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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 973 records · Page 54
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Flexible concentrator photovoltaics based on microscale silicon solar cells embedded in luminescent waveguides

Unconventional methods to exploit monocrystalline silicon and other established materials in photovoltaic (PV) systems can create new engineering opportunities, device capabilities and cost structures. Here we show a type of composite luminescent concentrator PV system that embeds large scale, interconnected arrays of microscale silicon solar cells in thin matrix layers doped with luminophores. Photons that strike cells directly generate power in the usual manner; those incident on the matrix launch wavelength-downconverted photons that reflect and waveguide into the sides and bottom surfaces of the cells to increase further their power output, by more than 300% in examples reported here. Unlike conventional luminescent photovoltaics, this unusual design can be implemented in ultrathin, mechanically bendable formats. Furthermore, detailed studies of design considerations and fabrication aspects for such devices, using both experimental and computational approaches, provide quantitative descriptions of the underlying materials science and optics.

14 SOLAR ENERGY↗
DOE OSTI2018

High performance blue-emitting organic light-emitting diodes from thermally activated delayed fluorescence: A guest/host ratio study

Emitters displaying thermally activated delayed fluorescence (TADF) can drive highly efficient organic light-emitting diodes (OLEDs). Such emitters are usually incorporated into the emissive layer (EML) at a relatively low concentration (<20 wt. %) with respect to a host material, a guest-host method inherited from conventional fluorescent or phosphorescent OLEDs. In this work, detailed studies on OLEDs, in which the concentration of oBFCzTrz (a blue-emitter displaying TADF) in a DPEPO host was varied from 8 to 100 wt. %, reveals that oBFCzTrz displays ambipolar transport and limited fluorescence-quenching due to aggregation. For instance, a neat film of oBFCzTrz maintains a photoluminescence quantum yield of 82%. We determine that OLEDs with an EML having an oBFCzTrz concentration of 50 wt. % in DPEPO yield a maximum external quantum efficiency (EQE) of 25.5% with an EQE roll-off of 10% in the range from 10 to 1000 cd/m 2 and Commission Internationale de l'Eclairage color coordinates of (0.20, 0.44). OLEDs with smaller or larger oBFCzTrz concentrations display smaller maximum EQE values. OLEDs with a neat oBFCzTrz EML display a maximum EQE of 14.0%. Finally, time-resolved electroluminescent decay studies, and analysis using a simple model, reveal significant differences in transport, trapping, and recombination in these devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Single hole spin relaxation probed by fast single-shot latched charge sensing

Hole spins have recently emerged as attractive candidates for solid-state qubits for quantum computing. Their state can be manipulated electrically by taking advantage of the strong spin-orbit interaction (SOI). Crucially, these systems promise longer spin coherence lifetimes owing to their weak interactions with nuclear spins as compared to electron spin qubits. Here we measure the spin relaxation time T 1 of a single hole in a GaAs gated lateral double quantum dot device. We propose a protocol converting the spin state into long-lived charge configurations by the SOI-assisted spin-flip tunneling between dots. By interrogating the system with a charge detector we extract the magnetic-field dependence of T 1 ∝ B -5 for fields larger than B = 0.5 T, suggesting the phonon-assisted Dresselhaus SOI as the relaxation channel. This coupling limits the measured values of T 1 from ~400 ns at B = 1.5 T up to ~60 μs at B = 0.5 T.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

Magnetic properties of Ni substituted Y-type barium ferrite

Y-type barium hexaferrite is attractive material for various applications, such as high frequency antennas and RF devices, because of its interesting magnetic properties. Especially, Ni substituted Y- type hexaferrites have higher magnetic ordering temperature than other Y-type. We have investigated macroscopic and microscopic properties of Y-type barium hexaferrite. Ba{sub 2}Co{sub 2−x}Ni{sub x}Fe{sub 12}O{sub 22} (x = 0, 0.5, 1.0, 1.5, and 2.0) samples are prepared by solid-state reaction method and studied by X-ray diffraction (XRD), vibrating sample magnetometer, and Mössbauer spectroscopy, as well as a network analyzer for high frequency characteristics. The XRD pattern is analyzed by Rietveld refinement method and confirms the hexagonal structure with R-3m. The hysteresis curve shows ferrimagnetic behavior. Saturation magnetization (M{sub s}) decreases with Ni contents. Ni{sup 2+}, which preferentially occupies the octahedral site with up-spin sub-lattice, has smaller spin value S of 1 than Co{sup 2+} having S = 3/2. The zero-field-cooled (ZFC) measurement of Ba{sub 2}Co{sub 1.5}Ni{sub 0.5}Fe{sub 12}O{sub 22} shows that Curie and spin transition temperatures are found to be 718 K and 209 K, respectively. The Curie temperature T{sub C} is increased with Ni contents, while T{sub S} is decreased with Ni. The Mössbauer spectra were measured at various temperatures and fitted by using a least-squares method with six sextet of six Lorentzian lines for Fe sites, corresponding to the 3b{sub VI}, 6c{sub IV}*, 6c{sub VI}, 18h{sub VI}, 6c{sub IV}, and 3a{sub IV} sites at below T{sub C}. From Mössbauer measurements, we confirmed the spin state of Fe ion to be Fe{sup 3+} and obtained the isomer shift (δ), magnetic hyperfine field (H{sub hf}), and the occupancy ratio of Fe ions at six sub-lattices. The complex permeability and permittivity are measured between 100 MHz and 4 GHz, suggesting that Y-type barium hexaferrite is promising for antenna applications in UHF band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

In-situ high resolution transmission electron microscopy observation of silicon nanocrystal nucleation in a SiO{sub 2} bilayered matrix

Solid-state nucleation of Si nanocrystals in a SiO{sub 2} bilayered matrix was observed at temperatures as low as 450 °C. This was achieved by aberration corrected high-resolution transmission electron microscopy (HRTEM) with real-time in-situ heating up to 600 °C. This technique is a valuable characterization tool especially with the recent interest in Si nanostructures for light emitting devices, non-volatile memories, and third-generation photovoltaics which all typically require a heating step in their fabrication. The control of size, shape, and distribution of the Si nanocrystals are critical for these applications. This experimental study involves in-situ observation of the nucleation of Si nanocrystals in a SiO{sub 2} bilayered matrix fabricated through radio frequency co-sputtering. The results show that the shapes of Si nanocrystals in amorphous SiO{sub 2} bilayered matrices are irregular and not spherical, in contrast to many claims in the literature. Furthermore, the Si nanocrystals are well confined within their layers by the amorphous SiO{sub 2}. This study demonstrates the potential of in-situ HRTEM as a tool to observe the real time nucleation of Si nanocrystals in a SiO{sub 2} bilayered matrix. Furthermore, ideas for improvements on this in-situ heating HRTEM technique are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers

The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10 8 to 10 12 n/cm 2 . The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2015

Irreversible Wash Aid Additive for Cesium Mitigation: Phase II. Selection and/or Modification of COTS Field Portable Waste Water Systems

After an accidental or malicious release of radioactivity, large urban areas may be contaminated, compromising response efforts by first responders and law enforcement officials. In addition, some public services (e.g., drinking water and wastewater treatment, electrical power distribution, etc.) may be disrupted. In such an event, it may be important to deploy mitigation efforts in certain areas to restore response activities and public services (Fig. S-1). This report explores the state-of-the-art approach for a system to rapidly return critical infrastructure components to service following a cesium-137 (Cs-137) radiological dispersal device (RDD) release while avoiding the spread of Cs-137 beyond its original deposition area and minimizing the amount of Cs-137-contaminated wastewater. Specifically, we describe a wash system consisting of chemical additives added to fire hydrant water and irreversible solid sequestering agents added as the water is collected and treated for recycle in situ. The wash system is intended to be a rapidly deployable, cost-effective means of mitigating an urban setting for the purpose of restoring critical infrastructure and operational activities after a radiological release.

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2020

A measurement of absolute efficiency of the ARAPUCA photon detector in liquid argon

In the Fall of 2017, two photon detector designs for the Deep Underground Neutrino Experiment (DUNE) Far Detector were installed and tested in the TallBo liquid argon (LAr) cryostat at the Proton Assembly (PAB) facility, Fermilab. The designs include two light bars developed at Indiana University and a photon detector based on the ARAPUCA light trap engineered by Colorado State University and Fermilab. The performance of these devices is determined by analyzing 8 weeks of cosmic ray data. The current paper focuses solely on the ARAPUCA device as the performance of the light bars will be reported separately. The article briefly describes the ARAPUCA concept, the TallBo setup, and focuses on data analysis and results.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Incorporating Electrochemical Halide Oxidation into Drift-Diffusion Models to Explain Performance Losses in Perovskite Solar Cells under Prolonged Reverse Bias

Partial shading of a solar module can induce a set of cells within the module to operate under reverse bias. Studies have shown that metal halide perovskite solar cells with a wide variety of compositions and contacts exhibit interesting behavior in reverse bias that includes both reversible performance loss and non-reversible degradation. In this paper, an advanced drift-diffusion approach incorporating an electrochemical term to explain the short-circuit, open circuit and fill factor losses that are experimentally measured after prolonged reverse bias is used. It is shown that holes can tunnel into the perovskite due to sharp band bending near the contact, accumulate within the bulk of the perovskite absorber, and trigger the oxidation of halides to form neutral halogens. The density of neutral halogens is much higher in reverse bias because there are hardly any electrons available to reduce the iodine. The resulting halogens act as bulk recombination centers. While the interstitial halogen density does decay when the cell is operated in forward bias, permanent degradation can occur if the iodine diffuses out of the perovskite layer. Finally, the ways in which changing parameters such as the mobile ion density or the series resistance at the contact can influence device performance and stability are discussed.

degradation↗
DOE OSTI2012

Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

Swensen, James S.↗
DOE OSTI2019

Toward Stable Deep-Blue Luminescent Colloidal Lead Halide Perovskite Nanoplatelets: Systematic Photostability Investigation

Colloidal lead halide perovskite nanocrystals and nanoplatelets have emerged as promising semiconductor nanomaterials because of their spectral tunability, facile processability, and bright emission with high color purity. In particular, strong quantum and dielectric confinement make atomically thin colloidal lead bromide perovskite nanoplatelets a favorable candidate for next-generation deep-blue-emitting (λ max = 437 nm) materials. However, poor photostability poses a critical challenge; colloidal nanoplatelets suffer from photobleaching or transformation into thicker, less-confined nanostructures with red-shifted emission upon UV irradiation. In this study, we synthesize deep-blue-emitting organic–inorganic hybrid perovskite nanoplatelets (formula: L 2 [ABX 3 ]BX 4 , L: butylammonium and octylammonium, A: methylammonium or formamidinium, B: lead, and X: bromide or iodide) with large lateral dimension (~1 μm) by ligand-assisted reprecipitation and systematically investigate the factors that affect the photostability of those nanoplatelets. We find that freshness of the prepared precursor solutions for ligand-assisted reprecipitation is critical to obtain better stability with high photoluminescence quantum yield of perovskite nanoplatelets. Photobleaching is found to result from intrinsic instability of the perovskite lattice against UV irradiation in nanoplatelets, whereas transformation into thicker nanostructures results from extrinsic factors—moisture, primarily. Furthermore, we observe that substitution of the organic cation from formamidinium to methylammonium and addition of excess alkylammonium bromide ligands significantly enhance both the ambient and photostability. Lastly, we demonstrate that the dropcast film of methylammonium lead bromide nanoplatelets with excess alkylammonium bromide ligands shows dramatically improved stability both under UV irradiation and under ambient conditions. Lastly, this study expands our understanding of the factors that affect perovskite nanoplatelet photostability and opens up new possibilities for the fabrication of stable perovskite nanoplatelet-based optoelectronic devices.

2D↗
DOE OSTI2015

Effect of quantum parameter – H on space-charge wave spectra in n-type semiconductor plasmas

The present paper deals with the propagation characteristics of very fundamental wave i.e. space – charge wave while propagating through quantum semiconductor plasma. We have used quantum hydrodynamic model to derive the most general dispersion relation in terms of quantum parameter – H. We have found that in presence of an external electrostatic field, the wave spectra (dispersion as well as gain characteristics) not only modified due to presence of quantum effect but also two novel modes of propagation are introduced due to this effect. Hence it may be concluded that to miniaturize the opto-electronic devices, one should use highly doped semiconductor medium at comparatively lower temperature so that the quantum effects predominate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Black silicon solar thin-film microcells integrating top nanocone structures for broadband and omnidirectional light-trapping

Recently developed classes of monocrystalline silicon solar microcells (μ-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 μm) μ-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon μ-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. Here, the conversion efficiency increases from 8.1% to 11.5% with a small drop in open circuit voltage and fill factor.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

Quantum simulation of excited states from parallel contracted quantum eigensolvers

Abstract Computing excited-state properties of molecules and solids is considered one of the most important near-term applications of quantum computers. While many of the current excited-state quantum algorithms differ in circuit architecture, specific exploitation of quantum advantage, or result quality, one common feature is their rooting in the Schrödinger equation. However, through contracting (or projecting) the eigenvalue equation, more efficient strategies can be designed for near-term quantum devices. Here we demonstrate that when combined with the Rayleigh–Ritz variational principle for mixed quantum states, the ground-state contracted quantum eigensolver (CQE) can be generalized to compute any number of quantum eigenstates simultaneously. We introduce two excited-state (anti-Hermitian) CQEs that perform the excited-state calculation while inheriting many of the remarkable features of the original ground-state version of the algorithm, such as its scalability. To showcase our approach, we study several model and chemical Hamiltonians and investigate the performance of different implementations.

Physics↗
DOE OSTI2016

High efficiency and stable white OLED using a single emitter

The ultimate objective of this project was to demonstrate an efficient and stable white OLED using a single emitter on a planar glass substrate. The focus of the project is on the development of efficient and stable square planar phosphorescent emitters and evaluation of such class of materials in the device settings. Key challenges included improving the emission efficiency of molecular dopants and excimers, controlling emission color of emitters and their excimers, and improving optical and electrical stability of emissive dopants. At the end of this research program, the PI has made enough progress to demonstrate the potential of excimer-based white OLED as a cost-effective solution for WOLED panel in the solid state lighting applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Elucidating the Determinants of Alkali Ionic Conductivity in Oxide and Sulfide Frameworks

The aim of this project is to elucidate the structural and chemical factors determining alkali conductivity in oxide and sulfide frameworks using large scale first principles calculations and topological analysis. The facile conduction of alkali ions in oxide and sulfide host structures is of critical importance in energy storage. Today, the dominant form of energy storage in portable electronics is the rechargeable alkali-ion battery, a device that functions entirely on the basis of the reversible transport of alkali ions. The Li+/Na+ conductivity of a cathode has a direct influence on the rate capability of a Li/Na-ion battery, i.e., the speed at which it can be charged and discharged. Alkali conductivity is arguably of even greater importance in the solid electrolytes currently being investigated for high safety, high energy all-solid-state batteries. The research performed in this project has provided critical new insights into the diffusion mechanisms in state-of-the-art alkali superionic conductors such as Li 7 P 3 S 11 , Li 3 OCl 1-x Br x anti-perovskite, argyrodite Li 6 PS 5 Cl. Two potential novel lithium superionic conductors (Li 3 Y(PS 4 ) 2 and Li 5 PS 4 Cl 2 ) with improved electrochemical stabilities were predicted. We have also conducted in-depth studies into alkali conduction in several important classes of electrodes, including the layered P2 NaMO 2 oxides and the highly promising novel disordered rock salt Li 3+x V 2 O 5 anode for high-rate applications. This project has resulted in more than 10 peer-reviewed articles in highly regarded journals as well as a new open-source software framework (pymatgen-analysis-diffusion) that is widely used by the materials research community for the study of diffusion in materials.

25 ENERGY STORAGE↗
DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗
DOE OSTI2019

Methods of growing single crystals using solid-solid transformation of a glass

The present invention includes methods of promoting single crystal growth via solid-solid transformation of an appropriate glass, while avoiding the gaseous or liquid phase. In certain embodiments, in the all-solid-state glass-to-crystal transformation of the invention, extraneous nucleation is avoided relative to crystal growth via spatially localized laser heating and optional inclusion of a suitable glass former in the composition. The ability to fabricate patterned single-crystal architecture on a glass surface was demonstrated, providing a new class of micro-structured substrate for low cost epitaxial growth and active planar devices, for example.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗