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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Cyclic Thermal Oxidation Evaluation to Improve Ti6Al4V Surface in Applications as Biomaterial

Thermal oxidation treatments are widely used to modify titanium surfaces. Thermally oxidized titanium alloys are used as biomaterials due to their better surface properties, such as corrosion resistance. However, the use of cyclic thermal treatment for this purpose has not yet been reported. This paper’s objective was to compare roughness, microhardness and corrosion resistance after cyclic and conventional isothermal heat treatments in a Ti6Al4V alloy. The heat treatments were performed over a period of 24 h with a maximum temperature of 650 °C, and cyclic conditions were executed from 200 to 400 °C for 48 cycles, each lasting 0.5 h. After the thermal treatments, roughness was measured through profilometer and atomic force microscopy, Vickers microhardness was evaluated, and polarization corrosion tests were performed in simulated body fluid. All treatments increased surface roughness, microhardness and corrosion resistance at 500 mV above open-circuit potential in polarization tests, compared to the material without oxidation. These results are associated with rutile formation, observed through XRD analysis. Although the isothermal and cyclic treatments presented similar behaviors, the 650-200 °C cyclic heat treatment provided an intermediate roughness and produced a slightly better corrosion resistance, demonstrating that cyclic thermal treatments are a viable alternative for improving titanium alloy surface properties.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electronic and magnetic properties of (1 1 1)-oriented CoCr{sub 2}O{sub 4} epitaxial thin film

We report on the fabrication of high quality (1 1 1)-oriented ferrimagnetic normal spinel CoCr{sub 2}O{sub 4} epitaxial thin films on single crystal Al{sub 2}O{sub 3} substrates. The structural, electronic, and magnetic properties were characterized by in-situ reflection high energy electron diffraction, atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, dc magnetization measurement, and element resolved resonant X-ray magnetic scattering. The comprehensive characterization reveals that no disorder in the cation distribution or multivalency issue is present in the samples. As a result, Kagomé and triangular layers are naturally formed via this specific growth approach. These findings offer a pathway to fabricate two dimensional Kagomé heterostructures with exotic quantum many-body phenomena by means of geometrical design.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Photovoltaic properties of Aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} thin films grown by pulsed laser deposition

We report a remarkable photovoltaic effect in pulsed laser deposited multiferroic aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} (BFTO) thin films sandwiched between ZnO:Al transparent conductive oxide top electrode and SrRuO{sub 3} bottom electrode fabricated on amorphous fused silica substrates. The structural and micro structural properties of these films were analysed by X-ray diffraction and atomic force microscopy techniques. The films were showing a photo sensitive ferroelectric behaviour with a notable apparent polarization in the range of 10–15 μC/cm{sup 2}. These films also exhibited a switchable photo-response and this parameter was observed to be sensitive to polarisation field and the polarization direction. The device shows a large ON/OFF photo current ratio with an open circuit voltage of 0.14 V. The photo response at zero bias of this BFTO based heterostructures showed rapid increase to a saturation value of 6 μA at zero bias.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Growth of ultrathin Bi 2 Se 3 films by molecular beam epitaxy

Bi 2 Se 3 is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decreases to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi 2 Se 3 may exhibit quantum spin Hall states. However, growing coalesced ultrathin Bi 2 Se 3 films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi 2 Se 3 films having thicknesses down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pretreatment—growing and decomposing a few layers of Bi 2 Se 3 before the actual deposition—is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Altogether, coalesced ultrathin Bi 2 Se 3 films with lower surface roughness enable thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Activation-induced structural change in the GluN1/GluN3A excitatory glycine receptor

Highlights: • We studied the response of the GluN1/GluN3A excitatory glycine receptor to activation. • GluN1 and GluN3A subunits interacted within transfected cells. • The GluN1/GluN3A receptor was functionally active. • Glycine or D-serine caused a ∼1 nm height reduction in bilayer-integrated receptors. • This height reduction was abolished by the glycine antagonist DCKA. - Abstract: Unlike GluN2-containing N-methyl-D-aspartate (NMDA) receptors, which require both glycine and glutamate for activation, receptors composed of GluN1 and GluN3 subunits are activated by glycine alone. Here, we used atomic force microscopy (AFM) imaging to examine the response to activation of the GluN1/GluN3A excitatory glycine receptor. GluN1 and GluN3A subunits were shown to interact intimately within transfected tsA 201 cells. Isolated GluN1/GluN3A receptors integrated into lipid bilayers responded to addition of either glycine or D-serine, but not glutamate, with a ∼1 nm reduction in height of the extracellular domain. The height reduction in response to glycine was abolished by the glycine antagonist 5,7-dichlorokynurenic acid. Our results represent the first demonstration of the effect of activation on the conformation of this receptor.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2014

Direct imaging of enhanced current collection on grain boundaries of Cu(In,Ga)Se{sub 2} solar cells

We report on direct imaging of current collection by performing conductive atomic force microscopy (C-AFM) measurement on a complete Cu(In,Ga)Se{sub 2} solar cell. The localized current was imaged by milling away the top conductive layer of the device by repeated C-AFM scans. The result exhibits enhanced photocurrent collection on grain boundaries (GBs) of CIGS films, consistent with the argument for electric-field-assisted carrier collection on the GBs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Moving antiphase boundaries using an external electric field

Antiphase boundaries (APBs) are unique domain walls that may demonstrate switchable polarization in otherwise non-ferroelectric materials such as SrTiO{sub 3} and PbZrO{sub 3}. The current study explores the possibility of displacing such domain walls at the nanoscale. We suggest the possibility of manipulating APBs using the inhomogeneous electric field of an Atomic Force Microscopy (AFM) tip with an applied voltage placed in their proximity. The displacement is studied as a function of applied voltage, film thickness, and initial separation of the AFM tip from the APB. It is established, for example, that for films with thickness of 15 nm, an APB may be attracted under the tip with a voltage of 25 V from initial separation of 30 nm. We have also demonstrated that the displacement is appreciably retained after the voltage is removed, rendering it favorable for potential applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Self-assembling of formic acid on the partially oxidized p (2×1) Cu(110) surface reconstruction at low coverages

Carbon dioxide (CO 2 ) reduction for synthetic fuel generation could be an integral part of a sustainable energy future. Copper (Cu) is the leading electrocatalyst for CO 2 reduction to produce multiple C-containing products such as C1 and C2 hydrocarbons and oxygenates. Understanding the mechanisms leading to their production could help optimize these pathways further. Adsorption studies of the many possible intermediates on well-characterized surfaces are crucial to elucidating these mechanisms. In this work, we explore the adsorption configurations of formic acid (HCOOH) on the surface of the partially oxidized p (2 × 1) reconstruction of the Cu(110) surface, using low-temperature scanning tunneling and atomic force microscopy, in conjunction with density functional theory modeling. We find that HCOOH adsorbs favorably on the CuO chain comprising the reconstruction. The adsorption interactions involve dative bonding of the carbonyl O to the oxidized Cu and hydrogen bonding of the OH group to the surface O or to an adjacently adsorbed HCOOH molecule. Furthermore, cooperative adsorption of the molecules occurs, forming two- to three-molecule-long oligomer chains, facilitated by intermolecular hydrogen bonding and mutual polarization of the CuO acid-base adsorption sites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

The effect of hydrogen embrittlement on the localized plastic deformation of aluminum alloy

The effect of hydrogen embrittlement on the localized plastic deformation of aluminum alloy D1 was investigated. The studies were performed for the test samples of aluminum alloy subjected to electrolytic hydrogenation. It is found that the mechanical properties and localized plastic deformation parameters of aluminum alloy are affected adversely by hydrogen embrittlement. The hydrogenated counterpart of alloy has a lower degree of ductility relative to the original alloy; however, the plastic flow behavior of material remains virtually unaffected. Using scanning electron and atomic force microscopy methods, the changes in the fracture surface were investigated. The deformation diagrams were examined for the deformed samples of aluminum alloy. These are found to show all the plastic flow stages: the linear, parabolic and pre-failure stages would occur for the respective values of the exponent n from the Ludwik-Holomon equation. Using digital speckle image technique, the local strain patterns were being registered for the original alloy D1 and the counterpart subjected to electrolytic hydrogenation for 100 h.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases

GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2 μm/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Influence of substrate temperature on structural and optical properties of RF sputtered ZnMnO thin films

The ZnMnO thin films were deposited on glass substrates by radio frequency magnetron sputtering method. The properties of ZnMnO thin films were investigated by high-resolution x-ray diffractometer (HRXRD),atomic force microscopy (AFM), UV-Vis spectrometer and room temperature photoluminescence (PL), under the influence of substrate temperature. The substrate temperature was varied from 300, 400 and 500°C. With increasing the substrate temperature, the structure of the films changed from cubic to hexagonal. The cubic ZnMnO thin films grown along [210] direction, while the hexagonal ones grown along [002] direction. The changes in surface morphology provided a proof on the structural transition. Also, decrease and increase of optical band gap is associated with cubic or hexagonal structure of the films.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Detecting the dipole moment of a single carbon monoxide molecule

Using non-contact atomic force microscopy with metallic tips enabled us to detect the electrostatic dipole moment of single carbon monoxide (CO) molecules adsorbed on three very different substrates. The observed distance dependent contrast can be explained by an interplay between the attractive van der Waals interaction and the repulsive electrostatic interaction, respectively, with the latter stemming from antiparallel aligned dipoles in tip and molecule. Our results suggest that metallic as well as CO-functionalized tips are able to probe electrostatic properties of polar molecules and that repulsive dipole-dipole interactions have to be considered when interpreting complex contrast patterns.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2016

Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaN films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiO{sub x}/Ti junctions

We investigate the properties and characteristics of planar Ti/TiO{sub x}/Ti junctions, which consist of transverse TiO{sub x} lines drawn on Ti test patterns. Junctions are elaborated by means of local anodic oxidation using atomic force microscopy. An irreversible morphological transformation occurring in a reproducible manner is observed when these planar junctions are electrically stressed under ambient atmosphere. Structural and chemical analyses based on transmission electron microscopy techniques reveal the extension of the initial amorphous TiO{sub x} into a crystalline rutile phase. This irreversible transformation is proven to vanish completely if the electrical stress occurs under vacuum atmosphere. Finally, we carry out temperature dependent electrical measurements in order to elucidate their conduction mechanism: Schottky emission above an ultra-low potential barrier is assumed to dominate under vacuum atmosphere whereas ionic conduction seems to prevail in air.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Co doping effect on structural and optical properties of nickel oxide (NiO) thin films via spray pyrolysis

Undoped and cobalt doped nickel oxide thin films (Co:NiO) at different doping concentrations were deposited on a glass substrate at constant substrate temperature by spray pyrolysis. The doping percentage increased from 0 to 10% and the effects of doping content on structural, morphological and optical properties were explored by X-ray diffraction, atomic force microscopy and UV–visible spectroscopy, respectively. X-ray diffraction configurations proved the NiO thin films were polycrystalline in nature having a cubic crystal structure. The regularly used parameters such as crystallite size, micro-strain, dislocation density and texture coefficient are presented from structural data. The average crystallite size is found between 10 and 14 nm with cobalt doping (Co) concentration. The band gap energies were increased with the effect of Co doping concentration in the range between 2.10 and 2.50 eV. The various optical constants as a function of photon energy are modified with Co doping concentration.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Structural change upon annealing of amorphous GeSbTe grown on Si(111)

The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the applied voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗