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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Anomalous Hall Crystals in Rhombohedral Multilayer Graphene. I. Interaction-Driven Chern Bands and Fractional Quantum Hall States at Zero Magnetic Field

Recent experiments on rhombohedral pentalayer graphene with a substrate-induced moiré potential have identified both Chern insulators and fractional quantum Hall states at zero magnetic field. Surprisingly, these states are observed in strong displacement fields where the effects of the moiré lattice are weak, and seem to be readily accessed without fine-tuning. To address these experimental puzzles, we study a model of interacting electrons in this geometry. Within self-consistent Hartree-Fock (SCHF) calculations, we find an isolated Chern band with small bandwidth and good quantum geometry. Exact diagonalization and density-matrix renormalization group calculations both confirm the band hosts fractional quantum Hall states without a magnetic field. Remarkably, the Chern band is stable at a wide range of angles, at four through six rhombohedral layers, at varying rhombohedral hopping parameters, and—most strikingly—survives in SCHF calculations when the moiré potential vanishes. In this limit, the state spontaneously breaks time-reversal and translation symmetry simultaneously, giving a topological crystalline state that we term the “anomalous Hall crystal.” We argue this is a general mechanism to create stable Chern bands in rhombohedral multilayer graphene, opening the door to studying the interplay between electronic topology, fractionalization, and spontaneous translation symmetry breaking.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Room temperature ferromagnetic and ferroelectric properties of Bi{sub 1−x}Ca{sub x}MnO{sub 3} thin films

Bi{sub 1−x}Ca{sub x}MnO{sub 3} (BCMO) thin films with x = 0, 0.1, 0.2, 0.3 and 0.4 are successfully deposited on the n-type Si (100) substrate at two different temperatures of 400 °C and 800 °C using RF magnetron sputtering. The stoichiometry of the films and oxidation state of the elements have been described by X-ray photoelectron spectroscopy analysis. Dielectric measurement depicts the insulating property of BCMO films. Magnetic and ferroelectric studies confirm the significant enhancement in spin orientation as well as electric polarization at room temperature due to incorporation of Ca{sup 2+} ions into BiMnO{sub 3} films. The BCMO (x = 0.2) film grown at 400 °C shows better magnetization (M{sub sat}) and polarization (P{sub s})with the measured values of 869 emu / cc and 6.6 μ{sub C}/ cm{sup 2} respectively than the values of the other prepared films. Thus the realization of room temperature ferromagnetic and ferroelectric ordering in Ca{sup 2+} ions substituted BMO films makes potentially interesting for spintronic device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Defect-engineered room-temperature ferromagnetism in quasi-two-dimensional nitrided CoTa 2 O 6

Thermal ammonolysis of quasi-two-dimensional (quasi-2D) CoTa 2 O 6 yields the O 2– /N 3– and anionic vacancy-ordered Co 2+ $Ta^{5+}_{2}$O 6–x N 2x/3 $\square$ x/3 (x $\leqslant$ 0.15), which exhibits a transition from antiferromagnetism to defect-engineered above-room-temperature ferromagnetism. First-principles calculations reveal that the origin of ferromagnetism is a particular CoO 5 N configuration with N located at Wyckoff position 8j, which breaks mirror symmetry about the ab plane. A pressure-induced electronic phase transition is also predicted at ~24.5 GPa, accompanied by insulator-to-metal transition and magnetic moment vanishing.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Nonsinusoidal angular dependence of FMR-driven spin current across an antiferromagnet in Y 3 F e 5 O 12 / NiO / Pt trilayers

Out-of-plane angular (θH) dependence of inverse spin Hall effect (ISHE) voltage (V ISHE ) generated by spin pumping has been investigated in Y 3 Fe 5 O 12 (YIG)/NiO/Pt trilayers. A simple sinusoidal angular dependence of V ISHE has been viewed as a signature of spin pumping. Surprisingly, we observe an extensive plateau in the V ISHE vs. θH plots with a pronounced peak feature at θH ~ 45 to 60 degrees when the measurement temperature is close to the Néel temperature (T N ) of NiO. This phenomenon can be understood as arising from the competition between the exchange coupling at the YIG/NiO interface, the easy-plane and in-plane easy-axis anisotropies of NiO, and the effect of the applied magnetic field. We conclude, while insulating antiferromagnetic films can efficiently transmit spin currents and show promise for integration in spintronic devices, the underlying physics of spin ordering and dynamics is richer than currently understood.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Interplay of Chiral and Helical States in a Quantum Spin Hall Insulator Lateral Junction

Here, we study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero in the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Detecting fractionalization in critical spin liquids using color centers

Quantum spin liquids are highly entangled ground states of insulating spin systems, in which magnetic ordering is prevented down to the lowest temperatures due to quantum fluctuations. One of the most extraordinary characteristics of quantum spin liquid phases is their ability to support fractionalized, low-energy quasiparticles known as spinons, which carry spin-1/2 but bear no charge. Relaxometry based on color centers in crystalline materials—of which nitrogen-vacancy (NV) centers in diamond are a well-explored example—provides an exciting new platform to probe the spin spectral functions of magnetic materials with both energy and momentum resolution and to search for signatures of these elusive, fractionalized excitations. In this work, we theoretically investigate the color-center relaxometry of two archetypal quantum spin liquids: the two-dimensional U(1) quantum spin liquid with a spinon Fermi surface and the spin-1/2 antiferromagnetic spin chain. The former is characterized by a metallic, spin-split ground state of mobile, interacting spinons, which closely resembles a spin-polarized Fermi liquid ground state but with neutral quasiparticles. We show that the observation of the Stoner continuum and the collective spin wave mode in the spin spectral function would provide a strong evidence for the existence of spinons and fractionalization. In one dimension, mobile spinons form a Luttinger liquid ground state. We show that the spin spectral function exhibits strong features representing the collective density and spin-wave modes, which are broadened in an algebraic fashion with an exponent characterized by the Luttinger parameter. The possibilities of measuring these collective modes and detecting the power-law decay of the spectral weight using NV relaxometry are discussed. We also examine how the transition rates are modified by marginally irrelevant operators in the Heisenberg limit. Published by the American Physical Society 2024

Takei, So (ORCID:0000000191771895)↗
DOE OSTI2017

P13631-E002PF: Pulsed field magnetostriction of Ba 2 CoTeO 6

Ba 2 CoTeO 6 is an insulating material consisting of two magnetic subsystems referred as A and B build of S=1/2 spins. Subsystem A is considered to be a Heisenberg-like antiferromagnet (AFM) on a triangular lattice and subsystem B is a J 1 -J 2 Ising-like AFM on a honey-comb lattice. The magnetic phase transitions are observed at T N1 = 12 K and T N2 =3K for A and B respectively. The application of magnetic fields unveils a rich phase diagram that varies depending on the direction of the applied field for either H ll c or H perp c. To date the phase diagram has been investigated by means of specific heat measurement up to 9T and susceptibility measurements with a SQUID magnetometer up to 7T. Magnetization measured in pulsed magnetic fields up to 60T at 1.3K and 4.2K reveal several steps and plateaux occurring at varying critical fields depending on the crystallographic direction. Common to the magnetization parallel c and perpendicular c is the saturation above 40T.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Emergent Phenomena in Oxide Nanostructures

The field of oxide electronics has seen tremendous growth over two decades and oxide materials find wide-ranging applications in information storage, fuel cells, batteries, and more. Phase transitions, such as magnetic and metal-to-insulator transitions, are one of the most important phenomena in oxide nanostructures. Many novel devices utilizing these phase transitions have been proposed, ranging from ultrafast switches for logic applications to low power memory structures. Yet, despite this promise and many years of research, a complete understanding of phase transitions in oxide nanostructures remains elusive. In this LDRD, we report two important observations of phase transitions. We conducted a systematic study of these transitions. Moreover, emergent quantum phenomena due to the strong correlations and interactions among the charge, orbital, and spin degrees of freedom inherent in transition metal oxides were explored. In addition, a new, fast atomic-scale chemical imaging technique developed through the characterization of these oxides is presented.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1982

Collaborative research in tunneling and field emission pumped surface wave local oscillators and amplifiers for infrared and submillimeter wavelengths under director's discretionary fund

Progress is reported in work towards the development of surface wave sources for the infrared and sub-millimeter portion of the spectrum to be based upon electron pumping by tunneling electrons in metal-barrier-metal or metal-barrier-semiconductor devices. Tunneling phenomena and the coupling of radiation to tunnel junctions were studied. The propagation characteristics of surface electro-magnetic modes in metal-insulator-p(++) semiconductor structures as a function of frequency were calculated. A model for the gain process based upon Tucker's formalism was developed and used to estimate what low frequency gain might be expected from such structures. The question of gain was addressed from a more fundamental viewpoint using the method of Lasher and Stern.

Gustafson, T. K.↗
DOE OSTI2018

Observation of cyclotron antiresonance in the topological insulator Bi 2 Te 3

Here, we report on the experimental observation of a cyclotron antiresonance in a canonical three-dimensional topological insulator Bi 2 Te 3 . Magnetoreflectance response of single-crystal Bi 2 Te 3 was studied in 18-T magnetic field, and compared to other topological insulators studied before, the main spectral feature is inverted. We refer to it as an antiresonance. In order to describe this unconventional behavior we propose the idea of an imaginary cyclotron resonance frequency, which on the other hand indicates that the form of the Lorentz force that magnetic field exerts on charge carriers takes an unconventional form.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Enhancement of interlayer exchange in an ultrathin two-dimensional magnet

Following the recent isolation of monolayer CrI 3 , many more two-dimensional van der Waals magnetic materials have been isolated. Their incorporation in van der Waals heterostructures offers a new platform for spintronics, proximity magnetism and quantum spin liquids. A primary question in this field is how exfoliating crystals to the few-layer limit influences their magnetism. Studies of CrI 3 have shown a different magnetic ground state for ultrathin exfoliated films compared with the bulk, but the origin is not yet understood. Here, we use electron tunnelling through few-layer crystals of the layered antiferromagnetic insulator CrCl 3 to probe its magnetic order and find a tenfold enhancement of the interlayer exchange compared with bulk crystals. Moreover, temperature- and polarization-dependent Raman spectroscopy reveals that the crystallographic phase transition of bulk crystals does not occur in exfoliated films. This results in a different low-temperature stacking order and, we hypothesize, increased interlayer exchange. In conclusion, our study provides insight into the connection between stacking order and interlayer interactions in two-dimensional magnets, which may be relevant for correlating stacking faults and mechanical deformations with the magnetic ground states of other more exotic layered magnets such as RuCl 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2016

Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers

We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator–ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Reversible hydrogen control of antiferromagnetic anisotropy in α-Fe 2 O 3

Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe 2 O 3 (haematite) - now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe 2 O 3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe 2 O 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2023

Direct experimental evidence of tunable charge transfer at the LaNiO 3 / CaMnO 3 ferromagnetic interface

Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this work, we utilize a combination of depth-resolved soft x-ray standing-wave and hard x-ray photoelectron spectroscopies in conjunction with polarization-dependent x-ray absorption spectroscopy to investigate the effects of the metal-insulator transition in LaNiO 3 on the electronic and magnetic states at the LaNiO 3 /CaMnO 3 interface. Here, we report a direct observation of the reduced effective valence state of the interfacial Mn cations in the metallic superlattice with an above-critical LaNiO 3 thickness (6 unit cells, u.c.) facilitated by the charge transfer of itinerant Ni 3d e g electrons into the interfacial CaMnO 3 layer. Conversely, in an insulating superlattice with a below-critical LaNiO 3 thickness of 2 u.c., a homogeneous effective valence state of Mn is observed throughout the CaMnO 3 layers due to the blockage of charge transfer across the interface. The ability to switch and tune interfacial charge transfer enables precise control of the emergent ferromagnetic state at the LaNiO 3 /CaMnO 3 interface and, thus, has far-reaching consequences on the future strategies for the design of next-generation spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Metal-insulator transition in (111) SrRuO 3 ultrathin films

(111)-oriented transition metal oxide thin films provide a route to developing oxide-based topological quantum materials, but the epitaxial growth is challenging. Here, we present the thickness-dependent electronic and magnetic phase diagrams of coherently strained, phase pure (111)-oriented SrRuO 3 epitaxial films grown on (111) SrTiO 3 substrates using pulsed laser deposition. With decreasing film thickness, it is found that both the metal-to-insulator and magnetic phase transitions occur at the same thickness of 4–5 nm for films grown along both the (111) and the (001) directions. The character of the transport near the metal-insulator transition is, however, distinct for the different directions, which is attributed to the increased electron-electron correlation for (111) SrRuO 3 . The results presented here illustrate both the broad challenges as well as the possibilities in modifying correlated materials using dimensional tuning of electronic and magnetic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System

Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensional heterostructure, wherein the Hall response is not only proportional to the out-of-plane magnetization component but also to the in-plane magnetization component. By interfacing a low-symmetry topological semimetal (TaIrTe4) with the ferromagnetic insulator (Cr2Ge2Te6), we create a low-dimensional magnetic system, where only one mirror symmetry is preserved. We show that as long as the magnetization has a finite component in the mirror plane, this last mirror symmetry is broken, allowing the emergence of an AHE signal proportional to in-plane magnetization. Our experiments, conducted on multiple devices, reveal a gate-voltage-dependent AHE response, suggesting that the underlying mechanisms responsible for the Hall effect in our system can be tuned via electrostatic gating. A minimal microscopic model constrained by the symmetry of the heterostructure shows that both interfacial spin-orbit coupling and time-reversal symmetry breaking via the exchange interaction from magnetization are responsible for the emergence of the in-plane AHE. Our work highlights the importance of system symmetries and exchange interaction in low-dimensional heterostructures for designing novel and tunable Hall effects in layered quantum systems.

FOS: Physical sciences↗
DOE OSTI2018

Electronic fingerprints of Cr and V dopants in the topological insulator Sb 2 Te 3

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb 2 Te 3 . Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Here our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.

36 MATERIALS SCIENCE↗