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At least 955 records · Page 53

Effects of long term space environment exposure on optical substrates and coatings

At the time of our Second LDEF Post-Retrieval Symposium report, we had completed cleaning and measuring the post flight spectral performance of all of the samples except for the fused silica substrate with an antireflection (SiO2/TiO2) coating. As was documented in that report, after cleaning, all of the samples returned to their original pre-flight performance, with the exception of the fused silica anti-reflectance coated sample, which had significant degraded performance. All normal methods of removing the contaminant from the surface of this sample failed except for oxygen plasma etch. At the time of the previous report, we had only exposed the sample to three hours of plasma etch. We have since continued the plasma etch for a total of 32 hours, after which time, the transmission of the sample almost reached its pre-flight values. The peak areas of the transmission curves remained shifted approximately 150 nm. Of interest is the fact that the control samples, which hadn't flown, did not exhibit any spectral shifting. In summary, after the 6 yr exposure to the space environment, all of the coatings and substrates returned to their pre-flight performance after cleaning, with the exception of the antireflection coated fused silica sample. On this sample, the spectral transmission curves shifted approximately 150 nm.

Vallimont, John↗

Liquid metal micro heat pipes for space radiator applications

Micromachining is a chemical means of etching three-dimensional structures, typically in single-crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (micro electro mechanical systems), where in addition to the ordinary two dimensional (planar) microelectronics, it is possible to build three-dimensional micromotors, electrically-actuated microvalves, hydraulic systems, and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor microfabrication. The University of Cincinnati group in collaboration with NASA Lewis formed micro heat pipes in silicon by the above techniques. Work is ongoing at a modest level, but several essential bonding and packaging techniques have been recently developed. Currently, we have constructed and filled water/silicon micro heat pipes. Preliminary thermal tests of arrays of 125 micro heat pipes etched in a 1 inch x 1 inch x 250 micron silicon wafer have been completed. These pipes are instrumented with extremely small P-N junctions to measure their effective conductivity and their maximum operating power. A relatively simple one-dimensional model has been developed in order to predict micro heat pipes' operating characteristics. This information can be used to optimize micro heat pipe design with respect to length, hydraulic diameter, and number of pipes. Work is progressing on the fabrication of liquid-metal micro heat pipes. In order to be compatible with liquid metal (sodium or potassium), the inside of the micro heat pipes will be coated with a refractory metal (such as tungsten, molybdenum, or titanium).

Gerner, F. M.↗

Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics

Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

Singh, M.↗

A Novel Silicon Micromachined Integrated MCM Thermal Management System

"Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high heat flux applications, respectively. The high heat load application of particular interest in mind is the motor controller developed by Martin Marietta for Nasa to control the thruster's directional actuators on space vechicles. Work is also proposed to develop highly advanced and improved porous wick structures for use in advanced heat loops. The porous wick will be micromachined from silicon using MEMS technology, thus permitting far superior control of pore size and pore distribution (over wicks made from sintered n-ietals), which in turn is expected to led to significantly improved heat loop performance.

Kazmierczak, M. J.↗

Fine Collimator Grids Using Silicon Metering Structure

The project Fine Collimator Grids Using Silicon Metering Structure was managed by Dr. Carol Eberhard of the Electromagnetic Systems & Technology Department (Space & Technology Division) of TRW who also wrote this final report. The KOH chemical etching of the silicon wafers was primarily done by Dr. Simon Prussin of the Electrical Engineering Department of UCLA at the laboratory on campus. Moshe Sergant of the Superconductor Electronics Technology Department (Electronics Systems & Technology Division) of TRW and Dr. Prussin were instrumental in developing the low temperature silicon etching processes. Moshe Sergant and George G. Pinneo of the Microelectronics Production Department (Electronics Systems & Technology Division) of TRW were instrumental in developing the processes for filling the slots etched in the silicon wafers with metal-filled materials. Their work was carried out in the laboratories at the Space Park facility. Moshe Sergant is also responsible for the impressive array of Scanning Electron Microscope images with which the various processes were monitored. Many others also contributed their time and expertise to the project. I wish to thank them all.

Eberhard, Carol↗

Microstructural Development of Directionally Solidified Hg(1-x)Zn(x)Se Alloys

Hg(1-x)Zn(x)Se alloys have been studied as an alternative to HgCdTe for the detection of electromagnetic radiation, because the shorter ZnSe and HgSe bonds were predicted to improve lattice stability. Previous studies showed that optical properties were stable with time and that the microhardness was higher than for HgTe based alloys. However, for this material to be commercially viable, compositional variations must be reduced, and the distribution of defects induced by the growth process must be understood. The basic structural properties of bulk materials were characterized, and dislocation etch pit densities were measured to determine whether the addition of Zn to the HgSe lattice reduced the potential for dislocation formation. Hg(0.9)Zn(0.1)Se alloys were directionally solidified using a modified Bridgman-Stockbarger method and in an applied magnetic field. Radial compositional variations were greatly reduced when solidification occurred in an applied magnetic field. The combination of a convex liquid-solid interface shape and a method for reduced wetting produced boules that were a single crystal after reaching full diameter. Observed surface features indicated ampoule wetting could be eliminated using a graphite getter. Microstructural characteristics were greatly improved over HgCdTe alloys, In six boules, a total of only one twin was observed, and no inclusions were found. A method for polishing and producing dislocation etch pits was developed for these alloys, revealing dislocation etch pit densities one to two orders of magnitude less than HgTe based alloys. A kink in the thermal profile during processing of one boule generated more dislocations than did lattice mismatch due to compositional variations. The results of this investigation indicate this alloy has improved microstructural properties and resistance to dislocation formation compared with similar II-VI alloys, and should be further investigated for the detection of electromagnetic radiation.

Cobb, S. D.↗

The Effect of the Wall Contact and Post-Growth, Cool-Down on Defects in CdTe Crystals Grown By 'Contactless' PVT

To take a maximum advantage of materials processing in microgravity for understanding the effects of gravity, gravity-independent effects should be minimized. In crystal growth, the quality of the grown crystals may depend, among other factors, on their interaction with the walls of the processing container during and after growth, and on the rate of the crystal cool-down at the end of the process. To investigate the above phenomena, a series of CdTe crystal growth processes was carried out. The crystals were grown by physical vapor transport without contact with the side walls of the silica glass ampoules. To eliminate the effect of the seed quality, and to reduce the number of nuclei and related crystal grains, the Low Supersaturation Nucleation technique was applied. The source temperature was 930 C, the undercooling was a few degrees. The crystals, having the diameter of 25 mm, grew at the rate of a few mm per day. The post-growth cool-down to the room temperature was conducted at different rates, and lasted from a few minutes to four days. The crystals were characterized using chemical etching, low temperature luminescence, and Synchrotron White Beam X-ray Topography techniques. The dislocation (etch pit) density was measured and its distribution was analyzed by comparison with Poisson curves and with the Normalized Radial Distribution Correlation Function. In the regions where the crystal is in contact with silica, the materials show a considerable strain field which extends for a few mm or more from the silica-crystal interface. In the reference crystal grown with contact with the ampoule walls, and when the crystals are cooled at the highest rates, the etch pit/dislocation density is in the high 10(exp 5) per square centimeter region. Typical EPD values for lower cool-down rates are in the lower 10(exp 4) per square centimeter region. In some areas the actual dislocation density was about 10(exp 3) per square centimeter or even less. No apparent effect of the cool-down rate on polygonization was observed. Low temperature PL spectra show, that the dominant peak is (D(sup 0), h) and (A(sup 0), e) for samples with low and high dislocation densities, respectively. For low EPD crystals a peak at 1.45 eV with 21 meV phonon replicas was observed and attributed to donor-acceptor pair to neutral copper-acceptor transition. In high EPD crystals this PL structure was not observed, apparently due to the masking effect of the strong contribution from the dislocation band.

Palosz, W.↗

The Effect of the Wall Contact and Post-Growth C001-Down on Defects in CdTe Crystals Grown by Contactless PVT

In crystal growth, the quality of the final material may depend, among other factors, on its interaction with the walls of the ampoule during and after the growth, and on the rate of the crystal cool-down at the end of ate the process. To investigate the above phenomena, a series of CdTe crystal growth processes was carried out, The crystals were grown by physical vapor transport without contact with the side walls of the silica glass ampoules, applying the Low Supersaturation Nucleation technique. The source temperature was 930 C, the undercooling was a few degrees. The crystals, having the diameter of 25 mm, grew at the rate of a few mm per day. The post-growth cool-down to the room temperature was conducted at different rates, and lasted from a few minutes to four days. The crystals were characterized using chemical etching low temperature luminescence, and Synchrotron White Beam X-ray Topography techniques. The dislocation (etch pit) density was measured and its distribution was analyzed by comparison with Poisson curves and with the Normalized Radial Distribution Correlation Function. It was found that the contact of the crystal with silica leads to a strain field and high (in the 105 sq cm range) dislocation (etch pit) density. Similar defect concentrations were found in crystals subjected to fast post-growth cool-down. Typical EPD values for lower cool-down rates and in regions not affected by wall interactions are in the lower 10(exp 4) sq cm range. In some areas the actual dislocation density was about 10(exp 3) sq cm or even less. No apparent effect of the cool-down rate on polygonization was observed. A fine structure could be discerned in low-temperature PL spectra of crystals with low dislocation density.

Palosz, W.↗

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Sharma, S. P.↗

Fabrication of Microshutter Arrays for James Webb Space Telescope

Two-dimensional MEMS microshutter arrays are being developed at NASA Goddard Space Flight Center for use in the near-infrared region on the Next Generation Space Telescope (NGST). The microshutter arrays are designed for the selective transmission of light with high efficiency and high contrast. The NGST environment requires cryogenic operation at 45K. Microshutter arrays are fabricated out of silicon-oxide-insulated (SOI) silicon wafers. Arrays are close-packed silicon nitride membranes with a pixel size of 100x100 microns. Individual shutters are patterned with a torsion flexure permitting shutters to open 90 degrees with a minimized mechanical stress concentration. The mechanical shutter arrays are fabricated using MEMS technologies. The processing includes a multi-layer metal deposition and patterning of shutter electrodes and magnetic pads, reactive ion etching (RE) of the front side to form shutters out of the nitride membrane, an anisotropic back-etch for wafer thinning, followed by a deep RIE (DRIE) back-etch down to the nitride shutter membrane to form frames and relieve shutters from the silicon substrate. An additional metal deposition and patterning is used to form back electrodes. Shutters are actuated using a magnetic force and latched using an electrostatic force.

Li, Mary J.↗

Microshutter Arrays for James Webb Space Telescope

Two-dimensional MEMS microshutter arrays are being developed at NASA Goddard Space Flight Center for use in the near-infrared region on the James Webb Space Telescope (JWST). The microshutter arrays are designed for the selective transmission of light with high efficiency and high contrast. The JWST environment requires cryogenic operation at 35K. Microshutter arrays are fabricated out of silicon-oxide-insulated (SOI) silicon wafers. Arrays are close-packed silicon nitride membranes with a pixel size of 100x200 p. Individual shutters are patterned with a torsion flexure permitting shutters to open 90 degrees with a minimized mechanical stress concentration. The mechanical shutter arrays are fabricated using MEMS technologies. The processing includes a multi- layer metal deposition and patterning of shutter electrodes and magnetic pads, reactive ion etching (NE) of the front side to form shutters out of the nitride membrane, an anisotropic back-etch for wafer thinning, followed by a deep RIE (DRIE) back-etch down to the nitride shutter membrane to form W e s and relieve shutters from the silicon substrate. An additional metal deposition and patterning is used to form back electrodes. Shutters are actuated using a magnetic force and latched using an electrostatic force. . . . KEYWORDS: microshutter, MEMS, RIE, DRIE, micro-optics, near inbred, space telescope

Li, Mary J.↗

Undercut Rocks at the MER Gusev Landing Site

On January 3 2004, the NASA Spirit rover landed on the plains inside the Gusev Crater in the southern hemisphere of Mars, and has made observations of the landing site and nearby region in visual and infrared wavelengths, as well as making in-situ measurements of rocks and soil. A number of rocks at the Gusev site are perched, with a significant undercut above the surface; additional rocks show a feature of being eroded or etched at a height of one to three centimeters immediately above the soil line. Some rocks also show terracing, and others show a two-tone pattern of albedo, with a distinct dividing line between a lighter area near the surface and a darker color above the surface. In a small number of cases, the dividing line is correlated with a visible horizontal groove in the rock, most likely indicating an earlier location of burial of the rock. A number of explanations for this undercutting are possible. Perched rocks can be placed on the surface by deflation of the soil from underneath the rock. The surface etching may be abrasion due to reptation. Reptation, or surface creep, occurs as sand moves without leaving the surface, as small (100-200 micron particles) moved by saltation set larger particles in motion. These large particles are effective at abrading the rocks at the surface level. The structure of "ripple" features at the site is evidence to support reptation at the Gusev site. An alternate explanation is etching at the surface by chemically active grit.

Landis, Geoffrey A.↗

Fabrication and Probabilistic Fracture Strength Prediction of High-Aspect-Ratio Single Crystal Silicon Carbide Microspecimens With Stress Concentration

Single crystal silicon carbide micro-sized tensile specimens were fabricated with deep reactive ion etching (DRIE) in order to investigate the effect of stress concentration on the room-temperature fracture strength. The fracture strength was defined as the level of stress at the highest stressed location in the structure at the instant of specimen rupture. Specimens with an elliptical hole, a circular hole, and without a hole (and hence with no stress concentration) were made. The average fracture strength of specimens with a higher stress concentration was larger than the average fracture strength of specimens with a lower stress concentration. Average strength of elliptical-hole, circular-hole, and without-hole specimens was 1.53, 1.26, and 0.66 GPa, respectively. Significant scatter in strength was observed with the Weibull modulus ranging between 2 and 6. No fractographic examination was performed but it was assumed that the strength controlling flaws originated from etching grooves along the specimen side-walls. The increase of observed fracture strength with increasing stress concentration was compared to predictions made with the Weibull stress-integral formulation by using the NASA CARES/Life code. In the analysis isotropic material and fracture behavior was assumed - hence it was not a completely rigorous analysis. However, even with these assumptions good correlation was achieved for the circular-hole specimen data when using the specimen data without stress concentration as a baseline. Strength was over predicted for the elliptical-hole specimen data. Significant specimen-to-specimen dimensional variation existed in the elliptical-hole specimens due to variations in the nickel mask used in the etching. To simulate the additional effect of the dimensional variability on the probabilistic strength response for the single crystal specimens the ANSYS Probabilistic Design System (PDS) was used with CARES/Life.

Nemeth, Noel N.↗

Stacked-disc structure for fluid filter or valve silencer

A stacked-disc structure is comprised of a stack of annular discs (13) scalloped along the outer edge to provide lobes (13a) and etched on one side to provide lands (13a). A web (13d) is retained in the lobes to strengthen the discs so that they will not collapse due to high fluid pressure. The stack of discs is retained by a housing (10) having a fluted interior wall to retain the ends of the lobes. End plates (11 and 12) secure the stack of discs with a spacer (14) at one end having lands (14a) on lobes which match the lobes of the stacked discs to allow fluid to flow into, or out of, the spaces between the lobes of the stacked discs. The spaces between the lands on the etched discs provide passages for fluid flow into or out of the hollow core of the stack. The height of the lands (i.e., depth of the etch) determines the size of the smallest particle that will be permitted to flow through. The stacked-disc structure may be connected to the inlet of a valve, or be incorporated into the valve housing on the inlet side of the valve seat to assure substantially constant fluid velocity, and thereby reduce valve noise when the valve is operated.

Hagler, Jr., Ray↗

Part Marking and Identification Materials' for MISSE

The Materials on International Space Station Experiment (MISSE) is being conducted with funding from NASA and the U.S. Department of Defense, in order to evaluate candidate materials and processes for flight hardware. MISSE modules include test specimens used to validate NASA technical standards for part markings exposed to harsh environments in low-Earth orbit and space, including: atomic oxygen, ultraviolet radiation, thermal vacuum cycling, and meteoroid and orbital debris impact. Marked test specimens are evaluated and then mounted in a passive experiment container (PEC) that is affixed to an exterior surface on the International Space Station (ISS). They are exposed to atomic oxygen and/or ultraviolet radiation for a year or more before being retrieved and reevaluated. Criteria include percent contrast, axial uniformity, print growth, error correction, and overall grade. MISSE 1 and 2 (2001-2005), MISSE 3 and 4 (2006-2007), and MISSE 5 (2005-2006) have been completed to date. Acceptable results were found for test specimens marked with Data Matrix(TradeMark) symbols by Intermec Inc. and Robotic Vision Systems Inc using: laser bonding, vacuum arc vapor deposition, gas assisted laser etch, chemical etch, mechanical dot peening, laser shot peening, laser etching, and laser induced surface improvement. MISSE 6 (2008-2009) is exposing specimens marked by DataLase(Registed TradeMark), Chemico technologies Inc., Intermec Inc., and tesa with laser-markable paint, nanocode tags, DataLase and tesa laser markings, and anodized metal labels.

Roxby, Donald↗

Fabrication and Modification of Nanoporous Silicon Particles

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion etching (RIE), may be applied to make the surface rough. This helps remove the nucleation layer. A protective layer is then deposited on the wafer. The protective layer, such as silicon nitride film or photoresist film, protects the wafer from electrochemical etching in an HF-based solution. A lithography technique is applied to pattern the particles onto the protective film. The undesired area of the protective film is removed, and the protective film on the back side of the wafer is also removed. Then the pattern is exposed to HF/surfactant solution, and a larger DC electrical current is applied to the wafers for a selected time. This step removes the nucleation layer. Then a DC current is applied to generate the nanopores. Next, a large electrical current is applied to generate a release layer. The particles are mechanically suspended in the solvent and collected by filtration or centrifuge.

Ferrari, Mauro↗

Carbon-Nanotube-Carpet Heat-Transfer Pads

Microscopic thermal-contact pads that include carpet-like arrays of carbon nanotubes have been invented for dissipating heat generated in integrated circuits and similarly sized single electronic components. The need for these or other innovative thermal-contact pads arises because the requisite high thermal conductances cannot be realized by scaling conventional macroscopic thermal-contact pads down to microscopic sizes. Overcoming limitations of conventional thermal-contact materials and components, the carbon-nanotube thermal-contact pads offer the high thermal conductivities needed to accommodate the high local thermal power densities of modern electronic circuits, without need for large clamping pressures, extreme smoothness of surfaces in contact, or gap-filling materials (e.g., thermally conductive greases) to ensure adequate thermal contact. Moreover, unlike some conventional thermal-contact components, these pads are reusable. The figure depicts a typical pad according to the invention, in contact with a rough surface on an electronic component that is to be cooled. Through reversible bending and buckling of carbon nanotubes at asperities on the rough surface, the pad yields sufficiently, under relatively low contact pressure, that thermal contact is distributed to many locations on the surface to be cooled, including valleys where contact would not ordinarily occur in conventional clamping of rigid surfaces. Hence, the effective thermal-contact area is greater than that achievable through scaling down of a macroscopic thermal-contact pad. The extremely high longitudinal thermal conductivities of the carbon nanotubes are utilized to conduct heat away from potential hot spots on the surface to be cooled. The fibers protrude from a layer of a filler material (Cu, Ag, Au, or metal-particle- filled gels), which provides both mechanical support to maintain the carbon nanotubes in alignment and thermal conductivity to enhance the diffusion of concentrated heat from the nanotubes into the larger adjacent volume of a heat sink. The array of carbon nanotubes, the filler material, and the heat sink are parts of a unitary composite structure that is fabricated as follows: 1. Using techniques that have been reported previously, the array of substantially perpendicularly oriented carbon nanotubes is grown on a metal, silicon, or other suitable thermally conductive substrate that is intended to become the heat sink. 2. By means of chemical vapor deposition, physical vapor deposition, plasma deposition, ion sputtering, electrochemical deposition, or casting from a liquid phase, some or all of the interstitial volume between carbon nanotubes is filled with the aforementioned layer of mechanically supporting, thermally conductive material. 3. To cause the carbon nanotubes to protrude the desired length from the filler material, an outer layer of filler is removed by mechanical polishing, chemical mechanical polishing, wet chemical etching, electrochemical etching, or dry plasma etching.

Li, Jun↗

Low-Power RIE of SiO2 in CHF3 To Obtain Steep Sidewalls

A reactive-ion etching (RIE) process has been developed to enable the formation of holes with steep sidewalls in a layer of silicon dioxide that covers a silicon substrate. The holes in question are through the thickness of the SiO2 and are used to define silicon substrate areas to be etched or to be built upon through epitaxial deposition of silicon. The sidewalls of these holes are required to be vertical in order to ensure that the sidewalls of the holes to be etched in the substrate or the sidewalls of the epitaxial deposits, respectively, also turn out to be vertical.

Turner, Tasha↗