contrast to the 180° and 109° domain walls, uncharged 71° walls are always straight, and their width increases with increasing the tilt gradient coefficient. As a result, the wall instability and associated intrinsic meandering provide insight into the behavior of morphotropic and relaxor materials, wall pinning, and mechanisms of interactions between order parameter fields and local microstructure.

36 MATERIALS SCIENCE↗

Observation of Electronic Ferroelectric Polarization in Multiferroic YMn{2}O{5}

We report the observation of a magnetic polarization of the O 2p states in YMn{sub 2}O{sub 5} through the use of soft x-ray resonant scattering at the oxygen K edge. Remarkably, we find that the temperature dependence of the integrated intensity of this signal closely follows the macroscopic electric polarization, and hence is proportional to the ferroelectric order parameter. This is in contrast with the temperature dependence observed at the Mn L{sub 3} edge, which reflects the Mn magnetic order parameter. First-principles calculations provide a microscopic understanding of these results and show that a spin-dependent hybridization of O 2p and Mn 3d states results in a purely electronic contribution to the ferroelectric polarization, which can exist in the absence of lattice distortions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spin-Chirality-Driven Ferroelectricity on a Perfect Triangular Lattice Antiferromagnet

Magnetic field (B) variation of the electrical polarization P c ( ∥c) of the perfect triangular lattice antiferromagnet RbFe(MoO 4 ) 2 is examined up to the saturation point of the magnetization for B⊥c. P c is observed only in phases for which chirality is predicted in the in-plane magnetic structures. No strong anomaly is observed in P c at the field at which the spin modulation along the c axis, and hence the spin helicity, exhibits a discontinuity to the commensurate state. These results indicate that the ferroelectricity in this compound originates predominantly from the spin chirality, the explanation of which would require a new mechanism for magnetoferroelectricity. Lastly, the obtained field-temperature phase diagrams of ferroelectricity well agree with those theoretically predicted for the spin chirality of a Heisenberg spin triangular lattice antiferromagnet.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Light-activated Gigahertz Ferroelectric Domain Dynamics

Using time- and spatially-resolved hard X-ray diffraction microscopy, the striking structural and electrical dynamics upon optical excitation of a single crystal of BaTiO 3 are simultaneously captured on sub-nanoseconds and nanoscale within individual ferroelectric domains and across walls. A large emergent photo-induced electric field of up to 20 million volts per meter is discovered in a surface layer of the crystal, which then drives polarization and lattice dynamics that are dramatically distinct in a surface layer versus bulk regions. A dynamical phase-field modeling (DPFM) method is developed that reveals the microscopic origin of these dynamics, leading to GHz polarization and elastic waves travelling in the crystal with sonic speeds and spatially varying frequencies. The advance of spatiotemporal imaging and dynamical modeling tools open opportunities of disentangling ultrafast processes in complex mesoscale structures such as ferroelectric domains

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Lamellar fluctuations melt ferroelectricity.

We consider a standard Ginzburg-Landau model of a ferroelectric whose electrical polarization is coupled to gradients of elastic strain. At the harmonic level, such flexoelectric interaction is known to hybridize acoustic and optic phonon modes and lead to phases with modulated lattice structures that precede the state with spontaneously broken inversion symmetry. Here, we use the self-consistent phonon approximation to calculate the effects of thermal and quantum polarization fluctuations on the bare hybridized modes to show that such long-range modulated order is unstable at all temperatures. We discuss the implications for the nearly ferroelectric SrTiO3 and KTaO3, and we propose that these systems are melted versions of an underlying modulated state that is dominated by nonzero momentum thermal fluctuations except at the very lowest temperatures.

Guzman-Verri, G. G.↗

Ferroelectricity in [111]-oriented epitaxially strained SrTiO 3 from first principles

We use first-principles density-functional theory calculations to investigate the effect of biaxial strain in the low-temperature structural and ferroelectric properties of [111]-oriented SrTiO 3 . In this work we find that [111] biaxial strain, achievable by coherent epitaxial growth along the [111] direction, induces structural distortions in SrTiO 3 that are not present in either bulk or [001]-oriented SrTiO 3 . Under [111] biaxial strain, SrTiO 3 displays ferroelectricity at tensile strain, and paraelectricity at compressive strain. We compute the phonon spectrum and macroscopic polarization of SrTiO 3 as a function of [111] biaxial strain, and relate our results to the predictions of the free-energy phenomenological model of Pertsev, Tagantsev, and Setter

36 MATERIALS SCIENCE↗

Domain-wall-mediated polarization switching in ferroelectric AlScN: Strain relief and field-dependent dynamics

While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field (𝐸 𝑐 ) for polarization switching. Unraveling the atomistic switching dynamics is therefore critical for tailoring 𝐸 𝑐 . Here, in this study, we combine density functional theory and machine-learning molecular dynamics to elucidate the polarization switching mechanisms in AlScN over various Sc concentrations and applied electric fields. We find that excessive lattice strain strictly prohibits collective polarization switching, but the preexisting domain walls relieve strain and lead to a distinct switching dynamics—dictating a field-dependent switching mechanism. At low electric fields, switching occurs via gradual domain-wall propagation consistent with the Kolmogorov-Avrami-Ishibashi model. In contrast, high fields stimulate additional nucleation, driving a rapid, homogeneous reversal process described by the simultaneous nonlinear nucleation and growth model. These findings highlight the critical role of domain-wall dynamics and suggest domain engineering as a viable strategy to tailor coercive fields in AlScN and related ferroelectrics.

36 MATERIALS SCIENCE↗